Walton Chaintech, one of the world's most well-known memory and storage device manufacturers, announces the availability of its latest memory clock that can reach a memory speed of 2400MHz. To address consumers' diversifying high-speed computing platform needs, this new clock is the industry's fastest computing clock with a transmission bandwidth of 19,200MB/sec per transmission. No more will users be restricted by memory bandwidth when faced with system overclocking, they will be able to maximize their computing systems' performance and potential.

The all-new APOGEE GT DDR3-2400 memory utilizes a 1.6V voltage and 9-11-10-27 timing operation process. Not only is this more powerful than many products currently in the market, different users' requests can be met as Walton Chaintech provides two-in-one KIT packs that are compatible with the widely-used dual-channel motherboards. Users do not have to worry about modular selection; system compatibility is enhanced because the KIT provides two types of capacities, 1GB x2 and 2GB x2, giving users more flexibility.

Mushkin Enhanced, a global leader in high-performance computer products, announced today the release of 'Ridgeback', a new heatsink designed for the gaming and enthusiast communities. The initial series of Ridgeback kits will offer DDR3-1600 performance for Intel's LGA1366 and LGA1156 platforms at two different latency levels, as well as a DDR2-1066 solution. In the near future, kits for AMD's AM3+ and other platforms will be available.

"The Ridgeback Project has been an exciting project for both myself and our marketing department. We've worked hard to develop this world-class memory cooling solution. Ridgeback will help ensure that modules work well in intense, high-labor scenarios and will also look elegant in many types of installations," said Brian Flood, director of product development.

Patriot today announced the launch of its new Sector 5 Series Extreme Performance DDR3 memory. Designed specifically for overclockers and enthusiasts using Intel based platforms, the Sector 5 boasts an amazing 2250MHz with timings of 9-9-9-27. Individually hand tested on the Intel P55 chipset platform; the Sector 5 modules offer incredible performance for users looking to reach new heights in overclocking and benchmarking. Engineered for the gaming enthusiast and intense overclocker, the Sector 5 is one of the fastest modules on the market and will be offered as a 4GB kit (2 x 2GB modules) under the part number PVV34G2250LLK.

"Our goal is to provide the hardcore enthusiast with a performance module that is actually going to perform at the specified timing with stability", says Les Henry, Patriot's VP of Engineering. "Consumers can feel confident that what we advertise for our speeds and timing is true to the specifications. Additionally, users can expect headroom to reach faster speeds. We have been able to hit speeds over 2400MHz with these modules in our lab."

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of a family of compatible device specifications for Serial Presence Detect (SPD) EEPROMs, Thermal Sensors (TS), and combination devices with both SPD and TS in a single package. The specifications offer advanced power management features for a wide array of applications, and may be downloaded free of charge at JEDEC.org.

"These chips are being applied in a wide range of applications from handheld devices to telecommunications equipment and data servers," said Desi Rhoden, Chairman of JEDEC's JC-42 Committee for Random Access Memory (RAM). He added, "The demand for green technologies has the industry looking for new ways to measure and conserve power. This family of devices gives a way to accurately measure temperatures to less than half a degree so that systems can automatically adjust their energy usage in response to customer's needs."

KINGMAX, leading manufacturer of DRAM Module and Flash Products, announces the high density solution for DDR3 memory for Intel Core i5 and i7, provide the most stable compatibility for desktop and laptop platforms. These DIMMs are available in single, dual and triple channel configurations and are specifically tuned for Intel CPUs; unleash the best performance for gaming operation.

KINGMAX high density solution DRAM Module improves the performance of 64 bit OS efficiently. The efficiency would be upturned after adopting KINGMAX high density DRAM Module, while operating video decoding, large image file handling and modifying and performance demanding games.

G.Skill International Co. Ltd., manufacturer of extreme performance memory and high performance solid-state storage, has today released its ultimate DDR3 memory kit. At 2400 MHz CL9 and 2000 MHz CL6, these ultra high frequency memory modules are available in standard 4GB (2GBx2) memory kits and are specifically tailored for Intel's P55 chipset and LGA-1156 CPUs.

The 2,400MHz CL9 memory modules are the fastest commercially available memory product in the world, allowing overclocking enthusiasts to reach unprecedented levels of performance to achieve the ultimate PC. In addition, G.Skill has also announced a series of ultra low latency DDR3 2,000MHz memory kits, including an extreme CL6, followed by CL7, CL8 and CL9, which perfectly match current Intel Core i5 750 and Core i7 860, 870 CPUs.

