News Posts matching "DRAM"

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ADATA Launches XPG SPECTRIX S40G RGB Gaming SSD

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces that launch of the XPG SPECTRIX S40G RGB gaming SSD. With sustained read/write speeds of up to 3500/3000MB per second, customizable RGB lighting, and a slew of performance enhancing features, the XPG SPECTRIX S40G is a no brainer for those seeking amazing performance and exceptional reliability.

The S40G supports the NVMe standard and utilizes the high-speed PCIe Gen3 x4 interface to let users enjoy sustained read/write speeds of up to 3500/3000 MB per second. What's more, sporting next-generation 3D Flash memory it offers a leap forward in capacity, efficiency, and durability. Also with the M.2 2280 specification, it supports the latest Intel and AMD platforms. These capabilities make the S40G ideally suited for gamers, PC enthusiasts, overclockers, and graphics professionals. User can customize the SSD's look with programmable RGB lighting effects. They can set up patterns, pulse speed, lighting intensity, and more. Control is a snap with XPG's RGB control software.

Intel Again Leader in Silicon Supply Race

Intel was the historic leader in silicon manufacturing and sales from 1993 through 2016, the year it lost its lead to Samsung. The issue wasn't so much to do with Intel, but more to do with market demands at the time - if you'll remember, it was the time of booming DRAM pricing alongside the smartphone demand increase that propagated stiff competition and manufacturers trying to outgun one another in the form of specs. The DRAM demand - and its ridiculous prices, at the time - propelled Samsung towards the top spot in terms of revenue, leaving Intel in the dust.

However, with the decrease in DRAM pricing following the reduce in smartphone demand and increased manufacturing capabilities of semiconductor manufacturers, which flooded the market with product that is being more slowly digested, has led to the drop of the previously-inflated Dram pricing, thus hitting Samsung's revenues enough for Intel to again become "top dog" in the silicon manufacturing world - even as the company struggles with its 10 nm rollout and faced supply issues of their own. As IC Insights puts it, "Intel replaced Samsung as the number one quarterly semiconductor supplier in 4Q18 after losing the lead spot to Samsung in 2Q17. (...) With the collapse of the DRAM and NAND flash markets over the past year, a complete switch has occurred, with Samsung having 23% more total semiconductor sales than Intel in 1Q18 but Intel having 23% more semiconductor sales than Samsung just one year later in 1Q19!".

ADATA XPG SPECTRIX D60G Breaks Overclocking Record at DDR4-5634 MHz

ADATA Technology, a leading manufacturer of high-performance DRAM modules, NAND Flash products, and mobile accessories today announces that the XPG Overclocking Lab (XOCL) has overclocked the SPECTRIX D60G RGB DDR4 memory module to a frequency of 5634 MT/s, a new record. The previous record was 5608 MT/s. The milestone was achieved with an Intel Core i9 chipset and MSI MPG Z390I GAMING EDGE AC motherboard in an LN2-cooled configuration. The results have been certified and published on HWBOT.

The D60G is built with high-quality chips and a metal heat sink for excellent signal integrity, reliability, and stability, which effectively extends the lifespan of the memory module. What's more, Intel Extreme Memory (XMP) 2.0 profiles make overclocking a snap and enhance system stability. Instead of adjusting individual parameters in BIOS, users can do it right through their PC's operating system.

AMD Ryzen 3000 "Zen 2" a Memory OC Beast, DDR4-5000 Possible

AMD's 3rd generation Ryzen (3000-series) processors will overcome a vast number of memory limitations faced by older Ryzen chips. With Zen 2, the company decided to separate the memory controller from the CPU cores into a separate chip, called "IO die". Our resident Ryzen memory guru Yuri "1usmus" Bubliy, author of DRAM Calculator for Ryzen, found technical info that confirms just how much progress AMD has been making.

The third generation Ryzen processors will be able to match their Intel counterparts when it comes to memory overclocking. In the Zen 2 BIOS, the memory frequency options go all the way up to "DDR4-5000", which is a huge increase over the first Ryzens. The DRAM clock is still linked to the Infinity Fabric (IF) clock domain, which means at DDR4-5000, Infinity Fabric would tick at 5000 MHz DDR, too. Since that rate is out of reach for IF, AMD has decided to add a new 1/2 divider mode for their on-chip bus. When enabled, it will run Infinity Fabric at half the DRAM actual clock (eg: 1250 MHz for DDR4-5000).

