Global memory brand Team Group announced the launch of its updated ELITE memory modules with enhanced frequencies today: the ELITE PLUS DDR5 and ELITE DDR5 Desktop Memory 6400 MHz (1.1 V CL52-52-52-103). Both comply with JEDEC memory standards and fulfill the needs of demanding applications and high-performance computing.

In response to the growing demand for high-speed computing and digital technology, Team Group has introduced the upgraded ELITE PLUS DDR5 6400 MHz and ELITE DDR5 6400 MHz memory modules, which boast higher frequencies and low power consumption. The updated specs of the ELITE memory fully meet the needs of learning, entertainment, and more on desktop computers. With the modules' low operating voltage of 1.1 V, power consumption is significantly reduced, and the computer's lifespan is extended. In addition, DDR5's Same-Bank Refresh feature and optimized IC structure can process the double amount of data simultaneously compared to DDR4, which enables computers to operate more smoothly while multi-tasking and significantly improves operating efficiency.

GIGABYTE TECHNOLOGY Co. Ltd, a leading manufacturer of motherboards, graphics cards, and hardware solutions, is pleased to announce its close collaboration with HWiNFO, a comprehensive system information and diagnostic tool. This partnership aims to enhance the accuracy of hardware information and diagnostics, while introducing innovative features to benefit computer enthusiasts and professionals alike.

HWiNFO, known for its detailed system information and diagnostic capabilities, has partnered with GIGABYTE to integrate their technologies and deliver more precise and comprehensive hardware information to users. By combining GIGABYTE's expertise in hardware manufacturing and HWiNFO's advanced diagnostics, users can now access a wealth of information about their computer components with unparalleled accuracy.

Samsung Electronics today reported financial results for the second quarter ended June 30, 2023. The Company posted KRW 60.01 trillion in consolidated revenue, a 6% decline from the previous quarter, mainly due to a decline in smartphone shipments despite a slight recovery in revenue of the DS (Device Solutions) Division. Operating profit rose sequentially to KRW 0.67 trillion as the DS Division posted a narrower loss, while Samsung Display Corporation (SDC) and the Digital Appliances Business saw improved profitability.

The Memory Business saw results improve from the previous quarter as its focus on High Bandwidth Memory (HBM) and DDR5 products in anticipation of robust demand for AI applications led to higher-than-guided DRAM shipments. System semiconductors posted a decline in profit due to lower utilization rates on weak demand from major applications.

Micron Technology, Inc. today announced it has begun sampling the industry's first 8-high 24 GB HBM3 Gen2 memory with bandwidth greater than 1.2 TB/s and pin speed over 9.2 Gb/s, which is up to a 50% improvement over currently shipping HBM3 solutions. With a 2.5 times performance per watt improvement over previous generations, Micron's HBM3 Gen2 offering sets new records for the critical artificial intelligence (AI) data center metrics of performance, capacity and power efficiency. These Micron improvements reduce training times of large language models like GPT-4 and beyond, deliver efficient infrastructure use for AI inference and provide superior total cost of ownership (TCO).

The foundation of Micron's high-bandwidth memory (HBM) solution is Micron's industry-leading 1β (1-beta) DRAM process node, which allows a 24Gb DRAM die to be assembled into an 8-high cube within an industry-standard package dimension. Moreover, Micron's 12-high stack with 36 GB capacity will begin sampling in the first quarter of calendar 2024. Micron provides 50% more capacity for a given stack height compared to existing competitive solutions. Micron's HBM3 Gen2 performance-to-power ratio and pin speed improvements are critical for managing the extreme power demands of today's AI data centers. The improved power efficiency is possible because of Micron advancements such as doubling of the through-silicon vias (TSVs) over competitive HBM3 offerings, thermal impedance reduction through a five-time increase in metal density, and an energy-efficient data path design.

SK hynix Inc. today reported financial results for the second quarter of 2023. The company recorded revenue of 7.306 trillion won, operating loss of 2.882 trillion won (with operating margin of negative 39%), and net loss of 2.988 trillion won (with net margin of negative 41%) for the three-month period ended June 30, 2023.

