News Posts matching "64-layer"

Return to Keyword Browsing

Intel Intros 660p Series M.2 NVMe SSDs with QLC NAND Flash

Intel Tuesday introduced the new SSD 660p series M.2 NVMe solid state drives. At the heart of these drives is the new 64-layer 3D QLC (quadruple level cell, or 4 bits per cell) NAND flash memory by IMFlash Technology (an Intel and Micron joint-venture). This memory is mated with a SIlicon Motion SMI 2263 controller. This chip is a derivative of the popular SMI2262EN, built on a newer process, with support for QLC NAND flash, compacted to have a smaller PCB footprint, and is driven by a custom firmware by Intel. The drives use over 10% of the QLC NAND flash area as SLC cache. The 660p series comes in three variants based on size - 512 GB, 1 TB, and 2 TB. The prices are the biggest dividend of QLC: the 512 GB variant goes for USD $99.99, the 1 TB variant at $199.99, and the 2 TB variant for $399.99.

Built in the M.2-2280 form-factor, the SSD 660p series drives feature PCI-Express 3.0 x4 interface. Intel's pricing puts these drives close to competing drives with PCIe x2 interface, but offering higher transfer rates thanks to the wider bus. It's also interesting to note here that the controller is cushioned by a DRAM cache (something PCIe x2 drives tend to lack, to keep costs down). Performance numbers differ by variant, and the 512 GB drive is the slowest, sequentially reading at speeds of up to 1500 MB/s, with up to 1000 MB/s sequential writes; up to 90,000 4K random reads, and up to 220,000 IOPS 4K random writes. The 1 TB and 2 TB variants both sequentially read and write at up to 1800 MB/s. The 1 TB variant offers 150,000 IOPS 4K random reads, and up to 220,000 IOPS random writes; while the 2 TB variant has 4K random reads/writes numbers of 220,000 IOPS.

QLC NAND Flash Based Intel SSD 660p Could Lower Prices of PCIe x4 NVMe SSDs

Intel debuted its 3D QLC NAND flash memory on new SSD DC series 2.5-inch U.2 PCIe drives. Its technology partner Micron, too gave its 3D QLC an enterprise debut with the 5120 ION. The first client-segment debut from the IMFlash combine could be the Intel SSD 660p series of M.2 NVMe SSDs. Slotted between the 700p and the 600p, the new 660p implements homebrew 64-layer QLC NAND flash memory, and a new controller. It comes in sizes of 512 GB, 1 TB, and 2 TB.

The best part about the 660p is its performance numbers. The drive takes advantage of PCI-Express 3.0 x4, and offers (at least on paper), performance numbers identical to those of the pricier 700p. The drives read at speeds of up to 1800 MB/s, with up to 1100 MB/s writes. The 600p, in comparison, capped out at 560 MB/s sequential writes, while the 700p is only slightly higher, at 1200 MB/s. Random access speeds are up to 150,000 IOPS (both reads and writes). QLC pays off rich dividends to consumers by way of price/GB. The 660p 512 GB is expected to be priced at 113.90€ (0.22€/GB), the 1 TB variant at 197.75€ (0.20€/GB), and the 2 TB variant at 391.43€ (0.20€/GB). Not bad for launch prices, considering these are PCIe NVMe drives priced competitively with SATA SSDs.

Samsung Receives the Environmental Product Declaration Certificate for 512Gb V-NAND and 860 EVO 4TB SSD

Samsung Electronics, the world leader in advanced memory technology, today announced that it is being recognized for its environmental reliability by receiving the industry's first Environmental Product Declaration (EPD) certificate in Korea with its 512Gb 64-layer 3bit V-NAND and 860 EVO 4TB SSD.

The Environmental Product Declaration is a national certification system in Korea which recognizes a product's performance according to seven key environmental metrics including carbon footprint, resource footprint, ozone depletion, acidification, eutrophication, photochemical smog, and water footprint.

Micron Ready With 96-Layer Flash & 1Y nm DRAM in 2H 2018

In their recent earnings call, Micron commented that they have 96-layer 3D NAND technology on track for volume shipments in the second half of 2018. Most of today's SSDs typically use 32-layer technology, with 64-layer flash chips used in some recent releases like the Crucial MX500. 96-layer is the third generation of 3D NAND and increases storage capacity per chip even further which allows smaller and more energy efficient mobile devices to be built. Of course it will be cheaper too, compared to current-generation 64 layer NAND, which should bring SSD pricing down even more, and of course generally help pricing of consumer products which use flash memory.