Apacer NOX RGB DDR4 All New Gaming Memory Hits the Market

Apacer releases an all-new DDR4 desktop PC gaming memory with ultra-wide angle RGB lighting effects, built specifically for desktop gaming, overclocking and MOD enthusiasts. Designed with unique RGB lighting, high-class aluminum alloy heat sink, and based on the world's best industrial memory module and storage technologies, this state-of-the-art memory solution uses ICs that were meticulously selected for high gaming requirements and supports Intel XMP 2.0 for one-button overclocking. NOX RGB DDR4 has a mysterious, minimalist design for top gamers to unleash mysterious forces and enjoy ultimate gaming and overclocking experiences.

Apacer NOX RGB DDR4 uses unique ultra-wide angle RGB lighting effects featuring exquisitely carved lighting bar with natural, flowing RGB colors displayed in full view. NOX RGB DDR4 is certified by the software of major motherboard manufacturers such as ASUS AURA sync, GIGABYTE RGB Fusion, MSI Mystic Light Sync and ASRock Polychrome Sync. The RGB memory light effects can be easily controlled and synchronized with system lights, so that gamers have the freedom to configure light designs according to personal preferences to display unique styles, completely making your rig truly yours in bright fashion, day or night.

Announcing DRAM Calculator for Ryzen v1.5.0 with an Integrated Benchmark

Yuri "1usmus" Bubliy, who practically wrote the book on AMD Ryzen memory overclocking, presents DRAM Calculator for Ryzen v1.5.0, the latest version of the most powerful tool available to help you overclock memory on PCs powered by AMD Ryzen processors. The biggest feature-addition is MEMBench, a new internal memory benchmark that tests performance of your machine's memory sub-system, and can be used to test the stability of your memory overclock. Among the other feature-additions include the "Compare Timings" button, which gives you a side-by-side comparison of your machine's existing settings, with what's possible or the settings you've arrived at using the app.

Motherboards vary by memory slot topology, and DRAM Calculator for Ryzen can now be told what topology your board has, so it can better tune settings such as procODT and RTT. The author also de-cluttered the main screen to improve ease of use. Among the under-the-hood changes are improved SoC voltage prediction for each generation of Ryzen. The main timing calculation and prediction algorithms are improved with the addition of the likes of GDM prediction. Also added is support for 4-DIMM system configurations. A bug in which the imported HTML profiles were automatically assumed to be specific to Samsung b-die mode. A number of minor changes were made, detailed in the change-log below.

DOWNLOAD: DRAM Calculator for Ryzen by 1usmus

Patriot Launches New Signature Premium DDR4 Memory

PATRIOT , a global leader in performance memory, SSDs, gaming peripherals, and flash storage solutions, today has announced the release of their latest Signature Premium series line of DDR4 UDIMM memory, which are Non-ECC unbuffered memory designed to deliver outstanding quality, rock solid stability and great performance expected by today's mainstream PC builder.

Signature Premium DDR4 memory provides a wide range of capacities allowing the builder to choose from a variety of speeds and capacities starting with 4GB single modules up to 32GB dual channel kits. The minimalist heat spreader design offers great heat dissipation and is made from high-purity aluminum. Signature Premium DDR4 series modules offer reliability to those who upgrade or build systems for work or business and are cost effective too.

SK Hynix Completes Expanded Fab (C2F) in Wuxi, China

SK Hynix Inc. today announced that it held a ceremony celebrating the completion of an expanded fabrication plant (or 'C2F') in Wuxi, China, on April 18th. C2F is an expansion of the existing DRAM production line, C2, in Wuxi. The Company decided to expand its production line in 2016 in order to solve the shortage of production space due to technology migration. About 500 people attended the ceremony, including Li Xiaomin, Party Secretary of Wuxi, Guo Yuanqiang, Vice Governor of Jiangsu, Choi Youngsam, Consul-General in Shanghai, Lee Seok-hee, Chief Executive Officer of SK Hynix, and representatives of clients and business partners.

