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DDR5-6400 RAM Benchmarked on Intel Alder Lake Platform, Shows Major Improvement Over DDR4

As the industry is preparing for a shift to the new DDR standard, companies are trying to adopt the new technology and many companies are manufacturing the latest DDR5 memory modules. One of them is Shenzhen Longsys Electronics Co. Ltd, a Chinese manufacturer of memory chips, which has today demonstrated the power of DDR5 technology. Starting with this year, client platforms are expected to make a transition to the new standard, with the data center/server platform following. Using Intel's yet unreleased Alder Lake-S client platform, Longsys has been able to test its DDR5 DIMMs running at an amazing 6400 MHz speed and the company got some very interesting results.

Longsys has demoed a DDR5 module with 32 GB capacity, CAS Latency (CL) of 40 CL, operating voltage of 1.1 V, and memory modules clocked at 6400 MHz. With this being an impressive memory module, this is not the peak of DDR5. According to JEDEC specification, DDR5 will come with up to 8400 MHz speeds and capacities that are up to 128 GB per DIMM. Longsys has run some benchmarks, using an 8-core Alder Lake CPU, in AIDA64 and Ludashi. The company then proceeded to compare these results with DDR4-3200 MHz CL22 memory, which Longsys also manufactures. And the results? In AIDA64 tests, the new DDR5 module is faster anywhere from 12-36%, with the only regression seen in latency, where DDR5 is doubling it. In synthetic Ludashi Master Lu benchmark, the new DDR5 was spotted running 112% faster. Of course, these benchmarks, which you can check out here, are provided by the manufacturer, so you must take them with a grain of salt.

Chinese Manufacturer Asgard Launches 4,800 MHz DDR5 Memory Modules

In the name of Odin, Chinese manufacturer Asgard has launched their first DDR5 memory modules to market - beating some competing western companies that are still "gearing up" for it. Owned by the much less interestingly-named Shenzhen Jiahe Jinwei Electronic Technology Co., Ltd., Asgard likewise lost some of its flair in naming these DDR5 sticks - the best they could do was VMA5AUK-MMH224W3. The modules will be available in 32 GB, 64 GB and 128 GB per-stick densities.

The initial modules don't have any flair - they're built with the same green PCB that's actually the forerunner of today's colored ones. The company hs also announced that the modules win run at a relatively mild 4,800 MHz (the DDR5 specification goes up to 8,400 MHz), and that its timings coincide with JEDEC's "B" classification, which should mean 40-40-40. The voltage likewise remains at the JEDEC-set standard of 1.1 V. The company announced that mass-production rollout will only occur after there are actual CPUs and platforms that can take advantage of the DDR5 memory spec, and said that they expect Intel's Alder-Lake, Sapphire Rapids and Tiger Lake-U from the blue team, as well as Van Gogh and Rembrandt APUs from the AMD camp. No word on consumer pricing was available at time of writing.

JEDEC Publishes DDR4 NVDIMM-P Bus Protocol Standard

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD304-4.01 DDR4 NVDIMM-P Bus Protocol. The JEDEC NVDIMM-P standard will enable the industry to create advanced memory solutions that benefit from the enhanced system performance and novel data availability offered by Persistent Memory devices. JESD304-4.01 DDR4 NVDIMM-P is available for download from the JEDEC website.

As demand for DRAM capacity and bandwidth continues to grow, Hybrid DIMM technologies such as NVDIMM-P provide an innovative method for attaching emerging Persistent Memory in computing systems. Combining the access speeds of DDR with the reliability and capacity of non-volatile memories gives design engineers a new approach to data management. Much more than a standard DIMM specification, NVDIMM-P provides a full transactional interface protocol compatible with standard DRAM DIMMs along with a firmware programming model for the modules. NVDIMM-P simultaneously maximizes both re-use and flexibility by minimizing system host changes, providing an interface of the lowest latency to emerging memory, and offering flexible support for varied Persistent Memory media characteristics and use cases.

