Samsung is preparing to launch its 9th Generation V-NAND (3D NAND flash) memory next month, Korean publication Hankyung reports. The 9th Gen 3D NAND flash memory by Samsung is expected to offer 290 layers, a step-up from the 236-layer 8th Gen V-NAND that the company debuted in 2022. Samsung reportedly achieved the 290-layer vertical stacking density through improvements in its flash layer stacking techniques that relies on increasing the layer counts through more memory holes in the flash layer. The cost here is data density per wafer, but a net gain from the increase in layer counts.

The same source behind the 9th Gen V-NAND story also reports that the company is targeting a rather early 2025 launch for its successor—the 10th Gen V-NAND. This is expected to be a mammoth 430-layer 3D NAND flash, a jump of 140 layers over the 9th Gen (which itself jumped by 54 layers over its predecessor). This would put Samsung back on track along with its competitors, Kioxia, SK Hynix, Micron Technology, and YMTC, as they gun for the ambitious goal of 1000-layer 3D NAND flash by 2030.Many Thanks to TumbleGeorge for the tip.

MSI, a global leader in gaming PC hardware, is thrilled to announce the release of its highly anticipated SSD powerhouse, the SPATIUM M580 FROZR, ushering in a new era of storage performance. With cutting-edge technology and innovative thermal solutions, this SSD is set to redefine the standards of speed and reliability in storage solutions.

SPATIUM M580 FROZR, Reaching New Heights with Crowned Speeds
The SPATIUM M580 FROZR sets a new benchmark in storage performance with its revolutionary features. Powered by the state-of-the-art PHISON E26 PCIe Gen 5 controller and equipped with advanced 3D NAND flash modules boasting 232 layers, this SSD achieves mind-blowing read speeds of up to 14.6 GB/s and write speeds of up to 12.7 GB/s, up to 2 times faster transfer rates compared to current PCIe 4.0 SSDs. This represents a significant leap in speeds, boosted by a DRAM cache buffer and a SLC Cache, providing users with lightning-fast data access and gaining valuable milliseconds in latency for gaming, content creation, and professional applications. Additionally, the M580 FROZR is fortified with LPDC ECC and E2E Data Protection, ensuring data integrity and reliability. With a high TBW (Terabytes Written) value and backed by a comprehensive 5-year warranty, users can trust in the durability and longevity of the SPATIUM M580 FROZR in 1 TB, 2 TB and 4 TB variants after an easy installation.

Silicon Motion Technology Corporation ("Silicon Motion"), a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today introduced the new generation FerriSSD NVMe PCIe Gen 4 x4 BGA SSD. This latest solution features support for i-temp and integrates advanced IntelligentSeries technology, delivering robust data integrity in extreme temperature environments that meet the rigorous demands of industrial embedded systems and automotive applications.

The latest FerriSSD BGA SSD supports PCIe Gen 4 x4 and uses high density 3D NAND within a compact 16 mm x 20 mm BGA chip-scale package. With storage capacities up to 1 TB, these high-performance embedded SSDs utilize Silicon Motion's latest innovations to achieve high sequential read speeds exceeding 6 GB/s and sequential write speeds exceeding 4 GB/s. Equipped with Silicon Motion's proprietary IntelligentSeries data protection technology that enhances reliability and performance through the use of encryption, data caching, data scanning and protect features, as well as supporting the i-temp requirements of operating in extreme temperatures from -40°C to + 85°C. This latest FerriSSD offers a high performance and highly reliable embedded storage solution for a broad range of applications and operating environments including in-car computing, thin client computing, point-of-sale terminals, multifunction printers, telecommunications equipment, factory automation tools, and a wide range of server applications.

Leaked Samsung PBSSD presentation material popped up online a couple of days prior to the kick-off day of NVIDIA's GTC 2024 conference (March 18)—reports (at the time) jumped on the potential introduction of a "petabyte (PB)-level SSD solution," alongside an enterprise subscription service for the US market. Tom's Hardware took the time to investigate this matter—in-person—on the showroom floor up in San Jose, California. It turns out that interpretations of pre-event information were slightly off—according to on-site investigations: "despite the name, PBSSD is not a petabyte-scale solid-state drive (Samsung's highest-capacity drive can store circa 240 TB), but rather a 'petascale' storage system that can scale-out all-flash storage capacity to petabytes."

