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Samsung Starts Mass Production of PM9E1, Industry's Most Powerful PC SSD for AI

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass-producing PM9E1, a PCIe 5.0 SSD with the industry's highest performance and largest capacity. Built on its in-house 5-nanometer (nm)-based controller and eighth-generation V-NAND (V8) technology, the PM9E1 will provide powerful performance and enhanced power efficiency, making it an optimal solution for on-device AI PCs. Key attributes in SSDs, including performance, storage capacity, power efficiency and security, have all been improved compared to its predecessor (PM9A1a).

"Our PM9E1 integrated with a 5 nm controller delivers industry-leading power efficiency and utmost performance validated by our key partners," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "In the rapidly growing on-device AI era, Samsung's PM9E1 will offer a robust foundation for global customers to effectively plan their AI portfolios."

Canon Delivers FPA -1200NZ2C Nanoimprint Lithography System for Semiconductor Manufacturing to the Texas Institute for Electronics

Canon Inc. announced today that it will ship its most advanced lithography platform, the FPA-1200NZ2C nanoimprint lithography (NIL) system for semiconductor manufacturing, to the Texas Institute for Electronics (TIE), a Texas-based semiconductor consortium. Canon became the first in the world to commercialize a semiconductor manufacturing system that uses NIL technology, which forms circuit patterns in a different method from conventional projection exposure technology, when it released the FPA-1200NZ2C on October 13, 2023.

In contrast to conventional photolithography equipment, which transfers a circuit pattern by projecting it onto the resist coated wafer, the new product does it by pressing a mask imprinted with the circuit pattern into the resist on the wafer like a stamp. Because its circuit pattern transfer process does not go through an optical mechanism, fine circuit patterns on the mask can be faithfully reproduced on the wafer. With reduced power consumption and cost, the new system enables patterning with a minimum linewidth of 14 nm, equivalent to the 5 nm node that is required to produce most advanced logic semiconductors currently available.

Huawei Starts Shipping "Ascend 910C" AI Accelerator Samples to Large NVIDIA Customers

Huawei has reportedly started shipping its Ascend 910C accelerator—the company's domestic alternative to NVIDIA's H100 accelerator for AI training and inference. As the report from China South Morning Post notes, Huawei is shipping samples of its accelerator to large NVIDIA customers. This includes companies like Alibaba, Baidu, and Tencent, which have ordered massive amounts of NVIDIA accelerators. However, Huawei is on track to deliver 70,000 chips, potentially worth $2 billion. With NVIDIA working on a B20 accelerator SKU that complies with US government export regulations, the Huawei Ascend 910C accelerator could potentially outperform NVIDIA's B20 processor, per some analyst expectations.

If the Ascend 910C receives positive results from Chinese tech giants, it could be the start of Huawei's expansion into data center accelerators, once hindered by the company's ability to manufacture advanced chips. Now, with foundries like SMIC printing 7 nm designs and possibly 5 nm coming soon, Huawei will leverage this technology to satisfy the domestic demand for more AI processing power. Competing on a global scale, though, remains a challenge. Companies like NVIDIA, AMD, and Intel have access to advanced nodes, which gives their AI accelerators more efficiency and performance.

Samsung Starts Mass Production of PCle 5.0 PM9E1 SSD

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced it has begun mass producing PM9E1, a PCle 5.0 SSD with the industry's highest performance and largest capacity. Built on its in-house 5-nanometer (nm)-based controller and eighth-generation V-NAND (V8) technology, the PM9E1 will provide powerful performance and enhanced power efficiency, making it an optimal solution for on-device AI PCs. Key attributes in SSDs, including performance, storage capacity, power efficiency and security, have all been improved compared to its predecessor (PM9A1a).

"Our PM9E1 integrated with a 5 nm controller delivers industry-leading power efficiency and utmost performance validated by our key partners," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "In the rapidly growing on-device AI era, Samsung's PM9E1 will offer a robust foundation for global customers to effectively plan their AI portfolios."

