The drive uses the M.2 2280 form factor, which makes it 22 mm wide and 80 mm long.
Like most M.2 NVMe SSDs, the Sabrent Rocket Q connects to the host system over a PCI-Express 3.0 x4 interface.
Sabrent's sticker doubles up as a heatspreader due to it having copper foil underneath.
On the PCB, you'll find the controller, four flash chips, and one DRAM chip. The other side of the PCB is empty and will only be populated on the 2 TB and 4 TB version.
Chip Component Analysis
The flash controller is made by Phison and is their latest model with support for QLC and PCI-Express 3.0 x4. It uses eight flash channels and is produced on a 28 nm process at TSMC Taiwan. The main difference to the E12 without the "S" is that the E12S is physically smaller, works with half the DRAM capacity of the E12, and uses a metal case, which helps with thermals.
The four QLC flash chips are made by Toshiba, built using 96-layers. Normally, Toshiba part numbering starts with "TA"; here, we see "IA", which could stand for Kioxia or indicate some sort of third-party binning process.
A single Kingston DDR3L-1866 chip provides 256 MB of fast DRAM storage for the controller to store the mapping tables. Having just 256 MB of DRAM per TB NAND capacity is new—normally, we'd be expecting 1 GB or 512 GB. This looks like a cost optimization by Phison. It'll be interesting to see performance numbers.