In the world of modern embedded computing, motherboards and systems are equipped with numerous M.2 and Mini-PCI Express sockets. These sockets provide ideal homes for networking communication adapters and solid-state drives (SSDs), including NVMe-compatible SSDs. With an abundance of sockets, embedded systems now have unparalleled connectivity and storage options.

Cervoz recognizes this need and introduces a new industrial SSD perfectly suited for these boards and systems: the M.2 2242 PCIe Gen 3 x 2 (B+M Key) SSD, T421. This SSD is designed specifically for embedded motherboards and systems, making it a perfect fit for industrial applications ranging from retail and gaming solutions to embedded computing devices.

ATP Electronics, the global leader in specialized storage and memory solutions, introduces its latest high-speed N601 Series M.2 2280 and U.2 solid state drives (SSDs) sporting the 4th generation PCIe interface and supporting the NVMe protocol. The new ATP PCIe Gen 4 SSDs' 16 GT/s data rate is double that of the previous generation, translating to a bandwidth of 2 GB/s for every PCIe lane.

Using x4 lanes, these SSDs have a maximum bandwidth of 8 GB/s, meeting the growing need for high-speed data transfer in today's demanding applications and making them suitable for both read/write-intensive, mission-critical industrial applications such as networking/server, 5G, data logging, surveillance, and imaging, with performance on par, if not better, than mainstream PCIe Gen 4 consumer SSDs in the market.

Micron Technology, Inc. announced today that it is now delivering qualification samples of its Universal Flash Storage (UFS) 4.0 mobile solution, built on its advanced 232-layer 3D NAND. Offered in high capacities up to 1 terabyte (TB), the UFS 4.0 storage solution is being shipped to select global smartphone manufacturers and chipset vendors. Micron's newest mobile flash storage outpaces competition on several critical NAND benchmarks, delivering the industry's fastest performance for flagship smartphones with fast bootup, app launches and video downloads.

"Micron's latest mobile solution tightly weaves together our best-in-class UFS 4.0 technology, proprietary low-power controller, 232-layer NAND and highly configurable firmware architecture to deliver unmatched performance," said Mark Montierth, corporate vice president and general manager of Micron's Mobile Business Unit. "Together, these technologies position Micron at the forefront of delivering the performance and low-power innovations our customers need to enable an exceptional end-user experience for flagship smartphones."

Lam Research Corp. (Nasdaq: LRCX) today introduced Coronus DX, the industry's first bevel deposition solution optimized to address key manufacturing challenges in next-generation logic, 3D NAND and advanced packaging applications. As semiconductors continue to scale, manufacturing becomes increasingly complex with hundreds of process steps needed to build nanometer-sized devices on a silicon wafer. In a single step, Coronus DX deposits a proprietary layer of protective film on both sides of the wafer edge that helps prevent defects and damage that can often occur during advanced semiconductor manufacturing. This powerful protection increases yield and enables chipmakers to implement new leading-edge processes for the production of next-generation chips. Coronus DX is the newest addition to the Coronus product family and extends Lam's leadership in bevel technology.

"In the era of 3D chipmaking, production is complex and costly," said Sesha Varadarajan, senior vice present of the Global Products Group at Lam Research. "Building on Lam's expertise in bevel innovation, Coronus DX helps drive more predictable manufacturing and significantly higher yield, paving the way for adoption of advanced logic, packaging and 3D NAND production processes that weren't previously feasible."

Tokyo Electron announced that its development team at Tokyo Electron Miyagi—the development and manufacturing site for its plasma etch systems—has developed an innovative etch technology capable of producing memory channel holes in advanced 3D NAND devices with a stack of over 400 layers. The new process developed by the team has brought dielectric etch application to the cryogenic temperature range for the first time, producing a system with exceptionally high etch rates.

The innovative technology not only enables a 10-µm-deep etch with a high aspect ratio in just 33 minutes, but also can reduce the global warming potential by 84% compared with previous technologies. The geometry of the etched structure is quite well-defined as shown in the figure 1. Potential innovations enabled by this technology will spur creation of 3D NAND flash memory with even larger capacity.

MSI, the world's leading gaming PC hardware brand, is proud to announce the new SPATIUM M570 PRO Series, featuring the revolutionary PHISON E26 PCIe Gen 5 SSD controller and state-of-the-art 3D NAND flash. Designed to push the limits of storage performance, the SPATIUM M570 PRO Series SSD delivers an astonishing top read speed of 14 GB/s, breaking the world record and setting new industry standards.