ADATA Unveils Industrial-grade IEM5141A eMMC

ADATA Technology, a manufacturer of high-performance DRAM modules, NAND Flash products, mobile accessories, gaming products, electric power trains, and industrial solutions, today announces the ADATA IEM5141A embedded multi media cards. Ideally suited for industrial and IoT applications, the ADATA IEM5141A meets JEDEC eMMC 5.1 HS400 standard that delivers high read/write speeds of up to 300/170 MB/s,and low-power consumption of optimized performance.

The IEM5141A is a fully integrated device with built-in controllerand NAND Flash for higher capacities, durability, and perfectly suited for space-constrained IPCs and server boot-up applications. Furthermore, the IEM5141A offers Auto sleep on/off mode for low power consumption, Partitioning Management, and Thermal Throttling. It also features wide-temperature operability (-40°C - +85°C) and a 3,000 P/E cycle for excellent stability and reliability.

JEDEC Advances Universal Flash Storage (UFS) Removable Card Standard 3.0

JEDEC Solid State Technology Association, the worldwide leader in the development of standards for the microelectronics industry, today announced the publication of JESD220-2B Universal Flash Storage (UFS) Card Extension Standard 3.0. This new version of the removable memory card standard defines functionality closely aligned with the popular UFS 3.0 embedded device standard already widely recognized in many high-end mobile and consumer-focused applications. JESD220-2B is now available for download from the JEDEC website.

UFS is a prominent high-performance interface designed for use in applications where power consumption needs to be minimized, including mobile systems such as smartphones and tablets as well as for automotive and IOT applications. Its high-speed serial interface and optimized protocol enable major improvements in throughput and system performance.

TEAMGROUP is Taking the Global Lead in the New DDR5 Generation

As a world leader in computer memory, TEAMGROUP understands the importance of getting ahead in the next generation of DDR technology, hence it will be releasing ELITE series DDR5 memory in 2021. With over 20 years of experience developing DDR3 and DDR4 products, the company has dazzled the world with its advanced R&D capabilities and excellent product quality. After the JEDEC announced the DDR5 memory standard, TEAMGROUP has been actively designing and working together with our IC manufacturing partners to pioneer and prepare for this new generation.

TEAMGROUP is leading the way with its first DDR5 memory under its global top-selling ELITE memory product line. It plans to release a 16 GB 4800 MHz module operating at 1.1 V, down from the 1.2 V of the previous generation. The data transfer rate is increased to 4,800-5,200 Mbps, an increase of up to 1.6 times while reducing power consumption by 10%. Today's DDR4 memory with error correction code (ECC) requires an additional chip installed on the PCB, whereas DDR5 supports on-die ECC, a feature that self-corrects single-bit errors, greatly improving system stability. Anticipation is high for the efficiency improvements brought by the new generation, which can be utilized for big data and AI computing and other related applications.

Possible Radeon RX 6700 XT Specs Surface, 12GB the New Mid-Range Memory Size?

AMD could follow up on its RX 6800 series and RX 6900 XT launches with the RX 6700 series, which logically succeeds the RX 5700 series, and competes with NVIDIA's RTX 3060/Ti. Patrick Schur on Twitter, who has a high hit-rate with specs of upcoming AMD products, put out possible specs of the RX 6700 series. Both are based on the new "Navi 22" silicon, with an interesting set of specifications.

Apparently 12 GB could be AMD's new memory amount for the mid-range. It's unknown whether the 12 GB is running over a 192-bit wide memory interface (6x 16 Gbit chips), or whether AMD is using mixed-density chips over a 256-bit wide memory bus (think 4x 16 Gbit and 4x 8 Gbit), because even the fastest JEDEC-standard GDDR6 chips, running at 16 Gbps, would only yield 384 GB/s memory bandwidth, which is less than the 448 GB/s the RX 5700 series enjoy. Perhaps an Infinity Cache is deployed to make up the difference?

SK hynix Launches World's First DDR5 DRAM

SK hynix Inc. announced to launch world's first DDR5 DRAM. It is a high-speed and high-density product optimized for Big Data, Artificial Intelligence (AI), and machine learning (ML) as a next generation standard of DRAM. Since SK hynix announced the development of World's First 16 Gigabit (Gb) DDR5 DRAM on November 2018, the Company has provided its major partners including Intel with sample products, and has completed various tests and verification of its functions and compatibility. This will allow SK hynix to provide its customers with the products once the DDR5 market becomes active.

