GIGABYTE TECHNOLOGY Co. Ltd, a leading manufacturer of motherboards and graphics cards, announced today the launch of AORUS RGB MEMORY 4400 MHz. The all new design memory kit features the highly-praised Hynix D die, providing high bandwidth and high performance of DDR4 XMP 4400 MHz under 8 GB x2 mainstream specifications with a friendly price tag. The AORUS RGB MEMORY 4400 MHz is qualified by the high-end platform of INTEL Z490 and AMD X570, offering distinguished quality and stability with a lifetime warranty. Through RGB 2.0 support, users can create personal stylish lighting among DRAM and system components with balance of performance, budget, and fashion.

Following the innovation of computer platforms, the support of high memory XMP increases as well. GIGABYTE AORUS RGB MEMORY has won most credits consistently from the industry, and brings extra to the plate with the latest AORUS RGB MEMORY 4400 MHz 16 GB, with the specification of 8 GB x2 DDR4 XMP 4400 MHz and 19-26-26-46 timing. AORUS RGB MEMORY 4400 MHz 16 GB adopts Hynix D die which is the latest optimized option that memory overclockers highly recommend, and chose this level of product when purchasing. GIGABYTE implements this high quality material on AORUS RGB MEMORY 4400 MHz memory for overclockers who chase high memory frequency and enthusiasts can take full advantage of the various performance boosts.

Antec, a leading provider of high-performance computer components and accessories for the gaming, PC upgrade and Do-It-Yourself market, broadens its range of memory with the new Katana DDR4 Memory. Inspired by the Japanese Samurai sword and its blade, the Antec Katana features a soft silhouette with metallic shine and lighting, adding extra style to the dream builds. "With our Katana memory modules, Antec aims at enthusiasts buying their stylish gaming cases and looking to add stylish designed components by the same brand", explains Eric Chen, Vice President at Antec. "Katana shows off a metallic shine on the silver lighting bar, while, lit up, Katana glows with soft and harmonious light effects."

The distinctive aluminium heatsink offers excellent thermal conductivity to ensure great cooling performance even during overclocking. Katana provides extensive freedom of customization with a vast array of modes and ARGB functions via motherboard synchronization.

HP unveiled its V8 RGB line of DDR4 memory modules targeted at the DIY market. The full-height UDIMM module is characterized by dark aluminium heatspreaders and an RGB LED silicone diffuser crown. The module comes in 8 GB single-rank, and 16 GB dual-rank densities, and speeds of DDR4-3000, DDR4-3200, DDR4-3466, and DDR4-3600. The lighting supports ARGB control through popular apps such as ASUS Aura, GIGABYTE RGB Fusion, MSI Mystic Light, and ASRock Polychrome. HP intends to sell the V8 RGB in single-module kits. The company didn't reveal pricing.

Thermaltake, the leading PC DIY premium brand for Cooling, Gaming Gear, and Enthusiast Memory solutions, is now announcing more excellent news for those who want to try out the NeonMaker software on other Thermaltake products. Besides Riing Quad, Riing Trio, and Floe DX series products, Thermaltake aims to expand the fun of NeonMaker to other product lines; hence, NeonMaker software now supports the TOUGHRAM RGB Series!

If users want to pair up their TOUGHRAM RGB Series lighting with cooling products, now is the time to do so. Users are able to personalize their lighting effects freely by utilizing the NeonMaker software, and users can also find out more information on the TOUGHRAM RGB Series products through AR technology by using our exclusive ARTT app. Other than that, users can also synchronize TOUGHRAM RGB Series products with the TT RGB Plus software to maximize the control of RGB effects.

Samsung announced today in an OCP Virtual Summit keynote that it has developed a solid state drive (PM9A3 SSD) with a SNIA-based E1.S form factor and full PCIe Gen 4 support to harness the production efficiencies of the company's sixth-generation (1xx-layer), three-bit V-NAND. At the same time, the company said that it has introduced a comprehensive reference design for its E1.S-based storage system.

The keynote, in addition to announcing the PM9A3, highlighted a new approach to open source multi-industry storage collaboration that spotlighted the development of an open-source platform (OSP) fundamentally tied to cloud-scale infrastructure deployments. It was presented by Jongyoul Lee, senior vice president of Samsung's Memory Software Development Team at the Open Compute Project Virtual Global Summit.

