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Samsung PM961 512 GB

512 GB
Capacity
Samsung Polaris
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Flash
Tom's Hardware
Flash
DRAM
Tom's Hardware
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM961 was a solid-state drive in the M.2 2280 form factor, launched in 2016, that is no longer in production. It was available in capacities ranging from 128 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Samsung PM961 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Polaris (S4LP077X01-8030) from Samsung, a DRAM cache chip is available. Samsung has installed 48-layer TLC NAND flash on the PM961, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 6 GB, once it is full, writes complete at 650 MB/s. The PM961 is rated for sequential read speeds of up to 3,100 MB/s and 1,700 MB/s write; random IO reaches 330K IOPS for read and 300K for writes.
At its launch, the SSD was priced at 280 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. The TBW rating for the Samsung PM961 512 GB is unknown.

Solid-State-Drive

Capacity: 512 GB
Variants: 128 GB 256 GB 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: End-of-life
Released: 2016
Price at Launch: 280 USD
Part Number: MZVLW512HEGP-00000
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Samsung
Name: Polaris (S4LP077X01-8030)
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Foundry: Samsung
Process: 28 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V3
Part Number: K90MGY8S7M-CCK0
Type: TLC
Technology: 48-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 2 Tbit
Topology: Charge Trap
Die Size: 98 mm²
(2.6 Gbit/mm²)
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 54 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 660 µs
Block Erase Time (tBERS): 3500 ms
Die Write Speed: 53 MB/s
Page Size: 16 KB
Block Size: 576 Pages
Plane Size: 3776 Blocks

DRAM Cache

Type: LPDDR3-1600
Name: Samsung K4E4E324EE-ECCF
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx32

Performance

Sequential Read: 3,100 MB/s
Sequential Write: 1,700 MB/s
Random Read: 330,000 IOPS
Random Write: 300,000 IOPS
Endurance: Unknown
Warranty: 3 Years
MTBF: 1.5 Million Hours
SLC Write Cache: approx. 6 GB
(static only)
Speed when Cache Exhausted: approx. 650 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Oct 5th, 2024 02:48 EDT change timezone

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