In the meantime, SK hynix has conducted joint-operation of on-site lab, system-level test, and simulation with System-on-Chip) (SoC) manufacturers to verify the functions of DDR5. Also, the Company validated compatibility of its DDR5 and the major components on DRAM module including register clock driver) (RCD), which affect DRAM performance, and power management integrated circuit) (PMIC). Through these verifications, SK hynix has been collaborating closely with its global partners.

JEDEC Publishes New DDR5 Standard for Advancing Next-Generation High Performance Computing Systems

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of the widely-anticipated JESD79-5 DDR5 SDRAM standard. The standard addresses demand requirements being driven by intensive cloud and enterprise data center applications, providing developers with twice the performance and much improved power efficiency. JESD79-5 DDR5 is now available for download from the JEDEC website.

DDR5 was designed to meet increasing needs for efficient performance in a wide range of applications including client systems and high-performance servers. DDR5 incorporates memory technology that leverages and extends industry know-how and experience developing previous DDR memories. The standard is architected to enable scaling memory performance without degrading channel efficiency at higher speeds, which has been achieved by doubling the burst-length to BL16 and bank-count to 32 from 16. This revolutionary architecture provides better channel efficiency and higher application level performance that will enable the continued evolution of next-generation computing systems. In addition, the DDR5 DIMM has two 40-bit fully independent sub-channels on the same module for efficiency and improved reliability.

New features, such as DFE (Decision Feedback Equalization), enable IO speed scalability for higher bandwidth and improved performance. DDR5 supports double the bandwidth as compared to its predecessor, DDR4, and is expected to be launched at 4.8 Gbps (50% higher than DDR4's end of life speed of 3.2 Gbps).

SK Hynix Unveils DDR5 Memory Details, Production to Start This Year

SK Hynix has today posted an update on their blog about the upcoming DDR5 memory, which they have developed in co-respondence with JEDEC's progression of the standard. They have noted a few key things, among which some of the most interesting are features like the maximum speed of 8400 Mbps. The DDR5 standard is very flexible, allowing manufacturers to release their chips with frequencies ranging anywhere from 3200-8400 Mbps. While the lowest speed is 3200 Mbps, manufacturers are starting with 4800 Mbps chips and building their way up from there. The minimum density of a single DDR5 die is 8 Gb, while the maximum is 64 Gb, quadrupling the maximum capacity of DDR4 dies.

Perhaps one of the biggest changes besides capacity and speed improvements is the addition of Error-Correcting Code (ECC) support for memory. This feature is now not exclusive to special dies, like with DDR4, but rather is built inside every die. The DDR5 memory chips use 32 banks, split into 8 bank groups, which is designed to provide as much bandwidth as possible. Burst Length is doubled to 16, compared to 8 of DDR4, so memory access availability is better. Operating Voltage is decreased to 1.1 V, from the previous 1.2 V of DDR4, resulting in an overall decrease of 20% of power consumption. The mass production of SK-Hynix's DDR5 chips will start this year, however, exact timing is unknown.
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DDR5 Arrives at 4800 MT/s Speeds, First SoCs this Year

Cadence, a fabless semiconductor company focusing on the development of IP solutions and IC design and verification tools, today posted an update regarding their development efforts for the 5th generation of DDR memory which is giving us some insights into the development of a new standard. The new DDR5 standard is supposed to bring better speeds and lower voltages while being more power-efficient. In the Cadence's blog called Breakfast Bytes, one of Cadence's memory experts talked about developments of the new standards and how they are developing the IP for the upcoming SoC solutions. Even though JEDEC, a company developing memory standards, hasn't officially published DDR5 standard specifications, Cadence is working closely with them to ensure that they stay on track and be the first on the market to deliver IP for the new standard.

