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Samsung 990 Pro 1 TB (Pascal + V7)

1 TB
Capacity
Samsung Pascal
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

PCB Front
Today.Line
PCB Front
DRAM
Today.Line
DRAM
Flash
Today.Line
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 990 Pro is a solid-state drive in the M.2 2280 form factor, launched on August 24th, 2022. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 990 Pro interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Pascal (S4LV008) from Samsung, a DRAM cache chip is available. Samsung has installed 176-layer TLC NAND flash on the 990 Pro, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 114 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 990 Pro is rated for sequential read speeds of up to 7,450 MB/s and 6,900 MB/s write; random IOPS reach up to 1200K for reads and 1550K for writes.
At its launch, the SSD was priced at 179 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB
Hardware Versions:
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Aug 24th, 2022
Price at Launch: 179 USD
Part Number: MZ-V9P1T0CW
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 2.0
Power Draw: 0.05 W (Idle)
Unknown (Avg)
7.8 W (Max)

Controller

Manufacturer: Samsung
Name: Pascal (S4LV008)
Architecture: ARM 32-bit Cortex-R8
Foundry: Samsung FinFET
Process: 8 nm
Flash Channels: 8 @ 2,000 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V7
Part Number: K90UGY8J5D-CCK0
Type: TLC
Technology: 176-layer
Speed: 2000 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 60 mm²
(8.5 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 191 per NAND String
92.1% Vertical Efficiency
Read Time (tR): 40 µs
Program Time (tProg): 347 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 1600 MB/s
Die Write Speed: 184 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4F8E164HM-BGCJ
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,450 MB/s
Sequential Write: 6,900 MB/s
Random Read: 1,200,000 IOPS
Random Write: 1,550,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 114 GB
(108 GB Dynamic
+ 6 GB Static)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

Could be another penta-core controller just like it's predecessor.

NAND Die:

Upper Deck: 101 Gates
Lower Deck: 90 Gates
tPROG without overhead: ~ 347µs (184 MB/s) per each die
tPROG w/ ~25% overhead: ~ 463µs (138 MB/s) per each die

Oct 5th, 2024 05:20 EDT change timezone

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