NVIDIA has reportedly notified its add-in card partners of another GPU kit price increase, this time covering both GDDR7 and GDDR6 memory. This means the raise isn't limited to current Blackwell cards and could affect older GeForce products still using GDDR6 as well. The report comes from BenchLife via VideoCardz and follows a similar price adjustment for the RTX 5090 and RTX 5090D V2 back in May. NVIDIA supplies board partners with GPU and VRAM bundled together as a kit, so when memory costs go up, AIBs have little choice but to pass that along to retail pricing. BenchLife notes that partners are also seeing higher costs for coolers, PCBs, and packaging on top of the memory increases, though those secondary cost pressures are described as smaller than the memory-related ones.

The RTX 50 SUPER series is also affected by this. We've previously reported that those cards are on hold partly due to the cost of 3 GB GDDR7 modules. Inside sources say that each of those GDDR7 modules costs about $60-$70, roughly three times the cost of a 2 GB module at around $20. This adds a significant price premium on SUPER cards since the RTX 5070 SUPER was expected to be upgraded to offer 18 GB, while the RTX 5070 Ti SUPER and RTX 5080 SUPER would each provide 24 GB of GDDR7 memory. GPU prices have already increased 20-30% above where they were not long ago, and this latest round of kit price increases suggests there's more pressure to come. Previous-gen cards that use GDDR6 have been less affected up to now, but that appears to be changing.

NVIDIA has released a technical details on its next-generation "Rubin" GPU, including a fully annotated die shot. "Rubin" represents a significant generational leap in NVIDIA's mission to scale computing across numerous racks, systems, and data centers. The company is promoting this generation as the first "agentic AI" native design. This AI paradigm means that inference workloads are continuously active, engage in reasoning, planning, tool utilization, and execute many sequential steps. In this context, inference refers to a completed model running on the GPUs, rather than being trained, which is what Rubin is designed for. NVIDIA claims up to 10x more agentic throughput per unit of energy compared to "Blackwell." This improvement relies not only on the new "Vera" CPU and rack-level power management but also on the entire system, as customers now prioritize overall system performance rather than just the performance of a single GPU.

In its full configuration, "Rubin" combines two compute dies in a single package, linked with a high-speed connection that NVIDIA calls NV-HBI. This chiplet approach uses CoWoS-L packaging from TSMC, chosen because each die is already as large as the chip factory can print in one go, reaching the reticle limit. The GPU contains 336 billion transistors, up to 224 SMs, 896 Tensor Cores with a third-generation Transformer Engine, and 288 GB of HBM4 memory, capable of delivering up to 50 PetaFLOPS of inference and about 35 PetaFLOPS of training at the ultra-compact NVFP4 format. This is NVIDIA's proprietary 4-bit data format that enhances efficiency in inference and training with minimal to no accuracy loss compared to the 8-bit and 16-bit data formats used today for training and inference. However, this is quite different from the FP16/FP32 formats used in gaming GPUs. Below, we will break down not just the GPU, but the entire platform NVIDIA has built around it.

NVIDIA today provided more details about its latest custom Armv9.2 "Vera" CPU, which the company describes as a pinnacle of its CPU engineering. Designed to coexist within NVL rackscale systems or operate independently, NVIDIA has seen significant interest from its customers in deploying the "Vera" CPU across enterprises. The company optimized its design for data analysis, high-performance single-threaded tasks, agentic AI, and large-scale software operations, covering a wide range of use cases. The entire "Olympus" CPU core is divided into four major areas: front end, mid-core, execution engine, and cache subsystems. In the front end, NVIDIA has developed a branch predictor that works actively with the instruction fetching unit to keep the core supplied with useful instructions. Tasks such as agent runtimes, compilers, and large data processing workloads often involve control-flow changes, which can leave execution units in the CPU idle. The "Olympus" core uses a 10-wide decode engine to ensure a continuous flow of instructions to execution units, keeping them fully utilized. To prepare the data path for execution, NVIDIA created a neural branch predictor that reduces the execution of incorrect paths, supporting up to two taken branches per cycle. This is crucial for control-flow changes when software execution on large data processing suddenly shifts.

Since the launch of the Steam Machine, which has been blasted online for its high pricing and middling performance, Valve has been fairly transparent about pricing woes relating to the hybrid console, with engineers previously going so far as to say that pricing before the AI-fuelled RAMpocalypse was as much as 30% cheaper than launch pricing, and that the light at the end of the tunnel is faint.