Marc Greenberg, a Cadence expert for memory solutions was sharing his thoughts in the blog about the DDR5 and how it is progressing. Firstly, he notes that DDR5 is going to feature 4800 MT/s speeds at first. The initial speeds will improve throughout the 12 months when the data transfer rate will increase in the same fashion we have seen with previous generation DDR standards. Mr. Greenberg also shared that the goals of DDR5 are to have larger memory dies while managing latency challenges, same speed DRAM core as DDR4 with a higher speed I/O. He also noted that the goal of the new standard is not the bandwidth, but rather capacity - there should be 24Gb of memory per die initially, while later it should go up to 32Gb. That will allow for 256 GB DIMMs, where each byte can be accessed under 100 ns, making for a very responsive system. Mr. Greenberg also added that this is the year of DDR5, as Cadence is receiving a lot of orders for their 7 nm IP which should go in production systems this year.
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KIOXIA America Debuts UFS Ver. 3.1 Embedded Flash Memory Devices

Further cementing its position as a leading provider of storage for next-gen mobile devices, KIOXIA America, Inc. (formerly Toshiba Memory America, Inc.), the U.S.-based subsidiary of KIOXIA Corporation, today announced that it has started sampling Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices. Well suited for mobile applications requiring high-performance with low power consumption, the new lineup utilizes KIOXIA's cutting-edge BiCS FLASH 3D flash memory and is supported in four capacities: 128 gigabytes (GB), 256 GB, 512 GB, and 1 terabyte (TB).

The new devices integrate BiCS FLASH 3D flash memory and a controller in a JEDEC-standard 11.5 x 13 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation, and bad-block management for simplified system development. "KIOXIA was the first company to introduce UFS in 2013[4] and the first to offer UFS Ver. 3.0 last year and we continue to be at the forefront of UFS memory with this Ver. 3.1 announcement today," noted Scott Beekman, director of managed flash memory products for KIOXIA America, Inc. "Our newest offerings enable next-gen mobile devices to take full advantage of the connectivity benefits of 5G, leading to faster downloads and reduced lag time - and an improved user experience."

SMART Modular Launches 32GB Low-profile DDR4-3200 Mini-DIMMs for Industrial Applications

SMART Modular Technologies, Inc., a subsidiary of SMART Global Holdings, Inc., and a leader in specialty memory, storage and hybrid solutions including memory modules, Flash memory cards and other solid state storage products,today announced its lineup of DDR4-3200 32 GB Low Profile industrial Mini-DIMMs. SMART has several new 32 GB Mini-DIMMs which include ULP (Ultra Low Profile) and VLP (Very Low Profile) with registered and unbuffered ECC options to meet a wide range of use cases. SMART has been providing Mini-DIMM support for many years, offering customers long-term support as well as a solid roadmap of new higher-density, higher-speed options.

SMART's DDR4-3200 32 GB industrial Mini-DIMMs undergo stringent in-house environmental temperature screening to operate between -40 °C to +85 °C which makes SMART's DDR4 Mini-DIMMs an ideal solution for telecom and networking equipment being deployed under harsh operating conditions. Customized ruggedizing features can be added, such as conformal coating and anti-sulfur resistors to protect against toxic operating conditions or underfill for excessive vibration, all to allow reliable, long-term system operation.

GIGABYTE Rolls Out Designare DDR4-3200 High-Capacity 64GB (2x 32GB) Memory for Creators

The Designare brand of motherboards by GIGABYTE target content creators, and the company is extending the brand to memory, with the new Designare Memory series. It debuts with a high-capacity 64 GB dual-channel memory kit using two 32 GB modules. The rationale behind these densities is that creators may need them to deal with large data-sets. These are not off-spec "double height" modules, but are common dual-rank modules that stick to JEDEC compatibility spec, and pack XMP profiles that can run them at DDR4-3200 with 16-18-18-38 timings at 1.35 V.

GIGABYTE has tested these modules to work on all of its AMD X570, AMD B450, AMD TRX40, Intel X299, and Intel Z390 motherboards. For X570 and B450, however, the company states that only 3rd generation "Matisse" processors can handle this memory density. In its compatibility testing, GIGABYTE used 18-19-19-39 timings. Physically, the Designare modules have regular 32 mm height, a black PCB, and aluminium heatspreaders. GIGABYTE is backing the modules with lifetime warranty. The company didn't reveal pricing.