ZADAK, a leading provider of enthusiast PC gaming components and innovative water cooling solutions, announces the TWIST, a new DDR4 memory series featuring a low profile design with clock speeds ranging from 2666 MHz to 4133 MHz at a latency of 19-21-21-42 1.4 V, and capacity from 8 GB to 256 GB. Engineered for performance and compatibility, the TWIST DDR4 memories support Intel XMP 2.0 profiles for effortless overclocking, and offer superior heat dissipation with their aluminium alloy heat sink. With a low-profile design and extensive Qualified Vendor List (QVL) certification, they are sure to fit any build. The TWIST Series DDR4 memory modules achieve the maximum capacity of 32 GB for single slot with impressive stability.

Sporting a slim anodized aluminium alloy heat sink, the TWIST Series comes in a matte black and brushed aluminium finish for an elegant and sleek look. The refined low profile and compact design of the TWIST is well thought out to provide optimal heat dissipation without compromising on style.

The world's leading memory brand, TEAMGROUP today announces two new products, the T-FORCE SPARK RGB USB Flash Drive and the ELITE SDXC Memory Card. The T-FORCE SPARK RGB USB Flash Drive has a soft RGB lighting effect and a smart capacity display design to supports multiplatform operation. The ELITE SDXC Memory Card uses UHS-I U3 V30 specification, which is suitable for 4K Ultra HD video recording and shooting with DSLR cameras. It also has waterproof, shockproof, anti-X ray and anti-static functions. The two new products will bring fresh new look to storage devices and jumpstart new digital smart lifestyle for consumers.

TEAMGROUP launches the T-FORCE SPARK RGB USB Flash Drive with a capless design and a sliding connector to avoid the problem of losing the cap. The RGB lighting effect is designed with gaming elements and smart capacity status indicator. When connecting to Windows, the blue, yellow and red light will flash to display the capacity ratio during reading and writing. It shows current storage status easily, and this practical function can make a big leap forward in storage efficiency. The SPARK RGB USB Flash Drive is even more suitable for gaming consoles such as PS4, PS3, Xbox One and Xbox 360, satisfying gamers' storage needs at once with colorful RGB lighting.

Thermaltake, the leading PC DIY premium brand for Cooling, Gaming Gear, and Enthusiast Memory solutions, is now bringing some fantastic news for those who have been dying to try out the NeonMaker software without a set of Riing Quad Fans. The NeonMaker software now supports Riing Trio and the Floe DX series coolers. Now is the best chance for users to try out the NeonMaker with different Thermaltake products. Not only will you be able to personalize your lighting effects freely by utilizing the NeonMaker software, but you can also synchronize with the TT RGB Plus software to maximize the control of your RGB effects.

NeonMaker not only provides various default effects, but also lets users customize lighting colors, adjust effects' via the timeline, and lighting directions using the software editor. It also allows users to personalize their lighting effects on each LED, granting access to further customizable lighting options. There's no need to wait, enjoy all RGB related features on the NeonMaker software by using Riing Trio Fans and Floe DX series products.

Micron Technology, Inc., together with Motorola, today announced integration of Micron's low-power DDR5 (LPDDR5) DRAM into Motorola's new motorola edge+ smartphone, bringing the full potential of the 5G experience to consumers. Micron and Motorola worked in close collaboration to enable the edge+ to reach 5G network speeds that require maximum processing power coupled with high bandwidth memory and storage.

With 12 gigabytes (GB) of industry-leading Micron LPDDR5 DRAM memory, motorola edge+ delivers a smooth, lag-free consumer experience. The new phone takes advantage of the faster data speeds and lower latency of 5G to increase the performance of cloud-based applications such as gaming and streaming entertainment.

Thermaltake today announced its TOUGHRAM Z-ONE series premium PC memory without RGB LED embellishments. The TOUGHRAM Z-ONE series, which debuted in December 2019, originally feature an RGB LED diffuser on top. The new modules instead feature a brushed aluminium crown of a contrasting shade to the heatspreaders, which gives it an Art Deco look when viewed from the top. The company launched two SKUs today, "R010D408GX2-3600C18A" is a 16 GB dual-channel (2x 8 GB) kit rated for DDR4-3600, while "R010D408GX2-3200C16A" is its DDR4-3200 rated sibling. The 3600 MHz variant achieves its marketed speeds with a tested CAS latency of 18T, and 1.35 V vDIMM. The DDR4-3200 variant does so at 16T CAS latency, and 1.35 V. Both variants pack Intel XMP profiles to enable advertised speeds, and are tested to work on Intel X299, Z390, and AMD X570 platforms. The company didn't reveal pricing.

Today, HP Inc. unveiled its newest Z by HP mobile workstation and HP ENVY portfolio - designed for creators who push the envelope of what's possible. The HP ZBook Studio, HP ZBook Create, and the HP ENVY 15 are the latest additions to the HP Create Ecosystem, which launched at Adobe MAX in 2019.