More recently, in a new interview with Bloomberg, Valve engineers Pierre-Loup Griffais and Yazan Aldehayyat, have once again reiterated that pricing of the Steam Machine, and hardware in general, "is lagging what we're seeing from a bulk supply by at least three to six months." In other words, the pricing for the Steam Machine and other PC components that have been impacted by the RAM crisis in mid-July are, at best, prices from February. If true, it also means that Valve effectively has a bit of clairvoyance when it comes to hardware pricing, as one would when working closely with suppliers, and the engineers only see it getting worse, at least for the next three to six months.

SK Group Chairman Chey Tae-won has come out with unusually direct comments on memory pricing, calling current semiconductor prices "abnormally high" and warning that the situation risks creating what he termed "chipflation", where rising chip costs push up finished product prices for consumers. Speaking at the Korea Chamber of Commerce and Industry Summer Forum in Jeju on July 15, Chey argued that supply needs to increase even if it means lower margins for semiconductor companies. His reasoning: AI companies can absorb higher costs, but PC and smartphone makers have a limited ability to pass those costs on to individual consumers. If prices keep climbing, the market shrinks and new players move in, an outcome he sees as bad for the South Korean semiconductor industry in the long term. The struggle is real, as is the threat from new competitors, as shortages at Samsung, SK hynix, and Micron have forced major PC OEMs to lock in DRAM supply deals with the Chinese memory producer CXMT.

On the supply side, the picture doesn't look like it's getting better soon. Chey predicted AI semiconductor demand could surge 60-100% next year, while production from major suppliers will not increase significantly. Since AI-related demand now accounts for over half the total semiconductor market, he expects overall demand to rise by at least 50-60% against a supply that is not keeping pace. "No company is significantly increasing supply next year; it's so dire I don't know if I should describe it as chaotic," he said. According to The Chosun Daily, Chey confirmed that SK hynix is looking at building a semiconductor factory in the United States. These plans could significantly expand SK hynix's US footprint. The company is already investing approximately $4 billion to build advanced packaging R&D facilities and HBM production lines in West Lafayette, Indiana. Construction began in 2026 and the site is scheduled to be operational by the second half of 2028. However, he also said that the company is currently looking for possible locations globally, prioritizing sites based on speed, scale and feasibility. No specific location or timeline was given.

Major PC OEMs are beginning to secure deals with Chinese memory maker CXMT, as the supply chain has been depleted of available DRAM from the big three memory makers—SK hynix, Samsung, and Micron. According to a report from DigiTimes, CXMT's memory capacity has been booked through the end of 2027, leaving little room for new customers to source DRAM from China's largest memory producer. The report notes that large PC vendors such as Dell, HP, and Apple are the only ones that managed to receive allocations, while smaller brands with less presence in the desktop and laptop market have been left with nearly no allocation.

An important aspect of this situation is the negotiation leverage that larger PC vendors have. As they command more volume than smaller companies, Dell, HP, and Apple are willing to sign bigger contracts with CXMT to secure a larger DRAM supply, even at prices higher than historical levels. For CXMT, this is a positive indication that capacity expansion is well-received and a signal to continue building new fabs. DigiTimes also notes that the United States government has not yet made a firm decision on whether to keep CXMT on the barred entity list, so PC OEMs are taking advantage of the opportunity to stockpile any available DRAM. Future policy changes might impact this, but for now, long-term supply agreements are being made to secure any DDR5/LPDDR5X memory possible.

MSI today announced that its Intel 800-series motherboards are now fully optimized for DDR5 memory built on CXMT (ChangXin Memory Technologies) DRAM. Following dedicated BIOS memory tuning, MSI Z890 motherboards deliver stable DDR5-8000+ operation with CXMT-based modules, spanning from flagship overclocking designs all the way to mainstream 4-DIMM boards.

CXMT-based DDR5 modules have rapidly gained popularity thanks to their strong value proposition, but their frequency headroom has historically lagged behind established DRAM vendors, which is a gap defined less by the silicon itself than by how well motherboard firmware understands it. MSI took on exactly that challenge, developing dedicated memory training and timing optimizations for CXMT ICs and validating the results with rigorous stress testing.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD330-4: Standard Package High Bandwidth Memory (SPHBM4). SPHBM4 uses the same DRAM dies as HBM4, commonly used in artificial intelligence accelerators, with a new interface base die that enables mounting on standard organic substrates rather than silicon substrates. JESD330-4 is available for download from the JEDEC website.