SK Hynix signed a contract with Wuxi City, Jiangsu Province, China, in 2004 to establish a local factory and completed the production line (C2) in 2006 to start producing DRAM. C2 is the Company's first 300mm FAB and has played a major role in SK Hynix's growth to date. However, with technology scaling, the number of processes has increased and the equipment has become larger, which led to the shortage of the cleanroom space. SK Hynix, therefore, has invested a total of 950 billion KRW from June 2017 to April 2019 to secure additional production space.

SK Hynix Inc. Reports First Quarter 2019 Results

SK Hynix Inc. today announced financial results for its first quarter 2019 ended on March 31, 2019. The consolidated first quarter revenue was 6.77 trillion won while the operating profit amounted to 1.37 trillion won and the net income 1.1 trillion won. Operating margin for the quarter was 20% and net margin was 16%.

Because of a faster-than-expected price decline and lower shipments due to slowing memory demand, the revenue and the operating profit in the first quarter fell by 32% and 69%, respectively, quarter-over-quarter (QoQ). Due to seasonal slowdown and conservative server purchases, DRAM bit shipments decreased by 8% QoQ. The average selling price dropped by 27%. For NAND Flash, the average selling price decreased by 32% due to high inventory levels and intensifying competition among suppliers. The bit shipments declined by 6% QoQ.

HyperX Releases High Speed Additions to Predator DDR4 Memory Lineup

HyperX, the gaming division of Kingston Technology, Inc., today announced the release of two new high speed Predator DDR4 memory kits in 4266 MHz and 4600 MHz frequency versions. The new frequency options will be available as 8GB modules in kits of two and include a black aluminum heat spreader and black PCB to complement the look of the latest PC builds by system builders and DIY PC enthusiasts.

"The HyperX team is excited to offer Predator DDR4 for the next generation of PC enthusiasts who want the best performance from their systems," said Kristy Ernt, DRAM business manager, HyperX. "As HyperX continues to support the world of gaming and esports, the community sees us as a trusted leader for high speed memory in the gaming hardware industry."

Samsung Profits Tank as DRAM, NAND Flash, and SoC Prices Slump

Samsung Electronics Q1-2019 preliminary reads like a horror story to investors, as the company posted its worst drop in operating-profit in over four years. Operating income fell 60 percent in the quarter ending March 2019, to about USD $5.5 billion, beating Bloomberg analysts who had predicted a 56 percent drop. Sluggish sales to IoT major Amazon, smartphone major Apple, and other handset makers, compounded by swelling inventory in the supply chain, has triggered sharp drops in DRAM prices that were offsetting critically low NAND flash prices. Demand for Samsung SoCs (application processors) is also on the decline.

Samsung is betting heavily on the success of its Galaxy S10 family of smartphones to recover from losses faced in the three component markets. Prices of DRAM prices fell 22 percent YoY, and NAND flash continues to slide by roughly that much, at 23 percent. NAND flash prices have been on a continuous decline over the past 3 years. DRAM prices, on the other hand, rallied in that period, and it's only now that it posted its first price-drop since 2016. NAND flash prices are expected to slide further down, as oversupply and failure of newer technologies like QLC taking off, hurt NAND flash manufacturers.

Kingston Server Premier DDR4-2933 RDIMMs Validated on Intel "Cascade Lake"

Kingston Technology Company, Inc., a world leader in memory products and technology solutions, today announced its 32GB, 16GB and 8GB Server Premier DDR4-2933 Registered DIMMs have received validation on the Intel Purley Platform, featuring the Intel Xeon Scalable processor family (formerly known as "Cascade Lake-SP"). A link to the validation page can be found here.

Kingston's Purley-validated Server Premier modules are specifically engineered to unleash the power of Intel's six-channel server microarchitecture. At 2933MT/s - the next-generation memory frequency supported in the latest Intel Xeon Scalable processor family - each DIMM provides peak bandwidth of 23.46 GB/s. When grouped for multi-channel performance, this provides a significant boost in performance for today's memory intensive server applications.

