Report an Error

HP EX900 120 GB

120 GB
Capacity
SM2263XT
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
SSD Controller
Controller
NAND Die
NAND Die
The HP EX900 was a solid-state drive in the M.2 2280 form factor, launched in 2018, that is no longer in production. It was available in capacities ranging from 120 GB to 500 GB. This page reports specifications for the 120 GB variant. With the rest of the system, the HP EX900 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2263XT from Silicon Motion, a DRAM cache is not available. HP has installed 64-layer TLC NAND flash on the EX900, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The EX900 is rated for sequential read speeds of up to 1,900 MB/s and 650 MB/s write; random IOPS reach up to 110K for reads and 100K for writes.
At its launch, the SSD was priced at 60 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. HP guarantees an endurance rating of 70 TBW, a good value.

Solid-State-Drive

Capacity: 120 GB
Variants: 120 GB 250 GB 500 GB
Overprovisioning: 16.2 GB / 14.5 %
Production: End-of-life
Released: 2018
Price at Launch: 60 USD
Part Number: 2YY42AA#ABC
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2263XT
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 575 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B16A FortisFlash
Rebranded: (Rebraned by Biwin)
Type: TLC
Technology: 64-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 4 chips @ 256 Gbit
ONFI: 4.0
Topology: Floating Gate
Process: 20 nm
Die Size: 58 mm²
(4.4 Gbit/mm²)
Dies per Chip: 1 die @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 76 µs
Program Time (tProg): 820 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 842 MB/s
Die Write Speed: 39 MB/s
Endurance:
(up to)
1500 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 504 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 1,900 MB/s
Sequential Write: 650 MB/s
Random Read: 110,000 IOPS
Random Write: 100,000 IOPS
Endurance: 70 TBW
Warranty: 3 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.5
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

The difference between this and the non-XT revision (SM2263, SM2263G, SM2263ENG, etc.) is that this revision doesn't support the DRAM cache, in fact it uses HMB (Host Memory Buffer).

May 11th, 2024 03:15 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts