News Posts matching #DRAM

Return to Keyword Browsing

SK hynix Starts Mass-Production of HBM2E High-Speed DRAM

SK hynix announced that it has started the full-scale mass-production of high-speed DRAM, 'HBM2E', only ten months after the Company announced the development of the new product in August last year. SK hynix's HBM2E supports over 460 GB (Gigabyte) per second with 1,024 I/Os (Inputs/Outputs) based on the 3.6 Gbps (gigabits-per-second) speed performance per pin. It is the fastest DRAM solution in the industry, being able to transmit 124 FHD (full-HD) movies (3.7 GB each) per second. The density is 16 GB by vertically stacking eight 16 Gb chips through TSV (Through Silicon Via) technology, and it is more than doubled from the previous generation (HBM2).

HBM2E boasts high-speed, high-capacity, and low-power characteristics; it is an optimal memory solution for the next-generation AI (Artificial Intelligence) systems including Deep Learning Accelerator and High-Performance Computing, which all require high-level computing performance. Furthermore, it is expected to be applied to the Exascale supercomputer - a high-performance computing system which can perform calculations a quintillion times per second - that will lead the research of next-generation basic and applied science, such as climate changes, bio-medics, and space exploration.

Micron Technology Reports Results for the Third Quarter of Fiscal 2020

Micron Technology, Inc. (Nasdaq: MU) today announced results for its third quarter of fiscal 2020, which ended May 28, 2020. "Micron's exceptional execution in the fiscal third quarter drove strong sequential revenue and EPS growth, despite challenges in the macro environment," said Micron Technology President and CEO Sanjay Mehrotra. "We are ramping the industry's most advanced DRAM technology into production and have delivered more than 75% of our NAND volume as high-value solutions, supported by record SSD revenue in the quarter. Our portfolio momentum positions us exceedingly well to leverage the long-term growth across our end markets."

Taiwan Court Strikes UMC and Fomer Micron Employees for Stealing Micron Trade Secrets

The Taichung District Court in Taiwan ruled in favor of Micron Technology in a case dating back to 2017, against semiconductor foundry UMC and two of its former employees. Micron had alleged that UMC and three of Micron former employees stole Micron's trade secrets and conveyed them to Mainland Chinese DRAM maker Fujian Jinhua IC. One of the accused include Stephen Chen, former president for Micron Memory in Taiwan.

The Court ruled that the three former Micron employees serve 4.5-6.5 years in prison, in addition to paying NTD 4-6 million fines, each. As for UMC, it has been ordered to pay NTD 100 million (USD $3.4 million) in damages to Micron Technology, a parking ticket value compared to the commercial damage FJIC will inflict to Micron in the years to come.

Semiconductor Fabs to Log Record Spending of Nearly $68 Billion in 2021, SEMI Reports

2021 is poised to mark a banner year for global fab equipment spending with 24 percent growth to a record US$67.7 billion, 10 percent higher than the previously forecast US$65.7 billion, and all product segments promising solid growth rates, according to the second-quarter 2020 update of the SEMI World Fab Forecast report. Memory fabs will lead worldwide semiconductor segments with US$30 billion in equipment spending, while leading-edge logic and foundry is expected to rank second with US$29 billion in investments.

The 3D NAND memory subsegment will help power the spending spree with a 30 percent jump in investments this year before tacking on 17 percent growth in 2021. DRAM fab investments will surge 50 percent next year after declining 11 percent in 2020, and fab spending on logic and foundry, mainly leading edge, will trace a similar but more muted trajectory, rising 16 percent 2021 after an 11 percent drop this year.

Patriot Viper Gaming Announces 32GB VIPER STEEL SODIMMs and UDIMMs

VIPER GAMING by PATRIOT, a trademarked brand of PATRIOT and a global leader in performance memory, solid-state drives, and flash storage solutions, is excited to announce the launch of their new 32 GB memory modules into the VIPER STEEL SERIES DDR4 PERFORMANCE MEMORY. The new 32 GB modules are available in both UDIMM and SODIMM. The frequencies from 3000 MHz to 3600 MHz are available for UDIMM and the frequencies from 2400 MHz to 3000 MHz for SODIMM. The new modules are built from rigorously tested memory chips and components on a ten-layer PCB for optimum performance in gaming desktops and laptops.