The second important note from the presentation is that Micron expects 1X nm (18 nm) DRAM production to exceed that of previous generations before the end of this year. Their next-generation 1Y nm (15/16 nm) DRAM is on track to begin production shipments in the second half of 2018, too. As they noted in a previous event, their product and process roadmap for DRAM 1z looks solid and 1-alpha development programs already under way.

Memblaze Launches New PBlaze5 Series NVMe SSDs

Beijing Memblaze Technology Co., Ltd. newly released high-performance PBlaze5 910/916 and low-power 510/516 series NVMe SSD. They adopt the 64-layer enterprise-level 3D-NAND and support NVMe standard protocol with a user capacity up to 15.36TB.

The PBlaze5 910/916 series NVMe SSD features 6GB/s sequential read bandwidth, 1 million IOPS read performance and 89/11microsecond read/write latency. With the high performance shared by PBlaze series products, PBlaze5 910/916 series boasts advanced features like High-speed TRIM and Multiple-namespace, with higher QoS and more flexible.

Micron Ships Industry's First Quad-Level Cell NAND SSD

Micron Technology, Inc. has commenced shipments of the industry's first SSD built on revolutionary quad-level cell (QLC) NAND technology. Unveiled at Micron's 2018 Analyst and Investor Event, the Micron 5210 ION SSD provides 33 percent more bit density than triple-level cell (TLC) NAND, addressing segments previously serviced with hard disk drives (HDDs). The introduction of new QLC-based SSDs positions Micron as a leader in providing higher capacity at lower costs to address the read-intensive yet performance-sensitive cloud storage needs of AI, big data, business intelligence, content delivery and database systems.

As workloads evolve to meet the ever-increasing demands for real-time data insights and analytics, data centers increasingly need the capacity, speed, reliability and steady state performance that enterprise flash storage provides. Micron QLC NAND - reaching densities of 1 terabit with its next-generation 64-layer 3D NAND structure - is optimized to meet these demands and make SATA SSD performance and capacity more approachable than ever before.

Micron Announces New Edge Storage MicroSDXC Cards

Micron today announced general availability of the 128GB and 256GB density of edge storage microSD card solutions and collaboration with several leading video surveillance solution providers to promote surveillance-grade edge storage. Built on Micron's industry-leading 64-layer 3D TLC NAND technology, the newly released solutions enable greater capacity in a smaller space, delivering up to 30 days of surveillance video storage in the camera itself.

Over 98 percent of all microSD cards sold globally in 2017 were used in consumer applications, according to IHS Markit. These consumer-grade memory cards are not designed and validated for commercial use in video surveillance applications. Micron's industrial microSD cards are designed specifically for professional video surveillance use cases and include a three-year warranty for 24x7 continuous video recording usage. The Micron microSD card design and firmware is optimized to ensure a reliable, robust and low-maintenance system design that delivers 24x7 continuous recording capability with minimum video frame drops.

Toshiba Adds New Lineup of Data Center SSDs Featuring 64-layer BiCS Flash

Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, has enhanced its portfolio of solid-state drives (SSDs) for the data center with a new, 3D flash memory-based lineup of PCI Express NVMe and SATA SSDs in multiple form factors. The new CD5, XD5 and HK6-DC SSDs enable infrastructure managers to address performance and workload demands by offering robust performance and reliability with lower operating power for read-intensive applications such as NoSQL databases, big data analytics and streaming media.

"Demand for flash storage in data centers continues to grow rapidly - with capacity shipped into the enterprise expected to increase at a 58 percent CAGR through 2021," said Jeff Janukowicz, IDC Research Vice President for Solid State Drives and Enabling Technologies. "In order for hyperscale, virtualization, automation/orchestration and software-defined storage applications to thrive, cloud data centers must meet specific workload requirements. Toshiba's latest data center SSDs are designed to help customers address these demanding environments and realize the most value from their flash storage."