World class flash memory module manufacturer, Silicon Power announces today the new Xpower DDR3 overclocking series memory module. Complete with dual (2GBx2) and tri-channel (2GBx3) packs, it is available in DDR3-1600, 1800, 2000, 2133 MHz variants. Completely compatible with Intel quad-core Core i5 and Core i7 platforms, Xpower DDR3 modules use "oblique groove manufacturing process" and pure aluminum heat sink to resolve heat dissipation issues. In addition, Xpower DDR3 applies 1.65V to maintain high speed and stability to meet the needs of enthusiasts and gamers.

The oblique groove heat sink design of Silicon Power's Xpower DDR3 overclocking series increases the heat dissipation area of the heat sink and can provide up to twice the heat dissipation ability over standard heat sinks. In addition, the Xpower DDR3 series use 8-layered PCBs and new fly-by topology design for more efficient commands, addresses, control signals, and clocks signals. It also supports On-DIE Termination (ODT) to dramatically reduce unwanted reflection signals and maximize speed. Silicon Power insists on using original memory modules and FBGA packaging for better heat dissipation and accurate data transfer.

GeIL announces the launch of the all new DDR3 Gaming Series Black Dragon Triple Channel Kit to be added to the performance DDR3 memory module lineup. The Gaming Series DDR3 Black Dragon Triple Channel Kits will be available for the full range of speed with enhanced performance and stability by GeILs' DBT - Die-hard Burn-in Technology.

Available Speeds:

• 1066 MHz CL7&8, 1333 MHz CL6, 7&9, 1600 MHz CL7,8&9,
• 1800 MHz CL7, 8&9, 2000 MHz CL8&9, 2133 MHz CL9

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it had completed development of a 65nm XS extra-shrink version 1-Gigabit DDR3 SDRAM that is as cost-competitive as 50nm process memory devices.

In response to the slump in the DRAM market that has lasted since 2008, Elpida is taking a two-track R&D approach that focuses on conventional process migration and on layout innovations that reduce the cost of capital investment. Along with migrating to advanced processes such as 50nm and 40nm the company is developing shrunken chip versions through extensive use of existing ArF dry scanner equipment. As a result, a 65nm S shrink version was developed in 2008 and now a 65nm XS extra-shrink version has been completed.

The 65nm XS is a smaller version of the already shrunken 65nm S and delivers 25% more chips per 300mm wafer compared with its predecessor. In addition to its extremely small chip size the XS shortens the manufacturing process and helps to greatly reduce equipment costs through the use of ArF dry scanner equipment. Chips costs are comparable to 50nm process products.

Toshiba Corp. (Toshiba) and Toshiba America Electronic Components, Inc. (TAEC), its subsidiary in the Americas, today announced the launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The chip is the flagship device in a line-up of six new embedded NAND flash memory modules that offer full compliance with the latest e-MMC standard, and that are designed for application in a wide range of digital consumer products, including Smartphones, mobile phones, netbooks and digital video cameras. Samples of the 64GB module are available from today, and mass production will start in the first quarter of 2010.

The new 64GB embedded device combines sixteen pieces of 32Gbit (equal to 4GB) NAND chips fabricated with Toshiba's cutting-edge 32nm process technology, and also integrates a dedicated controller. Toshiba is the first company to succeed in combining 16 pieces of 32Gbit NAND chips, and applied advanced chip thinning and layering technologies to realize individual chips that are only 30 micrometers thick. Full compliance with the JEDEC/MMCA Version 4.4(V4.4) standard for embedded MultiMediaCards supports standard interfacing and simplifies embedding in products, reducing development burdens on product manufacturers. Toshiba offers a comprehensive line-up of single-package embedded NAND Flash memories in densities ranging from 2GB to 64GB. All integrate a controller to manage basic control functions for NAND applications, and are compatible with the latest e-MMC standard and its new features, including defining multiple storage areas and enhanced security features.

Corsair, a worldwide leader in high-performance computer and flash memory products, today announced the launch of its new Dominator GTX ultra-high performance DDR3 memory modules for Intel and AMD platforms, designed specifically for performance enthusiasts, gamers and extreme overclockers.

Corsair Dominator GTX modules are individually screened and tested on multiple high-performance Intel X58 and P55 chipset platforms to ensure that they operate at the incredible frequency of 2250MHz at low-latency timings of 8-8-8-24 at 1.65V. They are designed specifically for performance enthusiasts and overclockers who want to achieve the highest performance possible and to break benchmark world records.

Lexar Media, a leading global provider of memory products for digital media, today announced the availability of Crucial 4GB DDR3-1333MHz (PC3-10600) non-ECC UDIMM memory modules, enabling power users to max out their systems with 16GB of RAM. These new modules are compatible with the latest generation of Intel and AMD desktop processors - the Intel Core i5 and Intel Core i7 processors, as well as the AMD AM3 processors. This latest high-capacity Crucial DDR3 memory enables high-density memory installations that take advantage of 64-bit operating systems, including Microsoft Windows 7; less robust 32-bit operating systems only recognize a limited amount of installed RAM.