Samsung showcased a Supermicro Petascale server design, but a lone unit is nowhere near capable of providing a petabyte of storage—the Tom's Hardware reporter found out that the demonstration model housed: "sixteen 15.36 TB SSDs, so for now the whole 1U unit can only pack up to 245.76 TB of 3D NAND storage (which is pretty far from a petabyte), so four of such units will be needed to store a petabyte of data." Company representatives also had another Supermicro product at their booth: "(an) H13 all-flash petascale system with CXL support that can house eight E3.S SSDs (with) four front-loading E3.S CXL bays for memory expansion."

Apple introduced its new generation of MacBook Air subcompact laptops last week—their press material focused mostly on the "powerful M3 chip" and its more efficient Neural Engine. Storage options were not discussed deeply—you had to dive into the Air M3's configuration page or specification sheet to find out more. Media outlets have highlighted a pleasing upgrade for entry-level models, in the area of internal SSD transfer speeds. Apple has seemingly taken onboard feedback regarding the disappointing performance of its basic MacBook Air M2 model—its 256 GB storage solution houses a lone 3D NAND package. Max Tech's Vadim Yuryev was one of the first media personalities to discover the presence of two NAND flash chips within entry-level MacBook Air M3 systems—his channel's video teardown can be watched below.

The upgrade from a single chip to a twin configuration has granted higher read and write speeds—Yuryev shared Blackmagic SSD speed test results; screengrabs from his video coverage are attached to this article. M3 MacBook Air's 256 GB solution achieved write speeds of 2,108 MB/s, posting 33% faster performance when compared to an equivalent M2 MacBook Air configuration. The M3 model recorded read speeds of 2,880 MB/s—Wccftech was suitably impressed by this achievement: "making it a whopping 82 percent than its direct predecessor, making it quite an impressive result. The commendable part is that Apple does not require customers to upgrade to the 512 GB storage variants of the M3 MacBook Air to witness higher read and write speeds." Performance is still no match when lined up against "off-the-shelf" PCIe 3.0 x4 drives, and tech enthusiasts find the entry price point of $1099 laughable. Apple's lowest rung option nets a 13-inch model that packs non-upgradable 8 GB of RAM and 256 GB of storage. Early impressions have also put a spotlight on worrying thermal issues—Apple's fan-less cooling solution is reportedly struggling to temper their newly launched M3 mobile chipset.

Micron Technology, Inc. announced today that it is delivering qualification samples of an enhanced version of its Universal Flash Storage (UFS) 4.0 mobile solution with breakthrough proprietary firmware features delivered in the world's most compact UFS package at 9x13 millimeters (mm). Built on its advanced 232-layer 3D NAND and offering up to 1 terabyte (TB) capacity, the UFS 4.0 solution provides best-in-class performance and end-to-end innovation, enabling faster and more responsive experiences on flagship smartphones.

Micron UFS 4.0 accelerates data-intensive experiences with up to 4300 megabytes per second (MBps) sequential read and 4000 MBps sequential write speed, twice the performance of previous generations. With these speeds, users will be able to launch their favorite productivity, creativity, and emerging AI apps more quickly. Large language models in generative AI applications can be loaded 40% faster, resulting in a smoother experience when initializing conversations with AI digital companions.

Sabrent today announced its latest flagship M.2 NVMe SSD series, the Rocket 5. Built in the M.2-2280 form-factor, the Sabrent Rocket 5 is sold as a bare drive, with an included fan-heatsink that you install if needed. This cooler comes with a tiny fins-stack, two copper heat pipes, and a 20 mm fan. At the heart of the drive is the new Phison PS5026-E26 Max14um controller, paired with Micron B58R 232-layer 3D TLC NAND flash memory, and LPDDR4 based DRAM cache. The drive comes in 1 TB, 2 TB, and 4 TB capacity variants.

