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Kingston Technology Announces Data Center DC1000B NVMe SSD

Kingston Technology today announced the Data Center DC1000B M.2 NVMe SSD, optimized for server boot drive applications, featuring power-loss protection (PLP). Kingston's Data Centre DC1000B is a high-performance M.2 (2280) NVMe PCIe SSD using the latest Gen 3.0 x 4 PCIe interface with 64-layer 3D TLC NAND. DC1000B offers data centres a cost-effective boot drive solution with the reassurance that they are purchasing an SSD designed for server use. The DC1000B is ideally suited as an internal boot drive for use in high-volume rack-mount servers, as well as for use in purpose-built systems that require a high-performance M.2 SSD that includes on-board power loss protection (PLP).

M.2 NVMe SSDs are evolving within the data centre, providing efficiencies in booting servers to preserve valuable front-loading drive bays for data storage. Whitebox and Tier 1 Server OEMs are beginning to equip server motherboards with one, or sometimes two, M.2 sockets for boot purposes. While the M.2 form factor was originally designed as a client SSD form factor, its small physical size and high performance make it attractive for server use. Not all SSD are created equal and using a client SSD in a server application may result in poor, inconsistent performance.

Intel Shares New Roadmap for Optane, NAND, Including 144 Layer QLC and TLC

Intel today at a press event in South Korea announced their plans for future product launches in the memory spaces. Optane is the name of the carriage Intel is pulling here - there's no novelty about that - and the company will be pushing a second generation release of Optane enterprise SSDs and Optane DC Persistent Memory modules. Most interesting for us down-to-earth PC enthusiasts, though - the market launch of 144 Layer QLC NAND in 2020, which should bring even lower pricing to NAND-based devices. Later, the company also plans to launch 144 layer TLC NAND solutions.

The new Optane modules apparently make use of first-generation 3D XPoint memory still - the love child of the now defunct Intel-Micron partnership. Intel's new Optane DC Persistent Memory products will materialize in codename Barlow Pass modules, with a release window around the likes of Cooper Lake (14nm) and Ice Lake (10nm) server processors scheduled for 2020. It seems that Intel's only consumer solution based in Optane - the Optane Memory H10 two-in-one SSD - is a lonely child effort which won't be joined by the previously-planned Optane Memory M15 (a dedicated cache drive for systems with mechanical-based storage, which are already on their way out) and Optane SSD 815P (which would only offer 118 GB of storage, clearly too little for current data storing trends in the overall market.

Yangtze Memory Begins Mass-production of 64-layer 3D NAND Flash Memory

Yangtze Memory Technologies (YMTC), a Chinese state-backed semiconductor company founded in 2016 as part of the Chinese Government's tech-independence push, has commenced mass-production of 64-layer 3D NAND flash memory chips, at a rate of 100,000 to 150,000 wafers per month leading into 2020. The 64-layer 3D NAND chips are based on YMTC's "in-house" Xtracking architecture. The company is already developing a 128-layer 3D NAND flash chip, and is skipping 96-layer along the way.

YMTC's capacity will be augmented by a new fab being built by its parent company, Tsinghua Unigroup. Tsinghua is a state-owned company which holds a controlling 51 percent stake in YMTC, and is a beneficiary of China's National Semiconductor Industry Investment Fund. When it goes online in 2021-22, the new Tsinghua fab, located in Chengdu, will augment YMTC's capacity by an additional 100,000 12-inch wafers per month. Its existing fab in Nanjing will also receive a capacity expansion.

NAND Manufacturers Accelerate Deployment of 120/128 Layer 3D NAND Fabrication

A report from DigiTimes pits NAND manufacturers as accelerating their 120/128 layer 3D NAND technologies, aiming for volume production as early as 2020. Even as SK Hynix has begun sampling its 96-layer 4D NAND flash in March, Toshiba and Western Digital already had plans to introduce 128-layer technology, built on a TLC (Triple Level Cell) process technology so as to increase density while avoiding yield issues present with current QLC (Quad Level Cell) implementations.