"Computer technology is constantly evolving, so we're committed to developing and offering a wide variety of Crucial memory products for both PC and Mac system users. Our new Crucial 4GB DDR3, high-density modules speak to this commitment; these products enable users to take advantage of newer 64-bit operating systems, as well as the latest generation of Intel and AMD processors," said Jim Jardine, Lexar Media's senior worldwide product manager.

G.Skill International Co. Ltd., manufacturer of extreme performance memory and solid-state storage with solid quality, has today released its series of very high capacity DDR3 memory: 8GB (2GBx4) and 12GB (2GBx6) memory kits.

G.Skill understands that families, business users, PC enthusiasts and gamers are often heavy multi-taskers too. Opening tens of applications to retain a workflow or several hundred photos after a family day out can put serious demands on the memory capacity, so installing 8-12GB becomes an investment in being able to do as much as you want, when you want.

Corsair, a worldwide leader in high-performance computer and flash memory products, today announced that it was voted Best Memory Manufacturer 2009 and Best PSU Manufacturer 2009 by the readers of Custom PC magazine and bit-tech.net.

Custom PC magazine and bit-tech.net, based in the United Kingdom, are two of the most highly respected and influential technology publications in the world. These awards were voted for by their audience of PC hardware enthusiasts and overclockers, and Corsair emerged as the clear winner in the Power Supply and Memory categories.

"Corsair winning the award for Best Power Supply Manufacturer for the third year running is a terrific achievement as it's a very competitive section of the marketplace where reliability and stability are key," said Alex Watson, Group Editor of Custom PC and bit-tech.net. "Corsair's award for Best Memory Manufacturer is a testament to the speed, value and design of its modules. The company also played a key role in this year's winning Dream PC, the Scan 3XS Jellyfish, supplying its chassis, solid-state drives and DDR3 memory. Congratulations to Corsair, the awards were well deserved."

GeIL announces the launch of the all new DDR3 Gaming Series Black Dragon Dual Channel & Quad Channel Kit to be added to the performance DDR3 memory module lineup.

The Gaming Series DDR3 Black Dragon will be available for the full range of speed with enhanced performance and stability by GeILs' DBT - Die-hard Burn-in Technology.

Hynix Semiconductor, Inc. has announced the Intel validation of 2Gb (Gigabit) DDR3 DRAM using 40nm class process technology.

Hynix's newly validated products are 2Gb DDR3 SDRAM component, 4GB (Gigabyte) DDR3 SODIMM (Small Outline Dual In-line Memory Module) and 2GB DDR3 UDIMM (Un-buffered Dual In-line Memory Module) at the operating speed of 1333MHz with 1.5V power supply.

The products can offer the maximum data transfer speed of 1867MHz with 16-bit I/O and 3.7GB/s (Gigabytes per second) bandwidth. The productivity of Hynix's 40nm class 2Gb DDR3 is increased by more than 60% over 50nm class process technology.

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), and Winbond Electronics Corp. today announced that they have signed a Memorandum of Understanding (MOU) for DRAM foundry services that will see Winbond manufacture DRAMs under contract to Elpida. The outsourcing agreement is the first step of a business partnership the two companies intend to pursue further.

The agreement pertains to the supply of GDDR3 and GDDR5 graphic DRAMs for Elpida. Prior to this agreement Winbond and Elpida have been working together to commercialize GDDR3 and GDDR5 DRAM products. Winbond is preparing to begin commercial production of these products by the end of 2009 while Elpida plans to begin purchasing the output in the first half of 2010.

Elpida Memory, Inc. and ProMOS Technologies announced today the signing of a DRAM foundry agreement. This agreement marks the beginning of mutually beneficial business cooperation.

According to the agreement, Elpida will provide advanced DRAM process and product technologies to ProMOS, while ProMOS will provide certain amount of manufacturing capacity at ProMOS' Taichung 300mm wafer fab to Elpida for the manufacturing of Elpida's advanced 1Gb DDR3 device. Trial runs will be completed in the first half of 2010, with mass production following in the second half of the same year.

Dr. M. L. Chen, President & Chairman of ProMOS Technologies, noted that Elpida has long been globally recognized as a leader in the development of leading edge DRAM technologies. The synergistic partnership built through this agreement will combine strengths from both companies; Elpida's 1Gb DDR3 device is among the most cost-competitive product in the industry, pairing well with ProMOS' strength in 300mm manufacturing. Dr. Chen further noted that through this agreement, ProMOS will be able to rapidly increase its capacity utilization rate at its Taichung 300mm facilities. With the recent turnaround in the DRAM market, ProMOS has embarked on the road to recovery.