Microsoft Unveils New Details on Maia 100, Its First Custom AI Chip

Microsoft provided a detailed view of Maia 100 at Hot Chips 2024, their initial specialized AI chip. This new system is designed to work seamlessly from start to finish, with the goal of improving performance and reducing expenses. It includes specially made server boards, unique racks, and a software system focused on increasing the effectiveness and strength of sophisticated AI services, such as Azure OpenAI. Microsoft introduced Maia at Ignite 2023, sharing that they had created their own AI accelerator chip. More information was provided earlier this year at the Build developer event. The Maia 100 is one of the biggest processors made using TSMC's 5 nm technology, designed for handling extensive AI tasks on Azure platform.

Maia 100 SoC architecture features:
  • A high-speed tensor unit (16xRx16) offers rapid processing for training and inferencing while supporting a wide range of data types, including low precision data types such as the MX data format, first introduced by Microsoft through the MX Consortium in 2023.
  • The vector processor is a loosely coupled superscalar engine built with custom instruction set architecture (ISA) to support a wide range of data types, including FP32 and BF16.
  • A Direct Memory Access (DMA) engine supports different tensor sharding schemes.
  • Hardware semaphores enable asynchronous programming on the Maia system.

Imec Demonstrates Logic and DRAM Structures Using High NA EUV Lithography

Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents patterned structures obtained after exposure with the 0.55NA EUV scanner in the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands. Random logic structures down to 9,5 nm (19 nm pitch), random vias with 30 nm center-to-center distance, 2D features at 22 nm pitch, and a DRAM specific lay out at P32nm were printed after single exposure, using materials and baseline processes that were optimized for High NA EUV by imec and its partners in the framework of imec's Advanced Patterning Program. With these results, imec confirms the readiness of the ecosystem to enable single exposure high-resolution High NA EUV Lithography.

Following the recent opening of the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands, customers now have access to the (TWINSCAN EXE:5000) High NA EUV scanner to develop private High NA EUV use cases leveraging the customer's own design rules and lay outs.

Ampere Announces 512-Core AmpereOne Aurora CPU for AI Computing

Ampere has announced a significant update to its product roadmap, highlighting the upcoming 512-core AmpereOne Aurora processor. This new chip is specifically designed to address the growing demands of cloud-native AI computing.

The newly announced AmpereOne Aurora 512 cores processor integrates AI acceleration and on-chip High Bandwidth Memory (HBM), promising three times the performance per rack compared to current AmpereOne processors. Aurora is designed to handle both AI training and inference workloads, indicating Ampere's commitment to becoming a major player in the AI computing space.

Qualitas Semiconductor Develops First In-House PCIe 6.0 PHY IP

Qualitas Semiconductor Co., Ltd. has developed a new PCIe 6.0 PHY IP, marking a significant advance in computer interconnect technology. This new product, created using advanced 5 nm process technology is designed to meet the high-speed data transfer needs of the AI era. The Qualitas' PCIe PHY IP using 5 nm FinFet CMOS technology consists of hardmacro PMA and PCS compliant to PCIe Base 6.0 specification.

The PCIe 6.0 PHY IP can achieve transmission speeds up to 64GT/s per lane. When using all 16 lanes, it can transfer data at rates up to 256 GB/s. These speeds make it well-suited for data centers and self-driving car technologies, where rapid data processing is essential. Qualitas achieved this performance by implementing 100G PAM4 signaling technology. Highlighting the importance of the new IP, Qualitas CEO Dr. Duho Kim signaled the company's intent to continue pushing boundaries in semiconductor technology.

AMD Granite Ridge and Strix Point Zen 5 Die-sizes and Transistor Counts Confirmed

AMD is about give the new "Zen 5" microarchitecture a near-simultaneous launch across both its client segments—desktop and mobile. The desktop front is held by the Ryzen 9000 "Granite Ridge" Socket AM5 processors; while Ryzen AI 300 "Strix Point" powers the company's crucial effort to capture Microsoft Copilot+ AI PC market share. We recently did a technical deep-dive on the two. HardwareLuxx.de scored two important bits of specs for both processors in its Q&A interaction with AMD—die sizes and transistor counts.