"Amid an expansion in generative artificial intelligence (AI) market, which has largely been centered on ChatGPT, demand for AI server memory has increased rapidly," the company said. "As a result, sales of premium products such as HBM3 and DDR5 increased, leading to a 44% sequential increase in revenue for the second quarter, while operating loss narrowed by 15%."

According to news out of Korea, NVIDIA is considering Samsung as a partner not only for HBM3 memory, but also as a potential partner when it comes to 2.5D chip packaging. The latter is due to TSMC having limited capacity when it comes to handling all of its customers advanced chip packaging needs, although Samsung is apparently not the only potential partner NVIDIA is looking at. Taiwan based SPIL and US based Amkor Technology are two alternative candidates for the 2.5D chip packaging according to the Elec.

As far as HBM3 memory goes, NVIDIA doesn't have as many potential options, with SK Hynix being its current partner, who NVIDIA will continue to work with when it comes to HBM memory for its high-end AI accelerators and GPUs. It's likely that Samsung is trying to win NVIDIA back as a foundry customer, by proving that it's capable of handling the chip packaging for NVIDIA. Samsung will likely use its I-Cube 2.5D packaging technology and the Elec suggests that Samsung would still be using TSMC made GPU wafers which will be mated with Samsung HMB3 memory. Samsung has as yet not started its mass production of HMB3 memory, but have sampled customers with evaluation samples that are said to have received very positive feedback. For now, nothing has been agreed and TSMC is, as we know, looking to expand its 2.5D packaging business by over 40 percent, but the question is how quickly TSMC can move before its customers consider other competitors.

Samsung on Wednesday announced mass-production of the world's first next-generation GDDR7 memory chips, and Ryan Smith from AnandTech scored a few technical details from the company. Apparently, the company's first production version of GDDR7 memory is built on the same D1z silicon foundry node as its 24 Gbps GDDR6 memory chip—the fastest GDDR6 chip in production. D1z is a 10 nm class foundry node that utilizes EUV lithography.

Smith also scored some electrical specs. The first-gen GDDR7 memory chip offers a data-rate of 32 Gbps at a DRAM voltage of 1.2 V, compared to the 1.35 V that some of the higher speed GDDR6 chips operate at. While the pJpb (pico-Joules per bit) is 7% higher than the current generation in absolute terms, for the 32 Gbps data-rate on offer, it is 20% lower compared to that of the 24 Gbps GDDR6 chip. Put simply, GDDR7 is 20% more energy efficient. Smith remarks that this energy-efficiency gain is purely architectural, and isn't a from any refinements to the D1z node. GDDR7 uses PAM3 signaling compared to the NRZ signaling of conventional GDDR6, and the PAM4 signalling of the GDDR6X non-JEDEC standard that NVIDIA co-developed with Micron Technology.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that it has completed development of the industry's first Graphics Double Data Rate 7 (GDDR7) DRAM. It will first be installed in next-generation systems of key customers for verification this year, driving future growth of the graphics market and further consolidating Samsung's technological leadership in the field.

Following Samsung's development of the industry's first 24 Gbps GDDR6 DRAM in 2022, the company's 16-gigabit (Gb) GDDR7 offering will deliver the industry's highest speed yet. Innovations in integrated circuit (IC) design and packaging provide added stability despite high-speed operations. "Our GDDR7 DRAM will help elevate user experiences in areas that require outstanding graphics performance, such as workstations, PCs and game consoles, and is expected to expand into future applications such as AI, high-performance computing (HPC) and automotive vehicles," said Yongcheol Bae, Executive Vice President of Memory Product Planning Team at Samsung Electronics. "The next-generation graphics DRAM will be brought to market in line with industry demand and we plan on continuing our leadership in the space."

The leading memory brand Team Group has upgraded the capacities of its industrial DDR5 series memory products, by leveraging its outstanding R&D and product design capabilities, taking the lead in launching a 48 GB module, as well as a lower 24 GB option. The capacity upgrades apply to all types of DDR5 products, including the DDR5 non-ECC U/SO-DIMM, DDR5 ECC U/SO-DIMM class, and DDR5 ECC R-DIMM memory modules. They provide higher capacity for applications using high-performance edge computing, embedded computers, personal workstations, and more.