The VIPER STEEL provides extra gaming performance and stability for the most demanding desktop and laptop environments across the latest Intel and AMD platforms. The VIPER STEEL modules bring Intel XMP 2.0 performance to the next level by offering hardcore gamers and enthusiasts the possibility to upgrade their gaming systems with more DRAM memory capacity and further extending their potential.

UniIC Delivers China's First 100% Homebrew DDR4 Memory Modules

Xi'an UniIC Semiconductors, which goes by the trade name UniIC (probably pronounced "unique"), has delivered the first DDR4 memory module made 100% in China (which includes all its DRAM chips, PCB, drivers, and other components). The module may be nothing much to look at, with just a bare green PCB and DRAM chips, lacking in any heatspreaders; but this product can be considered a baby step toward a large and diverse product lineup. The debutante memory modules are unbuffered DDR4-2400 and DDR4-2667 memory modules that come in 8 GB densities.

The DDR4-2400 module is timed at CL17 17-17-39, and the DDR4-2667 at CL18, with both pulling 1.2 V - again nothing to write home about, but given the breakneck speeds at which Chinese companies flush with state investment are developing and diversifying their PC hardware lines, UniIC's product portfolio could look very different in the coming two years. UniIC is a cog in China's 3-5-2 policy of localizing PC hardware manufacturing, and eliminating dependence of foreign hardware.

GELID Unveils the Lumen RAM Heatsinks with RGB Lighting

GELID Lumen offers an easy way of adding RGB into your PC. It features the double-side vest heatsink to enhance DRAM cooling and the RGB module with a standard 3-Pin Fan connector that can be attached to any motherboard. The RGB functions are fully automatic and don't require external hardware or software to set lighting modes.

Made of high-grade components, Lumen supports all types and form-factors of DDR2/DDR3/DDR4 RAM modules designed for desktops. It ensures fast installation and perfectly fits high-performance DRAM to boost overclocking capabilities and energize your gaming rig with spectacular RGB lighting.

Kingston Ships 7.68TB Capacity for Industry-Leading High-Performance Data Center SSDs

Kingston Digital, Inc., the Flash memory affiliate of Kingston Technology Company, Inc., a world leader in memory products and technology solutions, today began shipping the 7.68 TB model of the Data Center 500R (DC500R) and 450R (DC450R) SATA SSDs. The DC1000M 7.68 TB U.2 NVMe ships in June. The SSDs provide additional storage and implement strict QoS ensuring predictable IO and low latency for data centers using both NVMe and/or SATA.

The three SSDs join the DC1000B NVMe boot drive, DC500M (for mixed workloads) SATA SSD and Server Premier DRAM to form the most complete range of superior enterprise-class data center storage solutions in the market. "Higher capacity options for data centers enables organizations to increase storage space in their current footprint as Cloud computing continues to grow at unprecedented levels," said Tony Hollingsbee, SSD business manager, Kingston EMEA. "Our evolving line of data center storage solutions serve enterprise customers of all levels from hyperscalers on down and are a key component for organizations to keep the total cost of ownership down."

NAND Flash Revenue Undergoes 8.3% QoQ Growth in 1Q20 in Light of Surging Demand from Data Centers, Says TrendForce

According to the latest investigations by the DRAMeXchange research division of TrendForce, NAND Flash bit shipment in 1Q20 was relatively on par with 4Q19. The overall ASP of NAND Flash products also climbed during the period. As a result, the global NAND Flash revenue for the quarter went up by 8.3% QoQ to US$13.6 billion.

In 1Q20, demand for enterprise SSDs exceeded supply because cloud service providers' procurement for data centers had been growing progressively since 4Q19. Also, inventories of NAND Flash suppliers mostly returned to normal during the period. Consequently, most NAND Flash products for the major applications experienced a rise in contract prices. As for the impact of COVID-19 during the Lunar New Year, TrendForce's investigations at the time found that the server supply chain managed to make a better recovery than the supply chains for notebook computers and smartphones. The impact of the outbreak on the storage demand from the cloud services sector was thus quite limited. On the other hand, the production of notebooks and smartphones was affected by logistical problems and breakage in the component supply chain. Because of this, notebook and smartphone manufacturers have gradually resumed production since March.