The decision to accelerate deployment of the next generation of NAND comes from the fact that the market still faces an oversupply of NAND flash, mostly driven by the mature process of 64-layer NAND technology. With new technologies, higher ASPs and lower production scales are sustainable, which should enable supply to reduce enough so as to increase pricing of NAND-based technologies - and allow manufacturers to somewhat reset asking prices for new NAND chips.

Galaxy Unveils HOF M.2 PCIe SSD with Heat-pipe Based Heatsink

High-end M.2 NVMe SSDs are beginning to come with integrated heatsinks as overheating controllers impact sustained performance. The latest such drive is a new edition of the Hall of Fame (HOF) M.2 PCIe series from Galaxy, which come with a chunky aluminium heatsink, only this one isn't just another hunk of metal. This heatsink uses a flattened copper heat pipe to pull heat from the drive's hot components and spread it evenly along both sides of the aluminium block. The heat pipe makes direct contact with the drive's Phison PS5012-E12 8-channel controller and Toshiba-made 64-layer 3D TLC NAND flash chips.

The heatsink wraps around sideways of the drive and so it may not be a perfect fit for NVMe RAID cards with multiple M.2 slots side-by-side, although for most applications, such as the M.2 slot on the motherboard, the design could click. The drive comes in capacities of 512 GB, 1 TB, and 2 TB. All three models offer sequential read speeds of up to 3400 MB/s. The 1 TB and 2 TB models write at up to 2800 MB/s, while the 512 GB writes at up to 2000 MB/s. 4K random access performance of the 2 TB and 1 TB models are rated at up to 400,000 IOPS reads with up to 600,000 IOPS writes; and up to 400,000 IOPS reads with up to 540,000 IOPS writes for the 512 GB model. The drive is initially being launched in China, and could make its way to western markets under the Galax and KFA2 brands later this year.

Micron Unveils 2200 Client-segment SSD, Ditches SMI for In-house Controller

Micron has curiously been releasing client-segment SSDs these recent weeks. The company's main brand was focused on enterprise products, while subsidiary brands Crucial and Ballistix catered to the client-segment. Following up on its late-February launch of the 1300-series client-segment SSDs, Micron unveiled the even faster 2200-series. These drives ditch Silicon Motion-sourced controllers in favor of a new controller Micron designed in-house. Built in the M.2-2280 form-factor with PCI-Express 3.0 x4 interface, taking advantage of the NVMe protocol. This in-house controller is mated with Micron's 64-layer 3D TLC NAND flash, cushioned by its own LPDDR4 DRAM cache.

Available in capacities of 256 GB, 512 GB, and 1 TB, the Micron 2200 is rated to offer sequential transfer rates of up to 3000 MB/s reads, with up to 1600 MB/s writes, up to 240,000 IOPS 4K random reads, and up to 210,000 IOPS 4K random writes, with an endurance rating of 75 TB, 150 TB, and 300 TB, for the 256 GB, 512 GB, and 1 TB variants, respectively. Micron-exclusive features also make their way, such as native power-loss data-protection, and TCG Opal SED. The company hasn't revealed pricing or availability for these drives.

Toshiba Memory Expands NVMe SSD Portfolio Targeting Cloud Data Centers

Toshiba Memory America, Inc. the U.S.-based subsidiary of Toshiba Memory Corporation, announced availability of its XD5 Series NVMe SSD platform in a 2.5-inch, 7 mm low-profile form factor that is optimized for low-latency and performance consistency in read-intensive workloads. Developed for both data center and cloud environments, the new 2.5-inch form factor XD5 Series is ideal for NoSQL databases, large-scale-out data mining and analysis, and streaming applications. The XD5 Series is also well-suited for Open Compute Project (OCP) applications and systems.

