Corsair announces broad compatibility across its extensive component ranges designed to realize the potential of the Intel Core Ultra series processors. Intel Core Ultra processors feature a new socket, LGA 1851, and Corsair is ready with a full lineup of compatible CPU coolers. All our CPU coolers compatible with the previous LGA1700 socket are compatible with the new LGA 1851 socket, from our A115 air cooler to our best-performance TITAN RX RGB series of AIO coolers. From our 120 mm single fan radiators to our class-leading 360 mm and 420 mm radiators, we have a solution for you no matter which Core Ultra processor you choose or what case you're using.

To unleash the performance of the new Core Ultra series processors, we have a wide range of DOMINATOR and VENGEANCE series DDR5 memory kits available. These cutting-edge kits are designed to deliver award-winning performance, with XMP certification providing easy overclocking and improved memory bandwidth. Whether you're a gamer, content creator, or professional, Corsair DDR5 memory is the premiere option for reliable high-speed DRAM. With speeds up to 8,200 MT/s and densities up to 128 GB per kit, you can choose from attractive and compact VENGEANCE modules to the aesthetically elite DOMINATOR TITANIUM with RGB lighting that can be controlled through our iCUE software.

TrendForce's latest findings reveal that weaker consumer demand has persisted through 3Q24, leaving AI servers as the primary driver of memory demand. This dynamic, combined with HBM production displacing conventional DRAM capacity, has led suppliers to maintain a firm stance on contract price hikes.

Smartphone brands continue to remain cautious despite some server OEMs continuing to show purchasing momentum. Consequently, TrendForce forecasts that Q4 memory prices will see a significant slowdown in growth, with conventional DRAM expected to increase by only 0-5%. However, benefiting from the rising share of HBM, the average price of overall DRAM is projected to rise 8-13%—a marked deceleration compared to the previous quarter.

Today, Micron updated its corporate logo with new symbolism. The redesign comes as Micron celebrates over four decades of technological advancement in the semiconductor industry. The new logo features a distinctive silicon color, paying homage to the wafers at the core of Micron's products. Its curved lettering represents the company's ability to stay ahead of industry trends and adapt to rapid technological changes. The design also incorporates vibrant gradient colors inspired by light reflections on wafers, which are the core of Mircorn's memory and storage products.

This rebranding effort coincides with Micron's expanding role in AI, where memory and storage innovations are increasingly crucial. The company has positioned itself beyond a commodity memory supplier, now offering leadership in solutions for AI data centers, high-performance computing, and AI-enabled devices. The company has come far from its original 64K DRAM in 1981 to HBM3E DRAM today. Micron offers different HBM memory products, graphics memory powering consumer GPUs, CXL memory modules, and DRAM components and modules.

Samsung Electronics is speeding up its work on 2 nm production facilities, industry sources say. The company has started to install advanced equipment at its "S3" foundry line in Hwaseong to set up a 2 nm production line. This line aims to produce 7,000 wafers each month by the first quarter of next year. Also, Samsung plans to create a 1.4 nm production line at its "S5" foundry in Pyeongtaek Plant 2 by the second quarter of next year. This line has a goal to make 2,000 to 3,000 wafers each month. By the end of next year, Samsung will change all the remaining 3 nm production lines at "S3" to 2 nm.

As we reported earlier, Samsung has pushed back the start date for its Tyler, Texas foundry. The plant set to open by late 2024, won't install equipment until after 2026. Also, Samsung has changed its plans for the Pyeongtaek Fab 4 foundry line. Because of lower demand, it will now make DRAM instead, moreover, at Pyeongtaek Fab 3, which has a 4 nm line, Samsung has cut back production. These changes are part of Samsung's plan to make 2 nm chips next year and 1.4 nm chips by 2027. The company wants to catch up with its rival TSMC, right now, Samsung has 11.5% of the global foundry market in Q2, while TSMC leads with 62.3%. An industry expert stressed how crucial this is saying, "With the delay in 3 nm Exynos production and other issues, getting the 2 nm process right could make or break Samsung Foundry". The struggle for Samsung is real, with the company's top management, led by DS Division Vice Chairman Jeon Young-hyun, having recently issued a public apology for the division's underwhelming performance.

Apacer is thrilled to unveil its latest advancements in data security, reliability, and integrity for casino gaming systems in the Global Gaming Expo at the Expo Hall, taking place from October 8th to 10th, 2024. We invite you to visit us at booth 5221 to explore our state-of-the-art SSD and DRAM solutions, meticulously designed to address the demanding needs of the gaming industry.