GIGABYTE Introduces AORUS RGB Memory DDR4-4400MHz 16GB

GIGABYTE TECHNOLOGY Co. Ltd, a leading manufacturer of motherboards and graphics cards, announced today the launch of AORUS RGB MEMORY 4400 MHz. The all new design memory kit features the highly-praised Hynix D die, providing high bandwidth and high performance of DDR4 XMP 4400 MHz under 8 GB x2 mainstream specifications with a friendly price tag. The AORUS RGB MEMORY 4400 MHz is qualified by the high-end platform of INTEL Z490 and AMD X570, offering distinguished quality and stability with a lifetime warranty. Through RGB 2.0 support, users can create personal stylish lighting among DRAM and system components with balance of performance, budget, and fashion.

Following the innovation of computer platforms, the support of high memory XMP increases as well. GIGABYTE AORUS RGB MEMORY has won most credits consistently from the industry, and brings extra to the plate with the latest AORUS RGB MEMORY 4400 MHz 16 GB, with the specification of 8 GB x2 DDR4 XMP 4400 MHz and 19-26-26-46 timing. AORUS RGB MEMORY 4400 MHz 16 GB adopts Hynix D die which is the latest optimized option that memory overclockers highly recommend, and chose this level of product when purchasing. GIGABYTE implements this high quality material on AORUS RGB MEMORY 4400 MHz memory for overclockers who chase high memory frequency and enthusiasts can take full advantage of the various performance boosts.

Micron Increasing Production Capability of DDR4 DRAM in 1z nm Nodes

A report via DigiTimes, citing "sources familiar with the matter", claims that Micron is ramping up production of its 1z nm nodes for DDR4 manufacturing. As the latest fabrication technology available for the DDR market, 1z nm refers to silicon manufacturing in the 12-14 nm ranges, which is the currently densest available process in the high volume manufacturing space. Micron's other fabrication technology, 1y nm (referring to manufacturing in the 14 - 16 nm range), is also seeing increased manufacturing orders as market requirements for DDR volume are only bound to increase in the foreseeable future.

Micron's ramp-up of 1z nm makes sense, as DDR4 will continue to make-up the overwhelming majority of memory needs for the market until DDR5 fully comes online - and even then, volume requirements will take a while to achieve anything that's compared to today's flow of DDR4. Micron is likely banking on increased experience on the 1z nm nodes to launch its early DDR5 products, which will exclusively use that manufacturing technology. Manufacturing increases are being reported to be mostly related to 16 Gb DRAM modules (for the desktop and laptop spaces).

Micron's Low-Power DDR5 DRAM Boosts Performance and Consumer Experience of Motorola's New Flagship Edge+ Smartphone

Micron Technology, Inc., together with Motorola, today announced integration of Micron's low-power DDR5 (LPDDR5) DRAM into Motorola's new motorola edge+ smartphone, bringing the full potential of the 5G experience to consumers. Micron and Motorola worked in close collaboration to enable the edge+ to reach 5G network speeds that require maximum processing power coupled with high bandwidth memory and storage.

With 12 gigabytes (GB) of industry-leading Micron LPDDR5 DRAM memory, motorola edge+ delivers a smooth, lag-free consumer experience. The new phone takes advantage of the faster data speeds and lower latency of 5G to increase the performance of cloud-based applications such as gaming and streaming entertainment.
Motorola Edge+

ADATA Unveils Industrial-Grade microSD and SD Cards with SLC Caching

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces the launch of three industrial-grade microSD cards, the ADATA ISDD33K and IUDD33K, that offer the reliability, durability, and performance required for industrial applications.