Built on 64-layer BiCS FLASH TLC (3-bit-per-cell) 3D flash memory, and featuring a PCIe Gen 3 x4 interface, the new XD5 SSD 2.5-inch option delivers sequential read performance up to 2,700 megabytes per second (MB/s) and sequential write performance up to 895 MB/s with low active power consumption of 7 watts. At one drive write per day (DWPD), the XD5 Series can write nearly 4 terabytes (TB) of random data daily for five years at a consistent performance rate. Random read/write performance is specified at 250,000/21,000 Input/Output Operations per Second (IOPS) respectively, making the XD5 Series a predictable and reliable solution for read-intensive or heavy transactional workloads.

WD Announces CL SN720 and DC SN630 NVMe SSDs for Data Centers

Western Digital Corp. today announced two new additions to its broad portfolio of NVMe-based systems, platforms, SSDs, and memory drives for data center and cloud customers. With a full portfolio covering applications from edge-to-core, these additions are the Western Digital Ultrastar DC SN630 NVMe SSD and the Western Digital CL SN720 NVMe SSD. Each leverages the power of Western Digital's vertical integration capabilities, including internally developed controller and firmware architectures, and 64-layer 3D NAND technology. As a replacement for lower-performing SATA SSDs, these new NVMe drives meet the insatiable need for performance, scalability, endurance and low total cost of ownership (TCO) for public and private cloud deployments, hyperscale cloud environments, and next-generation workloads at the edge.

IT managers face challenges such as managing multiple workload types, scaling at optimal TCO, and controlling server sprawl. Due to its inherent scalability and performance benefits, NVMe is quickly becoming the de facto standard for everything from traditional scale-up database applications to emerging edge computing architectures.

Toshiba Announces VMware vSAN Certification for PM5 Series Enterprise SAS SSDs

Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, today announced that its newly released PM5 Series of 12Gb/s (gigabits per second) enterprise SAS SSDs has earned VMware vSAN 6.7 certification. This certification enables TMA's flash-based PM5 storage devices to be shared across connected hosts in a VMware vSphere cluster. With the vSAN 6.7 certification, users can pool PM5 Series SSDs together in a single, distributed shared data store. This allows users to define the storage capabilities required (such as performance, capacity and availability) for each connected virtual machine (VM) within the VMware vSAN cluster. These capabilities not only further hyper-converged infrastructure (HCI) options in virtual environments, but also ensure that storage policies are administered and maintained within the PM5 Series with the utmost vSAN compatibility.

The certification of the PM5 Series enables VMware vSAN support for both hybrid and all-flash configurations using a two-tier storage architecture (capacity tier and cache tier). All write operations are sent to the cache tier and are subsequently de-staged to the capacity tier over time. When a PM5 Series SSD is deployed within a hybrid configuration, its cache tier is used as both a read and write cache, keeping hot data to improve performance. In an all-flash configuration, 100 percent of the cache tier is used for the write buffer. Given the benefits of tiered storage, PM5 Series SSDs are capable of meeting the demanding requirements of both enterprise and data center customers.

LiteOn Unveils the MU3 Line of Mainstream SATA SSDs

LiteOn unveiled its latest MU3 line of mainstream SSDs. Built in the 7 mm-thick 2.5-inch form-factor with SATA 6 Gbps interface, the drive implements Toshiba's 64-layer BiCS 3D TLC NAND flash memory, and comes in capacities of 120 GB, 240 GB, and 480 GB. It offers sequential transfer rates of up to 560 MB/s reads, with up to 500 MB/s writes; and random-access throughput of up to 83,000 IOPS reads, with up to 89,000 IOPS writes. You get most features common to the segment, including NCQ, TRIM, SMART, and a 3-year warranty. LiteOn didn't reveal pricing.