JESD330-4 SPHBM is architected to operate at the same aggregate data throughput as HBM4 using fewer pins by operating at a higher frequency. Where the HBM4 interface has 2048 data signals, when published, SPHBM4 will define 512 data signals with 4:1 serialization to achieve the same bandwidth. This change allows the relaxed bump pitch required for connection to organic substrates.

Lexar is preparing new DDR5 memory kits built around CXMT (ChangXin Memory Technologies) chips, and the jump in speed over previous CXMT-based products is notable. Earlier kits using CXMT memory were limited to 6000 MT/s while the new modules push that to 7200 MT/s and 7600 MT/s, both running CL38 timings at 1.4 V. The new kits will launch under the THOR II name in the existing THOR RGB DDR5 lineup in 32 GB dual-channel configurations using two 16 GB modules. CPU-Z data backing the 7600 MT/s claim has already surfaced, with the faster kit identified by the module name LD5U16G76C38BV.

MSI recently demonstrated CXMT-based DDR5 hitting 8000 MT/s on AMD platforms, which signals that these chips have more overclocking headroom than their mainstream entry-level positioning suggested. However, the new Lexar kits don't seem to quite reach that speed, but 7600 MT/s at CL38 is competitive with what other memory vendors are offering in the same tier. No pricing or release date has been announced yet by Lexar for its upcoming THOR II RGB DDR5 memory kits. Looking back at CXMT, it does seem that the Chinese company has managed to close the gap with Samsung, SK Hynix, and Micron. Moreover, recent reports stated that even Apple is negotiating with the U.S. government to get clearance to use sanctioned CXMT memory chips in its products.

In something of a bizarre twist, the recent reports of a Steam Machine "red line of death" that seemed to indicate a GPU issue were apparently merely a BIOS issue. According to an original post on r/steammachine on Reddit, a user who goes by u/me_hill suffered what appeared to be a GPU failure on their Valve Steam Machine as little as 20 minutes after setting it up. However, after contacting Steam Support and working through some troubleshooting steps provided by commenters on the Reddit thread, the original poster updated the thread explaining that they "left [the Steam Machine] unplugged overnight and plugged it back in today to try some of the BIOS stuff that other people suggested... and it booted up immediately without issue."

A comment by u/SteamHWFeedback, an official Valve support account on Reddit, explained, in response to another user with the same issue, that the curious behavior reported in both cases was indicative of a BIOS or memory training issue, and that unplugging and power cycling the Steam Machine, then plugging it back in and performing a BIOS reset should be enough to trigger memory training on the next power cycle. Many redditors are urging the user to contact Valve about the issue anyway, since it occurred at random, but as the Valve representative indicated, it seems as though the Steam Machine rebooted in the middle of an incomplete BIOS update.

Micron has broken ground on a ¥1.5 trillion ($9.3 billion) factory expansion in Hiroshima Prefecture, Japan, with equipment installation scheduled for the second half of 2028 confirming the previous reports of a new HBM plant in Japan. The Japanese government is contributing up to ¥500 billion ($3 billion), bringing its total support for Micron to around ¥775 billion ($4.7 billion) to date. For the moment, Micron remains the only overseas DRAM manufacturer left on Japanese soil making it a point of strategic importance for Tokyo. The Hiroshima facility has a history with Micron. This is where the company produced its very first HBM wafer, while the site was acquired when it bought the bankrupt Japanese DRAM maker Elpida Memory back in 2013. The fab expansion will focus on advanced memory including HBM with around 80% of the required materials already sourced locally in Japan. The company is also building two leading-edge fabs in Boise, US, and broke ground earlier this year on a $100 billion production site near Syracuse, New York.

Separately, Micron and Ford announced today a long-term supply agreement covering memory and storage solutions for Ford's next-generation vehicle production. Micron is expanding automotive memory output and pointing to its Manassas, Virginia fab as part of the localized supply chain backing the deal.

Sandisk Corporation (Nasdaq: SNDK) today announced it is sampling its BiCS10 1 Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve industry-leading 1 Tb TLC memory density greater than 29 Gb/mm², improving bit density by 59 percent while delivering up to 4.8 Gb/s interface speed, a 33 percent improvement compared with 8th generation 3D flash memory currently in mass production.

Built on Sandisk's proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10 percent for input and 34 percent for output compared to the previous BiCS8 generation.

