Wednesday, August 5th 2015

Toshiba Develops First 16-die Stacked NAND Flash Memory with TSV Technology

Toshiba Corporation today announced the development of the world's first 16-die (max.) stacked NAND flash memory utilizing Through Silicon Via (TSV) technology. The prototype will be shown at Flash Memory Summit 2015, to be held from August 11 to 13 in Santa Clara, USA.

The prior art of stacked NAND flash memories are connected together with wire bonding in a package. TSV technology instead utilizes the vertical electrodes and vias to pass through the silicon dies for the connection. This enables high speed data input and output, and reduces power consumption.
Toshiba's TSV technology achieves an I/O data rate of over 1Gbps which is higher than any other NAND flash memories with a low voltage supply: 1.8V to the core circuits and 1.2V to the I/O circuits and approximately 50%*2 power reduction of write operations, read operations, and I/O data transfers.

This new NAND flash memory provides the ideal solution for low latency, high bandwidth and high IOPS/Watt in flash storage applications, including high-end enterprise SSD.

A part of this applied technology was developed by the New Energy and Industrial Technology Development Organization (NEDO).
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1 Comment on Toshiba Develops First 16-die Stacked NAND Flash Memory with TSV Technology

Shamonto Hasan Easha
it's still gonna be late 2016 or early 2017 till these come to the market. But nonetheless, looks like our months of talking is coming to reality. TSV is indeed a technological breakthrough once implemented on NANDs. This should make TLC side of things easier.

Oh and Toshiba is also releasing BiCS TLC right? BiCS + Stacked NAND = MMMMMMMMMM!!!!!! We're talking at serious techy challenges here :)
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