News Posts matching "IMFlash Technology"

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Intel Intros SSD 545s Mainstream SATA SSD

Intel today announced the SSD 545s line of mainstream SATA solid-state drives. Built in the 7 mm-thick 2.5-inch form-factor with SATA 6 Gbps interface, the drives combine new 64-layer 3D TLC NAND flash memory by IMFlash Technology, with a Silicon Motion SMI SM2259 controller, and a custom firmware by Intel. For now, the drive is only available in one capacity, 512 GB. It offers sequential transfer speeds of up to 550 MB/s, with up to 500 MB/s sequential writes; 4K random read performance of up to 75,000 IOPS, 4K random write performance of up to 85,000 IOPS, and endurance of at least 144 TBW. Besides common SSD features such as NCQ and TRIM, the drive offers native 256-bit AES encryption. Available now, and backed by a 3-year warranty, the SSD 545s 512 GB is priced at USD $179.99.

Intel Readies TLC 3D NAND Flash Based 610P Series PCIe SSD for 2017

Intel is readying a follow-on to its 600P series performance-segment PCIe solid-state drive (SSD) series, with the 610P series. Built in the M.2-2280 form-factor, with PCIe gen 3.0 x4 bus interface, and support for the NVMe protocol, the SSD 610P will be based on TLC 3D NAND flash by IMFlash Technology, the company's joint-venture with Micron Technology. The SSD 610P series will come in capacities of 128 GB, 256 GB, 512 GB, 1 TB, and 2 TB.

The company is also working on a smaller M.2-1620 variant for notebooks and SFF desktops, which will feature a BGA version of the SSD. These are multi-chip modules of NAND flash stacks and SSD controllers bundled into single packages. The BGA variants will come in sizes of 128 GB, 256 GB, and 512 GB. Not much else (performance figures) are known about these drives, except that Intel plans to release these towards Q4 2017 (after September).

Source: Benchlife.info

Intel Unveils DC S3510 SSDs for the Data Center

Intel quietly announced availability of its DC S3510 SSDs for data centers. Built in the 2.5-inch form-factor, with SATA 6 Gb/s interface, these drives feature SET (standard-endurance technology) MLC NAND flash built by IMFlash Technology, on a 16 nanometer node, which can take in up to 880 TBW. Its controller offers native 256-bit AES encryption. The drive is available in capacities of 80 GB, 120 GB, 240 GB, 480 GB, 800 GB, 1.2 TB, and 1.6 TB. The table below shows sequential and 4K random access performance figures by the company for each model. The drives are backed by 5-year warranties, and are available in the OEM channel. Its target consumers are low-cost dedicated hosting providers.

Intel and Micron develop first-ever 128 Gb NAND Flash memory chip

Flash buddies Intel and Micron have today announced a significant breakthrough in terms of NAND density, the first 128 Gb (16 GB) MLC NAND memory chip. Manufactured on 20 nm process technology, this 128 Gb chip complies with the ONFI 3.0 specification (enabling speeds of up to 333 megatransfers per second) and can be used for new, high-capacity solid state drives, as well as for next-generation tablets, smartphones and other portable devices.

According to Intel and Micron, this milestone was made possible by the use of a new, innovative cell structure that 'breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.'

Intel, Micron Extend NAND Flash Technology Leadership, Introduce 20 nm NAND Flash

Intel Corporation and Micron Technology Inc. today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, providing a high-capacity, small form factor storage option for saving music, video, books and other data on smartphones, tablets and computing solutions such as solid-state drives (SSDs).

The growth in data storage combined with feature enhancements for tablets and smartphones is creating new demands for NAND flash technology, especially greater capacity in smaller designs. The new 20nm 8GB device measures just 118mm² and enables a 30 to 40 percent reduction in board space (depending on package type) compared to the companies' existing 25nm 8GB NAND device. A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.
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