At G2E 2024, Apacer will highlight a range of innovative products tailored to the unique requirements of gaming applications:

Recent reports from South China Morning Post unveil developments in China's semiconductor industry, with significant progress in two critical areas: advanced memory chips and silicon photonics. These breakthroughs mark important steps in the country's pursuit of technological self-reliance amid global trade tensions. In Wuhan, a startup called Numemory has unveiled a new storage-class memory (SCM) chip. The "NM101" chip boasts an impressive 64 GB capacity, far surpassing the megabyte-range offerings currently dominating the market. This novel chip blends the strengths of traditional DRAM and NAND flash storage, delivering rapid, non-volatile, persistent memory ideal for server and data center applications. The NM101's design prioritizes high capacity, density, and bandwidth while maintaining low latency. These characteristics make it particularly well-suited for data centers and cloud computing infrastructures. Initial reports suggest that storage devices incorporating this SCM technology can write an entire 10 GB high-definition video file in a mere second.

Concurrently, another Wuhan-based institution, JFS Laboratory, has achieved a milestone in silicon photonics research. The state-backed facility successfully merged a laser light source with a silicon chip, a feat previously unrealized in China. This innovation in silicon photonics leverages light signals for data transmission, potentially circumventing the looming physical constraints of traditional electric signal-based chip designs. This accomplishment is viewed as addressing a crucial gap in China's optoelectronics capabilities, which used to lag behind Western chip designers and startups. Using silicon photonics, infrastructure scale-out can be sustained on a much larger scale without significant power consumption increase. While these developments represent significant progress, it's important to note that bridging the gap between laboratory breakthroughs and mass-produced, commercially viable products remains a substantial challenge. The path from research success to market dominance is often long and complex, requiring sustained investment and further technological refinement.

Micron Technology, Inc. today announced results for its fourth quarter and full year of fiscal 2024, which ended August 29, 2024.

Fiscal Q4 2024 highlights

• Revenue of $7.75 billion versus $6.81 billion for the prior quarter and $4.01 billion for the same period last year
• GAAP net income of $887 million, or $0.79 per diluted share
• Non-GAAP net income of $1.34 billion, or $1.18 per diluted share
• Operating cash flow of $3.41 billion versus $2.48 billion for the prior quarter and $249 million for the same period last year

Fiscal 2024 highlights

• Revenue of $25.11 billion versus $15.54 billion for the prior year
• GAAP net income of $778 million, or $0.70 per diluted share
• Non-GAAP net income of $1.47 billion, or $1.30 per diluted share
• Operating cash flow of $8.51 billion versus $1.56 billion for the prior year

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced it has begun mass producing PM9E1, a PCle 5.0 SSD with the industry's highest performance and largest capacity. Built on its in-house 5-nanometer (nm)-based controller and eighth-generation V-NAND (V8) technology, the PM9E1 will provide powerful performance and enhanced power efficiency, making it an optimal solution for on-device AI PCs. Key attributes in SSDs, including performance, storage capacity, power efficiency and security, have all been improved compared to its predecessor (PM9A1a).

"Our PM9E1 integrated with a 5 nm controller delivers industry-leading power efficiency and utmost performance validated by our key partners," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "In the rapidly growing on-device AI era, Samsung's PM9E1 will offer a robust foundation for global customers to effectively plan their AI portfolios."

Asgard joined the ranks of V-Color to unveil its first high-frequency DDR5 memory, the Thor DDR5-9600. V-Color recently launched its DDR5-9200 memory, and Asgard one-upped it with DDR5-9600. Both these are CUDIMMs—UDIMMs that feature a client clock driver (CKD) component. These modules feature the highest bins of DDR5-9600 chips from SK Hynix. The advertised speed of DDR5-9600 is achieved using timings of 44-56-56-136, and a scorching DRAM voltage of 1.50 V. The module includes an XMP 3.0 profile to enable these settings on an Intel platform. With a single-rank configuration and 24 GB module density, the dual-channel kit gives you 48 GB. Asgard revealed that it is working on a DDR5-10000 kit. The company didn't announce US availability.

SK hynix unveiled an enhanced Accelerator-in-Memory based Accelerator (AiMX) card at the AI Hardware & Edge AI Summit 2024 held September 9-12 in San Jose, California. Organized annually by Kisaco Research, the summit brings together representatives from the AI and machine learning ecosystem to share industry breakthroughs and developments. This year's event focused on exploring cost and energy efficiency across the entire technology stack. Marking its fourth appearance at the summit, SK hynix highlighted how its AiM products can boost AI performance across data centers and edge devices.