China's Tsinghua Unigroup to Manufacture 3D NAND Flash for Intel

In a bid to ensure sufficient supply of NAND flash memory to meet the growing demands of not just PC, but also smartphone markets, China's Tsinghua Unigroup and Intel are in talks to license-manufacture 64-layer 3D NAND flash, based on existing IMFlash Technologies designs. IMFlash is a joint-venture between Intel and Micron Technology. Tsinghua Unigroup is one of the biggest beneficiaries of the Chinese Government's ambitious plan to invest RMB 1 trillion (USD $158 billion) over the next five years, to increase China's semiconductor self-sufficiency to 70 percent, by 2025.

The move will significantly increase supply of NAND flash memory, and is seen as a market threat to Korean NAND flash giants Samsung and SK Hynix, and Japanese Toshiba. IMFlash Technology released its first 64-layer 3D NAND flash to the market in 2017, and is currently developing a 96-layer 3D NAND flash chip, which, along with newer 10 nm-class silicon fabrication process, could double densities over the current 64-layer chips.

Samsung Begins Mass-production of 30.72-terabyte PM1643 SSD

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's largest capacity Serial Attached SCSI (SAS) solid state drive (SSD) - the PM1643 - for use in next-generation enterprise storage systems. Leveraging Samsung's latest V-NAND technology with 64-layer, 3-bit 512-gigabit (Gb) chips, the 30.72 terabyte (TB) drive delivers twice the capacity and performance of the previous 15.36 TB high-capacity lineup introduced in March 2016.

This breakthrough was made possible by combining 32 of the new 1TB NAND flash packages, each comprised of 16 stacked layers of 512 Gb V-NAND chips. These super-dense 1 TB packages allow for approximately 5,700 5-gigabyte (GB), full HD movie files to be stored within a mere 2.5-inch storage device.

Intel Reimagines Data Center Storage with New 3D NAND SSDs

Today, Intel announced the Intel SSD DC P4510 Series for data center applications. The P4510 Series uses 64-layer TLC Intel 3D NAND to enable end users to do more per server, support broader workloads and deliver space-efficient capacity. The P4510 Series enables up to four times more terabytes per server and delivers up to 10 times better random read latency at 99.99 percent quality of service than previous generations. The drive can also deliver up to double the input-output operations per second (IOPS) per terabyte. The 1 and 2TB capacities have been shipping to cloud service providers (CSPs) in high volume since August 2017, and the 4 and 8TB capacities are now available to CSPs and channel customers. All capacities are in the 2.5-inch 15 mm U.2 form factor and utilize a PCIe NVMe 3.0 x4 connection.

To accelerate performance and simplify management of the P4510 Series PCIe SSDs and other PCIe SSDs, Intel is also delivering two new technologies that work together to replace legacy storage hardware. Intel Xeon Scalable processors include Intel Volume Management Device (VMD), enabling robust management such as surprise insertion/removal and LED management of PCIe SSDs directly connected to the CPU. Building on this functionality, Intel Virtual RAID on CPU (VROC) uses Intel VMD to provide RAID to PCIe SSDs. By replacing RAID cards with Intel VROC, customers are able to enjoy up to twice the IOPs performance and up to a 70 percent cost savings with PCIe SSDs directly attached to the CPU, improving customer's return on their investments in SSD-based storage.

Plextor Intros M8V Series Value SATA SSDs

Plextor today introduced its latest line of value SATA SSDs, under the M8V series. Available in 2.5-inch and M.2-2280 form-factors, the drives leverage SATA 6 Gbps interface, combining Toshiba's latest-generation 64-layer BiCS TLC NAND flash memory, with Silicon Motion SM2258 controller. This controller offers LPDC and redundant array of NAND flash. Both variants come in capacities of 128 GB, 256 GB, and 512 GB.

Performance differs by capacity variants. All three capacity-variants read at speeds of up to 560 MB/s. The 128 GB, 256 GB, and 512 GB variants write (sequentially) at speeds of up to 400 MB/s, up to 510 MB/s, and up to 520 MB/s, respectively. Their 4K random-access speeds are rated at 60,000/70,000 IOPS (reads/writes), 81,000/80,000 IOPS, and 82,000/81,000 IOPS, respectively. Plextor rates their endurance at 70 TBW for the 128 GB variant, 140 TBW for the 256 GB variant, and 280 TBW for the 512 GB variant. Plextor is backing these drives with 3-year warranties.