The company didn't put out capacity-specific performance or endurance numbers, but mentioned sequential read speeds of up to 14 GB/s, as is characteristic of the Max14um controller variant; up to 12 GB/s sequential write speeds, up to 1.55 million IOPS 4K random reads, with up to 1.8 million IOPS 4K random writes. The Rocket 5 replaces the Rocket 4 Plus as Sabrent's flagship SSD. The 4 TB variant is listed at $730, the 2 TB variant at $340, and the 1 TB variant at $190.

Transcend, a premier manufacturer of embedded memory products and storage solutions, is proud to announce the launch of the all-new MTS570P, a Power Loss Protection (PLP) SSD aimed at enhancing storage reliability for embedded systems. Engineered with a compact form factor without compromising on performance, it is an ideal solution for edge servers, IoV systems, network switches, POS machines, and various other types of edge devices.

Power Loss Protection (PLP) stands as a critical feature in modern embedded systems, particularly when used in rugged environments. Its main purpose is to safeguard data integrity during unstable power supply or unexpected power loss/failure, ultimately enhancing overall system reliability and safety by providing a stable and secure storage solution.

Japan's Jiji news agency has cottoned onto a major computer memory industry rumble—a Friday Reuters report suggests that Kioxia has offered an olive branch to SK Hynix, perhaps in a renewed push to get its proposed (and once rejected) merger with Western Digital over the finishing line. The South Korean memory manufacturing juggernaut took great issue with the suggested formation of a mighty Japanese-American 3D NAND memory chip conglomerate—SK Hynix's opposition reportedly placed great pressure on Western Digital (WD), and discussions with Kioxia ended last October.

Kioxia is seemingly eager to resume talks with WD, but requires a thumbs up from SK Hynix—according to Jiji's insider source(s), the Tokyo-headquartered manufacturer is prepared to offer its South Korean rival a nice non-volatile memory production deal. Kioxia's best Japanese 3D NAND fabrication facilities could play host to SK Hynix designs, although it is too early to tell whether this bid has been accepted. The Yokkaichi and Kitakami plants are set to receive a 150 billion yen Government subsidy—Kioxia and WD's joint venture is expected to move into cutting-edge semiconductor production. The Japanese government is hoping to secure its native operations in times of industry flux.

Japanese tech giant Canon hopes to shake up the semiconductor manufacturing industry by shipping new low-cost nanoimprint lithography (NIL) machines as early as this year. The technology, which stamps chip designs onto silicon wafers rather than using more complex light-based etching like market leader ASML's systems, could allow Canon to undercut rivals and democratize leading-edge chip production. "We would like to start shipping this year or next year...while the market is hot. It is a very unique technology that will enable cutting-edge chips to be made simply and at a low cost," said Hiroaki Takeishi, head of Canon's industrial group overseeing nanoimprint lithography technological advancement. Nanoimprint machines target a semiconductor node width of 5 nanometers, aiming to reach 2 nm eventually. Takeishi said the technology has primarily resolved previous defect rate issues, but success will depend on convincing customers that integration into existing fabrication plants is worthwhile.

There is skepticism about Canon's ability to significantly disrupt the market led by ASML's expensive but sophisticated extreme ultraviolet (EUV) lithography tools. However, if nanoimprint can increase yields to nearly 90% at lower costs, it could carve out a niche, especially with EUV supply struggling to meet surging demand. Canon's NIL machines are supposedly 40% the cost of ASML machinery, while operating with up to 90% lower power draw. Initially focusing on 3D NAND memory chips rather than complex processors, Canon must contend with export controls limiting sales to China. But with few options left, Takeishi said Canon will "pay careful attention" to sanctions risks. If successfully deployed commercially after 15+ years in development, Canon's nanoimprint technology could shift the competitive landscape by enabling new players to manufacture leading-edge semiconductors at dramatically lower costs. But it remains to be seen whether the new machines' defect rates, integration challenges, and geopolitical headwinds will allow Canon to disrupt the chipmaking giants it aims to compete with significantly.

