News Posts matching "DRAM"

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Crucial Ballistix Sport AT Gaming Memory Now Available

Ballistix, a leading global brand of gaming memory, today announced the immediate availability of Ballistix Sport AT memory in support of ASUS' TUF Gaming Alliance. Developed as a collaboration between ASUS, Ballistix, and other trusted industry partners, TUF Gaming Alliance ensures easier building, the best compatibility, and complementary aesthetics from components to cases.

"Our TUF Gaming Alliance relationship with Ballistix, the memory brand of choice for so many gamers, offers customers and partners an exciting new product for PC builds," said Sharon Pan, Division Director of the ASUS Motherboard Channel PM Department. "On the heels of all the positive feedback at Computex 2018, we're looking forward to a successful collaboration with Ballistix as we continue to create products that excel in both performance and aesthetics."

Samsung Announces First 8Gb LPDDR5 DRAM using 10 nm Technology

Samsung Electronics, the world leader in advanced memory technology, today announced that it has successfully developed the industry's first 10-nanometer (nm) class* 8-gigabit (Gb) LPDDR5 DRAM. Since bringing the first 8Gb LPDDR4 to mass production in 2014, Samsung has been setting the stage to transition to the LPDDR5 standard for use in upcoming 5G and Artificial Intelligence (AI)-powered mobile applications.

The newly-developed 8Gb LPDDR5 is the latest addition to Samsung's premium DRAM lineup, which includes 10nm-class 16Gb GDDR6 DRAM (in volume production since December 2017) and 16Gb DDR5 DRAM (developed in February).

Micron Provides Statement on Fujian Province Patent Litigation

(Editor's Note: We'll see if this statement from Micron is enough to staunch the bleeding on its shares - which it should, since the company says no recognizable impact will exist on its bottom line. If things are as they seem (and yet, they seldom are), this is a checkmate move from Chinese manufacturing companies - eventually supported by the Chinese government - and an interesting way to lock China's voracious DRAM and NAND market to fully domestic manufacturers.)

Micron Technology, Inc., announced that the Fuzhou Intermediate People's Court, Fujian Province, China today notified two Chinese subsidiaries of Micron that it has granted a preliminary injunction against those entities in patent infringement cases filed by United Microelectronics Corporation (UMC) and Fujian Jinhua Integrated Circuit Co. (Jinhua). The patent infringement claims of UMC and Jinhua were filed against Micron in retaliation for criminal indictments filed by Taiwan authorities against UMC and three of its employees and a civil lawsuit filed by Micron against UMC and Jinhua in the United States District Court for the Northern District of California for the misappropriation of Micron trade secrets.

Chinese DRAM Companies Stealing DRAM IP From Samsung and SK Hynix

It's not just Micron, but also Korean DRAM giants Samsung and SK Hynix, that are the latest victims of large-scale industrial espionage by Chinese DRAM makers to steal vital DRAM intellectual property (IP), according to Korea Times. Today's DRAM makers build their products on IP acquired over decades, and that is time Chinese companies do not have, and aren't willing to license from established DRAM makers, either.

"Samsung Electronics and SK Hynix have become the target of industrial espionage by Chinese memory chip manufacturers. In semiconductors, patents are critical to the cost structure. The companies have to protect what they have spent decades building. The result is Chinese companies are attempting to infringe on Samsung and SK patents," said a Korean official involved in the investigation of IP theft.

TrendForce: Price Decline Will Continue in NAND Flash Market in 2H18

The growth momentum for 2H18 NAND Flash market is expected to be weak, according to the latest report of DRAMeXchange, a division of TrendForce. Coupled with continuous improvements in yield rate and output of 64/72-layer 3D NAND Flash, DRAMeXchange expects the market to approach a balance between supply and demand, the contract prices of NAND Flash products are expected to decline further.

The contract prices of NAND Flash products have been decreasing for two consecutive quarters in 1H18 due to the traditional off-season and capacity expansion of 64/72-layer 3D NAND Flash. During this period, suppliers provided competitive prices for high-density products to boost the memory content per box, aiming to further improve the demand in peak season. Meanwhile, suppliers have postponed further plans of capacity expansion, hoping to moderate the price decline.

New Phase Change Memory Uses Antimony, Wants To Compete with DRAM

Researchers at IBM Zurich and Germany University of RTWH Aachen have developed a new non-volatile phase change memory with monoatomic glassy antimony, which unlike conventional phase-change-materials uses just a single element: antimony (Sb). Traditional phase-change memories use a mix of different materials, which makes things complicated when you try to shrink them down for higher storage densities, as impurities and composition differences negatively affect yields.