The strong collaboration and cooperation between MSI and PHISON have made this record possible as both companies share in the excitement of pushing the envelope. "K.S.Pua, CEO of Phison Electronics, said that the cooperation between Phison and MSI started from the SSD product line. Since both companies have their own expertise in NAND controller and computer system integration respectively, and in addition to SSD, MSI has also actively expanded its strategy in the fields of gaming, content creators, commercial, industrial, robotics, and even automotive in recent years, where the application markets are in line with Phison's long-term strategy, so the two companies hit it off. The SPATIUM M570 Pro Series SSD announced by MSI this time adopted Phison's E26 SSD controller. Since the performance of PCIe 5.0 is much faster than the previous generation of PCIe 4.0, the two companies have conducted a lot of tests and discussions on power consumption and heat dissipation, which is a valuable cooperation experience. In the future, Phison will continue to support MSI through controller technology."

Global memory leader, Team Group, continues to develop and manufacture innovative, high-performance, and reliable industrial memory storage products, providing customers with convenient and flexible solutions. Today, it is releasing the brand new P845-M30 SSD, designed for the M.2 2230 form factor and PCIe Gen 4 interface. This compact, high-performance SSD is suitable for mini industrial PCs, handheld embedded applications, and AIoT-related tasks.

The P845-M30 comes with 112 layers of high-quality 3D NAND flash memory and uses page mapping technology to reduce its block P/E cycling frequency, extending its lifespan, and increasing its random access speeds. It is available in capacities ranging from 256 GB to 1 TB and measures only 30 mm in length. In addition, its support of the PCIe Gen 4 interface allows it to provide high-speed transfers with low power consumption. The P845-M30 can upgrade your device's performance without taking up space, making it the ideal SSD solution for mini industrial computers, which require a small form factor and large capacities.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. Relevant patent applications were published with the United States Patent Application Publication on April 6, 2023.

"3D X-DRAM will be the absolute future growth driver for the Semiconductor industry," said Andy Hsu, Founder and CEO of NEO Semiconductor and an accomplished technology inventor with more than 120 U.S. patents. "Today I can say with confidence that Neo is becoming a clear leader in the 3D DRAM market. Our invention, compared to the other solutions in the market today, is very simple and less expensive to manufacture and scale. The industry can expect to achieve 8X density and capacity improvements per decade with our 3D X-DRAM."

The 43rd edition of the Symposium on VLSI Technology & Circuits, held annually in Kyoto Japan, is charting the way forward for the devices of the future. Held between June 11-16, 2023, this year's symposium will see structured presentations, Q&A, and discussions on some of the biggest technological developments in the logic chip world. The lead (plenary) sessions drop a major hint on the way the wind is blowing. Leadning from the front is an address by Suraya Bhattacharya, Director, System-in-Package, A*STAR, IME, on "Multi-Chiplet Heterogeneous Integration Packaging for Semiconductor System Scaling."

Companies such as AMD and Intel read the tea-leaves, that Moore's Law is buckling, and it's no longer economically feasible to build large monolithic processors at the kind of prices they commanded a decade ago. This has caused companies to ration their allocation of the latest foundry node to only the specific components of their chip design that benefit the most from the latest node, and identify components that don't benefit as much, and disintegrate them into separate dies build on older foundry nodes, which are then connected through innovative packaging technologies.

According to the South China Morning Post (SCMP) sources, Yangtze Memory Technologies Corp (YMTC) has been plotting to manufacture its advanced 3D NAND flash using locally sourced equipment. As the source notes, YMTC has placed big orders from local equipment makers in a secret project codenamed Wudangshan, named after the Taoist mountain in the company's home province of Hubei. Last year, YTMC announced significant progress towards creating 200+ layer 3D NAND flash before other 3D NAND makers like Micron and SK Hynix. Called X3-9070, the chip is a 232-layer 3D NAND based on the company's advanced Xtacking 3.0 architecture.

As the SCMP finds, YTMC has placed big orders at Beijing-based Naura Technology Group, maker of etching tools and competitor to Lam Research, to manufacture its advanced flash memory. Additionally, YTMC has reportedly asked all its tool suppliers to remove all logos and other marks from equipment to avoid additional US sanctions holding the development back. This significant order block comes after the state invested 7 billion US Dollars into YTMC to boost its production capacity, and we see the company utilizing those resources right away. However, few industry analysts have identified a few "choke points" in YTMC's path to independent manufacturing, as there are still no viable domestic alternatives to US-based tool makers in areas such as metrology tools, where KLA is the dominant player, and lithography tools, where ASML, Nikon, and Canon, are noteworthy. The Wuhan-based Wudangshan project remains secret about dealing with those choke points in the future.