The powerful line-up enables all levels of creators, including consumers, prosumers and professionals, to capture, create, and bring to life digital concepts and ideas that can be shared, enjoyed, and experienced. In the past, creators had to choose between heavy workstations or bulky gaming devices to get the power they require for work and play. Today, HP is pushing the boundaries of engineering and creative productivity by allowing photographers, vloggers, graphic designers, architects, film makers, and everyone in between, to achieve what was never thought possible.

KIOXIA Europe (formerly Toshiba Memory) is pleased to announce the launch of KIOXIA branded consumer products including the company's microSDs, SDs, USB Memory and SSDs. KIOXIA and its group companies started to operate under its new company name on October 1st, 2019. After the brand name change of its business-to-business products, KIOXIA has launched the completely new look and feel of its consumer products in April 2020.

With its comprehensive portfolio of microSD, SD, USB memory and SSD, KIOXIA offers consumer products that are specifically designed for enabling end-users to store their digital way of life wherever and whenever they want. KIOXIA's consumer products are mainly focused and ideally suited for use with smartphones, tablets and PCs, in gaming, digital cameras and more.

ADATA, a leading manufacturer of high-performance DRAM modules, NAND Flash products, gaming products, and mobile accessories,today announces the launch of the XPG SPECTRIX D50 DDR4 RGB memory module. Reaching performance of up to 4800 MHz, sporting a maximum capacity of 32 GB, and featuring an elegant geometric design, the XPG SPECTRIX D50 offers immense performance and minimalist styling gamers, overclockers, and PC enthusiasts will appreciate.

Made with only the highest quality chips and PCBs, the XPG D50 provides ultimate stability, reliability, and speeds of up to 4800 MHz. What's more, it supports the latest Intel and AMD platforms. To ensure all that amazing performance inside is protected from impact, the XPG D50 sports a robust heatsink with a wall thickness of nearly 2 mm for excellent durability. The D50 support Intel XMP 2.0 for hassle-free and stable overclocking without the need to go into BIOS.

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories is pleased to announce the launch of its industrial-grade 32 GB DDR4-3200 memory modules. With tested transfer rates of up to 3200 MT/s and 32 GB of capacity, the modules are ideal for segments and applications experiencing continuous growth of temporarily stored data as a result of 5G network and AIoT deployment, and thus require higher capacity and performance. These segments and applications include telecommunications, surveillance systems, autonomous vehicles, medical equipment, and industrial robots among others.

The modules come in U-DIMM, SO-DIMM, R-DIMM, ECC-DIMM, and ECC SO-DIMM variants and are compatible with the latest 3rd Gen AMD Ryzen and 10th Gen Intel Core processors. Made with the latest advancements in soldering and manufacturing. Utilizing a 288-pin design, operating voltage has been reduced from 1.5 V on DDR3 to 1.2 V, which not only helps save power by 20%, but also boosts transfer bandwidth speed.

SK Hynix has today posted an update on their blog about the upcoming DDR5 memory, which they have developed in co-respondence with JEDEC's progression of the standard. They have noted a few key things, among which some of the most interesting are features like the maximum speed of 8400 Mbps. The DDR5 standard is very flexible, allowing manufacturers to release their chips with frequencies ranging anywhere from 3200-8400 Mbps. While the lowest speed is 3200 Mbps, manufacturers are starting with 4800 Mbps chips and building their way up from there. The minimum density of a single DDR5 die is 8 Gb, while the maximum is 64 Gb, quadrupling the maximum capacity of DDR4 dies.

Perhaps one of the biggest changes besides capacity and speed improvements is the addition of Error-Correcting Code (ECC) support for memory. This feature is now not exclusive to special dies, like with DDR4, but rather is built inside every die. The DDR5 memory chips use 32 banks, split into 8 bank groups, which is designed to provide as much bandwidth as possible. Burst Length is doubled to 16, compared to 8 of DDR4, so memory access availability is better. Operating Voltage is decreased to 1.1 V, from the previous 1.2 V of DDR4, resulting in an overall decrease of 20% of power consumption. The mass production of SK-Hynix's DDR5 chips will start this year, however, exact timing is unknown.

NVIDIA has enabled its AIB partners to design a to ship a GeForce GTX 1650 GPU with a twist - a GDDR6 DRAM instead of the regular GDDR5 DRAM. And GIGABYTE is the first to update its GPU offerings. Today, GIGABYTE has launched... exactly all the models it had it already offered? Both of the models, like the GIGABYTE GTX 1650 OC and GTX 1650 Windforce OC, are carrying the same name again, just with a newer memory. The only difference is the box it ships in, which you can see below, that shows a GDDR6 marking and the GPU has a bit different cooler shroud. The amount of memory is still static, remaining at 4 GB, while the speed is now bumped to 12 Gbps. Base clocks of the GTX 1650 OC models are unknown, while the boost is 1635 MHz. For GTX 1650 Windforce OC model, base clock is still unknown, while the boost is 1710 MHz.