The Mushkin Enhanced Design Team has once again pushed the envelope in regards to memory cooling and developed the new Copperhead Memory Cooling System. The side plates are comprised of pure copper, providing much more heat reduction than other metals.

One of the unique characteristics of the Copperhead System is the "Copperhead Watercooler". This is a quick and easy way to liquid-cool your memory modules. All that is needed is a quick, two-screw setup per memory module and Copperhead can be integrated into any existing watercooling system. The water cooler is available separately.

Memory manufacturer Kingmax announced the Hercules line of high-end DDR3 PC3-17600 memory modules for overclockers. Available in dual-channel kits for now, the Hercules can operate at 2200 MHz, with CAS latency of 10T, with DRAM voltage in the range of 1.5~1.7V. Optimized for Intel socket LGA-1156 processors, the modules support Intel Extreme Memory Profiles. Each kit includes two 2 GB modules. At 2200 MHz, each module provides a theoretical bandwidth of 17.6 GBps. There is no word on the availability or pricing.

Intel Corporation and Numonyx B.V. announced a key breakthrough in the research of phase change memory (PCM), a new non-volatile memory technology that combines many of the benefits of today's various memory types. For the first time, researchers have demonstrated a 64Mb test chip that enables the ability to stack, or place, multiple layers of PCM arrays within a single die. These findings pave the way for building memory devices with greater capacity, lower power consumption and optimal space savings for random access non-volatile memory and storage applications.

The achievements are a result of an ongoing joint research program between Numonyx and Intel that has been focusing on the exploration of multi-layered or stacked PCM cell arrays. Intel and Numonyx researchers are now able to demonstrate a vertically integrated memory cell - called PCMS (phase change memory and switch). PCMS is comprised of one PCM element layered with a newly used Ovonic Threshold Switch (OTS) in a true cross point array. The ability to layer or stack arrays of PCMS provides the scalability to higher memory densities while maintaining the performance characteristics of PCM, a challenge that is becoming increasingly more difficult to maintain with traditional memory technologies.

G.Skill International Co. Ltd., manufacturer of extreme performance memory and solid-state storage with solid quality, has today released its ECO low voltage, 1.35V dual channel DDR3 memory for Intel Lynnfield Core i5 and Core i7 platforms.

Compared to the current DDR3 standard voltage of 1.65V, G.Skill's ECO memory modules require 18% less VDIMM. This can have a great contribution to power efficiency, environmental friendliness and ultimately saves G.Skill customers money. In addition, the lower voltages decreases a system's operating temperature, resulting in improved stability. G.Skill's own internal lab tests have revealed, 1.35V memory modules produce 16% lower temperatures than standard 1.65V memory.

Overclocker/Gamer and all enthusiasts will be happy about these 2x2GB DDR3 high end memory kits with high clock rate for the P55 platform. EXCELERAM stands out due to its unrivalled price for high end memory - also for these new high end kits.

EXCELERAM offers 10 years warranty for his memory throughout Europe. Fast and direct RMA processing for endcustomers is warranted through Ironstone Distribution GmbH. Handling time normally is 5 working days. All memory is 100% hand-tested on mainboards - thereby the DOA rate (Dead On Arrival) would be almost 0%.

Georgios Kopanidis - COO of EXCELERAM says: "A couple of months we weren't in the limelight. In this time we set the course to strengthen our team of memory specialists in Germany. In the next months we will announce many new great products with our well known quality. Know-how and man-power is abound. We also will put more effort into the Overclocking segment."

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it had finished development of the smallest high-speed low-power 40nm 2-gigabit DDR3 SDRAM in the DRAM industry.

The new 2-gigabit DDR3 SDRAM uses a smaller chip size to achieve a 44% higher chip yield per wafer compared with Elpida's 50nm DDR3 SDRAM and a 100% yield for DDR3 products that operate at 1.6Gbps, the highest speed standard for current DDR3. Compared with 50nm products, it uses about two-thirds less current and supports 1.2V/1.35V operation as well as DDR3 standard 1.5V, thus reducing power consumption by as much as 45%.

Patriot Memory, a global pioneer in high-performance memory, NAND flash and computer technology, today announced the release of the Viper II DDR2 memory kits with Futuremark's 3DMark Vantage software.

Patriot Memory and Futuremark have teamed up once again to offer PC enthusiasts and overclockers the tools necessary to build the ultimate performance system. Futuremark's 3DMark Vantage, the world's #1 benchmarking software, offers consumers the chance to see how their system performs and stacks up against worldwide contention.