Booth Highlights: Meet the Upgraded AiMX
In the AI era, high-performance memory products are vital for the smooth operation of LLMs. However, as these LLMs are trained on increasingly larger datasets and continue to expand, there is a growing need for more efficient solutions. SK hynix addresses this demand with its PIM product AiMX, an AI accelerator card that combines multiple GDDR6-AiMs to provide high bandwidth and outstanding energy efficiency. At the AI Hardware & Edge AI Summit 2024, SK hynix presented its updated 32 GB AiMX prototype which offers double the capacity of the original card featured at last year's event. To highlight the new AiMX's advanced processing capabilities in a multi-batch environment, SK hynix held a demonstration of the prototype card with the Llama 3 70B model, an open source LLM. In particular, the demonstration underlined AiMX's ability to serve as a highly effective attention accelerator in data centers.

SK hynix Inc. announced today that it has developed PEB110 E1.S (PEB110), a high-performance solid-state drive (SSD) for data centers. With the advent of the AI era, customer demand for high-performance NAND solutions such as SSDs for data centers, as well as ultra-fast DRAM chips including high bandwidth memory (HBM), is growing. In line with this trend, the company has developed and introduced a new product with improved data processing speed and power efficiency by applying the fifth-generation (Gen 5) PCIe specifications.

SK hynix expects to meet diverse customer needs with a more robust SSD portfolio following successful mass production of PS1010 with the introduction of PEB110. The company is currently in the qualification process with a global data center customer and plans to begin mass production of the product in the second quarter of next year, pending qualification. PCle Gen 5, applied to the new product, provides twice the bandwidth of the fourth generation (Gen 4), enabling PEB110 to achieve data transfer rates of up to 32 gigatransfers per second (GT/s). This enables PEB110 to double the performance of the previous generation and improve power efficiency by more than 30%.

As AI workloads continue to evolve and expand, memory bandwidth and capacity are increasingly critical for system performance. The latest GPUs in the industry need the highest performance high bandwidth memory (HBM), significant memory capacity, as well as improved power efficiency. Micron is at the forefront of memory innovation to meet these needs and is now shipping production-capable HBM3E 12-high to key industry partners for qualification across the AI ecosystem.

Micron's industry-leading HBM3E 12-high 36 GB delivers significantly lower power consumption than our competitors' 8-high 24 GB offerings, despite having 50% more DRAM capacity in the package
Micron HBM3E 12-high boasts an impressive 36 GB capacity, a 50% increase over current HBM3E 8-high offerings, allowing larger AI models like Llama 2 with 70 billion parameters to run on a single processor. This capacity increase allows faster time to insight by avoiding CPU offload and GPU-GPU communication delays. Micron HBM3E 12-high 36 GB delivers significantly lower power consumption than the competitors' HBM3E 8-high 24 GB solutions. Micron HBM3E 12-high 36 GB offers more than 1.2 terabytes per second (TB/s) of memory bandwidth at a pin speed greater than 9.2 gigabits per second (Gb/s). These combined advantages of Micron HBM3E offer maximum throughput with the lowest power consumption can ensure optimal outcomes for power-hungry data centers. Additionally, Micron HBM3E 12-high incorporates fully programmable MBIST that can run system representative traffic at full spec speed, providing improved test coverage for expedited validation and enabling faster time to market and enhancing system reliability.

TrendForce reports that memory module makers have been aggressively increasing their DRAM inventories since 3Q23, with inventory levels rising to 11-17 weeks by 2Q24. However, demand for consumer electronics has not rebounded as expected. For instance, smartphone inventories in China have reached excessive levels, and notebook purchases have been delayed as consumers await new AI-powered PCs, leading to continued market contraction.

This has led to a weakening in spot prices for memory products primarily used in consumer electronics, with Q2 prices dropping over 30% compared to Q1. Although spot prices remained disconnected from contract prices through August, this divergence may signal potential future trends for contract pricing.

SK hynix announced today that it has developed the industry's first 16 Gb DDR5 built using its 1c node, the sixth generation of the 10 nm process. The success marks the beginning of the extreme scaling to the level closer to 10 nm in the memory process technology. The degree of difficulty to advance the shrinking process of the 10 nm-range DRAM technology has grown over generations, but SK hynix has become the first in the industry to overcome the technological limitations by raising the level of completion in design, thanks to its industry-leading technology of the 1b, the fifth generation of the 10 nm process.

SK hynix said it will be ready for mass production of the 1c DDR5 within the year to start volume shipment next year. In order to reduce potential errors stemming from the procedure of advancing the process and transfer the advantage of the 1b, which is widely applauded for its best performing DRAM, in the most efficient way, the company extended the platform of the 1b DRAM for development of 1c. The new product comes with an improvement in cost competitiveness, compared with the previous generation, by adopting a new material in certain process of the extreme ultraviolet, or EUV, while optimizing the EUV application process of total. SK hynix also enhanced productivity by more than 30% through technological innovation in design.