Micron Launches 5200 Series Enterprise SATA SSDs Utilizing 64-Layer 3D TLC NAND

Micron Technology, Inc. today launched the Micron 5200 series of SATA solid state drives (SSDs), maintaining industry-leading performance, consistency, capacity, reliability, and overall infrastructure value. Built on Micron's new industry-leading 64-layer 3D NAND technology, the Micron 5200 series of SSDs offers a cost-optimized SATA platform for business-critical virtualized workloads that cripple on a hard drive, such as OLTP, BI/DSS, VDI, block/object and media streaming.

Leveraging the proven architecture, performance and capacity of the well-regarded 5100 SATA SSDs, the Micron 5200 series is engineered to deliver a fast, easy and cost-effective enterprise storage solution to replace existing hard drives and legacy SSDs. Micron 5200 SSDs immediately deliver better total cost of ownership and improve data center efficiency through server and storage platform consolidation, reducing IT costs and simplifying infrastructure and maintenance. Now it is easier than ever before for enterprises to add more flash into the data center and get more out of server deployments.

Samsung Officially Launches SSD 860 PRO and 860 EVO Series

Samsung Electronics America, Inc. today introduced the 860 PRO and 860 EVO solid state drives (SSDs), the most up-to-date additions to the company's SATA interface lineup. The products are aimed at consumers who require fast, reliable performance across various applications, from everyday computing to heavy workloads and graphic-intensive operations. Building on the successful launch of the 850 PRO and 850 EVO - the industry's first consumer SSDs with V-NAND technology - the 860 PRO and 860 EVO achieve industry-leading performance for SATA SSDs, offering enhancements in speed, reliability, compatibility and capacity.

"The new 860 PRO and 860 EVO SSDs combine the latest 512Gb and 256Gb 64-layer V-NAND, up to 4GB LPDDR4 mobile DRAM and a new MJX controller to elevate the user experience for both consumers and businesses," said Un-Soo Kim, senior vice president of Brand Product Marketing, Memory Business at Samsung Electronics. "Samsung will continue to fuel meaningful innovations in the consumer SSD space and drive growth of the overall memory industry for years to come."

Crucial Starts Selling MX500 2.5-inch SSD Models

Crucial started selling all four models of its premium SATA SSD, the MX500. The drive was launched earlier this month. It comes in 250 GB, 500 GB, 1 TB, and 2 TB variants; and in the 2.5-inch form-factor, with SATA 6 Gbps interface. M.2-2280 variants with SATA interface, which were shown off at the 2018 International CES, could launch a little later this year. The 250 GB variant is priced (MSRP) at USD $79.99 ($0.31 per GB), the 500 GB variant at $139.99 ($0.27 per GB), the 1 TB variant $259.99 ($0.25 per GB), and the range-topping 2 TB variant $499.99 ($0.24 per GB). All four models come with 5-year warranties.

Crucial MX500 combines Micron's 2nd generation 64-layer 3D TLC NAND flash memory with a Silicon Motion SM2258 controller, and a custom firmware by Crucial. The NAND flash chips by design offer the same levels of power-loss protection as drives that need capacitor banks to do so. Among its features are Dynamic Write Acceleration (SLC-cached writes), and Redundant Array of Independent NAND (RAIN). All four variants offer sequential transfer rates of up to 560 MB/s with up to 510 MB/s writes, and 4K random access performance ratings of up to 95,000/91,000 IOPS (reads/writes).

Intel SSD 760p and 660p Specifications and Pricing Listed Online

Autobuy, a popular online shopping site in Taiwan, recently listed Intel's upcoming 760p and 660p M.2 NVMe SSDs on their store. The SSD 760p will be manufactured under Intel's 64-layer 3D NAND technology and feature TLC (triple-level-cell) NAND. It's obviously the faster of the two with a sequential read speed up to 3,200 MB/s and a write speed up to 1,600 MB/s. The drive offers random access reads up to 350,000 IOPS and writes up to 280,000 IOPS. Intel will offer this model in capacities of 128 GB, 256 GB, 512 GB, 1 TB, and 2 TB. TigerDirect listed the pricing for them at $96, $120, $240, $448, and $893, respectively.

The SSD 660p is Intel's budget-friendly this time around. Therefore, it will use QLC (quad-level-cell) NAND despite being manufactured with the same technology as its older brother. This SSD can reach up to 1,800 MB/s in sequential read and up to 1,200 MB/s in sequential write speeds with random access read and write performance in the range of 150,000 IOPS. Surprisingly, Intel won't be offering this model in the 128 GB and 256 GB capacities. Instead, the lowest capacity model will start from 512 GB and make its way up to 2 TB. Unfortunately, pricing wasn't available at the time of this article.