Micron Technologies, in the latest earnings report, announced that they will start shipping High-Bandwidth Memory 2 (HBM2) DRAM. Used for high-performance graphics cards, server processors and all kinds of processors, HBM2 memory is wanted and relatively expensive solution, however, when Micron enters the market of its manufacturing, prices, and the market should adjust for the new player. Previously, only SK-Hynix and Samsung were manufacturing the HBM2 DRAM, however, Micron will join them and they will again form a "big-three" pact that dominates the memory market.

Up until now, Micron used to lay all hopes on its proprietary Hybrid Memory Cube (HMC) DRAM type, which didn't gain much traction from customers and it never really took off. Only a few rare products used it, as Fujitsu SPARC64 XIfx CPU used in Fujitsu PRIMEHPC FX100 supercomputer introduced in 2015. Micron announced to suspend works on HMC in 2018 and decided to devote their efforts to GDDR6 and HBM development. So, as a result, we are seeing that they will launch HBM2 DRAM products sometime this year.

TEAMGROUP today announces that T-FORCE VULCAN Z and DARK Z gaming memory will be the first to release the large capacity, 32 GB single stick memory. There are DDR4 2666 and DDR4 3000 two different frequency of memory modules available to offer desktop PC a complete selection of expansions. It can provide the powerful computer equipment with high storage speed and multitasking capabilities that creators need for video content creation and editing. It can also perfectly support all AMD and Intel's consumer platforms.

The invincible T-FORCE gaming series is your top choice in 2020 when it comes to large capacity upgrades. T-FORCE VULCAN Z and DARK Z, which are praised by the media around the world, will be the first to release the large capacity, 32 GB single stick memory. VULCAN Z launches DDR4-2666 MHz and DDR4-3000 MHz, two different frequencies of single channel kit and dual channel kit (32 GB X2). And DARK Z will mainly provide a DDR4-3000 MHz dual channel kit (32 GB X2). Consumers can choose a suitable specification based on their personal usage. Not only can process large files easily, but it can also upgrade capacity and handle multiple data computing at the same time. This can increase the applications of desktop computers.

The world's leading memory brand, TEAMGROUP today announces that the T-FORCE XTREEM ARGB Full Mirror Gaming Memory has won the Red Dot Design Award 2020. The XTREEM ARGB has earned an enthusiastic response from gamers around the globe ever since its release. It stands out among 6,500 entries worldwide and overwhelmingly praised by international experts. TEAMGROUP's strength and creativity in product research and development make the T-FORCE gaming brand shine at international design awards once again.

The German Red Dot Design Award, one of the world's four major design awards, has an extraordinary influence in the industry and is also an important indicator for designers. It was founded by the famous German design association, Design Zentrum Nordrhein Westfalen in 1955. Global professional jury judge entries based on creativity, solutions, product communication design and concept. The award has attracted over six thousand entries from more than 60 countries. And T-FORE XTREEM ARGB Full Mirror Gaming Memory has won the award with product uniqueness and rich creativity, and shines in the design field.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 512-gigabyte (GB) eUFS (embedded Universal Flash Storage) 3.1 for use in flagship smartphones. Delivering three times the write speed of the previous 512 GB eUFS 3.0 mobile memory, Samsung's new eUFS 3.1 breaks the 1 GB/s performance threshold in smartphone storage.

"With our introduction of the fastest mobile storage, smartphone users will no longer have to worry about the bottleneck they face with conventional storage cards," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "The new eUFS 3.1 reflects our continuing commitment to supporting the rapidly increasing demands from global smartphone makers this year."

Microsoft's upcoming Xbox Series X entertainment system is shaping up to be a technological monstrosity. Xbox group head at Microsoft, Phil Spencer, last revealed a picture of its semi-custom SoC back in January, by setting it as his Twitter display picture. Over the following weeks, many more technical details, such as the chip's 12 TFLOP/s combined compute power, would be let out. Spencer updated his display picture revealing a segment of the Xbox Series X mainboard with the SoC and memory chips surrounding it. The picture reveals the large SoC package in the center, surrounded on three sides by ten memory chips, possibly GDDR6, each with its own wiring to the SoC. This indicates that the SoC features a 320-bit wide memory interface.