Micron has been on a spending spree in Taiwan, where the company has been looking for new facilities. Micron has agreed to buy no less than three LCD plants from display maker AUO, which are located in the central Taiwanese city of Taichung. Micron is looking at paying NT$ 8.1 billion (~US$253.3 million). Initially, Micron was interested in buying another plant in Tainan from Innolux, but was turned down, so Micron turned to AUO for the purchases. Earlier this year, TSMC spent NT$17 billion (~US$531.6 million) to buy a similar facility from Innolux, but it seems that Innolux wasn't willing to part with any more facilities this year.

The three AUO plants are said to have produced LCD colour filters and the two of the plants had closed for production earlier this month. However, it appears that for some reason, the plant that is still in operation, will be leased by AUO and the company will continue production of colour filters in the factory. The larger plant measures 146,033 square metres, with the smaller measuring 32,500 square metres. As for Micron's plans, not much is known at this point in time, but the company has announced that it's planning on using at least some of the space for front-end wafer testing and that the new plants will support its current and upcoming DRAM production fabs in Taichung and Taoyuan, which the company is currently expanding. Market sources in Taiwan are quoted as saying that the focus will be on HBM memory, due to the high demand from various AI products in the market, least not from NVIDIA. The deal is expected to be finalised by the end of the year.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of the JESD406-5 LPDDR5/5X Serial Presence Detect (SPD) Contents V1.0, consistent with the updated contents of JESD401-5B DDR5 DIMM Label and JESD318 DDR5/LPDDR5 Compression Attached Memory Module (CAMM2) Common Standard.

JESD406-5 documents the contents of the SPD non-volatile configuration device included on all JEDEC standard memory modules using LPDDR5/5X SDRAMs, including the CAMM2 standard designs outlined in JESD318. The JESD401-5B standard defines the content of standard memory module labels using the other two standards, assisting end users in selecting compatible modules for their applications.

Samsung Electronics is set to make a significant leap in semiconductor manufacturing technology with the introduction of its first High-NA 0.55 EUV lithography tool. The company plans to install the ASML Twinscan EXE:5000 system at its Hwaseong campus between Q4 2024 and Q1 2025, marking a crucial step in developing next-generation process technologies for logic and DRAM production. This move positions Samsung about a year behind Intel but ahead of rivals TSMC and SK Hynix in adopting High-NA EUV technology. The system is expected to be operational by mid-2025, primarily for research and development purposes. Samsung is not just focusing on the lithography equipment itself but is building a comprehensive ecosystem around High-NA EUV technology.

The company is collaborating with several key partners like Lasertec (developing inspection equipment for High-NA photomasks), JSR (working on advanced photoresists), Tokyo Electron (enhancing etching machines), and Synopsys (shifting to curvilinear patterns on photomasks for improved circuit precision). The High-NA EUV technology promises significant advancements in chip manufacturing. With an 8 nm resolution capability, it could make transistors about 1.7 times smaller and increase transistor density by nearly three times compared to current Low-NA EUV systems. However, the transition to High-NA EUV comes with challenges. The tools are more expensive, costing up to $380 million each, and have a smaller imaging field. Their larger size also requires chipmakers to reconsider fab layouts. Despite these hurdles, Samsung aims for commercial implementation of High-NA EUV by 2027.

Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents patterned structures obtained after exposure with the 0.55NA EUV scanner in the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands. Random logic structures down to 9,5 nm (19 nm pitch), random vias with 30 nm center-to-center distance, 2D features at 22 nm pitch, and a DRAM specific lay out at P32nm were printed after single exposure, using materials and baseline processes that were optimized for High NA EUV by imec and its partners in the framework of imec's Advanced Patterning Program. With these results, imec confirms the readiness of the ecosystem to enable single exposure high-resolution High NA EUV Lithography.

Following the recent opening of the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands, customers now have access to the (TWINSCAN EXE:5000) High NA EUV scanner to develop private High NA EUV use cases leveraging the customer's own design rules and lay outs.

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass production for the industry's thinnest 12 nanometer (nm)-class, 12-gigabyte (GB) and 16 GB LPDDR5X DRAM packages, solidifying its leadership in the low-power DRAM market. Leveraging its extensive expertise in chip packaging, Samsung is able to deliver ultra-slim LPDDR5X DRAM packages that can create additional space within mobile devices, facilitating better airflow. This supports easier thermal control, a factor that is becoming increasingly critical especially for high-performance applications with advanced features such as on-device AI.