Toshiba's Not-so-flashy CES Booth was Full of Flash

Toshiba throughout 2017 made big moves in the flash storage industry, particularly its bitter falling out with WD/SanDisk. The company today is more innovative than ever. Its 2018 International CES booth had a mix of products by the original Toshiba digital storage products division, and its client-focused, US-based, former OCZ division. The star-attraction isn't some big PCIe add-on card SSD that can push a dozen terabytes per second; but the modest RC100 M.2 NVMe drive. Drives like it could make NVMe storage affordable for upper-mainstream gaming PC builders throughout 2018.

The RC100 has been exhaustively detailed in one of our older articles. It's an M.2-2242 drive with PCIe gen 3.0 x2 interface, and more than triple the transfer rates of the fastest SATA SSD you can find. This drive will be gulped down by both the DIY and OEM markets. Next up, is the TR200 entry-level SATA SSD launched last October, targeted at those still clinging onto HDDs or first-time builders. It features Toshiba's 64-layer TLC NAND flash to achieve some of the lowest price-per-gigabyte ratios.

Crucial Launches the MX500 Solid State Drive

Crucial, a leading global brand of memory and storage upgrades, today announced the availability of the Crucial MX500 SSD. The new drive features second generation Micron 3D NAND technology and is 45 times more energy efficient than a typical hard drive. Available in capacities up to 2TB in the 2.5-inch form factor and up to 1TB in the M.2 form factor, the MX500 has sequential reads/writes up to 560/510 MB/s and random reads/writes up to 95K/90K IOPS.

"This next generation MX500 SSD features a stackable 64-layer, 256-gigabit component. Micron's floating gate NAND is designed with CMOS Under the Array (CUA), which allows us to minimize the footprint of the die. At 59 square millimeters, it's among the world's smallest 256-gigabit die," said Jon Tanguy, Crucial Senior SSD Product Engineer. "Our engineering team has incorporated this leading-edge NAND technology in an SSD that includes all the advanced features Crucial customers have come to expect to keep their data safe."

Toshiba RC100 "Entry-level" M.2 NVMe SSD Detailed Some More

Following its early-CES launch, we have more details of Toshiba's "entry-level" M.2 NVMe SSD, the RC100. This drive is designed to offer significantly higher performance than SATA SSDs, at a tiny (10-15 percent) price premium over the fastest SATA SSDs. This market has been made inroads to by companies like ADATA, with their XPG SX6000-series. The RC100, offers not only NVMe performance, but also a more compact size. The drive is built in the M.2-2242 form-factor (42 mm long). It will fit on any motherboard that supports M.2-2280 drives, you just have to move the fastening nut to an inner hole marked "42."

Toshiba RC100 drives combine an in-house developed controller with Toshiba 64-layer BiCS Flash TLC memory. The drive features PCI-Express 3.0 x2 host interface, and takes advantage of the NVMe 1.2 protocol. It offers sequential transfer rates of up to 1,620 MB/s reads, with up to 1,130 MB/s writes; and 4K random access performance of up to 160,000 IOPS reads, and 120,000 IOPS writes. The drive comes in capacities of 120 GB, 240 GB, and 480 GB, and is backed by a 3-year warranty.

Toshiba Unveils RC100 Series M.2 NVMe SSDs

Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, will be highlighting the use of its industry-leading BiCS FLASH 3D memory in several applications - including its new lineup of NVMe SSDs, the RC100 Series.

At CES, TMA is collaborating with its customers and technology partners to take on the future - together. Toshiba was the first company in the world[1] to announce 3D flash memory technology, which effectively addresses the processing, storage and management of the growing volume of data generated worldwide. Recent announcements see the company continuing to lead the industry forward, including the introduction of a 96-layer 512Gb die; the debut of the industry's first[2] flash memory device with quadruple-level cell (QLC) technology; and the addition of Through Silicon Via (TSV) technology. Already enabling the enterprise, data center, PC and mobile applications of today, TMA's BiCS FLASH has paved the way for the applications of tomorrow. In everything from artificial intelligence and virtual reality to a growing number of automotive applications (such as infotainment), high performance computing and the ever-expanding "internet of things," storage density needs will climb higher and higher - and BiCS FLASH was designed with this in mind.