To begin with, "Strix Point" is a monolithic silicon, which is confirmed to be built on the TSMC N4P foundry node (4 nm). This is a slight upgrade over the N4 node that the company built its previous generation "Phoenix" and "Hawk Point" processors on. The "Strix Point" silicon measures 232.5 mm² in area, which is significantly larger than the 178 mm² of "Hawk Point" and "Phoenix." The added die area comes from there being 12 CPU cores instead of 8, and 16 iGPU compute units instead of 12; and a larger NPU. There are many other factors, such as the larger 24 MB CPU L3 cache; and the sizes of the "Zen 5" and "Zen 5c" cores themselves.

TSMC to Raise Wafer Prices by 10% in 2025, Customers Seemingly Agree

Taiwanese semiconductor giant TSMC is reportedly planning to increase its wafer prices by up to 10% in 2025, according to a Morgan Stanley note cited by investor Eric Jhonsa. The move comes as demand for cutting-edge processors in smartphones, PCs, AI accelerators, and HPC continues to surge. Industry insiders reveal that TSMC's state-of-the-art 4 nm and 5 nm nodes, used for AI and HPC customers such as AMD, NVIDIA, and Intel, could see up to 10% price hikes. This increase would push the cost of 4 nm-class wafers from $18,000 to approximately $20,000, representing a significant 25% rise since early 2021 for some clients and an 11% rise from the last price hike. Talks about price hikes with major smartphone manufacturers like Apple have proven challenging, but there are indications that modest price increases are being accepted across the industry. Morgan Stanley analysts project a 4% average selling price increase for 3 nm wafers in 2025, which are currently priced at $20,000 or more per wafer.

Mature nodes like 16 nm are unlikely to see price increases due to sufficient capacity. However, TSMC is signaling potential shortages in leading-edge capacity to encourage customers to secure their allocations. Adding to the industry's challenges, advanced chip-on-wafer-on-substrate (CoWoS) packaging prices are expected to rise by 20% over the next two years, following previous increases in 2022 and 2023. TSMC aims to boost its gross margin to 53-54% by 2025, anticipating that customers will absorb these additional costs. The impact of these price hikes on end-user products remains uncertain. Competing foundries like Intel and Samsung may seize this opportunity to offer more competitive pricing, potentially prompting some chip designers to consider alternative manufacturing options. Additionally, TSMC's customers could reportedly be unable to secure their capacity allocation without "appreciating TSMC's value."

ByteDance and Broadcom to Collaborate on Advanced AI Chip

ByteDance, TikTok's parent company, is reportedly working with American chip designer Broadcom to develop a cutting-edge AI processor. This collaboration could secure a stable supply of high-performance chips for ByteDance, according to Reuters. Sources claim the joint project involves a 5 nm Application-Specific Integrated Circuit (ASIC), designed to comply with U.S. export regulations. TSMC is slated to manufacture the chip, though production is not expected to begin this year.

This partnership marks a significant development in U.S.-China tech relations, as no public announcements of such collaborations on advanced chips have been made since Washington implemented stricter export controls in 2022. For ByteDance, this move could reduce procurement costs and ensure a steady chip supply, crucial for powering its array of popular apps, including TikTok and the ChatGPT-like AI chatbot "Doubao." The company has already invested heavily in AI chips, reportedly spending $2 billion on NVIDIA processors in 2023.

GIGABYTE Intros GeForce RTX 4070 Ti SUPER MAX with Repositioned 12VHPWR Connector

GIGABYTE introduced the GeForce RTX 4070 Ti SUPER WindForce MAX graphics card. It is characterized by an oversized air cooling solution that gives it some large dimensions of 33.1 cm length, 5.55 cm thickness (3 slots), but more importantly, a height of 13.6 cm, which could pose a challenge for those with mid-tower cases, given the tight cable bending restrictions of the 12VHPWR connector. GIGABYTE found a novel solution to this problem. The power connector is located pointing toward the tail end of the card, where the PCB terminates. The PCB is only two-thirds the length of the card, and so the power cable can be routed in without any bends.

The WindForce cooling solution features a trio of 100 mm fans that ventilate a large aluminium fin-stack heatsink with nine copper heatpipes, and a direct-touch base. GIGABYTE has given the card a factory overclock of 2655 MHz GPU clocks, compared to 2610 MHz reference, while leaving the memory untouched at 21 Gbps. The card offers dual-BIOS, with the default BIOS enabling these clock speeds, and the Silent BIOS lowering them to reference speeds, while quietening the cooler. Based on the 5 nm AD103 silicon, the RTX 4070 Ti SUPER is endowed with 8,448 CUDA cores, 66 RT cores, 264 Tensor cores, 96 ROPs, and 264 TMUs. The GPU gets 16 GB of 21 Gbps GDDR6X memory across a 256-bit wide memory interface. The company didn't reveal pricing.

