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Crucial MX500 2 TB (Micron B47R)

2 TB
Capacity
SM2259H
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Crucial MX500 is a solid-state drive in the 2.5" form factor, launched in January 2018. It is available in capacities ranging from 250 GB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Crucial MX500 interfaces using a SATA 6 Gbps connection. The SSD controller is the SM2259H from Silicon Motion, a DRAM cache chip is available. Crucial has installed 176-layer TLC NAND flash on the MX500, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The MX500 is rated for sequential read speeds of up to 560 MB/s and 510 MB/s write; random IO reaches 95K IOPS for read and 90K for writes.
At its launch, the SSD was priced at 500 USD. The warranty length is set to five years, which is an excellent warranty period. Crucial guarantees an endurance rating of 700 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB 4 TB
Hardware Versions:
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Jan 2018
Price at Launch: 500 USD
Part Number: CT2000MX500SSD1
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.07 W (Idle)
Unknown (Avg)
Unknown (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2259H
Architecture: ARC
Core Count: Single-Core
Frequency: 437 MHz
Foundry: TSMC
Process: 40 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: DDR3-1866 CL16
Name: Micron D9SHD (MT41K256M16TW-107:P)
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 560 MB/s
Sequential Write: 510 MB/s
Random Read: 95,000 IOPS
Random Write: 90,000 IOPS
Endurance: 700 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Oct 5th, 2024 03:06 EDT change timezone

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