Crucial is keen to drum up early interest for an upcoming SSD model, and the Linus Tech Tips team has received and tested a sample unit. The T700 is a PCIe Gen 5 NVMe M.2 SSD storage solution based around a Phison PS5026-E26 controller, which is a very common choice for the current generation of PCIe 5.0 SSDs available on the market. Micron 3D NAND chips look to be present on the T700's PCB, and a Crucial-branded heatsink is mounted to the provided sample unit. It is interesting to note that the uncovered T700 unit bears a striking resemblance to Phison's E26 Engineering Reference sample, although the latter appears to feature SK Hynix memory chips, instead of Micron.

The LTT team posted benchmark results from a Crystal Disk Mark test session, and the T700 achieved maximums of 12.4 GB/s sequential read and 11.9 GB/s write speeds. This represents an almost two fold jump over the performance of Crucial's PCIe 4.0 based P5 Plus SSD, which is a substantial improvement and also very impressive considering the T700's usage of a passive cooling solution.

SK Hynix representatives unveiled the company's latest breakthrough in 3D NAND development at the ISSCC 2023 conference. Details of a new flash memory prototype featuring over 300 layers were revealed, and the company stated that a team of 35 engineers had contributed to the presentation material. In order to highlight the boost in performance offered by the prototype's improvements, it was compared to SK Hynix's previous record holding seventh-generation 238-layer 3D NAND. The new eighth-generation 3D NAND posted bandwidth figures with a maximum of 194 MB/s, which contrasts favorably with the older model's rate of 164 MB/s, representing an 18% increase in performance.

Recording density also benefits from the 300+ active layer design, with SK Hynix mentioning a 1 Tb (128 GB) capacity with triple level cells and a bit density of over 20 GB/mm^2. The chip features a 16 KB page size, four planes and a 2400 MT/s interface. The increase in density will result in a lower per-Tb cost during the manufacturing process. It is hoped that the end consumer will ultimately benefit from the boost in performance and capacity.

Pure Storage, a maker of various storage solutions and custom enterprise-grade SSDs, claims the company will produce SSDs with up to 300 TBs of capacity by 2026. In an interview with Pure Storage CTO Alex McMullan, Blocks & Files got exclusive information that the company targets SSD capacities of up to 300 TBs in 2026. Pure Storage creates proprietary Direct Flash Modules (DFM) SSDs which use 3D NAND chips controlled by a custom SSD controller, are used in the FlashArray systems, and run on a custom FlashBlade operating system. This level of customization allows Pure Storage to create SSD drives with remarkable capacities in the future as the 3D NAND technology advances.

In the coming years, 3D NAND flash manufacturers will switch from the current 200-layer chips to the 400/500-layer chips, driving storage density to new highs. As manufacturers update their technology, so does Pure with its DFM cards that use regular U.2 NVMe connectors in a custom ruler-style format made explicitly for Pure FlashArray systems. Compared to upcoming HDDs that Toshiba and Seagate will use, Pure Storage DFM SSDs will have much higher capacities and read/write speeds, especially as higher-density 3D NAND arrives. You can see the comparison of Pure's estimates for the future 300 TB SSDs with future HDD technology.

Silicon Motion Technology Corporation ("Silicon Motion"), a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today announced the SM2268XT, its latest high-performance PCIe Gen 4 SSD controller solution optimized for higher speed NAND transfer rates. The SM2268XT's superior performance and robust reliability allows customers to accelerate development of next-generation SSDs using current and future TLC and QLC 3D NAND flash with comprehensive data integrity and correction without compromising throughput and latency.

The SM2268XT features a dual-core ARM R8 CPU with four lanes of 16 Gb/s PCIe data flow and supports four NAND channels with up to 3,200 MT/s per channel, enabling designers to take advantage of higher throughput next-generation high-speed TLC and QLC 3D NAND flash. Its multi-core design automatically balances the compute load to deliver industry-leading sequential read and write speeds of 7,400 MB/s & 6,500 MB/s, and random read & write speed of 1,200K IOPS. In addition, its advanced architecture enables lower power consumption and rigorous data protection, providing high performance and reliability in a cost-effective DRAM-less PCIe Gen 4 NVMe SSD solution.