Marvell Expands Connectivity Portfolio With New PCIe Gen 6 Retimer Product Line

Marvell Technology, a leader in data infrastructure semiconductor solutions, today expanded its connectivity portfolio with the launch of the new Alaska P PCIe retimer product line built to scale data center compute fabrics inside accelerated servers, general-purpose servers, CXL systems and disaggregated infrastructure. The first two products, 8- and 16-lane PCIe Gen 6 retimers, connect AI accelerators, GPUs, CPUs and other components inside server systems.

Artificial intelligence (AI) and machine learning (ML) applications are driving data flows and connections inside server systems at significantly higher bandwidth, necessitating PCIe retimers to meet the required connection distances at faster speeds. PCIe is the industry standard for inside-server-system connections between AI accelerators, GPUs, CPUs and other server components. AI models are doubling their computation requirements every six months1 and are now the primary driver of the PCIe roadmap, with PCIe Gen 6 becoming a requirement.

AMD Introduces EPYC 4004 Series Socket AM5 Server Processors for SMB and Dedicated Webhosting Markets

AMD today introduced the EPYC 4004 line of server processors in the Socket AM5 package. These chips come with up to 16 "Zen 4" CPU cores, a 2-channel DDR5 memory interface, and a 28-lane PCIe Gen 5 I/O, and are meant to power small-business servers, as well as cater to the dedicated web-server hosting business that generally attracts client-segment processors. This is the exact segment of market that Intel addresses with its Xeon E-2400 series processors in the LGA1700 package. The EPYC 4004 series offers a superior support and warranty regime compared to client-segment processors, besides ECC memory support, and AMD Secure Processor, and all of the security features you get with Ryzen PRO 7000 series processors for commercial desktops.

AMD's offer over the Xeon E-2400 series is its CPU core count of up to 16, which lets you fully utilize the 16-core limit of the Windows 2022 Server base license. The EPYC 4004 series is functionally the same processor as the Ryzen 7000 "Raphael" except for its ECC memory support. This chip features up to two 5 nm "Zen 4" CCDs with up to 8 cores, each; and an I/O die that puts out two DDR5 memory channels, and 28 PCIe Gen 5 lanes. Besides today's processor launch, several server motherboard vendors are announcing Socket AM5 server boards that are rackmount-friendly, and with server-relevant features.

TSMC Unveils Next-Generation HBM4 Base Dies, Built on 12 nm and 5 nm Nodes

During the European Technology Symposium 2024, TSMC has announced its readiness to manufacture next-generation HBM4 base dies using both 12 nm and 5 nm nodes. This significant development is expected to substantially improve the performance, power consumption, and logic density of HBM4 memory, catering to the demands of high-performance computing (HPC) and artificial intelligence (AI) applications. The shift from a traditional 1024-bit interface to an ultra-wide 2048-bit interface is a key aspect of the new HBM4 standard. This change will enable the integration of more logic and higher performance while reducing power consumption. TSMC's N12FFC+ and N5 processes will be used to produce these base dies, with the N12FFC+ process offering a cost-effective solution for achieving HBM4 performance and the N5 process providing even more logic and lower power consumption at HBM4 speeds.

The company is collaborating with major HBM memory partners, including Micron, Samsung, and SK Hynix, to integrate advanced nodes for HBM4 full-stack integration. TSMC's base die, fabricated using the N12FFC+ process, will be used to install HBM4 memory stacks on a silicon interposer alongside system-on-chips (SoCs). This setup will enable the creation of 12-Hi (48 GB) and 16-Hi (64 GB) stacks with per-stack bandwidth exceeding 2 TB/s. TSMC's collaboration with EDA partners like Cadence, Synopsys, and Ansys ensures the integrity of HBM4 channel signals, thermal accuracy, and electromagnetic interference (EMI) in the new HBM4 base dies. TSMC is also optimizing CoWoS-L and CoWoS-R for HBM4 integration, meaning that massive high-performance chips are already utilizing this technology and getting ready for volume manufacturing.

