News Posts matching "GDDR6"

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AMD Develops GDDR6 Controller for Next-generation Graphics Cards, Accelerators

This news may really not come as such; it's more of a statement in logical, albeit unconfirmed facts rather than something unexpected. AMD is working (naturally) on a GDDR6 memory controller, which it's looking to leverage in its next generations of graphics cards. This is an expected move: AMD is expected to continue using more exotic HBM memory implementations on its top tier products, but that leaves a lot of GPU space in their product stack that needs to be fed by high-speed memory solutions. With GDDR6 nearing widespread production and availability, it's only natural that AMD is looking to upgrade its controllers for the less expensive, easier to implement memory solution on its future products.

The confirmation is still worth mention, though, as it comes straight from a principal engineer on AMD's technical team, Daehyun Jun. A Linked In entry (since removed) stated that he was/is working on a DRAM controller for GDDR6 memory since September 2016. GDDR6 memory brings advantages of higher operating frequencies and lower power consumption against GDDR5 memory, and should deliver higher potential top frequencies than GDDR5X, which is already employed in top tier NVIDIA cards. GDDR6, when released, will start by delivering today's GDDR5X top speeds of roughly 14 Gbps, with a current maximum of 16 Gbps being achievable on the technology. This means more bandwidth (up-to double over current 8 Gbps GDDR5) and higher clock frequency memory. GDDR6 will be rated at 1.35 v, the same as GDDR5X.

Samsung Announces New GDDR6 Memory, 8 TB NGSFF SSD

Samsung managed to snag 36 CES 2018 Design and Innovation awards, and the company took to a press release to acknowledge the honors, and shed some light on some of its upcoming products and technologies. Of particular interest to us enthusiasts is the presence of GDDR6 memory, which Samsung says is "(...) The fastest and lowest-power DRAM for next generation, graphics-intensive applications." this new memory is expected to process images and video at 16 Gbps with 64GB/s data I/O bandwidth, which is capable of up to 5 GB/s speeds. Additionally, Samsung said the new DRAM can operate at 1.35 V, offering increased power efficiency over today's graphics memory (which typically requires 1.5 V).

Samsung also announced a NGSFF (Next-Generation Form-Factor) SSD solution, which "dramatically improves the storage capacity and performance of 1U rack servers," which allows for I/O speeds at 0.5 petabytes per second. Measuring only 30.5mm x 110mm x 4.38mm, the drive also improves space utilization and scaling options in hyper-scale datacenter servers.

Sources: Samsung, via Reddit

Micron Announces 16 Gbps Memory Speeds Achieved Over GDDR5X

Micron, who has been at the forefront in graphics memory production, has recently announced in a blog post their commitment to achieving ever increasing speeds and performance gains with their products (which isn't all that uncommon.) What this announcement has that better carves it as different and newsworthy, though, is that the company has seemingly achieved 16 Gbps speeds on GDDR5X memory - which up to now, ticked at up to 12Gbps. Some NVIDIA cards you probably know about actually had their GDDR5X memory clocked up to 12.4 Gbps.

The new achievements under GDDR5X will aid the company in better executing their vision for GDDR6 and its speed goals. Micron expects to have functional silicon of their G6 program very soon, being confident they can push products to market on early 2018. GDDR6 will bring some specific differences in regards to GDDR5X, such as dual-channel memory (GDDR5X is single-channel) and the introduction of a FBGA180 ball package with increased pitch, to accommodate these fundamental differences.

Source: Micron

SK Hynix Updates Memory Catalog to Feature GDDR6 and HBM2

South Korean DRAM and NAND flash giant SK Hynix updated its product catalog to feature its latest GDDR6 memory, besides HBM2. The company had April announced its first GDDR6 memory products. The first GDDR6 memory chips by SK Hynix come in 8 Gb (1 gigabyte) densities, and data-rates of 14 Gbps and 12 Gbps, with DRAM voltages of 1.35V. The company is giving away small quantities of these chips for product development, mass production will commence soon, and bulk availability is slated for Q4-2017. This would mean actual products implementing these chips could be available only by very-late Q4 2017, or Q1-2018.