Transcend introduced the MTE400S, a value-ended M.2 NVMe SSD meant for the prebuilt OEM/SI channel. Built in the 42 mm-long M.2-2242 form-factor, the drive features a PCI-Express 3.0 x4 host interface. It comes in capacities of 256 GB, 512 GB, and 1 TB; and features a DRAM-less design, possibly using a Phison-sourced controller. The company didn't specify the type of 3D NAND flash used. The top-spec 1 TB variant offers transfer-speeds of up to 2000 MB/s reads, with up to 1700 MB/s writes; while the 512 GB variant writes at up to 1000 MB/s, and the 256 GB variant up to 900 MB/s; with endurance ratings of 100 TBW, 200 TBW, and 400 TBW, respectively. The company didn't reveal pricing, but these should be among the cheapest drives in the market, as they're sold in tray volumes.

At the 2023 International CES, we caught a hold of Phison, makes or arguably the most popular SSD controllers, which sprung to prominence on being the first to market with PCIe Gen 4 NVMe controllers, and now hopes to repeat it with PCIe Gen 5. We'd been shown a reference-design Phison E26-powered M.2 SSD, along with some hardware specs of the controller itself. The drive itself isn't much to look at—a standard looking M.2-2280 drive with a PCI-Express 5.0 x4 host interface, and the Phison E26 controller with its shiny IHS being prominently located next to a DDR4 memory chip, and two new-generation Micron Technology 3D NAND flash memory chips.

The Phison E26 controller, bearing the long-form model number PS5026-E26, is an NVMe 2.0 spec client-segment SSD controller. It has been built on the TSMC 12 nm FinFET silicon-fabrication node. The controller features an integrated DRAM controller with support for DDR4 and LPDDR4 memory types for use as DRAM cache. Its main flash interface is 8-channel with 32 NAND chip-enable (CE) lines, support for TLC and QLC NAND flash, a dual-CPU architecture, and hardware-acceleration for AES-256, TCG-Opal, and Pyrite. The controller features Phison's 5th generation LPDC ECC and internal RAID engines. For its reference-design 2 TB TLC-based drive, Phison claims sequential transfer rates of up to 13.5 GB/s reads, with up to 12 GB/s writes. The 4K random-access performance is rated at up to 1.5 million IOPS reads, with up to 2 million IOPS writes.

Mushkin at the 2023 International CES showed off its Vortex Redline and Vortex LX M.2 NVMe SSDs. The Vortex Redline is the company's top PCIe Gen 4 drive, combining an Innogrit IG5236 NVMe 1.4 controller with 3D TLC NAND flash, to offer transfer speeds of up to 7415 MB/s. The Vortex Redline comes in capacities of 512 GB, 1 TB, and 2 TB. The Vortex LX is a more value-oriented product, based on an unnamed Innogrit-sourced DRAMless controller. This drive features a PCIe Gen 4 interface, but offers slightly lower performance that the company didn't disclose.

The star attraction at the Mushkin booth was its Epsilon SSD that features a PCI-Express 5.0 x4 + NVMe 2.0 interface, a Phison E26-series controller, and next generation 3D NAND flash memory (possibly 232-layer). The drive features active cooling from a fan-heatsink, and while the company didn't talk about performance, drives based on this controller are known to offer up to 12 GB/s of sequential transfers. Lastly, the company showed off its lineup of 2.5-inch SATA 6 Gbps SSDs in capacities ranging all the way up to 16 TB, which are meant to be HDD replacements, and "warm" storage devices.

KIOXIA is betting big on enterprise flash storage, and demoed several of its new and already-launched NVMe products based on the company's 162-layer 3D NAND flash memory, aka 6th Generation BiCS flash. Starting off, we see several single-chip solutions, namely the BiCS5 eTLC, the BiCS Industial TLC, and the BiCS5-QLC. These are complete NVMe SSDs on a single package, targeting embedded systems, industrial PCs, and the likes. They can even be directly embedded on server motherboards to serve as boot drives, freeing up precious chassis space for the main storage devices.