The novel approach is based on pure antimony films that are between 3 and 10 nanometers thick, confined between Silicon layers of 40-200 nm thickness. For their prototypes the engineers achieved a switching rate of 50 nanoseconds (20 MHz). While this doesn't sound very fast, the researchers are optimistic that this can be optimized further, their next goal is 10 nanoseconds, which is getting in the region of DRAM speeds.

Samsung, Micron, and Hynix Reportedly Slapped with Colossal Antitrust Fines

China's Anti-Monopoly Bureau of Ministry of Commerce visited Samsung Electronics, SK Hynix, and Micron Technology last year to express its concerns over the high prices of DRAM. Unfortunately, these meetings yielded no results as DRAM prices continued to skyrocket in the first quarter of this year. With their patience exhausted, Chinese antitrust regulators finally launched an investigation into Samsung, Micron, and Hynix, which collectively owns 90% of the global DRAM pie. The three DRAM vendors are allegedly cooperating with the Chinese authorities to shed some light into the whole DRAM price fixing matter. If found guilty, they could face fines between $800 million to $8 billion. The estimated fines were calculated based on the companies' DRAM sales in China between 2016 and 2017.

Whether you believe in coincidence or not, Samsung, Micron, and Hynix have a long history of being partners in crime. The trio, along with Infineon and Elpida Memory, conspired to fix prices on DRAM in the United States from April 1999 and June 2002. Infineon pleaded guilty in 2004 and was fined $160 million. Hynix cracked shortly afterwards and paid $185 million in fines. Elpida got off the hook easy with a $84 million fine, while Samsung took the biggest hit paying up to $300 million. Curiously, Infineon called it quits shortly after the incident, and Micron later acquired Elpida. In other news, China aims to become self-sufficient in the IC department by supporting local manufacturers like Yangtze Memory Technologies (YMTC).

Micron Ready With 96-Layer Flash & 1Y nm DRAM in 2H 2018

In their recent earnings call, Micron commented that they have 96-layer 3D NAND technology on track for volume shipments in the second half of 2018. Most of today's SSDs typically use 32-layer technology, with 64-layer flash chips used in some recent releases like the Crucial MX500. 96-layer is the third generation of 3D NAND and increases storage capacity per chip even further which allows smaller and more energy efficient mobile devices to be built. Of course it will be cheaper too, compared to current-generation 64 layer NAND, which should bring SSD pricing down even more, and of course generally help pricing of consumer products which use flash memory.

The second important note from the presentation is that Micron expects 1X nm (18 nm) DRAM production to exceed that of previous generations before the end of this year. Their next-generation 1Y nm (15/16 nm) DRAM is on track to begin production shipments in the second half of 2018, too. As they noted in a previous event, their product and process roadmap for DRAM 1z looks solid and 1-alpha development programs already under way.

Samsung & SK Hynix 18 Nanometer DRAM Yields Plagued By Technical Problems

Digitimes reports that Korean memory manufacturers Hynix and Samsung have both been hit by unstable yield rates for their 18 nm server DRAM production.

While the yields are claimed to be sufficient for notebook and desktop PC production, they are not good enough for server memory, which has higher quality requirements. Due to the shortage, Chinese enterprises like Alibaba, Huawei, Lenovo and Tencent are now switching to use 20 nanometer DRAM for their servers, which is in better supply. Other vendors have even requested that no more 18 nm chips are shipped by these Korean suppliers, in a bid to improve quality, which might take several months, but shouldn't have a significant impact on overall DRAM prices.

Apacer's PANTHER RAGE DDR4 RGB Will Glow Away the Competition

For enthusiastic gamers and modders, powerful gear is a must. And after winning over the professional gaming crowd, Apacer is bringing some colorful bling to DRAM. Since its last incarnation, PANTHER RAGE DDR4 has evolved from single-light LED to splashy RGB, with its bold new color in Gold. Apacer is going to show that the new gear is definitely worth the wait.

By implementing the newly developed hardware architecture to enhance the RGB controller, PANTHER RAGE DDR4 RGB has improved the performance by 200%. It also seamlessly integrates with the latest ASUS Aura Sync software which is popular among gamers, and allows users to select various patterns based on their preference. On top of that, it is compatible with the latest platform by Intel and AMD.

