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Samsung 860 EVO 2 TB

2 TB
Capacity
Samsung MJX Maru
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Back
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 860 EVO was a solid-state drive in the 2.5" form factor, launched on January 23rd, 2018, that is no longer in production. It was available in capacities ranging from 250 GB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Samsung 860 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MJX Maru (S4LR030) from Samsung, a DRAM cache chip is available. Samsung has installed 64-layer TLC NAND flash on the 860 EVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 78 GB, once it is full, writes complete at 500 MB/s. The 860 EVO is rated for sequential read speeds of up to 550 MB/s and 520 MB/s write; random IOPS reach up to 98K for reads and 90K for writes.
At its launch, the SSD was priced at 650 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 1200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB 4 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: End-of-life
Released: Jan 23rd, 2018
Price at Launch: 650 USD
Part Number: MZ-76E2T0E/AM
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.05 W (Idle)
3.0 W (Avg)
4.0 W (Max)

Controller

Manufacturer: Samsung
Name: MJX Maru (S4LR030)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 1,000 MHz
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Part Number: K9DVGB8JIM
Type: TLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 8 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 20 nm
Die Size: 128 mm²
(4.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3.5 ms
Endurance:
(up to)
7000 P/E Cycles
(20000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 5748 Blocks

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4F6E6S4HM-BGCJ
Capacity: 2048 MB
(1x 2048 MB)
Organization: 16Gx16

Performance

Sequential Read: 550 MB/s
Sequential Write: 520 MB/s
Random Read: 98,000 IOPS
Random Write: 90,000 IOPS
Endurance: 1200 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 78 GB
(72 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 500 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

NAND Speed Bus between Controller and NAND itself might be: 533 - 800 MT/s, although the NAND supports 1 GT/s
Have variants Single-sided

Controller:

Controller Clock speed: Up to 1 GHz.

May 10th, 2024 05:49 EDT change timezone

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