Thursday, September 10th 2026
Kepler Computing Emerges to Build HBM Alternative Using FeRAM
After seven years of operating in stealth mode, a new startup called Kepler Computing has emerged to address the memory crisis using a custom memory technology. The startup claims to have developed an alternative to HBM using a new 3D stacking technique and novel materials, all without relying on cutting-edge semiconductor nodes. Kepler reportedly plans to use ferroelectric RAM (FeRAM). This use of FeRAM is said to allow Kepler to maintain the standard HBM capacity while significantly reducing manufacturing costs. The company has reportedly overcome many challenges in scaling production and has undergone 35 iterations of composites before settling on a single scalable design.
While modern memory production typically requires EUV lithography, Kepler intends to use existing mature nodes to manufacture HBM and SRAM using FeRAM. In early collaborations with GlobalFoundries, Kepler managed to convert a standard 28 nm manufacturing facility into a memory fab in just eight months, which is significantly faster than the typical 24-month lead time for traditional DRAM. Currently, the company has processed about 2,000 wafers of the new DRAM technology, with the first HBM samples expected to arrive later this year. For full-scale volume manufacturing, the company aims to begin production runs at GlobalFoundries' Singapore facility next year, with manufacturing in the United States slated to start in 2028.The company has also raised significant funds, securing about $468 million in funding over the past few years from GlobalFoundries, as well as two silicon giants, Intel Capital and AMD Ventures, who are likely to be future customers. Some skepticism remains, as many memory startups have emerged but struggled to achieve yield and technology viability. If Kepler has truly overcome these technical challenges, we hope to see the first HBM-like chips and their density, bandwidth, and other specifications soon.
Source:
Wired
While modern memory production typically requires EUV lithography, Kepler intends to use existing mature nodes to manufacture HBM and SRAM using FeRAM. In early collaborations with GlobalFoundries, Kepler managed to convert a standard 28 nm manufacturing facility into a memory fab in just eight months, which is significantly faster than the typical 24-month lead time for traditional DRAM. Currently, the company has processed about 2,000 wafers of the new DRAM technology, with the first HBM samples expected to arrive later this year. For full-scale volume manufacturing, the company aims to begin production runs at GlobalFoundries' Singapore facility next year, with manufacturing in the United States slated to start in 2028.The company has also raised significant funds, securing about $468 million in funding over the past few years from GlobalFoundries, as well as two silicon giants, Intel Capital and AMD Ventures, who are likely to be future customers. Some skepticism remains, as many memory startups have emerged but struggled to achieve yield and technology viability. If Kepler has truly overcome these technical challenges, we hope to see the first HBM-like chips and their density, bandwidth, and other specifications soon.

18 Comments on Kepler Computing Emerges to Build HBM Alternative Using FeRAM
I get that FeRAM can be advantageous for HBM, but then free-up the other lines to make DDR5(X) for the rest of us.
Also, haven't heard of GlobalFoundries for a while now. Nice to know those guys are still around and getting contracts.
If I go to the professional/enterprise market, I have plenty of options, but they are also costing considerably for what I would use them for in a personal environment.
From what we read they will either create new line or use old one that are underutilized (I don't think the 20-28nm line are running at full capacity right now)
That would be the end of NAND.
FRAM is an EEPROM tech, same as Flash memory. It depends on shifting atoms.
However, I did find that FeRAM has limited endurance, but it's on the order of 10^15 read-write cycles at the upper end. I'm pretty sure that's well within the "device will be obsolete long before the cells wear out" territory.