Current industrial DDR5 memory on the market has a maximum capacity of about 32 GB per module. However, with the development of technologies such as cloud, edge computing, the Internet of Things, and big data, the demand for memory capacity is increasing. Edge computing systems need to process large amounts of data from a variety of sensors and devices and perform complex calculations and analyses that require high memory capacity and performance. To meet this demand, Team Group has made capacity upgrades across its industrial DDR5 memory products, offering new 24 GB and 48 GB modules. They bring more application flexibility and enable users to better handle large data sets, complex simulations, and analysis tasks. The enhanced capacities will significantly increase the performance and processing power of edge computing systems, providing users with the ability to run various applications and algorithms more efficiently.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that it has initiated mass production of its new automotive Universal Flash Storage (UFS) 3.1 memory solution optimized for in-vehicle infotainment (IVI) systems. The new solution offers the industry's lowest energy consumption, enabling car manufacturers to provide the best mobility experience for consumers.

The UFS 3.1 lineup will come in 128, 256 and 512-gigabyte (GB) variants to meet different needs of customers. The enhanced lineup allows more efficient battery life management to future automotive applications such as electric or autonomous vehicles. The 256 GB model, for instance, has reduced its energy consumption by about 33% compared to the previous generation product. The 256 GB model also provides a sequential write speed of 700-megabytes-per-second (MB/s) and a sequential read speed of 2,000 MB/s.

TechPowerUp, your place on the web for in-depth PC hardware reviews and enthusiast news, is looking for a desktop motherboard reviewer. Our current reviewer, ir_cow, is going to focus on DRAM module reviews exclusively. The motherboard reviewer job requires a high level understanding of the layout and workings of modern motherboards, including detailed technical photography of its various onboard devices, VRM, memory, commentary on layout and ease-of-installation/use, as well as performance benchmarks, and overclocking capabilities.

We expect our potential motherboard reviewer to be able to identify key components of the motherboard, the various controllers, VRM, PHYs, and chipset; the expansion slot layout and the way PCIe lanes are distributed across the motherboard; and other important aspects, such as the motherboard's own cooling mechanisms. You also need a solid grasp on memory timings, and tuning for a given platform, and the willingness to explore and learn. Our performance testing involves not just the CPU performance on a given motherboard, but also that of certain onboard devices, such as audio, and those of storage interfaces. Some of our recent motherboard reviews should give you a good idea of our review format, article structure, and the testing involved.

In July 2022, Intel announced that the company was winding down its Optane division, effectively discontinuing the development of 3D XPoint memory that it has been marketing for a long time. Once viewed as a competitive advantage, the support for Optane has been removed from future platforms. However, Intel has announced plans to extend Optane shipments by another quarter amidst additional stock or significant demand from customers buying Optane DIMMs for their enterprises. Initially set to ship the final Optane Persistent Memory 100-series DIMMs on September 30, Intel extends this date by three months to December 29, 2023.

Intel states, "Customers are recommended to secure additional Optane units at the specified 0.44% annualized failure rate (AFR) for safety stock. Intel will make commercially reasonable efforts to support last time order quantities for Intel Optane Persistent Memory 100 Series."

Last week Micron Technology CEO, Sanjay Mehrotra, announced during an investors meeting that the company's next generation GPU memory—GDDR7—will be arriving next year: "In graphics, industry analysts continue to expect graphics' TAM compound annual growth rate (CAGR) to outpace the broader market, supported by applications across client and data center. We expect customer inventories to normalize in calendar Q3. We plan to introduce our next-generation G7 product on our industry-leading 1ß node in the first half of calendar year 2024." His proposed launch window seems to align with information gleaned from previous reports—with NVIDIA and AMD lined up to fit GDDR7 SGRAM onto their next-gen mainstream GPUs, although Team Green could be delaying their Ada Lovelace successor into 2025.

Micron already counts these big players as key clients for its current GDDR6 and GDDR6X video memory offerings, but Samsung could be vying for some of that action with its own GDDR7 technology (as announced late last year). Presentation material indicated that Samsung is anticipating data transfer rates in the range of 36 Gbps, with usage of PAM3 signalling. Cadence has also confirmed similar numbers for its (industry first) GDDR7 verification solution, but the different encoding standard will require revising of memory controllers and physical interfaces.

