Report an Error

Samsung 860 EVO 250 GB

250 GB
Capacity
Samsung MJX Maru
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Samsung's Website
Back
Package
Samsung's Website
Package
DRAM
DRAM
Flash
Flash
SSD Controller
Controller
The Samsung 860 EVO was a solid-state drive in the 2.5" form factor, launched on January 23rd, 2018, that is no longer in production. It was available in capacities ranging from 250 GB to 4 TB. This page reports specifications for the 250 GB variant. With the rest of the system, the Samsung 860 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MJX Maru (S4LR030) from Samsung, a DRAM cache chip is available. Samsung has installed 64-layer TLC NAND flash on the 860 EVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 12 GB, once it is full, writes complete at 300 MB/s. The 860 EVO is rated for sequential read speeds of up to 550 MB/s and 520 MB/s write; random IO reaches 98K IOPS for read and 90K for writes.
At its launch, the SSD was priced at 95 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 150 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 250 GB
Variants: 250 GB 500 GB 1 TB 2 TB 4 TB
Overprovisioning: 23.2 GB / 10.0 %
Production: End-of-life
Released: Jan 23rd, 2018
Price at Launch: 95 USD
Part Number: MZ-76E250E
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.05 W (Idle)
2.2 W (Avg)
4.0 W (Max)

Controller

Manufacturer: Samsung
Name: MJX Maru (S4LR030)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 1,000 MHz
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Part Number: K9CKGY8H5A-CCK0
Type: TLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 1 Tbit
Topology: Charge Trap
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3.5 ms
Endurance:
(up to)
7000 P/E Cycles
(20000 in SLC Mode)
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4F4E6S4HF-BGCJ
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 550 MB/s
Sequential Write: 520 MB/s
Random Read: 98,000 IOPS
Random Write: 90,000 IOPS
Endurance: 150 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 12 GB
(9 GB Dynamic
+ 3 GB Static)
Speed when Cache Exhausted: approx. 300 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

NAND Speed Bus between Controller and NAND itself might be: 533 - 800 MT/s, although the NAND supports 1 GT/s
Have variants Single-sided
DRAM Variant 2: 512MB SAMSUNG K4F4E6S4HF-BGCH
NAND Variant 2: 256GB V4 V-NAND SAMSUNG K90UGY8J5M-CCK0
NAND Variant 3: 256GB V4 V-NAND SAMSUNG K9CMGY8J5M-CCK0

Controller:

Controller Clock speed: Up to 1 GHz.

Apr 27th, 2024 13:28 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts