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Samsung 980 1 TB (V-NAND V6P 512Gb)

1 TB
Capacity
Samsung Pablo
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
The Samsung 980 is a solid-state drive in the M.2 2280 form factor, launched in December 2023. It is available in capacities ranging from 500 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 980 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Pablo (S4LR033) from Samsung, a DRAM cache is not available. Samsung has installed 133-layer TLC NAND flash on the 980, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 160 GB, once it is full, writes complete at 430 MB/s. The 980 is rated for sequential read speeds of up to 3,500 MB/s and 3,000 MB/s write; random IO reaches 480K IOPS for read and 500K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 500 GB 1 TB
Hardware Versions:
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: Dec 2023
Part Number: MZ-V8V1T0BW
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.4
Power Draw: 0.05 W (Idle)
4.6 W (Avg)
5.1 W (Max)

Controller

Manufacturer: Samsung
Name: Pablo (S4LR033)
Architecture: ARM 32-bit Cortex-R8 + ARM 32-bit Cortex-R5
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6 Prime
Type: TLC
Technology: 133-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
97.8% Vertical Efficiency
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 3,000 MB/s
Random Read: 480,000 IOPS
Random Write: 500,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 160 GB
(dynamic only)
Speed when Cache Exhausted: approx. 430 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

4-sub planes

Nov 14th, 2024 05:57 EST change timezone

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