High Bandwidth Memory (HBM) is emerging as the preferred solution for overcoming memory transfer speed restrictions due to the bandwidth limitations of DDR SDRAM in high-speed computation. HBM is recognized for its revolutionary transmission efficiency and plays a pivotal role in allowing core computational components to operate at their maximum capacity. Top-tier AI server GPUs have set a new industry standard by primarily using HBM. TrendForce forecasts that global demand for HBM will experience almost 60% growth annually in 2023, reaching 290 million GB, with a further 30% growth in 2024.

TrendForce's forecast for 2025, taking into account five large-scale AIGC products equivalent to ChatGPT, 25 mid-size AIGC products from Midjourney, and 80 small AIGC products, the minimum computing resources required globally could range from 145,600 to 233,700 Nvidia A100 GPUs. Emerging technologies such as supercomputers, 8K video streaming, and AR/VR, among others, are expected to simultaneously increase the workload on cloud computing systems due to escalating demands for high-speed computing.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is excited to announce a new white colored edition of its flagship Trident Z5 RGB series DDR5 memory, featuring extreme overclocked speeds of up to DDR5-8200 at 24 GB x 2 kit capacity.

The White Choice of Overclocked Performance DDR5 Memory
The new white version of the Trident Z5 RGB series boasts a sleek white aluminium heat spreader and features a black brushed-aluminium strip inset across the center, providing PC enthusiasts an ideal high-performance overclocked memory kit in a white themed PC build.

NVIDIA's compute and AI-oriented H100 GPU is supposedly getting an upgrade. The H100 GPU is NVIDIA's most powerful offering and comes in a few different flavors: H100 PCIe, H100 SXM, and H100 NVL (a duo of two GPUs). Currently, the H100 GPU comes with 80 GB of HBM2E, both in the PCIe and SXM5 version of the card. A notable exception if the H100 NVL, which comes with 188 GB of HBM3, but that is for two cards, making it 94 GB per each. However, we could see NVIDIA enable 94 and 64 GB options for the H100 accelerator soon, as the latest PCI ID Repository shows.

According to the PCI ID Repository listing, two messages are posted: "Kindly help to add H100 SXM5 64 GB into 2337." and "Kindly help to add H100 SXM5 94 GB into 2339." These two messages indicate that NVIDIA could prepare its H100 in more variations. In September 2022, we saw NVIDIA prepare an H100 variation with 120 GB of memory, but that still isn't official. These PCIe IDs could just come from engineering samples that NVIDIA is testing in the labs, and these cards could never appear on any market. So, we have to wait and see how it plays out.

Lam Research Corp. (Nasdaq: LRCX) today introduced Coronus DX, the industry's first bevel deposition solution optimized to address key manufacturing challenges in next-generation logic, 3D NAND and advanced packaging applications. As semiconductors continue to scale, manufacturing becomes increasingly complex with hundreds of process steps needed to build nanometer-sized devices on a silicon wafer. In a single step, Coronus DX deposits a proprietary layer of protective film on both sides of the wafer edge that helps prevent defects and damage that can often occur during advanced semiconductor manufacturing. This powerful protection increases yield and enables chipmakers to implement new leading-edge processes for the production of next-generation chips. Coronus DX is the newest addition to the Coronus product family and extends Lam's leadership in bevel technology.

"In the era of 3D chipmaking, production is complex and costly," said Sesha Varadarajan, senior vice present of the Global Products Group at Lam Research. "Building on Lam's expertise in bevel innovation, Coronus DX helps drive more predictable manufacturing and significantly higher yield, paving the way for adoption of advanced logic, packaging and 3D NAND production processes that weren't previously feasible."

Neo Forza, a Taiwanese brand entity under Goldkey Technology Corporation, had a booth at Computex 2023, where the company showed its next-generation memory and storage products. Starting off, the company presented its DDR5 memory kits running at 8000 MHz speeds, indicating the maturity of DDR5 and that we are way past the initial 4800 MHz speeds at launch. The demonstrated kit was a part of the company's TRINITY lineup, which was displayed in white. For demo purposes, the kit was configured as two 16 GB DIMMs.