In addition to the 37 Gbps GDDR7 memory, Samsung Electronics prepares to showcase several other memory innovations at the 2024 IEEE-SSCC as compiled by VideoCardz. To begin with, the company is showcasing a new 280-layer 3D QLC NAND flash memory in the 1 Tb density, enabling next generation of mainstream SSDs and smartphone storage. This chip offers an areal density of 28.5 Gb/mm², and a speed of 3.2 GB/s. To put this into perspective, the fastest 3D NAND flash types powering the current crop of flagship NVMe SSDs rely on 2.4 GB/s of I/O data rates.

Next up, is a new generation DDR5 memory chip offers data rates of DDR5-8000 with a density of 32 Gbit (4 GB). This chip uses a symmetric-mosaic DRAM cell architecture, and is built on a 5th generation 10 nm class foundry node Samsung optimized for DRAM products. What's impressive about this chip is that it will allow PC memory vendors to build 32 GB and 48 GB DIMMs in single-rank configuration with DDR5-8000 speeds; as well as 64 GB and 96 GB DIMMs in dual-rank configuration (impressive, provided your platform can play well with DDR5-8000 in dual-rank).

MSI Spatium M580 Liquid Frozr is easily one of the most interesting SSDs we've come across in CES 2024. Picture this—an M.2-2280 SSD that has a self-contained liquid cooler, complete with a fan, radiator, a pump-block, and coolant channels. This is both cute and a little sad. M.2 SSDs were supposed to stay out of sight and be completely cable-free, like DIMMs. This isn't MSI's fault, they have to use the fastest controllers in the market, which are built on older 12 nm foundry nodes. PCI-Express 5.0 x4 is comparable bandwidth to PCI-Express 3.0 x16, and moving this kind of data is bound to generate heat for an SSD controller. Enough banter—the Spatium M580 uses the fastest Phison E26 Max14um controller, with Micron's fastest B58R 232-layer 3D NAND flash chips that deliver 2400 MT/s per flash channel.

The combination of Phison Max14um and B58R results in sequential transfer speeds beyond the 14 GB/s mark, which is where most PCIe Gen 5 x4 drives will end up accounting for the interface+protocol overhead. The theoretical max bandwidth of Gen 5 x4 is 16 GB/s. The drive comes in capacities of up to 4 TB. As for the cooler's design, the bare drive makes contact with a copper cold-plate, which has the block+reservoir, with a tiny pump. This sends coolant through a real aluminium heat-exchanger—this is probably the smallest radiator we've ever seen. The radiator is held up, a supporting structure has a tiny 20 mm lateral-flow fan, which blows air through the radiator. We can't wait to review this thing!

Global semiconductor capacity is expected to increase 6.4% in 2024 to top the 30 million *wafers per month (wpm) mark for the first time after rising 5.5% to 29.6 wpm in 2023, SEMI announced today in its latest quarterly World Fab Forecast report.

The 2024 growth will be driven by capacity increases in leading-edge logic and foundry, applications including generative AI and high-performance computing (HPC), and the recovery in end-demand for chips. The capacity expansion slowed in 2023 due to softening semiconductor market demand and the resulting inventory correction.

ADATA Industrial, the world's leading brand for industrial-grade embedded storage, officially released today its SATA 31D series of industrial-grade solid-state drives including 2.5-inch ISSS31D, M.2 2280 IM2S31D8, and M.2 2242 IM2S31D4, designed for retail terminals and embedded systems.

The SATA 31D series of industrial-grade SSDs utilize 112-layer 3D TLC flash memory developed by WDC, boasting a P/E Cycle of 3,000 which is comparable to MLC. The 31D series also offers a variety of ultra-thin and compact mainstream specifications such as SATA 2.5-inch, M.2 2280, M.2 2242, and various capacity options from 128 GB to 2 TB. 112-layer 3D NAND (BiCS5) 31D series SSDs all support thermal throttling technology, which reduces SSD transmission performance in stages to effectively mitigate the risk of data damage due to overheating. Furthermore, a LDPC ECC error correction mechanism and End-to-End Data Protection technology ensure reliable data transfer and improve data integrity. The 31D series is eminently suitable for POS systems, information kiosks, digital signage, and embedded equipment.