AMD RDNA 5 a "Clean Sheet" Graphics Architecture, RDNA 4 Merely Corrects a Bug Over RDNA 3

AMD's future RDNA 5 graphics architecture will bear a "clean sheet" design, and may probably not even have the RDNA branding, says WJM47196, a source of AMD leaks on ChipHell. Two generations ahead of the current RDNA 3 architecture powering the Radeon RX 7000 series discrete GPUs, RDNA 5 could see AMD reimagine the GPU and its key components, much in the same way RDNA did over the former "Vega" architecture, bringing in a significant performance/watt jump, which AMD could build upon with its successful RDNA 2 powered Radeon RX 6000 series.

Performance per Watt is the biggest metric on which a generation of GPUs can be assessed, and analysts believe that RDNA 3 missed the mark with generational gains in performance/watt despite the switch to the advanced 5 nm EUV process from the 7 nm DUV. AMD's decision to disaggregate the GPU, with some of its components being built on the older 6 nm node may have also impacted the performance/watt curve. The leaker also makes a sensational claim that "Navi 31" was originally supposed to feature 192 MB of Infinity Cache, which would have meant 32 MB segments of it per memory cache die (MCD). The company instead went with 16 MB per MCD, or just 96 MB per GPU, which only get reduced as AMD segmented the RX 7900 XT and RX 7900 GRE by disabling one or two MCDs.

Samsung Electronics Announces First Quarter 2024 Results

Samsung Electronics today reported financial results for the first quarter ended March 31, 2024. The Company posted KRW 71.92 trillion in consolidated revenue on the back of strong sales of flagship Galaxy S24 smartphones and higher prices for memory semiconductors. Operating profit increased to KRW 6.61 trillion as the Memory Business returned to profit by addressing demand for high value-added products. The Mobile eXperience (MX) Business posted higher earnings and the Visual Display and Digital Appliances businesses also recorded increased profitability.

The weakness of the Korean won against major currencies resulted in a positive impact on company-wide operating profit of about KRW 0.3 trillion compared to the previous quarter. The Company's total capital expenditures in the first quarter stood at KRW 11.3 trillion, including KRW 9.7 trillion for the Device Solutions (DS) Division and KRW 1.1 trillion on Samsung Display Corporation (SDC). Spending on memory was focused on facilities and packaging technologies to address demand for High Bandwidth Memory (HBM), DDR5 and other advanced products, while foundry investments were concentrated on establishing infrastructure to meet medium- to long-term demand. Display investments were mainly made in IT OLED products and flexible display technologies.

Meta Announces New MTIA AI Accelerator with Improved Performance to Ease NVIDIA's Grip

Meta has announced the next generation of its Meta Training and Inference Accelerator (MTIA) chip, which is designed to train and infer AI models at scale. The newest MTIA chip is a second-generation design of Meta's custom silicon for AI, and it is being built on TSMC's 5 nm technology. Running at the frequency of 1.35 GHz, the new chip is getting a boost to 90 Watts of TDP per package compared to just 25 Watts for the first-generation design. Basic Linear Algebra Subprograms (BLAS) processing is where the chip shines, and it includes matrix multiplication and vector/SIMD processing. At GEMM matrix processing, each chip can process 708 TeraFLOPS at INT8 (presumably meant FP8 in the spec) with sparsity, 354 TeraFLOPS without, 354 TeraFLOPS at FP16/BF16 with sparsity, and 177 TeraFLOPS without.

Classical vector and processing is a bit slower at 11.06 TeraFLOPS at INT8 (FP8), 5.53 TeraFLOPS at FP16/BF16, and 2.76 TFLOPS single-precision FP32. The MTIA chip is specifically designed to run AI training and inference on Meta's PyTorch AI framework, with an open-source Triton backend that produces compiler code for optimal performance. Meta uses this for all its Llama models, and with Llama3 just around the corner, it could be trained on these chips. To package it into a system, Meta puts two of these chips onto a board and pairs them with 128 GB of LPDDR5 memory. The board is connected via PCIe Gen 5 to a system where 12 boards are stacked densely. This process is repeated six times in a single rack for 72 boards and 144 chips in a single rack for a total of 101.95 PetaFLOPS, assuming linear scaling at INT8 (FP8) precision. Of course, linear scaling is not quite possible in scale-out systems, which could bring it down to under 100 PetaFLOPS per rack.
Below, you can see images of the chip floorplan, specifications compared to the prior version, as well as the system.