Plextor Debuts Their Latest M9Pe Gaming PCIe SSDs

PLEXTOR, a leading manufacturer of award-winning solid-state drives (SSDs) and other high-performance digital storage devices for consumers, today announced the launch of its newest NVMe PCIe SSD the M9Pe Series. The new M9Pe SSD Series has adopted advanced 64-layer 3D NAND and flagship controller along with exclusive PlexNitro, smart cache technology, delivering unprecedented sequential read/write up to 3,200/2,100 MB/s and random read/write up to 400,000/300,000 IOPS. The M9Pe puts improved performance and durability in its crosshairs.

Aimed at high-level PC gaming such as eSports, the M9Pe boasts of its superior components to deliver less lags and 20% faster boot up times compared to a typical SATA drive. The new M9Pe (HHHL/AIC version only) also sports a new eye-catching design with its programmable 3-mode RGB LED lights for the perfect visual appeal on any desktop gaming setup. Similar to its predecessors, the new M9Pe features a high-performing thermal heatsink (M9PeY and M9PeG only) to help regulate SSD temperatures during prolonged gaming sessions resulting to stabilized performance.

Samsung Starts Producing First 512-Gigabyte Universal Flash Storage

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production of the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung's latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets.

"The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards," said Jaesoo Han, executive vice president of Memory Sales & Marketing at Samsung Electronics. "By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world."

Toshiba Memory Corporation Unveils 2TB XG5-P NVMe SSD

Toshiba Memory Corporation, the world leader in memory solutions, has enhanced its line-up of client SSDs with the launch of premium models in its XG5-P series. The new NVM Express (NVMe) client SSDs improve on the performance of the current XG5 series models and double the maximum capacity to 2 TB. Sample shipments to OEM customers start today in limited quantities, and Toshiba Memory Corporation will gradually increase shipments from the first calendar quarter of 2018.

The XG5-P series also utilizes a PCI Express (PCIe) Gen3 x4 lane and NVM Express Revision 1.2.1 interface, and delivers performance of up to 3000 MB/s sequential read and 2200 MB/s sequential write, and up to 320,000 IOPS random read and 265,000 IOPS random write. Its random read/write performance in full access range is approximately 55% better than that of standard XG5 series products. At the same time, low power consumption is maintained at less than 60 mW during operation.

Toshiba Memory Unveils UFS Devices Utilizing 64-Layer 3D Flash

Toshiba Memory Corporation, the world leader in memory solutions, has today started sampling Universal Flash Storage (UFS) devices utilizing Toshiba Memory Corporation's cutting-edge 64-layer, BiCS FLASH 3D flash memory. The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.

The new line-up will be available in four capacities: 32 GB, 64 GB, 128 GB and 256 GB. All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5 x 13 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management, allowing users to simplify system development.

Samsung's Next-Gen PM981 NVMe SSDs Surface

Samsung is the most well-regarded company when it comes to consumer SSDs. even if their SSD solutions do usually carry a premium versus the competition, that price delta is usually well justified: Samsung's SSDs are frequently the most reliable, fastest option in the market. Samsung's 960 PRO and 960 EVO SSDs have done a good job of clarifying the company's market positioning, and now, the successors for those Samsung SSDs have already surfaced.

The next-gen Samsung NVMe drives carry the PM981 code-name - where "PM" stands for TLC NAND (in this case, based on 64-layer 3-bit per cell V-NAND chips), "9" stands for Samsung's highest performing solutions, and "81" stands for the part number - two tiers ahead of Samsung's 960 series. It's expected that there will be a 970 part, since Samsung seems to be steering away from the "EVO" and "PRO" monikers to differentiate products according to performance - a straight numeral is expected to be the norm going forward. For now, the parts that have surfaced carry 512 GB and 1 TB of memory. These will make use of Samsung's Polaris V2 controller (with a metal heatsink over it to aid in cooling), and deliver 3,000 MB/s and 3,200 MB/s sequential read speeds (for the 512 GB and 1 TB versions respectively) and 1,800 MB/s and 2,400 MB/s sequential write, respectively. The models surfaced from a Vietnamese retailer, which has them going for $233 and $439 - which doesn't mean this will be the final consumer retail price, but seems reasonable for the technology and performance tier of these NVMe SSD solutions.
Return to Keyword Browsing