Chinese memory maker Yangtze Memory Technology Corp (YMTC) is allegedly preparing its next-generation Xtacking 4.0 3D NAND flash architecture for next-generation memory chips. According to the documentation obtained by Tom's Hardware, YMTC has developed two SKUs based on the upgraded Xtacking 4.0: X4-9060, a 128-layer three-bit-per-cell (TLC) 3D NAND, and the X4-9070, a 232-layer TLC 3D NAND. By using string stacking on both of these SKUs, YMTC plans to make the 3D NAND work by incorporating arrays with 64 and 116 active layers stacked on top of each other. This way, the export regulation rules from the US government are met, and the company can use the tools that are not under the sanction list.

While YMTC has yet to fully disclose the specific advantages of the Xtacking 4.0 technology, the industry anticipates significant enhancements in data transfer speeds and storage density. These improvements are expected to stem from increased plane counts for optimized parallel processing, refined bit/word line configurations to minimize latency, and the development of modified chip variants to boost production yields. When YMTC announced Xtacking 3.0, the company offered 128-layer TLC and 232-layer four-bit-per-cell (QLC) variants and was the first company to achieve 200+ layer count in the 3D NAND space. The Xtacking 3.0 architecture incorporates string stacking and hybrid bonding techniques and uses a mature process node for the chip's CMOS underlayer. We have to wait for the final Xtacking 4.0 details when YMTC's officially launches the SKUs.

Micron Technology, Inc. (Nasdaq: MU), today announced the availability of the Crucial T500 Gen 4 NVMe SSD as an expansion of its award-winning NVMe solid-state drive (SSD) portfolio. The Crucial T500 SSD is a best-in-class PCIe 4.0 NVMe drive, which leverages Micron's advanced 232-layer 3D NAND technology with industry-leading NAND I/O speeds of 2.4 gigabytes per second (GB/s) and is engineered to improve performance for console and PC gamers, photo and video editors and content creators. Available in two options, the T500 SSD with the heatsink is specifically designed for platforms like the PlayStation 5 (PS5) and PC gaming rigs, while the version without the heatsink fits well in laptops, desktops and workstations.

The T500 offers up to a 40% higher performance-to-power ratio, and speeds that are two times faster than the previous Gen 3 NVMe SSD offering. With lightning-fast sequential read and write speeds up to 7,400 MB/s and 7,000 MB/s respectively, Crucial T500 SSDs enable gamers to load games up to 16% faster, get quicker game texture renders and reduced CPU utilization with Microsoft DirectStorage. Likewise, it is easy to install and has up to 2 TB of storage - making it perfect for PS5 upgrades or UHD/8K+ videos. The T500 also delivers up to 42% faster performance in content creation applications, allowing users to run heavy workloads and render photos or videos faster.

Jung-Bae Lee, President and Head of Memory Business of Samsung Electronics, the world's largest NAND memory supplier, has noted in the blog post that Samsung plans to develop its 9th Generation V-NAND memory with over 300 layers, aiming for mass production in 2024. Samsung's V-NAND uses a double-stack structure and is expected to have more active layers than its competitors' 3D NAND memory, such as SK Hynix's forthcoming 321-layer memory. The increase in layers allows Samsung to enhance storage density and performance in its future 3D NAND devices, focusing on input/output (I/O) speed. While the specific performance details of Samsung's 9th Generation V-NAND remain undisclosed, the memory is expected to be used in next-generation PCIe SSDs with the PCIe 5.0 standard.