Kioxia Corporation, a world leader in memory solutions, today announced that it has commenced sample shipments of 1 Tb (terabit) Triple-Level-Cell (TLC) memory devices utilizing its 10th-generation BiCS FLASH 3D flash memory technology. These will be primarily integrated into the company's enterprise and data center SSDs, strengthening Kioxia's lineup to meet the growing demand for AI storage, which requires higher performance, higher capacity, and lower power consumption. These new products will be manufactured using state-of-the-art equipment at Kioxia's Kitakami Plant Fab2 facility in Iwate Prefecture, Japan.

By leveraging innovative CMOS directly Bonded to Array (CBA) technology and On-Pitch Select Gate Drain (OPS) technology, both adopted since the 8th-generation BiCS FLASH, the 10th-generation technology achieves a NAND interface speed of 4.8 Gb/s, a 33% improvement over the 8th generation. Bit density has increased by 59% by stacking 332 layers and improving lateral density. Additionally, write and read power efficiencies have improved by 18% and 30% respectively, helping to reduce power consumption in data centers and enterprise infrastructure.

Shortly after Valve launched the long-awaited Steam Machine, reviews were quick to point out its middling performance and high price, with the gaming console scoring in between the AMD Radeon RX 6600 and 7600 in gaming tests. As it turns out, one of the compromises Valve made in order to launch the Steam Machine at a slightly lower price was to use single-channel DDR5 and not dual-channel DDR5. Curiously, even though you might expect the Steam Machine to suffer from a GPU bottleneck, given the GPU specs and limited VRAM, recent tests by Gamers Nexus on YouTube show that the mini PC is capable of up to 19.4% more performance in CPU-intensive workloads.

The YouTube channel's testing team put the Steam Machine through a battery of CPU and GPU tests, and, as expected, the biggest differences showed up in CPU-intensive workloads, with GPU tests demonstrating a peak performance difference of 8.7% in Baldur's Gate 3 at 1080p in Ultra settings. That's not to say there weren't improvements to gaming workloads. Especially when targeting high frame rates in games, as would be the case with e-sports games, for instance, differences of up to 15% could be observed. These substantial differences were observed by Gamers Nexus when testing Baldur's Gate 3 at 1080p and low settings, where a 15.3% performance improvement was exhibited, while Outer Worlds 2 at 1080p and low settings also showed a 14.7% performance improvement going from single-channel to dual-channel SODIMMs. The other major outlier was Resident Evil 4 at 1080p and "prioritize performance" mode, which showed a 10% improvement in frame rate.

AMD today announced the AMD Versal Premium Gen 2 Memory on Package (MoP) adaptive system-on-chips (SoCs). The MoP architecture integrates up to 32 GB of LPDDR5X into a single package, delivering up to 288 GB/s of bandwidth in up to 60% less board area, letting engineers build high-bandwidth systems without the risk and time of board-level memory design. As physical AI, networking, and aerospace and defense workloads push more data through ever-tighter space and power budgets, MoP targets the designs that need it most: test and measurement, professional video editing, and VPX systems for secure communications and defense acceleration.

"For years, system architects had to choose between the memory bandwidth they wanted and the space, power and longevity their programs could actually live with. Memory on Package removes that tradeoff. Our customers can design for the system they want to build, not the one their memory constraints allow, and bring it to market faster."—Sumit Shah, head of product management and marketing, Adaptive and Embedded Computing Group, AMD

Apple has reportedly been negotiating with the U.S. government to get clearance to use sanctioned Chinese memory maker CXMT in its products. According to a report from the Financial Times, Apple is in talks with the U.S. government to clear the previously blacklisted Chinese entity. The U.S. government had earlier placed Chinese memory maker CXMT on a sanctions list, preventing American companies from purchasing products like the now highly sought-after DRAM. This has created a challenging situation given the severe supply shortage the entire industry is facing. Since the big three—Samsung, SK hynix, and Micron—are ramping up capacity at an insufficient rate, sourcing DRAM from another supplier would help ease the pressure on electronics makers by providing better pricing, more supply, and facilitating product shipments.

CXMT is capable of manufacturing the latest DDR5 and its low-power sibling LPDDR5X memory. Late last year, the company showcased DDR5-8000 and LPDDR5X-10667 DRAM modules that are in mass production. These memory modules are available in 12 Gb and 16 Gb LPDDR5X capacities, while DDR5 scales to 16 Gb and 24 Gb module formats. However, a significant problem remains. Even if Apple gets clearance from the U.S. government to use CXMT memory, the company likely can't satisfy domestic demand first before shipping the quantity that Apple would require. Some estimates suggest CXMT could reach over $50 billion in revenue by 2026, according to SemiAnalysis, indicating that domestic demand is so strong that CXMT is rapidly selling out wafers.