Intel Announces Broadest Product Portfolio for Moving, Storing, and Processing Data

Intel Tuesday unveiled a new portfolio of data-centric solutions consisting of 2nd-Generation Intel Xeon Scalable processors, Intel Optane DC memory and storage solutions, and software and platform technologies optimized to help its customers extract more value from their data. Intel's latest data center solutions target a wide range of use cases within cloud computing, network infrastructure and intelligent edge applications, and support high-growth workloads, including AI and 5G.

Building on more than 20 years of world-class data center platforms and deep customer collaboration, Intel's data center solutions target server, network, storage, internet of things (IoT) applications and workstations. The portfolio of products advances Intel's data-centric strategy to pursue a massive $300 billion data-driven market opportunity.

AMD Ryzen 3000 "Zen 2" BIOS Analysis Reveals New Options for Overclocking & Tweaking

AMD will launch its 3rd generation Ryzen 3000 Socket AM4 desktop processors in 2019, with a product unveiling expected mid-year, likely on the sidelines of Computex 2019. AMD is keeping its promise of making these chips backwards compatible with existing Socket AM4 motherboards. To that effect, motherboard vendors such as ASUS and MSI began rolling out BIOS updates with AGESA-Combo 0.0.7.x microcode, which adds initial support for the platform to run and validate engineering samples of the upcoming "Zen 2" chips.

At CES 2019, AMD unveiled more technical details and a prototype of a 3rd generation Ryzen socket AM4 processor. The company confirmed that it will implement a multi-chip module (MCM) design even for their mainstream-desktop processor, in which it will use one or two 7 nm "Zen 2" CPU core chiplets, which talk to a 14 nm I/O controller die over Infinity Fabric. The two biggest components of the IO die are the PCI-Express root complex, and the all-important dual-channel DDR4 memory controller. We bring you never before reported details of this memory controller.

Samsung Develops Industry's First 3rd-generation 10nm-Class DRAM

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm) eight-gigabit (Gb) Double Data Rate 4 (DDR4) DRAM for the first time in the industry. In just 16 months since it began mass producing the 2nd-generation 10nm-class (1y-nm) 8Gb DDR4, development of 1z-nm 8Gb DDR4 without the use of Extreme Ultra-Violet (EUV) processing has pushed the limits of DRAM scaling even further.

As 1z-nm becomes the industry's smallest memory process node, Samsung is now primed to respond to increasing market demands with its new DDR4 DRAM that has more than 20-percent higher manufacturing productivity compared to the previous 1y-nm version. Mass production of the 1z-nm 8Gb DDR4 will begin within the second half of this year to accommodate next-generation enterprise servers and high-end PCs expected to be launched in 2020.

Micron Unveils 2200 Client-segment SSD, Ditches SMI for In-house Controller

Micron has curiously been releasing client-segment SSDs these recent weeks. The company's main brand was focused on enterprise products, while subsidiary brands Crucial and Ballistix catered to the client-segment. Following up on its late-February launch of the 1300-series client-segment SSDs, Micron unveiled the even faster 2200-series. These drives ditch Silicon Motion-sourced controllers in favor of a new controller Micron designed in-house. Built in the M.2-2280 form-factor with PCI-Express 3.0 x4 interface, taking advantage of the NVMe protocol. This in-house controller is mated with Micron's 64-layer 3D TLC NAND flash, cushioned by its own LPDDR4 DRAM cache.

Available in capacities of 256 GB, 512 GB, and 1 TB, the Micron 2200 is rated to offer sequential transfer rates of up to 3000 MB/s reads, with up to 1600 MB/s writes, up to 240,000 IOPS 4K random reads, and up to 210,000 IOPS 4K random writes, with an endurance rating of 75 TB, 150 TB, and 300 TB, for the 256 GB, 512 GB, and 1 TB variants, respectively. Micron-exclusive features also make their way, such as native power-loss data-protection, and TCG Opal SED. The company hasn't revealed pricing or availability for these drives.

DigiTimes: Micron, Samsung, SK Hynix to See DRAM, Flash Revenue Fall in 1Q19

DigiTimes is reporting that three of the major DRAM and Flash players in the industry - Micron, Samsung and SK Hynix - are expected to drop an astonishing 26% sequentially on 1Q19 and 29% YoY for 1Q19. The combined revenue drop for the three DRAM and Flash semiconductor giants comes in the face of seasonality and decreasing prices, and the decline continues an already negative 4Q18, which saw a decrease of 18% sequentially and 26% from a year earlier.