The ADATA ISDD33K industrial-grade SD card implements 3D TLC Flash, sports a 3K P/E cycle rating, and read and write speeds of up to 95/70 MB per second. The ISDD33K is highly reliable and compatible as well as power efficient, and is ideally suited for applications such as medical devices, surveillance systems, point of sale systems. The ADATA IUDD33K industrial-grade A1 (Application Performance Class 1) microSD card implements 3D TLC Flash, sports a 3K P/E cycle rating, and read and write speeds of up to 95/70 MB per second. The IUDD33K is ideally suited for applications such as industrial automation, surveillance systems, and point of sale systems. Both the IUDD33K and ISDD33K support S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology), which can indicate imminent failures, and E2E (End-to-End) Data Protection.
ADATA ISDD33K

Crucial Unveils the P5 High-Performance M.2 NVMe SSDs

Crucial is expanding its P-series M.2 NVMe SSD lineup with the introduction of the P5. Available in capacities of 250 GB, 500 GB, 1 TB, and 2 TB, and built in the M.2-2280 form-factor, the drives are still based on PCI-Express gen 3.0 x4 host interface with NVMe 1.3. The P5 implements a DRAM-cache cushioned controller, and 3D TLC NAND flash memory.

Performance on offer includes sequential read speeds of up to 3,400 MB/s, and sequential write speeds of up to 3,000 MB/s (up to 1,400 MB/s writes for the 250 GB model), while Crucial rates endurance (TBW) at 150 TBW for the 250 GB model, 300 TBW for the 500 GB model, 600 TBW for 1 TB, and 1.2 PBW for the 2 TB model. The performance numbers are a class above the P2 or P1 mid-range drives. The drives are backed by 5-year warranties. The company didn't reveal pricing.
Crucial P5 Crucial P5 Crucial P5 Crucial P5
Many Thanks to TheLostSwede for the tip.

ADATA Announces XPG SPECTRIX D50 DDR4 RGB 32GB Memory Module

ADATA, a leading manufacturer of high-performance DRAM modules, NAND Flash products, gaming products, and mobile accessories,today announces the launch of the XPG SPECTRIX D50 DDR4 RGB memory module. Reaching performance of up to 4800 MHz, sporting a maximum capacity of 32 GB, and featuring an elegant geometric design, the XPG SPECTRIX D50 offers immense performance and minimalist styling gamers, overclockers, and PC enthusiasts will appreciate.

Made with only the highest quality chips and PCBs, the XPG D50 provides ultimate stability, reliability, and speeds of up to 4800 MHz. What's more, it supports the latest Intel and AMD platforms. To ensure all that amazing performance inside is protected from impact, the XPG D50 sports a robust heatsink with a wall thickness of nearly 2 mm for excellent durability. The D50 support Intel XMP 2.0 for hassle-free and stable overclocking without the need to go into BIOS.

ADATA Launches Industrial-Grade DDR4-3200 32GB Memory Modules

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories is pleased to announce the launch of its industrial-grade 32 GB DDR4-3200 memory modules. With tested transfer rates of up to 3200 MT/s and 32 GB of capacity, the modules are ideal for segments and applications experiencing continuous growth of temporarily stored data as a result of 5G network and AIoT deployment, and thus require higher capacity and performance. These segments and applications include telecommunications, surveillance systems, autonomous vehicles, medical equipment, and industrial robots among others.

The modules come in U-DIMM, SO-DIMM, R-DIMM, ECC-DIMM, and ECC SO-DIMM variants and are compatible with the latest 3rd Gen AMD Ryzen and 10th Gen Intel Core processors. Made with the latest advancements in soldering and manufacturing. Utilizing a 288-pin design, operating voltage has been reduced from 1.5 V on DDR3 to 1.2 V, which not only helps save power by 20%, but also boosts transfer bandwidth speed.

Gartner Forecasts Worldwide Semiconductor Revenue to Decline 0.9% in 2020 Due to Coronavirus Impact

Due to the impact of the coronavirus on semiconductor supply and demand, worldwide semiconductor revenue is forecast to decline 0.9% in 2020, according to Gartner, Inc. This is down from the previous quarter's forecast of 12.5% growth.

