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Inland TD510 4 TB

4 TB
Capacity
Phison E26
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Inland TD510 is a solid-state drive in the M.2 2280 form factor, launched on March 1st, 2023. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 4 TB variant. With the rest of the system, the Inland TD510 interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the PS5026-E26 from Phison, a DRAM cache chip is available. Inland has installed 232-layer TLC NAND flash on the TD510, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The TD510 is rated for sequential read speeds of up to 10,000 MB/s and 9,500 MB/s write; random IOPS reach up to 1400K for reads and 1500K for writes.
The SSD's price at launch is unknown. The warranty length is set to 6 years, which is a very long warranty, better than most other drives on the market. Inland guarantees an endurance rating of 3000 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 370.7 GB / 10.0 %
Production: Active
Released: Mar 1st, 2023
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: 0.90 W (Idle)
Unknown (Avg)
11.0 W (Max)

Controller

Manufacturer: Phison
Name: PS5026-E26
Architecture: ARM 32-bit Cortex-R5 + AndesCore 32-bit N25F RISC-V
Core Count: 5-Core
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 2,400 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 4 chips @ 8 Tbit
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
2500 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: LPDDR4
Name: SK Hynix
Capacity: 8192 MB
(2x 4096 MB)

Performance

Sequential Read: 10,000 MB/s
Sequential Write: 9,500 MB/s
Random Read: 1,400,000 IOPS
Random Write: 1,500,000 IOPS
Endurance: 3000 TBW
Warranty: 6 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

This controller features a dual core Cortex-R5 as a primary cores, while a Tripple AndesCore 32-bit N25F RISC-V at 400-500 MHz act as a CoX Processor.

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

May 9th, 2024 08:35 EDT change timezone

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