Intel Launches Gaudi 3 AI Accelerator: 70% Faster Training, 50% Faster Inference Compared to NVIDIA H100, Promises Better Efficiency Too

During the Vision 2024 event, Intel announced its latest Gaudi 3 AI accelerator, promising significant improvements over its predecessor. Intel claims the Gaudi 3 offers up to 70% improvement in training performance, 50% better inference, and 40% better efficiency than Nvidia's H100 processors. The new AI accelerator is presented as a PCIe Gen 5 dual-slot add-in card with a 600 W TDP or an OAM module with 900 W. The PCIe card has the same peak 1,835 TeraFLOPS of FP8 performance as the OAM module despite a 300 W lower TDP. The PCIe version works as a group of four per system, while the OAM HL-325L modules can be run in an eight-accelerator configuration per server. This likely will result in a lower sustained performance, given the lower TDP, but it confirms that the same silicon is used, just finetuned with a lower frequency. Built on TSMC's N5 5 nm node, the AI accelerator features 64 Tensor Cores, delivering double the FP8 and quadruple FP16 performance over the previous generation Gaudi 2.

The Gaudi 3 AI chip comes with 128 GB of HBM2E with 3.7 TB/s of bandwidth and 24 200 Gbps Ethernet NICs, with dual 400 Gbps NICs used for scale-out. All of that is laid out on 10 tiles that make up the Gaudi 3 accelerator, which you can see pictured below. There is 96 MB of SRAM split between two compute tiles, which acts as a low-level cache that bridges data communication between Tensor Cores and HBM memory. Intel also announced support for the new performance-boosting standardized MXFP4 data format and is developing an AI NIC ASIC for Ultra Ethernet Consortium-compliant networking. The Gaudi 3 supports clusters of up to 8192 cards, coming from 1024 nodes comprised of systems with eight accelerators. It is on track for volume production in Q3, offering a cost-effective alternative to NVIDIA accelerators with the additional promise of a more open ecosystem. More information and a deeper dive can be found in the Gaudi 3 Whitepaper.

US Backs TSMC's $65B Arizona Investment with $11.6B Support Package

According to the latest report from Bloomberg, the US government under Joe Biden's administration has announced plans to provide Taiwan Semiconductor Manufacturing Company (TSMC) with a substantial financial support package worth $11.6 billion. The package is composed of $6.6 billion in grants and up to $5 billion in loans. This represents the most significant financial assistance approved under the CHIPS and Science Act, a key initiative to resurrect the US chip industry. The funding will aid TSMC in establishing three cutting-edge semiconductor production facilities in Arizona, with the company's total investment in the state expected to exceed an impressive $65 billion. TSMC's multi-phase Arizona project will commence with the construction of a fab module near its existing Fab 21 facility. Production using 4 nm and 5 nm process nodes is slated to begin by early 2025. The second phase, scheduled for 2028, will focus on even more advanced 2 nm and 3 nm technologies.

TSMC has kept details about the third facility's production timeline and process node under wraps. The company's massive investment in Arizona is expected to profoundly impact the local economy, creating 6,000 high-tech manufacturing jobs and over 20,000 construction positions. Moreover, $50 million has been earmarked for training local workers, which aligns with President Joe Biden's goal of bolstering domestic manufacturing and technological independence. However, TSMC's Arizona projects have encountered obstacles, including labor disputes and uncertainties regarding government support, resulting in delays for the second facility's production timeline. Additionally, reports suggest that at least one TSMC supplier has abandoned plans to set up operations in Arizona due to workforce-related challenges.

