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Samsung 970 EVO 1 TB

1 TB
Capacity
Samsung Phoenix
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
Package
Package
DRAM
AnandTech
DRAM
Flash
AnandTech
Flash
SSD Controller
Controller
The Samsung 970 EVO was a solid-state drive in the M.2 2280 form factor, launched on May 7th, 2018, that is no longer in production. It was available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 970 EVO interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Phoenix (S4LR020) from Samsung, a DRAM cache chip is available. Samsung has installed 64-layer TLC NAND flash on the 970 EVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 42 GB, once it is full, writes complete at 1200 MB/s. The 970 EVO is rated for sequential read speeds of up to 3,400 MB/s and 2,500 MB/s write; random IOPS reach up to 500K for reads and 450K for writes.
At its launch, the SSD was priced at 450 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: End-of-life
Released: May 7th, 2018
Price at Launch: 450 USD
Part Number: MZ-V7E1T0BW
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.03 W (Idle)
5.7 W (Avg)
10.0 W (Max)

Controller

Manufacturer: Samsung
Name: Phoenix (S4LR020)
Architecture: ARM 32-bit Cortex-R7
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Part Number: K9DUGY8H5A-CCK0
Rebranded: SAMSUNG V4 V-NAND
Type: TLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 4 Tbit
Topology: Charge Trap
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3.5 ms
Endurance:
(up to)
7000 P/E Cycles
(20000 in SLC Mode)
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4F8E3D4HF-BGCH
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx32
Host-Memory-Buffer (HMB): N/A

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 2,500 MB/s
Random Read: 500,000 IOPS
Random Write: 450,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 42 GB
(36 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 1200 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

Has two variants:
Rev. 1: Samsung V3 V-NAND 48-Layers
Rev. 2: Samsung V4 V-NAND 64-Layers

May 11th, 2024 04:51 EDT change timezone

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