Capacity: | 1 TB (1000 GB) |
---|---|
Variants: | 250 GB 500 GB 1 TB 2 TB |
Overprovisioning: | 92.7 GB / 10.0 % |
Production: | End-of-life |
Released: | May 7th, 2018 |
Price at Launch: | 450 USD |
Part Number: | MZ-V7E1T0BW |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: |
0.03 W (Idle) 5.7 W (Avg) 10.0 W (Max) |
Manufacturer: | Samsung |
---|---|
Name: | Phoenix (S4LR020) |
Architecture: | ARM 32-bit Cortex-R7 |
Core Count: | 5-Core |
Foundry: | Samsung FinFET |
Process: | 14 nm |
Flash Channels: | 8 |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V4 |
Part Number: | K9DUGY8H5A-CCK0 |
Rebranded: | SAMSUNG V4 V-NAND |
Type: | TLC |
Technology: | 64-layer |
Speed: | 1000 MT/s |
Capacity: | 2 chips @ 4 Tbit |
Topology: | Charge Trap |
Dies per Chip: | 16 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
72 per NAND String
88.9% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 700 µs |
Block Erase Time (tBERS): | 3.5 ms |
Endurance: (up to) |
7000 P/E Cycles
(20000 in SLC Mode) |
Page Size: | 16 KB |
Type: | LPDDR4-1866 |
---|---|
Name: | SAMSUNG K4F8E3D4HF-BGCH |
Capacity: |
1024 MB
(1x 1024 MB) |
Organization: | 8Gx32 |
Host-Memory-Buffer (HMB): | N/A |
Sequential Read: | 3,400 MB/s |
---|---|
Sequential Write: | 2,500 MB/s |
Random Read: | 500,000 IOPS |
Random Write: | 450,000 IOPS |
Endurance: | 600 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: |
approx. 42 GB
(36 GB Dynamic + 6 GB Static) |
Speed when Cache Exhausted: | approx. 1200 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Drive:Has two variants: |