A very grim picture is being painted over the consumer PC space as Lenovo is now claiming that memory price increases will become the new norm. According to the latest report from Wall Street News China, Lenovo stated at ISC 2026 that the upward trajectory for memory prices has just begun, meaning that these increases will become a standard expectation. This is disappointing news for the majority of PC enthusiasts who were hoping for stabilization in DRAM and NAND Flash pricing, as these increases are pushing the cost of consumer electronics beyond previous levels of affordability.

Lenovo, one of the largest PC OEMs, frequently conducts channel checks with its DRAM and NAND Flash suppliers. The company is adept at projecting demand, allowing it to understand where the demand and supply ratio is heading. According to the company's analysis, even though Samsung, SK hynix, and Micron are accelerating the construction of new semiconductor fabs to expand capacity, this is simply not enough to meet demand. It is unclear whether this means that the new capacity coming online is insufficient or if the current capacity projections are inadequate. Either way, Lenovo projects that shortages of DRAM and NAND Flash will last longer than originally anticipated.

Gamers building DDR4 systems have long-faced a compromise: either more capacity or more character. Goodram RIVAL DDR4 RADIANT changes that equation by offering larger memory capacities and two heatsink color variants that allow users to match the modules to a carefully designed PC build. The new modules operate at 3200 MHz and are available in capacities ranging from 4 GB to 32 GB per module, while dual-channel configurations reach up to 64 GB. The heatsinks come in two versions: Red and Green—both built on black PCBs.

DDR4 Still Has an Active User Base
"DDR4 remains an important standard for a large group of gamers. Goodram RIVAL DDR4 RADIANT addresses the needs of users who want more memory capacity, smoother multitasking, and modules that visually match their PC configuration," says Monika Wilk, Vice President of Wilk Elektronik SA, manufacturer of the Goodram brand.

Yesterday, Qualcomm announced its High Bandwidth Compute (HBC) product, a memory-compute solution hybrid designed to replace traditional High Bandwidth Memory (HBM) and offer greater performance, efficiency, and throughput. HBC utilizes LPDDR memory, stacking them across multiple layers in a 3D vertical space and interconnecting them with through-silicon vias (TSVs). This approach provides better energy efficiency than traditional HBM, which stacks regular DDR in vertical layers, as the low-power DDR (LPDDR) chips consume less power while delivering similar bandwidth and capacity. Qualcomm has successfully stacked multiple LPDDR layers on top of each other, with the base of the HBC being a compute die that performs near-memory computation and offloads some processing from the main processor.

This technique is similar to what HBM4 memory currently does, with the base die being a logic die to better integrate compute solutions underneath for packet tracing and data preparation for entering and exiting HBM. However, Qualcomm aims to achieve higher efficiency and more optimized data movement, with a 6x increase in bandwidth per watt compared to the current HBM specification, likely HBM4. HBC Gen 1 achieved 133 TB/s of bandwidth on the AI250 accelerator card, a 18x increase over the LPDDR5X currently used in the AI200 card from Qualcomm. The company also claims there is a viable roadmap for using HBC across many Qualcomm AI accelerators, with HBC Gen 1 shipping with the AI250 AI accelerator in mid-2027. The next-generation HBC Gen 2 is expected to yield further significant gains in bandwidth.

Global leader in storage and embedded solutions, Transcend Information, Inc. (Transcend), today announced its new generation of industrial SSD and memory card solutions powered by advanced 218-layer 3D NAND flash technology. Featuring optimized architecture and increased storage density, the new product lineup unlocks the full potential of next-generation flash memory performance to address the growing demands of AIoT edge computing and smart manufacturing. Designed for data-intensive environments, these solutions empower a wide range of applications across industrial automation, data centers, and intelligent surveillance systems.

High-Performance SSDs for AI and Data-Intensive Workloads
Transcend's latest family of 218-layer SSDs is engineered to meet the stringent requirements of AI-driven applications. Leading the lineup is the flagship MTE740A, featuring a high-speed PCIe Gen 5 x4 interface and NVMe 2.0 compliance. Delivering sequential read speeds of up to 14,000 MB/s and random read performance of up to 2.1 million IOPS, the MTE740A enables rapid processing of massive AI datasets and real-time analytics. To address a broad range of embedded computing needs, Transcend also introduces the MTE770A PCIe Gen 4 x4 M.2 2280 SSD, the compact MTE490A PCIe Gen 4 x4 M.2 2242 SSD for space-constrained embedded systems, and the SATA III-based 2.5-inch SSD490K.