Next up, Neo Forza has showcased its next-generation PCIe Gen 5 NVMe SSD. Running at x4 lanes of the new PCIe 5.0 protocol, the 2 TB SSD was spotted running at 10 GB/s speeds in both read and write tasks set by CrystalDiskMark benchmark. Interestingly, the SSD also boasted a massive heatsink, as shown below.

Transcend brought its latest flash storage and PC memory products to Computex 2023. The company, much like Kingston and Micron, appears to be focusing on the high-volume mid-range of the market that it can sell both in the retail channel and to OEMs, without too much invested on niche high-end ones. To begin with, the company showed us its DDR5 UDIMMs and RDIMMs. Nothing flashy—these stick with JEDEC-standard speeds, such as DDR5-5600 (13th Gen native speed), and DDR5-4800.

The company doesn't have PCIe Gen 5 SSDs yet, but we were shown a handful Gen 4 ones meant for the DIY retail channel, including the PCIe SSD 250H (MTE250H), with its sporty heatsink, and extensive testing for PlayStation 5 compatibility; and its alter-ego without the heatsink, the PCIe SSD 250S (MTE250S). These drives come in capacities ranging between 1 TB to 4 TB, with sequential transfer speeds of up to 7.5 GB/s reads, and up to 6.7 GB/s writes. Also shown were a set of smaller NVMe Gen 3 SSDs in the M.2-2230 and M.2-2260 form-factors, the MTE300S and MTE400S, respectively. With capacities of just 256 GB and 512 GB for the MTE300S, and 256 GB thru 1 TB for the MTE400S, these drives are probably meant for hand-held game consoles, or low-cost desktop PCs, where OEMs or SIs buy them in large quantities.

Anacomda, a Taiwanese memory, storage, and accessories maker, had a booth at Computex 2023, where the company presented the new DDR5 memory kits with speeds ranging up to 7000 MHz. Starting off, we have the model called "Standard," which is just a standard DDR5 UDIMM memory kit available as 8 and 16 GB DIMM, in 2x 8 GB and 2x 16 GB capacities. Running at 4800 MHz, the standard kit has a CAS latency of 40, with a running voltage set to 1.1 Volts. Next is the KingSnake Overclocking UDIMM, which is, as the name suggests, a kit optimized for overclocking. Available in frequencies of 5600/6000/6200/7000 MHz, these memory modules run at 1.25 or 1.45 Volts at CAS latencies of 40 and 36. They also come in 16 GB and 32 GB capacities.

Last but not least, there is an ET (EryxTataricus) unbuffered UDIMM kit that is basically an RGB version of KingSnake, with all the same features except the inclusion of RGB lighting capable of syncing with all modern motherboard RGB software.

Essencore KLEVV brought in a formidable lineup of new PCIe Gen 5 NVMe SSDs and DDR5 memory for gamers and overclockers, at the 2023 Computex. The lineup is led by the KLEVV CRAS V RGB series of DDR5 memory that comes in high-end speeds of DDR5-6000 (30-36-36-76 @ 1.35 V), DDR5-6400 (32-38-38-78 @ 1.35 V), DDR5-7200 (34-44-44-84 @ 1.40 V), DDR5-7600 (36-46-46-86 @ 1.40 V), and DDR5-8000 (38-48-48-128 @ 1.55 V). These modules feature both Intel XMP 3.0 and AMD EXPO SPD profiles. The KLEVV BOLT V series form the company's mid-range, offering speeds of DDR5-6000 (30-36-36-76 @ 1.35 V), DDR5-6400 (32-38-38-78 @ 1.35 V), and DDR5-6800 (34-40-40-80 @ 1.35 V). Both XMP 3.0 and EXPO are to be found even with these modules. The company interestingly also has standard modules for DDR5-4800 and DDR5-5600, which make do with just 1.1 V. We also spied KLEVV's odd-capacity 24 GB and 48 GB CRAS V RGB modules.

