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HP FX900 1 TB

1 TB
Capacity
IG5220
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Front
PCB Front
PCB Back
PCB Back
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The HP FX900 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the HP FX900 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5220 (RainierQX) from InnoGrit, a DRAM cache is not available. HP has installed 176-layer TLC NAND flash on the FX900, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 281 GB, once it is full, writes complete at 2000 MB/s. Copying data out of the SLC cache (folding) completes at 500 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The FX900 is rated for sequential read speeds of up to 5,000 MB/s and 4,800 MB/s write; random IOPS reach up to 828K for reads and 0K for writes.
At its launch, the SSD was priced at 105 USD. The warranty length is set to five years, which is an excellent warranty period. HP guarantees an endurance rating of 400 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: 2022
Price at Launch: 105 USD
Part Number: 57S53AA#ABB
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: InnoGrit
Name: IG5220 (RainierQX)
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 666 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 4 @ 2,400 MT/s
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Rebranded: BW29F4T08ENLEE
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 2 chips @ 4 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,800 MB/s
Random Read: 828,000 IOPS
Random Write: 663 IOPS
Endurance: 400 TBW
Warranty: 5 Years
MTBF: 1.0 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 281 GB
(dynamic only)
Speed when Cache Exhausted: approx. 2000 MB/s
Cache Folding Speed: 500 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

TLC Write speeds after pSLC Cache: ~ 2.0 GB/s
TLC Write speeds w/ copyback: ~ 500 MB/s

Controller:

Possibly 4 channels running at 1600 MT/s ~ 2400 MT/s.

NAND Die:

Endurance in pSLC Mode: 40.000 ~ 60.000 P.E.C.
This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Dec 10th, 2024 08:14 CST change timezone

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