Wednesday, September 19th 2018

Toshiba Memory and Western Digital Celebrate the Opening of Fab 6

Toshiba Memory Corporation and Western Digital Corporation today celebrated the opening of a new state-of-the-art semiconductor fabrication facility, Fab 6, and the Memory R&D Center, at Yokkaichi operations in Mie Prefecture, Japan. Toshiba Memory started construction of Fab 6, a dedicated 3D flash memory fabrication facility, in February 2017. Toshiba Memory and Western Digital have installed cutting-edge manufacturing equipment for key production processes including deposition and etching. Mass production of 96-layer 3D flash memory utilizing the new fab began earlier this month.

Demand for 3D flash memory is growing for enterprise servers, data centers and smartphones, and is expected to continue to expand in the years ahead. Further investments to expand its production will be made in line with market trends. The Memory R&D Center, located adjacent to Fab 6, began operations in March of this year, and will explore and promote advances in the development of 3D flash memory. Toshiba Memory and Western Digital will continue to cultivate and extend their leadership in the memory business by actively developing initiatives aimed at strengthening competitiveness, advancing joint development of 3D flash memory, and making capital investments according to market trends.
Dr. Yasuo Naruke, President and CEO of Toshiba Memory said, "We are excited about opportunities to expand the market for our latest generation of 3D flash memory. Fab 6 and Memory R&D Center enable us to maintain our position as a leading player in the 3D flash memory market. We are confident that our joint venture with Western Digital will allow us to continue producing leading edge memories at Yokkaichi."

"We are pleased to be opening Fab 6 and the Memory R&D Center with our valued partner Toshiba Memory. For nearly two decades, the successful collaboration between our companies has fostered growth and innovation of NAND flash technology," said Steve Milligan, Chief Executive Officer, Western Digital. "We are ramping production of 96-layer 3D NAND to address the full range of end market opportunities from consumer and mobile applications to cloud data centers. Fab 6 is a cutting-edge facility that will enable us to further our technology and cost leadership position in the industry."
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10 Comments on Toshiba Memory and Western Digital Celebrate the Opening of Fab 6

#1
kastriot
Excellent news! now cut half prices of ddr4//nand memory ;)
Posted on Reply
#2
dj-electric
kastriotExcellent news! now cut half prices of ddr4//nand memory ;)
Why half it, they can just give it to us for free..
Posted on Reply
#3
randomUser
kastriotExcellent news! now cut half prices of ddr4//nand memory ;)
They made a fab to produce flash memory, and you're asking to lower RAM prices? weird.
Posted on Reply
#4
dorsetknob
"YOUR RMA REQUEST IS CON-REFUSED"
All luvvie Duvvie now after the Spat they had last year
Posted on Reply
#5
kastriot
dj-electricWhy half it, they can just give it to us for free..
I agree with you they should give pro bono all their memory from this new factory next 5 years..
randomUserThey made a fab to produce flash memory, and you're asking to lower RAM prices? weird.
read more carefully you missed something
Posted on Reply
#6
Vayra86
kastriotI agree with you they should give pro bono all their memory from this new factory next 5 years..



read more carefully you missed something
No, he has a point. A fab is a major investment; if all you stand to gain from those investments (and risks!) is that you get to move more units and earn the same money in the end... well. Why build it?

I get your idea, price fixing yadayada but the idea that memory should be sitting at its ultimate low forever, is some real twisted economics.
Posted on Reply
#7
IceShroom
kastriotExcellent news! now cut half prices of ddr4//nand memory ;)
If i am not wrong Toshiba only produce NAND Flash not DRAM. Samsung/Micron(+Nanya-Micron part)/SK Hynix produce DRAM.
Posted on Reply
#8
Hood
kastriotread more carefully you missed something
I didn't see one word about DRAM, what are you reading?
Posted on Reply
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