"The wide spread of COVID-19 across the world and the resulting strong actions by governments to contain the spread will have a far more severe impact on demand than initially predicted," said Richard Gordon, research practice vice president at Gartner. "This year's forecast could have been worse, but growth in memory could prevent a steep decline."
Gartner WorldWide Semiconductor Revenue Forcast

Crucial P2 Announced: Company's Second QLC M.2 NVMe Client SSD

Here's the first picture of the Crucial P2, the company's second M.2 NVMe client SSD series based on QLC NAND flash memory, and successor to the Crucial P1. The drive sticks to PCI-Express gen 3.0 x4 as its host interface, but increases sequential read speeds over the P1. Available in 250 GB and 500 GB models to begin with, the P2 offers sequential transfer rates of up to 2100 MB/s reads with up to 1150 MB/s writes for the 250 GB variant; and up to 2300 MB/s reads with up to 940 MB/s writes on the 500 GB variant. There's no word on whether the P2 uses the same QLC NAND chips as the P1, but we do spy a DRAM cache chip. Endurance of the P2 is rated at 150 TBW, and Crucial is backing them with 5-year warranties when they come out in the near future. Pricing in Europe is expected to be about 59€ for the 250 GB model, and 70€ for the 500 GB one.

Update 15:54 UTC: Crucial launched the drive Stateside at $54.99 for the 250 GB model, and $64.99 for the 500 GB model. We've added more images.

GIGABYTE Launches GeForce GTX 1650 GPU with GDDR6 Memory

NVIDIA has enabled its AIB partners to design a to ship a GeForce GTX 1650 GPU with a twist - a GDDR6 DRAM instead of the regular GDDR5 DRAM. And GIGABYTE is the first to update its GPU offerings. Today, GIGABYTE has launched... exactly all the models it had it already offered? Both of the models, like the GIGABYTE GTX 1650 OC and GTX 1650 Windforce OC, are carrying the same name again, just with a newer memory. The only difference is the box it ships in, which you can see below, that shows a GDDR6 marking and the GPU has a bit different cooler shroud. The amount of memory is still static, remaining at 4 GB, while the speed is now bumped to 12 Gbps. Base clocks of the GTX 1650 OC models are unknown, while the boost is 1635 MHz. For GTX 1650 Windforce OC model, base clock is still unknown, while the boost is 1710 MHz.
GIGABYTE GeForce GTX 1650

DDR5 Arrives at 4800 MT/s Speeds, First SoCs this Year

Cadence, a fabless semiconductor company focusing on the development of IP solutions and IC design and verification tools, today posted an update regarding their development efforts for the 5th generation of DDR memory which is giving us some insights into the development of a new standard. The new DDR5 standard is supposed to bring better speeds and lower voltages while being more power-efficient. In the Cadence's blog called Breakfast Bytes, one of Cadence's memory experts talked about developments of the new standards and how they are developing the IP for the upcoming SoC solutions. Even though JEDEC, a company developing memory standards, hasn't officially published DDR5 standard specifications, Cadence is working closely with them to ensure that they stay on track and be the first on the market to deliver IP for the new standard.

Marc Greenberg, a Cadence expert for memory solutions was sharing his thoughts in the blog about the DDR5 and how it is progressing. Firstly, he notes that DDR5 is going to feature 4800 MT/s speeds at first. The initial speeds will improve throughout the 12 months when the data transfer rate will increase in the same fashion we have seen with previous generation DDR standards. Mr. Greenberg also shared that the goals of DDR5 are to have larger memory dies while managing latency challenges, same speed DRAM core as DDR4 with a higher speed I/O. He also noted that the goal of the new standard is not the bandwidth, but rather capacity - there should be 24Gb of memory per die initially, while later it should go up to 32Gb. That will allow for 256 GB DIMMs, where each byte can be accessed under 100 ns, making for a very responsive system. Mr. Greenberg also added that this is the year of DDR5, as Cadence is receiving a lot of orders for their 7 nm IP which should go in production systems this year.
Cadence DDR5

Micron to Launch HBM2 Memory This Year

Micron Technologies, in the latest earnings report, announced that they will start shipping High-Bandwidth Memory 2 (HBM2) DRAM. Used for high-performance graphics cards, server processors and all kinds of processors, HBM2 memory is wanted and relatively expensive solution, however, when Micron enters the market of its manufacturing, prices, and the market should adjust for the new player. Previously, only SK-Hynix and Samsung were manufacturing the HBM2 DRAM, however, Micron will join them and they will again form a "big-three" pact that dominates the memory market.