Micron 5210 ION SSD Now Generally Available

Micron Technology, Inc., today announced the next step towards market leadership for its quad-level cell (QLC) NAND technology with immediate broad market availability of the popular Micron 5210 ION enterprise SATA SSD, the world's first QLC SSD, which began shipping to select customers and partners in May of this year. Available through global distributors, the Micron 5210 ION enterprise SATA SSD further accelerates Micron's lead in the QLC market, enabling replacement of hard disk drives (HDDs) with SSDs and building on Micron's recent launch of the Crucial P1 NVMe QLC SSD for consumer markets.

Enterprise storage needs are increasing as data center applications deliver real-time user insights and intelligent and enhanced user experiences, leveraging artificial intelligence (AI), machine learning, big data and real-time analytics. At the same time, there is a growing consumer need for higher storage capacity to support digital experiences. QLC SSDs are uniquely designed to address these requirements.

Intel Intros 660p Series M.2 NVMe SSDs with QLC NAND Flash

Intel Tuesday introduced the new SSD 660p series M.2 NVMe solid state drives. At the heart of these drives is the new 64-layer 3D QLC (quadruple level cell, or 4 bits per cell) NAND flash memory by IMFlash Technology (an Intel and Micron joint-venture). This memory is mated with a SIlicon Motion SMI 2263 controller. This chip is a derivative of the popular SMI2262EN, built on a newer process, with support for QLC NAND flash, compacted to have a smaller PCB footprint, and is driven by a custom firmware by Intel. The drives use over 10% of the QLC NAND flash area as SLC cache. The 660p series comes in three variants based on size - 512 GB, 1 TB, and 2 TB. The prices are the biggest dividend of QLC: the 512 GB variant goes for USD $99.99, the 1 TB variant at $199.99, and the 2 TB variant for $399.99.

Built in the M.2-2280 form-factor, the SSD 660p series drives feature PCI-Express 3.0 x4 interface. Intel's pricing puts these drives close to competing drives with PCIe x2 interface, but offering higher transfer rates thanks to the wider bus. It's also interesting to note here that the controller is cushioned by a DRAM cache (something PCIe x2 drives tend to lack, to keep costs down). Performance numbers differ by variant, and the 512 GB drive is the slowest, sequentially reading at speeds of up to 1500 MB/s, with up to 1000 MB/s sequential writes; up to 90,000 4K random reads, and up to 220,000 IOPS 4K random writes. The 1 TB and 2 TB variants both sequentially read and write at up to 1800 MB/s. The 1 TB variant offers 150,000 IOPS 4K random reads, and up to 220,000 IOPS random writes; while the 2 TB variant has 4K random reads/writes numbers of 220,000 IOPS.

QLC NAND Flash Based Intel SSD 660p Could Lower Prices of PCIe x4 NVMe SSDs

Intel debuted its 3D QLC NAND flash memory on new SSD DC series 2.5-inch U.2 PCIe drives. Its technology partner Micron, too gave its 3D QLC an enterprise debut with the 5120 ION. The first client-segment debut from the IMFlash combine could be the Intel SSD 660p series of M.2 NVMe SSDs. Slotted between the 700p and the 600p, the new 660p implements homebrew 64-layer QLC NAND flash memory, and a new controller. It comes in sizes of 512 GB, 1 TB, and 2 TB.

The best part about the 660p is its performance numbers. The drive takes advantage of PCI-Express 3.0 x4, and offers (at least on paper), performance numbers identical to those of the pricier 700p. The drives read at speeds of up to 1800 MB/s, with up to 1100 MB/s writes. The 600p, in comparison, capped out at 560 MB/s sequential writes, while the 700p is only slightly higher, at 1200 MB/s. Random access speeds are up to 150,000 IOPS (both reads and writes). QLC pays off rich dividends to consumers by way of price/GB. The 660p 512 GB is expected to be priced at 113.90€ (0.22€/GB), the 1 TB variant at 197.75€ (0.20€/GB), and the 2 TB variant at 391.43€ (0.20€/GB). Not bad for launch prices, considering these are PCIe NVMe drives priced competitively with SATA SSDs.