Wishful Thinking, Disingenious Marketing: Intel's Optane Being Marketed as DRAM Memory

Intel's Optane products, based on the joint venture with Micron, have been hailed as the next step in memory technology - delivering, according to Intel's own pre-launch slides, a mid-tier, al-dente point between DRAM's performance and NAND's density and pricing. Intel even demoed their most avant-garde product in recent times (arguably, of course) - the 3D XPoint DIMM SSD. Essentially, a new storage contraption that would occupy vacant DIMM channels, delivering yet another tier of storage up for grabs for speed and space-hungry applications - accelerating workloads that would otherwise become constrained by the SATA or even NVMe protocol towards NAND drives.

Of course, that product was a way off; and that product still hasn't come to light. The marriage of Optane's density and speed with a users' DRAM subsystem is just wishful thinking at best, and the dreams of pairing DRAM and 3D Xpoint in the same memory subsystem and extracting the best of both worlds remains, well... A figment of the imagination. But not according to some retailers' websites, though. Apparently, the usage of Intel's Optane products as DRAM memory has already surfaced for some vendors - Dell and HP included. How strange, then, that this didn't come out with adequate pomp and circumstance.

GALAX Hall of Fame Extreme Series Limited Edition DDR4 Memory Pictured

GALAX unveiled its Hall of Fame (HOF) Extreme series limited edition DDR4 memory with a staggering speed rating of DDR4-5000. Featuring a gold-plated heatspreader, this 16 GB (8 GB x2) dual-channel kit ticks at DDR4-5000 with timings of 21-36-36-46, and at 1.50V. If that's a little too much to handle, there's also an identical-looking kit with DDR4-4700 speeds, with tighter timings of 19-26-26-46, at 1.50V.

There's also chrome/silver colored kit clocked at DDR4-4500, with 19-19-19-39 timings and 1.40V DRAM voltage, though it lacks the limited edition tag. Getting into the mid-range of this series, we find the HOF Extreme DDR4-3600 kit, with a similar design, but matte-white heatspreaders, 17-18-18-38 timings, and safer voltages of 1.35V. The gateway to this series is the HOF Extreme DDR4-3200, with 16-18-18-38 timings, at 1.35V, and a matte-black heatspreader.

Antec Enters the PC Memory Market with AntecMemory Brand

While Corsair began as a memory maker and branched out into cases and power-supplies, Antec is taking the opposite route, starting out as a case and PSU maker. The company set up the new AntecMemory brand, complete with a new logo. Its first product is the mid-range "5-series," with the possibility of the entry-level 3-series, and high-end 7-series, for sheer driving computing pleasure. The 5-series DDR4 module features either an all-white or black+white heatspreader, with an RGB LED diffuser at a corner. For now, it only comes in 8 GB single-module kits. The module ticks at DDR4-3000, with timings of 16-18-18-36, at 1.35V. There's also an ASUS TUF Gaming Alliance co-branded kit, complete with the urban camo pattern.

Gigabyte Enters the Memory Market With AORUS RGB DDR4 DRAM

In a bid to further extend their AORUS brand to other PC-critic components, Gigabyte is putting the finishing touches to another line of own-branded PC components - DDR4 memory modules. The new DDR4 modules, marketed under the company's gaming AORUS brand, feature a brushed aluminum heatspreader with AORUS' characteristic logo. Some artistic cutouts give the modules an aggressive look, and the top of the heatspreader houses an RGB diffuser that allows the modules to light up evenly. Gigabyte's tease is only that - a tease - and the company has said the final product will likely see the aluminum toned a few shades darker.

INNOVENTIONS Launches Memory Testers for DDR4

INNOVENTIONS, Inc., the leading manufacturer of portable computer memory testers, is now shipping the RAMCHECK LX DDR4 and the RAMCHECK LX DDR4 Pro for testing and identifying industry standard DDR4 ECC and non-ECC SDRAM modules.

"DDR4 memory is now the standard for servers and PCs," said Dr. David Y. Feinstein, President of INNOVENTIONS. "With these new RAMCHECK LX memory testers, data centers, memory dealers and repair techs have a great tool to test and identify DDR4 DIMMs quickly and reliably. Considering the price of these big server DIMMs, the RAMCHECK LX pays for itself pretty quickly."

Samsung Announces 10 nm-Class DDR4 SO-DIMMs for Gaming Notebooks

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has started mass producing the industry's first 32-gigabyte (GB) double data rate 4 (DDR4) memory for gaming laptops in the widely used format of small outline dual in-line memory modules (SoDIMMs). The new SoDIMMs are based on 10-nanometer (nm)-class process technology that will allow users to enjoy enriched PC-grade computer games on the go, with significantly more capacity, higher speeds and lower energy consumption.

