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Western Digital SN730 1 TB

1 TB
Capacity
WD 20-82-00705
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
PCB Front
PCB Front
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Western Digital SN730 is a solid-state drive in the M.2 2280 form factor, launched in 2019. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Western Digital SN730 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 20-82-00705-A2 Triton MP28 from WD, a DRAM cache chip is available. Western Digital has installed 96-layer TLC NAND flash on the SN730, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 16 GB, once it is full, writes complete at 1800 MB/s. The SN730 is rated for sequential read speeds of up to 3,400 MB/s and 3,100 MB/s write; random IO reaches 550K IOPS for read and 550K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 400 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: 2019
Part Number: SDBPNTY-1TOO
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.10 W (Idle)
2.2 W (Avg)
5.4 W (Max)

Controller

Manufacturer: WD
Name: 20-82-00705-A2 Triton MP28
Architecture: ARM 32-bit
Core Count: Triple-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Rebranded: 60082 512G (Rebranded by SanDisk)
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 59 µs
Program Time (tProg): 625 µs
Die Read Speed: 551 MB/s
Die Write Speed: 56 MB/s
Endurance:
(up to)
1500 P/E Cycles
(3000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4-2666 CL18
Name: Micron MT40A512M16LY-075:E (D9WFH)
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 3,100 MB/s
Random Read: 550,000 IOPS
Random Write: 550,000 IOPS
Endurance: 400 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 16 GB
(static only)
Speed when Cache Exhausted: approx. 1800 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

Data collected from the Manufacturer's Datasheet

NAND Die:

Read latency tR: 58 µs (ABL)
Performance:
tPROG (typical) - 2100 µs (MSB)
tR (typical) - 59 µs
tPROG (ower page) ~ 200 µs
Estimated tPROG between 625 ~ 975 µs

May 11th, 2024 07:10 EDT change timezone

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