A graphics card with 14 Gbps GDDR6 memory across a 256-bit memory bus (8 chips) features 448 GB/s of memory bandwidth. A card with 384-bit (12 chips), should have 672 GB/s at its disposal. Likewise, the 12 Gbps memory chips offer 384 GB/s in 256-bit (8-chip) setups, and 576 GB/s in 384-bit (12-chip) setups. Meanwhile, SK Hynix also updated its HBM2 catalog to feature a 32 Gb (4 gigabyte) HBM2 stack, with a clock speed of 1.60 Gbps. The 2.00 Gbps stack which featured in the Q4-2016 version of this catalog is no longer available. At 1.60 Gbps, a GPU with four stacks has 819.2 GB/s of memory bandwidth. A chip with two stacks, such as the purported "Vega 10" prototype that has made several media appearances, hence has 409.6 GB/s.

Source: SK Hynix

SK Hynix Announces its 8Gb GDDR6 Memory Chips

SK Hynix Inc. today introduced the world's fastest 2Znm 8Gb (Gigabit) GDDR6 (Graphics DDR6) DRAM. The product operates with an I/O data rate of 16 Gbps (Gigabits per second) per pin, which is the industry's fastest. With a forthcoming high-end graphics card of 384-bit I/Os, this DRAM processes up to 768 GB/s (Gigabytes of graphics data per second). SK Hynix has been planning to mass produce the product for a client to release high-end graphics card by early 2018 equipped with high performance GDDR6 DRAMs.

GDDR is specialized DRAM for processing an extensive amount of graphics data quickly according to what graphics cards command in PCs, workstations, video players and high performance gaming machines. Especially, GDDR6 is a next generation graphics solution under development of standards at JEDEC, which runs twice as fast as GDDR5 having 10% lower operation voltage. As a result, it is expected to speedily substitute for GDDR5 and GDDR5X. SK Hynix has been collaborating with a core graphics chipset client to timely mass produce the GDDR6 for the upcoming market demands.

Micron's Outlook for the Future of Memory: GDDR6, QuantX in 2017

After finally reaching mature yields (comparable to those of planar NAND processes), Micron's 32-layer first generation 3D NAND has grown increasingly prominent in the company's NAND output. Now, the company is looking to ramp-up production of their (currently sampling) 64-layer 3D NAND, promising "meaningful output" by the end of December 2017, looking for an 80% increase in total GB per wafer and a 30% decrease in production costs.

When it comes to the graphics subsystem memory, Micron is looking to transition their 20nm production to a "1x nm" (most likely 16nm) node, in a bid to improve cost per GB by around $20, with introduction of 16nm GDDR5 memory to be introduced later this year. However, GDDR5X volume is expected to grow significantly, in a bid to satisfy bandwidth-hungry uses through GPUs (like NVIDIA's GTX 1080 and potentially the upcoming 1080 Ti) and networking, with GDDR6 memory being introduced by the end of 2017 or early 2018. The company is still mum on actual consumer products based on their interpretation of the 3D XPoint products through their QuantX brand, though work is already under way on the second and third generation specifications of this memory, with Micron planning an hitherto unknown (in significance and product type) presence in the consumer market by the end of this year.

Samsung Bets on GDDR6 for 2018 Rollout

Even as its fellow-Korean DRAM maker SK Hynix is pushing for HBM3 to bring 2 TB/s memory bandwidths to graphics cards, Samsung is betting on relatively inexpensive standards that succeed existing ones. The company hopes to have GDDR6, the memory standard that succeeds GDDR5X, to arrive by 2018.

GDDR6 will serve up bandwidths of up to 16 Gbps, up from the 10 Gbps currently offered by GDDR5X. This should enable memory bandwidths of 512 GB/s over a 256-bit wide memory interface, and 768 GB/s over 384-bit. The biggest innovation with GDDR6 that sets it apart from GDDR5X is LP4X, a method with which the memory controller can more responsively keep voltages proportionate to clocks, and reduce power-draw by up to 20% over the previous standard.

Source: ComputerBase.de
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