Jung-Bae Lee has noted: "New structural and material innovations will be critical in the upcoming era of sub-10-nanometer (nm) DRAM and 1,000-layer vertical V-NAND. As such, we are developing 3D stacked structures and new materials for DRAM while increasing layer count, decreasing height, and minimizing cell interference for V-NAND." The 9th installment of V-NAND, scheduled for 2024, is utilizing 11 nm-class DRAM. Additionally, the blog post reassures the commitment to CXL Memory Modules (CMM), which will enable the composable infrastructure of next-generation systems, especially with high-capacity SSDs powered by V-NAND.

Swissbit, a leading manufacturer of industrial-grade flash memory solutions, today announced the release of its new product line of SATA SSDs. The series X-73, X-75 and X-78 are powered by cutting-edge industrial 112-layer 3D NAND technology, bringing unprecedented reliability and extended lifespan to the world's most crucial networks. The latest portfolio is built with Swissbit's dedication to quality and innovation. The new portfolio not only offers reduced Total Cost of Ownership (TCO) thanks to its extended product life cycle, but also comes with powersafe SSDs - Swissbit's industry-leading power loss protection feature.

The expanded SSD product line includes M.2 2242, M.2 2280, Slim SATA MO-297, and 2.5" form factors, and offers a wide capacity range from 40 GB up to 1.92 TB. With an industry-leading 100k P/E cycles, the high endurance versions in pSLC mode are aimed at addressing the increasing market demand for durable and reliable data storage solutions.

Solidigm today announced the D7-5810, an enterprise SSD for extremely intensity write workloads. Such a drive would be capable of write endurance in the neighborhood of 50 DWPD. For reference, the company's D7-P5620, a write-centric/mixed workload drive for data-logging, and AI ingest/preparation, offers around 3 DWPD of endurance, depending on the variant; and the read-intensive drive meant for CDNs, the D5-P5336, offers around 0.5 DWPD. Use cases for the new D7-P5810 include high performance caching for flash arrays dealing with "cooler" data; high-frequency trading, and HPC.

Solidigm D7-P5810 uses SK hynix 144-layer 3D NAND flash that's made to operate in a pure SLC configuration. The drive comes in 800 GB and 1.6 TB capacities, and offers 50 DWPD over an endurance period of 5 years (4K random writes). More specifically, both models offer 73 PBW (petabytes written) of endurance. The drive comes in enterprise-relevant 15 mm-thick U.2 form-factor, with PCIe Gen 4 x4 interface, with NVMe 1.3c and NVMe MI 1.1 protocols.

KLEVV, an emerging memory brand introduced by Essencore today, is excited to unveil its latest M.2 Solid State Drive, the CRAS C910 Lite, packed with advanced specs for unparalleled performance. As a new addition to KLEVV's M.2 SSD lineup, the all-new CRAS C910 Lite utilizes PCI Express Gen 4 x4 interface supported by NVMe 1.4, ensuring lightning-fast data transfer rates excellent for competitive gaming and content creation.

Available in multiple storage capacities, including 500 GB, 1 TB, 2 TB, and 4 TB, the CRAS C910 Lite features strictly-selected 3D NAND Flash components, enabling impressive sequential read/write speeds of up to 5000/4200 MB/s and 4K Random Read/Write IOPS of up to 680,000/880,000.
A feather-light weight of a mere 7gram thanks to its revolutionary ultra-thin, single-sided SSD architecture based on the M.2 2280, the CRAS C910 Lite redefines compact performance, making it a perfect fit for a wide array of devices from nimble mini-PCs to sleek laptops.

It appears that Samsung is getting ready to beat SK Hynix in the race to 300 plus layers of NAND Flash, at least according to reports coming out of South Korea. The Seoul Economic Daily claims in an exclusive that Samsung will have a 300 plus layer V-NAND—(V for Vertical or 3D NAND—chip ready for production in 2024 and could as such beat SK Hynix by as much as a year, depending on how soon Samsung can deliver. Currently Samsung's most cutting edge stacked NAND is a 236-layer product, which is four more layers than Micron and YMTC, but two less than SK Hynix.