Samsung Receives the Environmental Product Declaration Certificate for 512Gb V-NAND and 860 EVO 4TB SSD

Samsung Electronics, the world leader in advanced memory technology, today announced that it is being recognized for its environmental reliability by receiving the industry's first Environmental Product Declaration (EPD) certificate in Korea with its 512Gb 64-layer 3bit V-NAND and 860 EVO 4TB SSD.

The Environmental Product Declaration is a national certification system in Korea which recognizes a product's performance according to seven key environmental metrics including carbon footprint, resource footprint, ozone depletion, acidification, eutrophication, photochemical smog, and water footprint.

Micron Ready With 96-Layer Flash & 1Y nm DRAM in 2H 2018

In their recent earnings call, Micron commented that they have 96-layer 3D NAND technology on track for volume shipments in the second half of 2018. Most of today's SSDs typically use 32-layer technology, with 64-layer flash chips used in some recent releases like the Crucial MX500. 96-layer is the third generation of 3D NAND and increases storage capacity per chip even further which allows smaller and more energy efficient mobile devices to be built. Of course it will be cheaper too, compared to current-generation 64 layer NAND, which should bring SSD pricing down even more, and of course generally help pricing of consumer products which use flash memory.

The second important note from the presentation is that Micron expects 1X nm (18 nm) DRAM production to exceed that of previous generations before the end of this year. Their next-generation 1Y nm (15/16 nm) DRAM is on track to begin production shipments in the second half of 2018, too. As they noted in a previous event, their product and process roadmap for DRAM 1z looks solid and 1-alpha development programs already under way.

Memblaze Launches New PBlaze5 Series NVMe SSDs

Beijing Memblaze Technology Co., Ltd. newly released high-performance PBlaze5 910/916 and low-power 510/516 series NVMe SSD. They adopt the 64-layer enterprise-level 3D-NAND and support NVMe standard protocol with a user capacity up to 15.36TB.

The PBlaze5 910/916 series NVMe SSD features 6GB/s sequential read bandwidth, 1 million IOPS read performance and 89/11microsecond read/write latency. With the high performance shared by PBlaze series products, PBlaze5 910/916 series boasts advanced features like High-speed TRIM and Multiple-namespace, with higher QoS and more flexible.

Micron Ships Industry's First Quad-Level Cell NAND SSD

Micron Technology, Inc. has commenced shipments of the industry's first SSD built on revolutionary quad-level cell (QLC) NAND technology. Unveiled at Micron's 2018 Analyst and Investor Event, the Micron 5210 ION SSD provides 33 percent more bit density than triple-level cell (TLC) NAND, addressing segments previously serviced with hard disk drives (HDDs). The introduction of new QLC-based SSDs positions Micron as a leader in providing higher capacity at lower costs to address the read-intensive yet performance-sensitive cloud storage needs of AI, big data, business intelligence, content delivery and database systems.

As workloads evolve to meet the ever-increasing demands for real-time data insights and analytics, data centers increasingly need the capacity, speed, reliability and steady state performance that enterprise flash storage provides. Micron QLC NAND - reaching densities of 1 terabit with its next-generation 64-layer 3D NAND structure - is optimized to meet these demands and make SATA SSD performance and capacity more approachable than ever before.

Micron Announces New Edge Storage MicroSDXC Cards

Micron today announced general availability of the 128GB and 256GB density of edge storage microSD card solutions and collaboration with several leading video surveillance solution providers to promote surveillance-grade edge storage. Built on Micron's industry-leading 64-layer 3D TLC NAND technology, the newly released solutions enable greater capacity in a smaller space, delivering up to 30 days of surveillance video storage in the camera itself.