Using the new memory solution, PC manufacturers can build faster top-of-the-line gaming-oriented laptops with longer battery life at capacities exceeding conventional mobile workstations, while maintaining existing PC configurations. "Samsung's 32GB DDR4 DRAM modules will deliver gaming experiences on laptops more powerful and immersive than ever before," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "We will continue to provide the most advanced DRAM portfolios with enhanced speed and capacity for all key market segments including premium laptops and desktops."

Samsung, Micron, and Hynix Accused of DRAM Price Fixing

Law firm Hagens Berman has filed a class action lawsuit against Samsung, Micron, and Hynix in the US District Court for the Northern District of California. According to the firm's investigation, the three DRAM manufacturers conspired to limit the supply of DRAM chips between 2016 and 2017 with the purpose of inflating their prices. The firm affirmed that DRAM saw a 47 percent increase in price during 2017, which made it the largest jump ever in the last 30 years. As noted by the filing, Samsung, Micron and Hynix collectively own 96 percent of the worldwide DRAM market as of 2017. The "conduct changed abruptly" when the Chinese government launched an investigation to look into the matter. This class action is opened to consumers in the U.S. who've purchased a device that uses DRAM between July 1, 2016 and February 1, 2018.

"What we've uncovered in the DRAM market is a classic antitrust, price-fixing scheme in which a small number of kingpin corporations hold the lion's share of the market," stated Hagens Berman managing partner Steve Berman. "Instead of playing by the rules, Samsung, Micron and Hynix chose to put consumers in a chokehold, wringing the market for more profit."

Samsung Begins Mass Production of 10 nm-class 16 Gb LPDDR4X DRAM for Automobiles

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing 10-nanometer (nm)-class 16-gigabit (Gb) LPDDR4X DRAM for automobiles. The latest LPDDR4X features high performance and energy efficiency while significantly raising the thermal endurance level for automotive applications that often need to operate in extreme environments. The 10nm-class DRAM will also enable the industry's fastest automotive DRAM-based LPDDR4X interface with the highest density.

"The 16Gb LPDDR4X DRAM is our most advanced automotive solution yet, offering global automakers outstanding reliability, endurance, speed, capacity and energy efficiency, ," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "Samsung will continue to closely collaborate with manufacturers developing diverse automotive systems, in delivering premium memory solutions anywhere."

Ballistix Tactical Tracer RGB DDR4 Gaming Memory Now Available

Ballistix, a leading global brand of gaming memory, today announced the availability of Ballistix Tactical Tracer RGB DDR4 memory. The new Tactical Tracer RGB modules, available in 8GB and 16GB densities with speeds up to 3000 MT/s, allow gamers to light up their systems with 16 RGB LEDs in 8 zones on each module. PC modders can customise their system's look by removing the Ballistix-labeled light bar for maximum brightness, or 3D printing their own light bar to truly leave their mark on their memory.

"A lot of the members in our community love to personalise their gaming rigs and the new Tactical Tracer RGB DDR4 modules help achieve just the style they are looking for," said Jim Jardine, Director of DRAM Product Marketing. "Having an RGB module with a removable light bar that enables you to custom-make your own system gives system builders the best options for customisation and personalisation."

Marvell Introduces New NVMe Switch and SSD Controllers

Marvell, a leader in storage, networking and connectivity semiconductor solutions, today announced that it is launching innovative NVM Express (NVMe)-based chipset solutions that will accelerate the time to market for application-optimized data center SSD implementations. These new, highly-versatile building blocks can optimally address current and emerging workload storage requirements, spanning capacity, latency, performance, power and cost, to enable tailored SSD solutions for specific cloud and enterprise workloads.

The proliferation of cloud services and new technologies, such as artificial intelligence and machine learning, is driving various workloads in the data center. These evolving and expanding workloads can have differing storage requirements that emerging SSD form factors are targeted to address. Marvell has developed innovative NVMe chipsets capable of powering the larger Enterprise Data Storage Form Factors (EDSFF), Next Generation Small Form Factors (NGSFF) and various customized form factors, providing the ability to increase storage capacity, performance and overall workload efficiencies.