What sticks out in the Seoul Economic Daily news piece is that unlike SK Hynix, which is going for a triple stack sandwich, Samsung will apparently stick with two stacks. This means that Samsung is aiming for over 150-layers of NAND per stack, which seems like a big risk to take when it comes to yields. The taller the stacks, the bigger the chance of a failed stack, but maybe Samsung has found a solution around this potential issue. As modern 3D NAND relies on Through Silicon Vias, it's easier to manufacture denser stacks than in the past when wire bonding was used, but even so, this seems like a big risk for Samsung to take. That said, considering the current low demand and news of further cutbacks in production, it might be a good time for Samsung to utilise its fabs to test out this new, more densely stacked NAND to see if the company can mass produce it without issues. Samsung's roadmap calls for a 1000 plus layer V-NAND product by 2030, but it seems like the road there is still long and complicated.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced its participation at Flash Memory Summit 2023, taking place in person in Santa Clara, California, on August 8-10. CEO, Andy Hsu, will deliver a keynote address titled "New Architectures which will Drive Future 3D NAND and 3D DRAM Solutions" on August 9th at 11:40 a.m. Pacific Time.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. 3D X-DRAM can be manufactured using the existing 3D NAND flash memory process with minor changes, significantly reducing the time and cost spent developing a new 3D process. During the keynote, Mr. Hsu will reveal the 3D X-DRAM process flow and technical details.

Phison Electronics, a global leader in NAND controllers and storage solutions, announced today the expansion of its IMAGIN+ service to include AI computational models and AI services solutions. Phison's aiDAPTIV+ utilizes Phison's innovative integration of SSDs into the AI computing framework and expands NAND storage solutions in the AI application market. Phison has been a global leader deeply engaged in NAND controller innovations for more than 23 years. In recent years, the company has developed and integrated AI and machine learning technologies into NAND controllers and algorithms in order to enhance the computational performance and reliability of the company's NAND storage solutions.

Additionally, Phison has established a data science team, developed and deployed relevant AI technologies, and created a world-class validation laboratory. These efforts have accelerated the adoption of Phison's storage solutions in various applications, including PCs, mobile phones, automobiles, gaming platforms, enterprise data center & edge applications, supply chain logistics, and more. With the recent rise of large-scale generative AI models such as ChatGPT, the possibilities for artificial intelligence to assist both businesses and individuals in the future are significant. The rapid growth of AI models has also led to a significant increase in the hardware infrastructure cost associated with providing AI services.

Transcend Information (Transcend), a leading manufacturer of embedded memory products, is proud to release the latest U.2 NVMe SSD, the UTE210T. Designed for generative AI, high-performance computing (HPC), and big data analytics, this powerful SSD is built with the 112-layer 3D NAND flash, an 8-channel controller, and a PCIe Gen 4x4 interface. Experience high speeds, low latency, and minimal power consumption with your systems, but most of all, enjoy sequential R/W speeds of up to 7,200/6,500 MB/s and stable and reliable system performance that supports various applications of use.

Compliant with the NVMe 1.4 specification, Transcend's UTE210T comes bundled with a U.2 connector, enabling the drive to configure the PCIe interface with the U.2 backplane, ultimately enhancing transfer stability without compromising your servers. To address the demanding workloads associated with AI, its built-in DRAM provides exceptional random read speeds, which not only reduces NAND flash Program/Erase cycles (P/E cycles), but effectively extends drive lifespan to help manage a wide range of workloads. The UTE210T comes with up to 8 TB of storage capacity, ensuring servers and data centers are able to process vast amounts of data without compromising system performance.

In the world of modern embedded computing, motherboards and systems are equipped with numerous M.2 and Mini-PCI Express sockets. These sockets provide ideal homes for networking communication adapters and solid-state drives (SSDs), including NVMe-compatible SSDs. With an abundance of sockets, embedded systems now have unparalleled connectivity and storage options.

Cervoz recognizes this need and introduces a new industrial SSD perfectly suited for these boards and systems: the M.2 2242 PCIe Gen 3 x 2 (B+M Key) SSD, T421. This SSD is designed specifically for embedded motherboards and systems, making it a perfect fit for industrial applications ranging from retail and gaming solutions to embedded computing devices.