Over 98 percent of all microSD cards sold globally in 2017 were used in consumer applications, according to IHS Markit. These consumer-grade memory cards are not designed and validated for commercial use in video surveillance applications. Micron's industrial microSD cards are designed specifically for professional video surveillance use cases and include a three-year warranty for 24x7 continuous video recording usage. The Micron microSD card design and firmware is optimized to ensure a reliable, robust and low-maintenance system design that delivers 24x7 continuous recording capability with minimum video frame drops.

Toshiba Adds New Lineup of Data Center SSDs Featuring 64-layer BiCS Flash

Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, has enhanced its portfolio of solid-state drives (SSDs) for the data center with a new, 3D flash memory-based lineup of PCI Express NVMe and SATA SSDs in multiple form factors. The new CD5, XD5 and HK6-DC SSDs enable infrastructure managers to address performance and workload demands by offering robust performance and reliability with lower operating power for read-intensive applications such as NoSQL databases, big data analytics and streaming media.

"Demand for flash storage in data centers continues to grow rapidly - with capacity shipped into the enterprise expected to increase at a 58 percent CAGR through 2021," said Jeff Janukowicz, IDC Research Vice President for Solid State Drives and Enabling Technologies. "In order for hyperscale, virtualization, automation/orchestration and software-defined storage applications to thrive, cloud data centers must meet specific workload requirements. Toshiba's latest data center SSDs are designed to help customers address these demanding environments and realize the most value from their flash storage."

China's Tsinghua Unigroup to Manufacture 3D NAND Flash for Intel

In a bid to ensure sufficient supply of NAND flash memory to meet the growing demands of not just PC, but also smartphone markets, China's Tsinghua Unigroup and Intel are in talks to license-manufacture 64-layer 3D NAND flash, based on existing IMFlash Technologies designs. IMFlash is a joint-venture between Intel and Micron Technology. Tsinghua Unigroup is one of the biggest beneficiaries of the Chinese Government's ambitious plan to invest RMB 1 trillion (USD $158 billion) over the next five years, to increase China's semiconductor self-sufficiency to 70 percent, by 2025.

The move will significantly increase supply of NAND flash memory, and is seen as a market threat to Korean NAND flash giants Samsung and SK Hynix, and Japanese Toshiba. IMFlash Technology released its first 64-layer 3D NAND flash to the market in 2017, and is currently developing a 96-layer 3D NAND flash chip, which, along with newer 10 nm-class silicon fabrication process, could double densities over the current 64-layer chips.

Samsung Begins Mass-production of 30.72-terabyte PM1643 SSD

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's largest capacity Serial Attached SCSI (SAS) solid state drive (SSD) - the PM1643 - for use in next-generation enterprise storage systems. Leveraging Samsung's latest V-NAND technology with 64-layer, 3-bit 512-gigabit (Gb) chips, the 30.72 terabyte (TB) drive delivers twice the capacity and performance of the previous 15.36 TB high-capacity lineup introduced in March 2016.

This breakthrough was made possible by combining 32 of the new 1TB NAND flash packages, each comprised of 16 stacked layers of 512 Gb V-NAND chips. These super-dense 1 TB packages allow for approximately 5,700 5-gigabyte (GB), full HD movie files to be stored within a mere 2.5-inch storage device.

Intel Reimagines Data Center Storage with New 3D NAND SSDs

Today, Intel announced the Intel SSD DC P4510 Series for data center applications. The P4510 Series uses 64-layer TLC Intel 3D NAND to enable end users to do more per server, support broader workloads and deliver space-efficient capacity. The P4510 Series enables up to four times more terabytes per server and delivers up to 10 times better random read latency at 99.99 percent quality of service than previous generations. The drive can also deliver up to double the input-output operations per second (IOPS) per terabyte. The 1 and 2TB capacities have been shipping to cloud service providers (CSPs) in high volume since August 2017, and the 4 and 8TB capacities are now available to CSPs and channel customers. All capacities are in the 2.5-inch 15 mm U.2 form factor and utilize a PCIe NVMe 3.0 x4 connection.