Huawei and SMIC Prepare Quadruple Semiconductor Patterning for 5 nm Production

According to Bloomberg's latest investigation, Huawei and Semiconductor Manufacturing International Corporation (SMIC) have submitted patents on the self-aligned quadruple patterning (SAQP) pattern etching technique to enable SMIC to achieve 5 nm semiconductor production. The two Chinese giants have been working with the Deep Ultra Violet (DUV) machinery to develop a pattern etching technique allowing SMIC to produce a node compliant with the US exporting rules while maintaining the density improvements from the previously announced 7 nm node. In the 7 nm process, SMIC most likely used self-aligned dual patterning (SADP) with DUV tools, but for the increased density of the 5 nm node, a doubling to SAQP is required. In semiconductor manufacturing, lithography tools take multiple turns to etch the design of the silicon wafer.

Especially with smaller nodes getting ever-increasing density requirements, it is becoming challenging to etch sub-10 nm designs using DUV tools. That is where Extreme Ultra Violet (EUV) tools from ASML come into play. With EUV, the wavelengths of the lithography printers are 14 times smaller than DUV, at only 13.5 nm, compared to 193 nm of ArF immersion DUV systems. This means that without EUV, SMIC has to look into alternatives like SAQP to increase the density of its nodes and, as a result, include more complications and possibly lower yields. As an example, Intel tried to use SAQP in its first 10 nm nodes to reduce reliance on EUV, which resulted in a series of delays and complications, eventually pushing Intel into EUV. While Huawei and SMIC may develop a more efficient solution for SAQP, the use of EUV is imminent as the regular DUV can not keep up with the increasing density of semiconductor nodes. Given that ASML can't ship its EUV machinery to China, Huawei is supposedly developing its own EUV machines, but will likely take a few more years to show.

NVIDIA "Blackwell" GeForce RTX to Feature Same 5nm-based TSMC 4N Foundry Node as GB100 AI GPU

Following Monday's blockbuster announcements of the "Blackwell" architecture and NVIDIA's B100, B200, and GB200 AI GPUs, all eyes are now on its client graphics derivatives, or the GeForce RTX GPUs that implement "Blackwell" as a graphics architecture. Leading the effort will be the new GB202 ASIC, a successor to the AD102 powering the current RTX 4090. This will be NVIDIA's biggest GPU with raster graphics and ray tracing capabilities. The GB202 is rumored to be followed by the GB203 in the premium segment, the GB205 a notch lower, and the GB206 further down the stack. Kopite7kimi, a reliable source with NVIDIA leaks, says that the GB202 silicon will be built on the same TSMC 4N foundry node as the GB100.

TSMC 4N is a derivative of the company's mainline N4P node, the "N" in 4N stands for NVIDIA. This is a nodelet that TSMC designed with optimization for NVIDIA SoCs. TSMC still considers the 4N as a derivative of the 5 nm EUV node. There is very little public information on the power- and transistor density improvements of the TSMC 4N over TSMC N5. For reference, the N4P, which TSMC regards as a 5 nm derivative, offers a 6% transistor-density improvement, and a 22% power efficiency improvement. In related news, Kopite7kimi says that with "Blackwell," NVIDIA is focusing on enlarging the L1 caches of the streaming multiprocessors (SM), which suggests a design focus on increasing the performance at an SM-level.

SMIC Prepares for 3 nm Node Development, Requires Chinese Government Subsidies

SMIC, China's largest semiconductor manufacturer, is reportedly assembling a dedicated team to develop 3 nm semiconductor node technology, following reports of the company setting up 5 nm chip production for Huawei later this year. This move is part of SMIC's efforts to achieve independence from foreign companies and reduce its reliance on US technology. According to a report from Joongang, SMIC's initial goal is to commence operations of its 5 nm production line, which will mass-produce Huawei chipsets for various products, including AI silicon. However, SMIC is already looking beyond the 5 nm node. The company has assembled an internal research and development team to begin work on the next-generation 3 nm node.

The Chinese manufacturer is expected to accomplish this using existing DUV machinery, as ASML, the sole supplier of advanced EUV technology, is prohibited from providing equipment to Chinese companies due to US restrictions. It is reported that one of the biggest challenges facing SMIC is the potential for low yields and high production costs. The company is seeking substantial subsidies from the Chinese government to overcome these obstacles. Receiving government subsidies will be crucial for SMIC, especially considering that its 5 nm chips are expected to be up to 50 percent more expensive than TSMC's due to the use of older DUV equipment. The first 3 nm wafers from SMIC are not expected to roll out for several years, as the company will prioritize the commercialization of Huawei's 5 nm chips. This ambitious undertaking by SMIC represents a significant challenge for the company as it strives to reduce its dependence on foreign semiconductor technology and establish itself as an essential player in the global manufacturing industry.