ADATA and XPG Feature Total Mobile Gaming Solution at MWC 2018

ADATA Technology Co., Ltd., a leading manufacturer of high performance DRAM modules and NAND Flash products, is excited to announce the first participation at Mobile World Congress (MWC) 2018,the world's largest gathering for the mobile industry. ADATA and XPG are together presenting a total mobile gaming solution that provides mobility, functionality, and convenience in order to fulfill of growing number of mobile users' needs. ADATA brings the latest three high density battery cellpower bank models that provide a lightweight and versatile choice of colors and capacities. For XPG, EMIX I30 features patented design driven by 5.2 channel surround sound with a rich and detailed sound quality. By bringing these two devices together into a small, tidy package offers an immediate convenience for mobile gamers.

Nowadays, end users have continued to be fascinated and amazed by rapidly evolving mobile technology. Mobile gaming is one of the few segments that have swiftly grown at an immense pace and with a rise in demand. XPG places an emphasis on delivering rich and detailed sound quality. The 5.2 channel EMIX I30 has established an inner vacuum tube technology that creates true 3D surround sound. It also employs oversized 13.5 mm units made of durable yet reactive monomer materials. EMIX I30 works instantly with a majority of electronic devices.

Samsung Begins Mass-production of 30.72-terabyte PM1643 SSD

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's largest capacity Serial Attached SCSI (SAS) solid state drive (SSD) - the PM1643 - for use in next-generation enterprise storage systems. Leveraging Samsung's latest V-NAND technology with 64-layer, 3-bit 512-gigabit (Gb) chips, the 30.72 terabyte (TB) drive delivers twice the capacity and performance of the previous 15.36 TB high-capacity lineup introduced in March 2016.

This breakthrough was made possible by combining 32 of the new 1TB NAND flash packages, each comprised of 16 stacked layers of 512 Gb V-NAND chips. These super-dense 1 TB packages allow for approximately 5,700 5-gigabyte (GB), full HD movie files to be stored within a mere 2.5-inch storage device.

NDRC, Samsung to Sign MOU That Could Moderate DRAM Prices, Increase Production

PC hardware enthusiasts all over (but particularly in our own forums) have been adamant in how this is one of the worst times to be building a new system. And it's true; the DIY market is a mess right now, as our own btarunr mentioned in his latest editorial; so much so, that in a full reversal of years and years of experience, users might now actually be better served in the $/performance department by buying their systems from boutique retailers, than by acquiring all of the parts separately. It's a mad, mad world out there, for a multitude of reasons; but one such reason is DRAM pricing. And fortunately, it seems that China's National Development and Reform Commission (NDRC) is on the verge of signing a Memorandum Of Understanding (MOU) with Samsung that might help the DRAM market as a whole.

SK Hynix Marks its 8Gb GDDR6 Memory Chips "Available" in Latest Catalog Update

SK Hynix, the other Korean DRAM and NAND flash giant than Samsung, updated its DRAM product catalog to reflect immediate availability of its 8-gigabit (1 GB) GDDR6 memory chips. The company is selling four SKUs, part "H56C8H24MJR-S2C" in 14 Gbps and 12 Gbps variants; and part "H56C8H24MJR-S0C" in 12 Gbps and 10 Gbps variants. The -S2C chips are more energy efficient, in achieving 14 Gbps at 1.35V and 12 Gbps at 1.25V; while the -S0C achieves 12 Gbps at 1.35V, and 10 Gbps at 1.25V. Unless NVIDIA decides that the GTX 1080-successor should feature 16 GB of memory, the company could be in the market for 8 Gb GDDR6 chips.

Meanwhile, rival Samsung announced that it began mass-production of 16 Gb (2 GB) GDDR6 memory chips, which should enable 16 GB of memory across a 256-bit memory interface, or 8 GB over a 128-bit interface. Samsung's latest chips not only have double the density as SK Hynix's, but also tick faster, at 18 Gbps, with a voltage of 1.35V. It is widely expected that GDDR6 will be the dominant memory standard for entry, mainstream, and even high-end graphics cards, which launch through 2018-19. NVIDIA is expected this year to launch its new "Volta" graphics architecture across various consumer-graphics market-segments.

Samsung Starts Producing Industry's First 16-Gigabit GDDR6 Memory

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has started mass production of the industry's first 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) memory for use in advanced graphics processing for gaming devices and graphics cards as well as automotive, network and artificial intelligence systems.

"Beginning with this early production of the industry's first 16 Gb GDDR6, we will offer a comprehensive graphics DRAM line-up, with the highest performance and densities, in a very timely manner," said Jinman Han, senior vice president, Memory Product Planning & Application Engineering at Samsung Electronics. "By introducing next-generation GDDR6 products, we will strengthen our presence in the gaming and graphics card markets and accommodate the growing need for advanced graphics memory in automotive and network systems."
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