Report an Error

HP FX900 256 GB

256 GB
Capacity
IG5220
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The HP FX900 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 256 GB variant. With the rest of the system, the HP FX900 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5220 (RainierQX) from InnoGrit, a DRAM cache is not available. HP has installed 176-layer TLC NAND flash on the FX900, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The FX900 is rated for sequential read speeds of up to 4,600 MB/s and 1,700 MB/s write; random IOPS reach up to 281K for reads and 325K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. HP guarantees an endurance rating of 100 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 256 GB
Variants: 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 17.6 GB / 7.4 %
Production: Active
Released: 2022
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: InnoGrit
Name: IG5220 (RainierQX)
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 666 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 4 @ 2,400 MT/s
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: Unknown
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 4,600 MB/s
Sequential Write: 1,700 MB/s
Random Read: 281,000 IOPS
Random Write: 325,000 IOPS
Endurance: 100 TBW
Warranty: 5 Years
MTBF: 1.0 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

Possibly 4 channels running at 1600 MT/s ~ 2400 MT/s.

NAND Die:

This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Nov 5th, 2024 11:02 EST change timezone

New Forum Posts

Popular Reviews

Controversial News Posts