Intel CEO Discloses TSMC Production Details: N3 for Arrow Lake & N3B for Lunar Lake

Intel CEO Pat Gelsinger engaged with press/media representatives following the conclusion of his IFS Direct Connect 2024 keynote speech—when asked about Team Blue's ongoing relationship with TSMC, he confirmed that their manufacturing agreement has advanced from "5 nm to 3 nm." According to a China Times news article: "Gelsinger also confirmed the expansion of orders to TSMC, confirming that TSMC will hold orders for Intel's Arrow and Lunar Lake CPU, GPU, and NPU chips this year, and will produce them using the N3B process, officially ushering in the Intel notebook platform that the outside world has been waiting for many years." Past leaks have indicated that Intel's Arrow Lake processor family will have CPU tiles based on their in-house 20A process, while TSMC takes care of the GPU tile aspect with their 3 nm N3 process node.

That generation is expected to launch later this year—the now "officially confirmed" upgrade to 3 nm should produce pleasing performance and efficiency improvements. The current crop of Core Ultra "Meteor Lake" mobile processors has struggled with the latter, especially when compared to rivals. Lunar Lake is marked down for a 2025 launch window, so some aspects of its internal workings remain a mystery—Gelsinger has confirmed that TSMC's N3B is in the picture, but no official source has disclosed their in-house manufacturing choice(s) for LNL chips. Wccftech believes that Lunar Lake will: "utilize the same P-Core (Lion Cove) and brand-new E-Core (Skymont) core architecture which are expected to be fabricated on the 20A node. But that might also be limited to the CPU tile. The GPU tile will be a significant upgrade over the Meteor Lake and Arrow Lake CPUs since Lunar Lake ditches Alchemist and goes for the next-gen graphics architecture codenamed "Battlemage" (AKA Xe2-LPG)." Late January whispers pointed to Intel and TSMC partnering up on a 2 nanometer process for the "Nova Lake" processor generation—perhaps a very distant prospect (2026).

AMD "Zen 5c" CCDs Made On More Advanced 3 nm Node Than "Zen 5"

AMD is reportedly building its upcoming "Zen 5" and "Zen 5c" CPU Core Dies (CCDs) on two different foundry nodes, a report by Chinese publication UDN, claims. The Zen 5 CCD powering the upcoming Ryzen "Granite Ridge" desktop processors, "Fire Range" mobile processors, and EPYC "Turin" server processors, will be reportedly built on the 4 nm EUV foundry node, a slightly more advanced node than the current 5 nm EUV the company is building "Zen 4" CCDs on. The "Zen 5c" CCD, or the chiplet with purely "Zen 5c" cores in a high density configuration; on the other hand, will be built on an even more advanced 3 nm EUV foundry node, the report says. Both CCDs will go into mass production in Q2-2024, with product launches expected across the second half of the year.

The "Zen 5c" chiplet has a mammoth 32 cores spread across two CCXs of 16 cores, each. Each CCX has 16 cores sharing a 32 MB L3 cache. It is to cram these 32 cores, each with 1 MB of L2 cache; and a total of 64 MB of L3 cache, that AMD could be turning to the 3 nm foundry node. Another reason could be voltages. If "Zen 4c" is anything to go by, the "Zen 5c" core is a highly compacted variant of "Zen 5," which operates at a lower voltage band than its larger sibling, without any change in IPC or instruction sets. The decision to go with 3 nm could be a move aimed at increasing clock speeds at those lower voltages, in a bid to generationally improve performance using clock speeds, besides IPC and core count. The EPYC processor with "Zen 5c" chiplets will feature no more than six such large CCDs, for a maximum core count of 192. The regular "Zen 5" CCD has just 8 cores in a single CCX, with 32 MB of L3 cache shared among the cores; and TSV provision for 3D Vertical Cache, to increase the L3 cache in special variants.
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