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Western Digital SN8100 1 TB

1 TB
Capacity
SM2508
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Western Digital SN8100 is a solid-state drive in the M.2 2280 form factor, launched in May 2025. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Western Digital SN8100 interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the SM2508 from Silicon Motion, a DRAM cache chip is available. Western Digital has installed 218-layer TLC NAND flash on the SN8100, the flash chips are made by Kioxia. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The SN8100 is rated for sequential read speeds of up to 14,900 MB/s and 11,000 MB/s write; random IO reaches 1600K IOPS for read and 2400K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: May 2025
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown (Idle)
7.0 W (Avg)
Unknown (Max)

Controller

Manufacturer: Silicon Motion
Name:
SM2508
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Architecture: ARM 32-bit Cortex-R8 + ARM 32-bit Cortex-M0
Core Count: 5-Core
Frequency: 1,250 MHz
Foundry: TSMC FinFET
Process: 6 nm
Flash Channels: 8 @ 3,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Kioxia
Name: BiCS8
Type: TLC
Technology: 218-layer
Speed: 3600 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 5.1
Topology: Charge Trap
Die Size: 60 mm²
(17.1 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 241 per NAND String
90.5% Vertical Efficiency
Read Time (tR): 40 µs
Die Write Speed: 205 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 2748 Pages
Plane Size: 3270 Blocks

DRAM Cache

Type: DDR4
Capacity: 1024 MB
(1x 1024 MB)

Performance

Sequential Read: 14,900 MB/s
Sequential Write: 11,000 MB/s
Random Read: 1,600,000 IOPS
Random Write: 2,400,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

This controller features a Quad-core Cortex-R8 running at 1.25GHz as primary cores, while having a Cortex-M0 as a secondary core for peripheral.

NAND Die:

This chip is comprised of 8 physical planes (sub planes) with 8KB WLs working as 4 logical planes to keep short BL and WL latency.
tPROG: Could be between 312µs and 624µs

Jul 30th, 2025 06:57 CDT change timezone

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