With memory pricing facing a continuous decline in recent times, clients are taking a pondered approach towards ordering from manufacturers - an expectation of future savings being the main factor for this. Demand, however, is expected to pick up in 2H19, due to increased demand from end customers, following price-cuts from manufacturers and improved specifications on end-products.

Intel's FinFET-Based Embedded MRAM is Ready for Production

A report via EETimes slates Intel's own working MRAM (Magnetoresistive Random-Access Memory) is ready for production in high-volume manufacturing. MRAM is a nonvolatile memory technology, meaning that it retains information even if there is a change in powerstate (ie, power loss), meaning that it's more akin to a storage device than to, say, RAM.

But why does MRAM matter, really? Well, MRAM is being developed as a long-term candidate to a universal memory solution, replacing both DRAM (a volatile memory technology) and NAND flash (a nonvolatile one), since node scaling with these technologies is becoming increasingly harder. MRAM promises better-scaling (at the foundry level) processes, with much higher yield rates. The fact that MRAM has been demonstrated to be able to achieve 1 ns settling times, better than the currently accepted theoretical limits for DRAM, and much higher write speeds (as much as thousands of times faster) compared to NAND flash.

JEDEC Updates Standard for Low Power Memory Devices: LPDDR5

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-5, Low Power Double Data Rate 5 (LPDDR5). LPDDR5 will eventually operate at an I/O rate of 6400 MT/s, 50% higher than that of the first version of LPDDR4, which will significantly boost memory speed and efficiency for a variety of applications including mobile computing devices such as smartphones, tablets, and ultra-thin notebooks. In addition, LPDDR5 offers new features designed for mission critical applications such as automotive. Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, LPDDR5 is available for download from the JEDEC website.

With the doubling of memory throughput over the previous version of the standard (LPDDR5 is being published with a data rate of 6400 MT/s, compared to 3200 MT/s for LPDDR4 at its publication in 2014), LPDDR5 promises to have an enormous impact on the performance and capabilities of the next generation of portable electronic devices. To achieve this performance improvement, LPDDR5 architecture was redesigned; moving to 16Banks programmable architecture and multi-clocking architecture.

Advantech Unveils New Lineup of SQRAM DDR4 32GB Unbuffered Memory for HPC

Advantech, a leading global flash storage and memory solutions provider in the embedded market, announces the industry's most comprehensive lineup of 32GB DDR4 unbuffered DIMM memory. Advantech SQRAM offers single 32GB DRAM modules in various DIMM types including SODIMM, UDIMM, ECC DIMM, and extremely robust Rugged DIMM with guaranteed wide temperature operation for high performance computing in applications such as networking and military.

As the global IoT market gradually embraces big data and edge computing, demand for high data and performance processing is increasing. SQRAM 32 GB unbuffered DIMM memory uses Samsung's 16 Gb 2666 MT/s IC chips for high reliability requirements in mission critical applications. SQRAM 32 GB wide temperature operation (-40~85 °C) Rugged DIMM offers extreme vibration resistance, plus ECC checking to ensure data accuracy.

China-based DRAM Maker Fujian Jinhua Closing Shop in March Following US Trade Ban in October

Remember that story we brought you regarding the United States government, via its Department of Commerce, banning all exports from national companies to China-based Fujian Jinhua Integrated Circuits Ltd? Well, fast-forward three months, and the Financial Times is reporting, citing two sources close to the matter, that the ban has been too much for the company to take, limiting its ability to import needed parts and tools for its DRAM production. This is tough news for a company that was investing towards finishing construction of a $5.7 billion factory in China's Fujian Province.

If the Financial Times is true, this is one potential player in the DRAM market that goes out the proverbial window. The original reasons given by the Department of Commerce for the export ban referred to the company being supported by "likely U.S.-origin technology", reportedly of Micron origin. Well, now it seems as if it isn't being supported at all.