Samsung Electronics, the world leader in advanced memory technology today announced that, for the first time in the industry, it has developed the industry's fastest Universal Flash Storage (UFS) 5.0 solution, which will help enable seamless and highly efficient AI services on future mobile devices.

The milestone sets a new benchmark for the next-generation mobile memory market as the enhanced performance is expected to allow mobile device users with significantly reduced latency and faster response times when running large language models (LLMs) in on-device AI environments.

Micron Technology, Inc. (Nasdaq: MU) today announced a strategic agreement with Anthropic that spans memory and storage AI architecture design, supply and demand, enterprise adoption of Claude across Micron and a strategic investment in Anthropic's Series H funding round. The agreement directly links the demands of frontier AI models to how infrastructure is designed, supplied, and deployed at scale.

"The AI revolution has permanently elevated the role of memory and storage solutions from the data center to the edge," said Sumit Sadana, executive vice president and chief business officer, Micron. "Micron's strategic collaboration with Anthropic brings together the industry-leading capabilities of both companies to innovate and scale next-generation AI infrastructure."

Chinese companies like Gloway and KingBank, which provide DDR5 memory kits for consumer platforms, have started integrating domestically produced CXMT DDR5 memory into their RAM kits, effectively ending their reliance on DRAM from Micron, SK hynix, and Samsung after years of external dependence. It has been reported that Gloway and KingBank have begun incorporating CXMT's 24 Gb DDR5 modules, which are being shipped as part of 48 GB RAM kits. With 3 GB per module, this results in eight modules per DDR5 DIMM for a total of 24 GB of capacity. In the regular dual DIMM configuration, Gloway and KingBank are offering consumers 48 GB of capacity.

Gloway has prepared the Longwuyi Yi Special Edition kit, which operates at 6,000 MT/s with latencies of CL36-38-38-80. This kit runs at a voltage of 1.2 V and is specialized for AMD CPUs. Reportedly, it features custom heat spreaders to maintain cooling and control heat dissipation, with 5 W/mK thermal pads included. Meanwhile, KingBank DIMMs use 2 mm heat spreaders and have a custom thermal interface material applied over the PMIC, along with dual-side RGB LED lighting that can be controlled via software.

According to an investigation by Ars Technica, AMD has quietly removed a memory encryption feature from its consumer-focused Ryzen processors after years of inclusion. This feature, known as Transparent Secure Memory Encryption (TSME), is used to encrypt a system's memory content and prevent possible physical exploits that unencrypted memory data could be vulnerable to. Reportedly, AMD introduced TSME about a decade ago and began shipping it across all of its processors, including regular Ryzen, professional Ryzen Pro, Threadripper, and EPYC solutions. However, a random test on a Ryzen 7 9700X CPU, which uses "Zen 5" IP, has highlighted the absence of TSME support in consumer chips. In various exchanges between AMD engineers and some security professionals, the investigation led to a single response from AMD stating that "TSME is a security feature only applied to PRO CPUs as part of AMD PRO Technologies."

AMD has reportedly removed the feature quietly without prior notice. Discovering that the feature is missing is incredibly difficult on Windows-based machines, but still possible on Linux-based OS installations. Under a Linux-based OS, checking for firmware security revealed a missing encrypted RAM flag, despite TSME being enabled in the BIOS previously. It turns out that starting with the AGESA 1.2.7.0 build and in future AGESA versions, AMD has systematically removed the feature from its consumer Ryzen processors. After further investigation and inquiries to AMD, there is no information on whether the AGESA firmware is disabling this feature or if newer CPUs will ship with TSME disabled at the silicon level. All we know so far is that the feature is no longer present after years of being included on the consumer side.

Goodram expands its portfolio with a new gaming brand - Goodram RIVAL. Its first product is the Goodram RIVAL DDR5 SODIMM series: memory modules designed for gaming laptops and compact mobile workstations built to perform without hardware limitations.

The RIVAL brand was created for gamers, PC enthusiasts, and users who expect stability, speed, and predictable performance under load. DDR5 SODIMM is its mobile-focused lineup - an upgrade for users who want to get more from their laptop without replacing the entire platform.