To accelerate performance and simplify management of the P4510 Series PCIe SSDs and other PCIe SSDs, Intel is also delivering two new technologies that work together to replace legacy storage hardware. Intel Xeon Scalable processors include Intel Volume Management Device (VMD), enabling robust management such as surprise insertion/removal and LED management of PCIe SSDs directly connected to the CPU. Building on this functionality, Intel Virtual RAID on CPU (VROC) uses Intel VMD to provide RAID to PCIe SSDs. By replacing RAID cards with Intel VROC, customers are able to enjoy up to twice the IOPs performance and up to a 70 percent cost savings with PCIe SSDs directly attached to the CPU, improving customer's return on their investments in SSD-based storage.

Plextor Intros M8V Series Value SATA SSDs

Plextor today introduced its latest line of value SATA SSDs, under the M8V series. Available in 2.5-inch and M.2-2280 form-factors, the drives leverage SATA 6 Gbps interface, combining Toshiba's latest-generation 64-layer BiCS TLC NAND flash memory, with Silicon Motion SM2258 controller. This controller offers LPDC and redundant array of NAND flash. Both variants come in capacities of 128 GB, 256 GB, and 512 GB.

Performance differs by capacity variants. All three capacity-variants read at speeds of up to 560 MB/s. The 128 GB, 256 GB, and 512 GB variants write (sequentially) at speeds of up to 400 MB/s, up to 510 MB/s, and up to 520 MB/s, respectively. Their 4K random-access speeds are rated at 60,000/70,000 IOPS (reads/writes), 81,000/80,000 IOPS, and 82,000/81,000 IOPS, respectively. Plextor rates their endurance at 70 TBW for the 128 GB variant, 140 TBW for the 256 GB variant, and 280 TBW for the 512 GB variant. Plextor is backing these drives with 3-year warranties.

Micron Launches 5200 Series Enterprise SATA SSDs Utilizing 64-Layer 3D TLC NAND

Micron Technology, Inc. today launched the Micron 5200 series of SATA solid state drives (SSDs), maintaining industry-leading performance, consistency, capacity, reliability, and overall infrastructure value. Built on Micron's new industry-leading 64-layer 3D NAND technology, the Micron 5200 series of SSDs offers a cost-optimized SATA platform for business-critical virtualized workloads that cripple on a hard drive, such as OLTP, BI/DSS, VDI, block/object and media streaming.

Leveraging the proven architecture, performance and capacity of the well-regarded 5100 SATA SSDs, the Micron 5200 series is engineered to deliver a fast, easy and cost-effective enterprise storage solution to replace existing hard drives and legacy SSDs. Micron 5200 SSDs immediately deliver better total cost of ownership and improve data center efficiency through server and storage platform consolidation, reducing IT costs and simplifying infrastructure and maintenance. Now it is easier than ever before for enterprises to add more flash into the data center and get more out of server deployments.

Samsung Officially Launches SSD 860 PRO and 860 EVO Series

Samsung Electronics America, Inc. today introduced the 860 PRO and 860 EVO solid state drives (SSDs), the most up-to-date additions to the company's SATA interface lineup. The products are aimed at consumers who require fast, reliable performance across various applications, from everyday computing to heavy workloads and graphic-intensive operations. Building on the successful launch of the 850 PRO and 850 EVO - the industry's first consumer SSDs with V-NAND technology - the 860 PRO and 860 EVO achieve industry-leading performance for SATA SSDs, offering enhancements in speed, reliability, compatibility and capacity.

"The new 860 PRO and 860 EVO SSDs combine the latest 512Gb and 256Gb 64-layer V-NAND, up to 4GB LPDDR4 mobile DRAM and a new MJX controller to elevate the user experience for both consumers and businesses," said Un-Soo Kim, senior vice president of Brand Product Marketing, Memory Business at Samsung Electronics. "Samsung will continue to fuel meaningful innovations in the consumer SSD space and drive growth of the overall memory industry for years to come."
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