SK Hynix Fellow Says PC5 DDR5 by 2020, DDR6 Development Underway

The PC5 DDR5 main memory standard could enter the market by 2020, according to SK Hynix research fellow Kim Dong-Kyun. The first such memory standard will be DDR5-5200, which offers nearly double the bandwidth of DDR4-2666. "We are discussing several concepts of the post DDR5," he said. "One concept is to maintain the current trend of speeding up the data transmission, and another is to combine the DRAM technology with system-on-chip process technologies, such as CPU," he added, without offering any additional information. SK Hynix had in 2018 developed a working prototype of a 16-gigabit (2 GB) DDR5 DRAM chip ticking at 5200 MT/s, at 1.1 Volts. A 64-bit wide memory module made with these chips could offer bandwidth of 41.6 GB/s.

SK Hynix is developing its own innovations that could make its DDR5 chips more advanced than the competition without going off-standard. "We have developed a multi-phase synchronization technology that enables keeping the voltage during a high-speed operation in a chip at a low level by placing multiple phases within the IP circuit, so the power used on each phase is low but the speed is high when combined," Kim said. He also mentioned that development of the DDR6 PC memory standard is already underway, with the design goals of doubling bandwidth and densities over DDR5. Advancements in DRAM are propelled not just by the PC ecosystem, but also handhelds and self-driving car electronics.

Transcend Launches MTE220S M.2 NVMe SSD Series

Transcend Information Inc., a leading manufacturer of storage and multimedia products, is proud to announce the MTE220S PCIe M.2 Solid-State Drive. This SSD utilizes PCI Express Gen3 x4 interface and is compatible with NVM Express (NVMe) specifications. Utilizing this interface means never-before-seen transfer speeds of 3,500 MB/s read and 2,800 MB/s write are now a reality. Using 3D chips and packing into a M.2 2280 form factor, the MTE220S SSD is the must-have for gaming enthusiasts and high-end applications.

Transcend's MTE220S SSD comes equipped with DDR3 DRAM cache memory. This means that commonly used programs load much faster, and boot time is greatly reduced. Utilizing SLC caching, the MTE220S SSD can reach astonishing read/write speeds of 3,500 MB/s and 2,800 MB/s, respectively, and 4K Random performance is also significantly improved. In addition to speeds, reliability is also enhanced with the Low Density Parity Check code in place.

ASUS Announces Expanded Memory Support for Z390 Motherboards

ASUS today announced that its Z390 motherboards will support a maximum DRAM capacity of 128GB via a UEFI BIOS update that's being rolled out from today on the ASUS support site. ASUS will bring this increased memory support to all Z390 motherboards via additional BIOS updates that will be available soon.

Previously, support for 128GB of DRAM was available only on high-end desktop (HEDT) motherboards with eight DIMM slots, such as the Intel X299 platform. Intel recently updated its memory reference code (MRC), enabling the memory controller in 9th Gen Intel Core processors to increase the supported capacity of each DIMM from 16GB to 32GB, resulting in a total system memory capacity of 128GB when populated with two DIMMs per channel (2DPC) on both memory channels. This increased memory support gives users more flexibility for running memory-intensive applications and tasks.

Intel Unveils "Lakefield" Heterogenous SoC and "Project Athena"

Intel today unveiled a killer new product with which it hopes to bring about as big a change to mobile computing as Ultrabook did some eight years ago. This effort is a combination of a new mobile computing form-factor codenamed "Project Athena," and an SoC at its heart, codenamed "Lakefield." Put simply, "Lakefield" is a 10 nm SoC that's integrated much in the same way as today's ARM SoCs, which combine IP from various vendors onto a single PoP (package-over-package) Foveros die.

The biggest innovation with "Lakefield" is its hybrid x86 multi-core CPU design, which combines four Atom-class low-power cores, with one Core-class "Sunny Cove" core, in a setup akin to ARM's big.LITTLE. Low-power processing loads are distributed to the smaller cores, while the big core is woken up to deal with heavy loads. The SoC also integrates a Gen 11 iGPU core, partial components to accelerate 802.11ax WLAN, 5G, an PoP DRAM and NVMe storage devices. The reference motherboard based on "Lakefield" is barely larger than an M.2 SSD!
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