Up until now, Micron used to lay all hopes on its proprietary Hybrid Memory Cube (HMC) DRAM type, which didn't gain much traction from customers and it never really took off. Only a few rare products used it, as Fujitsu SPARC64 XIfx CPU used in Fujitsu PRIMEHPC FX100 supercomputer introduced in 2015. Micron announced to suspend works on HMC in 2018 and decided to devote their efforts to GDDR6 and HBM development. So, as a result, we are seeing that they will launch HBM2 DRAM products sometime this year.
Micron HMC High-Bandwidth Memory

Samsung Announces Industry's First EUV DRAM with Shipment of First Million Modules

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has successfully shipped one million of the industry's first 10 nm-class (D1x) DDR4 (Double Date Rate 4) DRAM modules based on extreme ultraviolet (EUV) technology. The new EUV-based DRAM modules have completed global customer evaluations, and will open the door to more cutting-edge EUV process nodes for use in premium PC, mobile, enterprise server and datacenter applications.

"With the production of our new EUV-based DRAM, we are demonstrating our full commitment toward providing revolutionary DRAM solutions in support of our global IT customers," said Jung-bae Lee, executive vice president of DRAM Product & Technology at Samsung Electronics. "This major advancement underscores how we will continue contributing to global IT innovation through timely development of leading-edge process technologies and next-generation memory products for the premium memory market."
Samsung EUV DDR4

Micron Samples the Industry's First uMCP Product With LPDDR5 to Increase Performance and Battery Life in 5G Smartphones

Micron Technology, Inc., today announced it began sampling the industry's first universal flash storage (UFS) multichip package (uMCP) with low-power DDR5 (LPDDR5) DRAM. The uMCP provides high-density and low-power storage designed to fit on slim and compact midrange smartphone designs.

Micron's new uMCP5 packaging builds on the company's innovation and leadership in multichip form factors. Micron uMCPs combine low-power DRAM with NAND and an onboard controller, using 40% less space compared to a two-chip solution. This optimized configuration saves power, reduces memory footprint and enables smaller and more agile smartphone designs.
RAM Production

Rambus Designs HBM2E Controller and PHY

Rambus, a maker of various Interface IP solutions, today announced the latest addition to its high-speed memory interface IP product portfolio in form of High Bandwidth Memory 2E (HBM2E) controller and physical layer (PHY) IP solution. The two IPs are enabling customers to completely integrate the HBM2E memory into their products, given that Rambus provides a complete solution for controlling and interfacing the memory. The design that Ramus offers can support for 12-high DRAM stacks of up to 24 Gb devices, making for up to 36 GB of memory per 3D stack. This single 3D stack is capable of delivering 3.2 Gbps over a 1024-bit wide interface, delivering 410 GB/s of bandwidth per stack.

The HBM2E controller core is DFI 3.1 compatible and has support for logic interfaces like AXI, OCP, or a custom one, so the customer can choose a way to integrate this core in their design. With a purchase of their HBM2E IP, Rambus will provide source code written in Hardware Description Language (HDL) and GDSII file containing the layout of the interface.

Samsung Begins Mass Production of Industry's First 16GB LPDDR5 DRAM

Samsung Electronics, a world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 16-gigabyte (GB) LPDDR5 mobile DRAM package for next-generation premium smartphones. Following mass production of the industry-first 12 GB LPDDR5 in July, 2019, the new 16 GB advancement will lead the premium mobile memory market with added capacity that enables enhanced 5G and AI features including graphic-rich gaming and smart photography.

"Samsung has been committed to bringing memory technologies to the cutting edge in allowing consumers to enjoy amazing experiences through their mobile devices. We are excited to stay true to that commitment with our new, top-of-the-line mobile solution for global device manufacturers," said Cheol Choi, senior vice president of memory sales & marketing, Samsung Electronics. "With the introduction of a new product lineup based on our next-generation process technology later this year, Samsung will be able to fully address future memory demands from global customers."
Return to Keyword Browsing