The EM6 is an enterprise network-attached SSD in a 2.5-inch form-factor. This is a NAS-on-a-stick that can be deployed at large scale, and accessible as a network resource, or as an NVMe-over-Fiber device. The CM7 is a high-capacity 2.5-inch (EDSFF E3.S) SSD that comes in sizes of up to 30 TB, and has PCI-Express 5.0 x4 interface with NVMe 2.0 protocol, with endurance of up to 3 DWPD and offering FIPS 140-33 security. We also see the XD6 line of EDSFF E1.S form-factor NVMe SSDs with PCIe 4.0 interfaces, up to 3.84 TB capacity, and 1 DWPD endurance.

MSI is announcing the launch of our new Gen4 PCIe NVMe models to its SSD category - SPATIUM M461, M452 & M453 in M.2 2280 form factors that can be easily installed into compatible desktop motherboards and laptops. These new products allow MSI to continue to refine its identity as a high-performance PC brand and grow its product ecosystem by expanding SPATIUM, our high-performance storage category. Our SSDs are built with high-quality, high-density 3D NAND flash that delivers astonishing performance and endurance for professionals, content creators, and gamers.

SPATIUM M461, The Competitive PCIe 4.0 SSD for Mainstream Segment.
SPATIUM M461 was developed to meet the expectations of mainstream SSD consumers. Blazing fast speeds up to 5000 MB/sec sequential read and 4200 MB/sec sequential write speeds allow users using the latest generation of PCs to enjoy the capabilities of the PCIe Gen4 interface. Available storage capacities are 500 GB, 1 TB, 2 TB, and 4 TB.

Greenliant is now shipping mSATA and SATA M.2 2242 ArmourDrive EX Series solid state drives (SSDs) with EnduroSLC Technology for superior data retention and high endurance ranging from 60K and 120K to the industry-leading 300K program-erase (P/E) cycles. Built with Greenliant's advanced in-house controllers, these SSDs are available in 10 GB, 20 GB, 40 GB, 80 GB, 160 GB and 320 GB capacities.

mSATA and SATA M.2 2242 ArmourDrive EX Series SSDs are included in Greenliant's Long-Term Availability (LTA) program (http://bit.ly/SSD-LTA-program), providing customers with a stable portfolio of high-endurance data storage products for up to 10 years. Greenliant is also shipping mSATA and SATA M.2 2242 / 2280 ArmourDrive PX Series SSDs using cost-effective industrial 3-bit-per-cell (TLC) 3D NAND. These SSDs support 5K P/E cycles and are available in 64 GB, 128 GB, 256 GB and 512 GB capacities.

YMTC, the Chinese DRAM and NAND flash company that recently announced a 232-layer 3D NAND flash memory that threatened to disrupt entrenched players Samsung, Micron Technology, Kioxia, and SK Hynix, has been blacklisted by the U.S. Department of Commerce, forcing American consumer electronics and PC manufacturers to stop sourcing from the company. Capitalizing on just this, Samsung raised prices of its NAND flash memory chips by as much as 10%, according to a DigiTimes report.

YMTC peaked when Apple struck a NAND flash supply deal with the company in 2020, which would see its storage devices power pretty much every Apple product you can think of, however, under political pressure, Apple withdrew from this deal in 2022. The Department of Commerce contention has been to that YMTC has access to cutting-edge technology, and is backed by Chinese state-capacity, which can help it drive out competitors. All is not well between the U.S. and China geopolitically, either. Samsung's 10% increase in the first half of December 2022 concerns spot-pricing, which could mean its contract pricing (usually used by customers placing very large orders), could be different. It is conceivable that the exit of YMTC from the U.S. market could raise NAND flash product prices across the board.

Global market intelligence firm TrendForce states that Chinese memory manufacturer YMTC is now at risk of exiting the market for 3D NAND Flash products by 2024 following its formal placement on the Entity List of the US Commerce Department on December 15. From this point forward, the Commerce Department will be reviewing and approving individual transactions related to the exportation, re-exportation, and sales of equipment, technologies, and other related goods from the US to YMTC. With acquisitions of equipment parts and technical support from its US partners becoming very difficult and prolonged, YMTC is going to be severely constrained from raising its bit output. Hence, its foothold on the market for 3D NAND Flash products is expected to weaken as time goes by.

TrendForce points out that without the support of the key equipment providers, YMTC is now facing a huge technical obstacle in the development of its latest 3D NAND Flash technology known as Xtacking 3.0. In particular, raising yield rate for the 128L and 232L processes is going to be extremely challenging for the Chinese memory manufacturer. Taking account of this latest escalation in the US-China trade dispute, TrendForce has further corrected down its projections on YMTC's supply bit growth rate and the total NAND Flash supply bit growth rate for next year. YMTC supply bits were initially forecasted to grow by 60% YoY for 2023. However, there was a massive downward correction that put its growth rate at just 18%. Now, YMTC is forecasted to post a YoY decline of 7%, which is a complete reversal from the earlier projections.