The storage lineup for Essencore is led by the KLEVV CRAS C950 PCIe Gen 5 NVMe SSD, and the CRAS C910 Gen 4 SSD. The CRAS C950 comes in 1 TB, 2 TB, and 4 TB capacities, and uses a Phison E26-series controller paired with 3D TLC NAND flash. The 1 TB variant offers up to 11.5 GB/s sequential reads, with up to 8.5 GB/s sequential writes, while the 2 TB and 4 TB models do up to 12 GB/s sequential reads, with up to 11 GB/s sequential writes. The drive uses a chunky passive aluminium heatsink to keep cool. The CRAS C910, on the other hand, comes both as a bare drive (without heatsink), and as the CRAS C910 RGB, where it features a heatsink with an RGB diffuser. The drive uses an InnoGrit IG5220 controller, comes in capacities of up to 1 TB, and offers speeds of up to 5 GB/s sequential reads, with up to 4.8 GB/s sequential writes.

Continuing to move Universal Flash Storage (UFS) technology forward, KIOXIA America, Inc. today announced sampling of new, higher performing UFS Ver. 4.0 embedded flash memory devices. These devices deliver fast embedded storage transfer speeds in a small package size and are targeted to a variety of next-generation mobile applications, including leading-edge smartphones. The improved performance of UFS products from KIOXIA enables these applications to take advantage of 5G's connectivity benefits, leading to faster downloads, reduced lag time and an improved user experience.

UFS Ver. 4.0 devices from KIOXIA integrate the company's innovative BiCS FLASH 3D flash memory and a controller in a JEDEC-standard package. UFS 4.0 incorporates MIPI M-PHY 5.0 and UniPro 2.0 and supports theoretical interface speeds of up to 23.2 gigabits per second (Gbps) per lane or 46.4 Gbps per device. UFS 4.0 is backward compatible with UFS 3.1.

Team Group unveiled its mighty Team Xtreem DDR5 memory for overclocking, at the 2023 Computex. These modules are designed such that their PCBs are shorter than their height, and instead of cramming RGB LEDs on top, the 2 mm-thick aluminium heat spreader turns into an extruded heatsink. Some of the higher speed versions of these run at DRAM voltages as high as 1.45 V, so the heatsink design should come in handy. The T-Force Xtreem comes in speeds ranging between DDR5-6400 and DDR5-8266, and in capacities ranging from 16 GB (2x 8 GB), going all the way up to 96 GB (2x 48 GB). The T-Force Xtreem RGB has an additional design element in the form of an acrylic RGB LED diffuser, although from the looks of it, this acrylic bit seems to be covering the fins of the heat spreader. It comes in the same speed-based and capacity based variants, as the regular Xtreem DDR5.

At the 2023 Computex, we caught CORSAIR's flagship PC memory line, the DOMINATOR Titanium DDR5 series. These are built to, well, dominate the overclocking and benchmark records scene, and come in several high-speed models, such as DDR5-8000 and DDR5-8266, and capacities as high as 192 GB (4x 48 GB kits). The company also has a limited batch of 500 "First Edition" kits, which feature a gold-on-white color scheme, and the company's highest grade of manual binning.

A defining feature about the DOMINATOR Titanium DDR5 series is their heat spreader design, which consists of 2 mm-thick aluminium making contact with the DRAM chips, which connect to an upper copper heatsink with RGB LEDs studded. The edges of the top have mount-holes, so a set of 2 or 4 of these DIMMs can be bolted onto the company's latest DHX cooling module. This is essentially a chunky slab of anodized aluminium that soaks up and dissipates heat from the DIMMs, and has slats that let the RGB lighting through. CORSAIR is backing these with lifetime warranties, and plans to launch them in July 2023.

CORSAIR, a world leader in enthusiast components for gamers, creators, and PC builders, today announced the latest addition to its award-winning memory line-up, DOMINATOR TITANIUM DDR5 memory. Built using some of the fastest DDR5 ICs alongside patented CORSAIR DHX cooling technology for improved overclocking potential, DOMINATOR TITANIUM continues the DOMINATOR legacy with stunning design and blazing performance.

Sporting an elegant, fresh new design and built using premium materials and components, DOMINATOR TITANIUM DDR5 memory will be available for both Intel and AMD platforms, supporting Intel XMP 3.0 when paired with 12th and 13th-Gen Core processors or AMD EXPO for Ryzen 7000 CPUs. These technologies enable easy overclocking in just a couple of clicks on compatible platforms.