"Samsung's LPDDR5X DRAM sets a new standard for high-performance on-device AI solutions, offering not only superior LPDDR performance but also advanced thermal management in an ultra-compact package," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "We are committed to continuous innovation through close collaboration with our customers, delivering solutions that meet the future needs of the low-power DRAM market."

addlink Technology Co., Ltd., a global leader in high-performance storage solutions, proudly announces the launch of its groundbreaking new SSDs designed specifically for NAS storage systems: the NAS D60 and D20 SSDs. These cutting-edge SSDs are poised to set new standards in speed, reliability, and capacity, transforming the NAS storage landscape.

addlink's NAS D60 and D20 SSDs exemplify the company's dedication to innovation and quality. These products are meticulously designed to meet the rigorous demands of modern NAS users, providing reliable, high-performance storage solutions that enhance productivity and data management. Whether for home use or enterprise-level applications, the NAS D60 and D20 offer unmatched performance, endurance, and value.

Samsung Electronics today reported financial results for the second quarter ended June 30, 2024. The Company posted KRW 74.07 trillion in consolidated revenue and operating profit of KRW 10.44 trillion as favorable memory market conditions drove higher average sales price (ASP), while robust sales of OLED panels also contributed to the results.

Memory Market Continues To Recover; Solid Second Half Outlook Centered on Server Demand
The DS Division posted KRW 28.56 trillion in consolidated revenue and KRW 6.45 trillion in operating profit for the second quarter. Driven by strong demand for HBM as well as conventional DRAM and server SSDs, the memory market as a whole continued its recovery. This increased demand is a result of the continued AI investments by cloud service providers and growing demand for AI from businesses for their on-premise servers.

Marvell Technology, Inc., a leader in data infrastructure semiconductor solutions, today launched the Marvell Structera product line of Compute Express Link (CXL) devices that enable cloud data center operators to overcome memory performance and scaling challenges in general-purpose servers.

To address memory-intensive applications, data center operators add extra servers to get higher memory bandwidth and higher memory capacity. The compute capabilities from the added processors are typically not utilized for these applications, making the servers inefficient from cost and power perspectives. The CXL industry standard addresses this challenge by enabling new architectures that can efficiently add memory to general-purpose servers.

Micron Technology, Inc., today announced availability of the Micron 9550 NVMe SSD - the world's fastest data center SSD and industry leader in AI workload performance and power efficiency. The Micron 9550 SSD showcases Micron's deep expertise and innovation by integrating its own controller, NAND, DRAM and firmware into one world-class product. This integrated solution enables class-leading performance, power efficiency and security features for data center operators.

The Micron 9550 SSD delivers best-in-class performance with 14.0 GB/s sequential reads and 10.0 GB/s sequential writes to provide up to 67% better performance over similar competitive SSDs and enables industry-leading performance for demanding workloads such as AI. In addition, its random reads of 3,300 KIOPS are up to 35% better and random writes of 400 KIOPS are up to 33% better than competitive offerings.

TrendForce's latest report on the memory industry reveals that DRAM and NAND Flash revenues are expected to see significant increases of 75% and 77%, respectively, in 2024, driven by increased bit demand, an improved supply-demand structure, and the rise of high-value products like HBM.

Furthermore, industry revenues are projected to continue growing in 2025, with DRAM expected to increase by 51% and NAND Flash by 29%, reaching record highs. This growth is anticipated to revive capital expenditures and boost demand for upstream raw materials, although it will also increase cost pressure for memory buyers.

Micron Technology, Inc., today announced it is now sampling its multiplexed rank dual inline memory module (MRDIMMs). The MRDIMMs will enable Micron customers to run increasingly demanding workloads and obtain maximum value out of their compute infrastructure. For applications requiring more than 128 GB of memory per DIMM slot, Micron MRDIMMs outperform current TSV RDIMMs by enabling the highest bandwidth, largest capacity with the lowest latency and improved performance per watt to accelerate memory-intensive virtualized multi-tenant, HPC and AI data center workloads.1 The new memory offering is the first generation in the Micron MRDIMM family and will be compatible with Intel Xeon 6 processors.

"Micron's latest innovative main memory solution, MRDIMM, delivers the much-needed bandwidth and capacity at lower latency to scale AI inference and HPC applications on next-generation server platforms," said Praveen Vaidyanathan, vice president and general manager of Micron's Compute Products Group. "MRDIMMs significantly lower the amount of energy used per task while offering the same reliability, availability and serviceability capabilities and interface as RDIMMs, thus providing customers a flexible solution that scales performance. Micron's close industry collaborations ensure seamless integration into existing server infrastructures and smooth transitions to future compute platforms."