YMTC today at the Flash Memory Summit (FMS) 2022 unveiled its X3-9070 TLC 3D NAND flash powered by Xtacking 3.0 architecture. Since its debut show at FMS 2018, YMTC's Xtacking technology has become a hallmark of the company's vision for innovation, and the approach to hybrid bonding has been widely recognized as one of the key enablers of the industry's future growth. Built out to be a common growth platform that drives value and innovation in the semiconductor ecosystem, YMTC's Xtacking 3.0 architecture opens up a world of opportunities for diversified applications in 5G, AloT, and beyond.

From 1.0 to 3.0, YMTC's Xtacking technology, a heterogeneous 3D integration architecture, has established a proven track record of success, as evidenced by a diverse portfolio of Xtacking NAND-based system solutions, including SATA III, PCIe Gen3 & Gen4 SSDs, as well as eMMC & UFS for mobile and embedded applications, garnering recognition from leading OEMs.

Team Group, the global leader in industrial memory modules, launches the brand's first industrial grade PCIe Gen4x4 M.2 2280 SSD, P845-M80. With the adoption of the ultra-fast Gen 4 x4 interface, it delivers an exceptional reading/writing performance for a large data amount. Equipped with BiCS 5 112-layer 3D NAND flash memory, it is a highly cost-competitive solution that accelerates the development of biomedical innovation and digital medicine applications. P845-M80 comes in a maximum capacity of 2 TB and meets the NVMe 2.0 standards. Its bandwidth and data transmission speed are twice that of its predecessor PCIe Gen3, making it even more ideal for the transmission of large amounts of data. Meanwhile, its 3K P/E cycles make it the best memory solution in both performance and durability.

In the wake of the global pandemic, science and digital medicine is rapidly on the rise in innovative biomedical fields. In response to the significant increase in the demand for high-performance image processing and stable storage, Team Group introduces the PCIe Gen 4 x4 industrial grade SSD with the adoption of an 8-channel controller and optional patented graphene and aluminium fin heat dissipation technologies. It effectively reduces the thermal energy generated from high-speed reading and writing and maintains system stability. The patented graphene heat dissipation technology (US invention patent number: US 110,513,92 B2 / Taiwan invention patent number: I703921) features a small volume and agility in application, suitable for machines of smaller sizes. Whereas, the patented aluminium fin heat dissipation technology (Taiwan utility model patent number: M541645) enables maximum heat dissipation and prolongs product service life. Both technologies are novel options for biomedical innovators, offering stability, high speed, and low latency.

YMTC delivered on its roadmaps to achieve a mass-production 232-layer 3D NAND flash memory, beating entrenched players Kioxia, Micron Technology, Samsung Electronics, and SK Hynix, to the production 200+ layer feat. The Chinese memory and NAND flash giant announced this memory back in August 2022 as the YMTC X3-9070, along with its new Xtacking 3.0 architecture—a proprietary method by which the company can reliably stack a large number of NAND flash layers. Micron Technology is ready with a 232-layer 3D NAND flash of its own, although it hasn't hit a production ramp, yet. This is an incredible feat considering that YMTC only got into this business in 2016, compared to the other players that each have over two decades of market presence.

YMTC's ramp to 232-layer closely follows its unexpected 2020 feat of a production-grade 128-layer 3D NAND, which was groundbreaking enough to win a supply contract with Apple, before losing it in October 2022, due to political reasons (not technological reasons). The Xtacking 3.0 architecture involves back side source connect (BSSC) for the memory cell wafer, which leads to simpler process and lower cost compared to Xtacking 2.0 (up to 128-layers, which had introduced nickel silicide (NiSi) instead of tungsten silicide (WSi) for better device performance and I/O speed for CMOS wafer. The original Xtacking architecture from YMTC, which it debuted back in 2016, with layer counts going up to 64-layer, relied on cost-effective wafer-to-wafer bonding. The YMTC 232-layer 3D NAND flash should find plenty of takers in the consumer electronics industry, spanning smartphones, consumer storage devices, TVs, and other appliances. The high layer-count has a direct impact on density, which can help designers lower costs by using fewer chips, or increase capacity.