As for the memory density, there's no way to tell. It could be 10 GB if those are 8 Gbit memory chips, or 20 GB if those are 16 Gbit. It boils down to which device the Xbox Series X the company wants to succeed. The Xbox One S features 8 GB of DDR3, while the spruced up Xbox One X features 12 GB of GDDR5. If the new Xbox Series X succeeds the latter, then it could very well feature 20 GB, more so given Microsoft's lofty design goals (4K UHD gaming with real-time ray-tracing). Microsoft leverages hUMA to use a common memory pool for both the CPU and GPU. Designed in collaboration with AMD on a TSMC 7 nm-class node (likely the N7P), the SoC features "Zen 2" CPU cores, and a GPU based on the RDNA2 graphics architecture.

One of the world's leading PC components and peripheral manufacturers, is pleased to announce that they have entered a partnership with Exertis, CCL Computers, Ebuer.com, Novatech, and Box.co to expand the GeIL brand across the United Kingdom. There are more channels to purchase GeIL's first-class product in the United Kingdom and better overall customer experience. A total win-win for PC enthusiasts.

"We are excited to have this opportunity to bring our line of popular memory products to even more customers across the United Kingdom, commented Jennifer Huang, Vice President at GeIL Memory. "We put a great deal of thought and consideration into whom we would work with, and these are all well-established and highly respected companies collaborating with us. Through this new partnership, our customers are going to get amazing access to our memory, as well as exceptional price points."

Rambus, a maker of various Interface IP solutions, today announced the latest addition to its high-speed memory interface IP product portfolio in form of High Bandwidth Memory 2E (HBM2E) controller and physical layer (PHY) IP solution. The two IPs are enabling customers to completely integrate the HBM2E memory into their products, given that Rambus provides a complete solution for controlling and interfacing the memory. The design that Ramus offers can support for 12-high DRAM stacks of up to 24 Gb devices, making for up to 36 GB of memory per 3D stack. This single 3D stack is capable of delivering 3.2 Gbps over a 1024-bit wide interface, delivering 410 GB/s of bandwidth per stack.

The HBM2E controller core is DFI 3.1 compatible and has support for logic interfaces like AXI, OCP, or a custom one, so the customer can choose a way to integrate this core in their design. With a purchase of their HBM2E IP, Rambus will provide source code written in Hardware Description Language (HDL) and GDSII file containing the layout of the interface.

Researchers have found another vulnerability Inside Intel's Converged Security and Management Engine (CSME). For starters, the CSME is a tiny CPU within a CPU that has access to whole data throughput and is dedicated to the security of the whole SoC. The CSME system is a kind of a black box, given that Intel is protecting its documentation so it can stop its copying by other vendors, however, researchers have discovered a flaw in the design of CSME and are now able to exploit millions of systems based on Intel CPUs manufactured in the last five years.

Discovered by Positive Technologies, the flaw is lying inside the Read-Only Memory (ROM) of the CSME. Given that the Mask ROM is hardcoded in the CPU, the exploit can not be fixed by a simple firmware update. The researchers from Positive Technologies describe it as such: "Unfortunately, no security system is perfect. Like all security architectures, Intel's had a weakness: the boot ROM, in this case. An early-stage vulnerability in ROM enables control over the reading of the Chipset Key and generation of all other encryption keys. One of these keys is for the Integrity Control Value Blob (ICVB). With this key, attackers can forge the code of any Intel CSME firmware module in a way that authenticity checks cannot detect. This is functionally equivalent to a breach of the private key for the Intel CSME firmware digital signature, but limited to a specific platform."

The PCI Express 4.0 specification was designed to double the performance of server and storage systems, pushing speeds up to 16.0 gigatransfers per second (GT/s) or 2 gigabits per second (Gb/s) throughput per lane, and driving new performance levels for cloud and enterprise applications. Today, KIOXIA America, Inc. (formerly Toshiba Memory America, Inc.) announced that its lineup of CM6 and CD6 Series PCIe 4.0 NVM Express (NVMe ) enterprise and data center solid state drives (SSDs) are now shipping to customers.

An established leader in developing PCIe and NVMe SSDs, KIOXIA delivers never-before-seen performance. KIOXIA was the first company to publicly demonstrate PCIe 4.0 SSDs and is now the first to ship these next-generation drives. The CM6 and CD6 Series SSDs are compliant to the latest NVMe specification, and include key features such as in-band NVMe-MI, persistent event log, namespace granularity, and shared stream writes. Additionally, both drives are SFF-TA-1001 conformant (also known as U.3), which allows them to be used in tri-mode enabled backplanes, which can accept SAS, SATA or NVMe SSDs.