JEDEC Publishes Update to Universal Flash Storage (UFS) Standard

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of Universal Flash Storage (UFS) version 3.1, JESD220E. In addition, an optional new companion standard, JESD220-3: UFS Host Performance Booster (HPB) Extension, has also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 3.1 introduces new features intended to help maximize device performance while minimizing power usage. Both JESD220E and JESD220-3 are available for download from the JEDEC website.

Micron Start Sampling DDR5 RDIMMs

Micron has today announced that it started sampling RDIMMs based on DDR5 technology to its industry partners. Designed for server operations, these DDR5 modules come in RDIMM form-factor and feature Error-Correcting Code (ECC) technology for removing any error that occurs inside electronic circuits. The new DDR5 standard offers a massive performance uplift compared to the previous generation of DDR4 memory. For starters, DDR5 will double the MT/s transfer rate to 6400 MT/s, double the speed of the original 3200 MT/s speed for DDR4 that was established by JEDEC. The bandwidth of the new DDR memory is supposed to be 32 GB/s, which is 25% faster than the original 25.6 GB/s bandwidth of DDR4.

With DDR5, the SDRAM prefetch buffer data size is being doubled to 16 data words per memory access, making for a 16n prefetching throughput. Another improvement is that the highest possible density for DDR5 chips is now being up to 64 Gb per chip. Additionally, DDR5 is supposed to bring the power needed for chip operation down to 1.1 volts, which is around 8% lower than what DDR4 achieved. There are also features like MIR (Mirror Pin) which provides better DIMM signaling, and more options for PRECHARGE and REFRESH commands that can now operate on a per bank basis, so specific banks can be refreshed in bank group. It is also worth pointing out that DDR5 chips are manufactured using 1znm memory manufacturing process.

KIOXIA America Introduces Industry's First 512GB Automotive UFS

The next generation of automotive systems are hungry for more. More advanced infotainment and ADAS1 systems. More storage for event data recording. Support for more 3D mapping. In a move that makes more a reality, KIOXIA America, Inc. (formerly Toshiba Memory America, Inc.), the U.S.-based subsidiary of KIOXIA Corporation, today announced that it has begun sampling the industry's first 512 gigabyte (GB) Automotive Universal Flash Storage (UFS) JEDEC Version 2.1 embedded memory solution. KIOXIA America's Automotive UFS supports a wide temperature range (-40°C to +105°C), meets AEC-Q100 Grade 2 requirements and offers the extended reliability required by various automotive applications. The 512 GB device joins the company's existing lineup of Automotive UFS, which includes capacities of 16 GB, 32 GB, 64 GB, 128 GB, and 256 GB.

Innovations such as autonomous vehicles, more advanced infotainment systems, digital clusters, telematics, and ADAS provide not only an elevated driver experience but also a greater demand for storage within vehicles.

Patriot Expands its Viper 4 Series with AMD 3rd Gen Ryzen-Optimized Models

PATRIOT and Viper Gaming, a global leader in performance memory, SSDs, gaming peripherals, and flash storage solutions, announced the release of a new addition to their Viper 4 series line today. The Viper 4 DDR4 Blackout series is designed to be a PC-Build-friendly with a potential for overclocking and more extensive compatibility across various Intel and AMD platforms. The whole new matte-black heat spreader design covers a high-quality black PCB and offers a stylishly understated memory kit designed for PC enthusiasts, modders, and system builders. The Viper 4 Blackout series is available in frequencies of 3000 MHz up to 4000 MHz and is fully compatible with the latest 3rd Gen AMD Ryzen Desktop Processors and AMD X570 motherboards.

The all-black color theme matches any high-end system component from motherboards and graphics cards down to gaming cases and system coolers. The Viper Gaming team was inspired to create this highly tweakable memory kit in a sleek and stylish matte black aluminum heat spreader, and 100% compatible with current JEDEC memory standards.

ADATA Shows Off a JEDEC-compliant 32GB Dual-rank DIMM That Isn't "Double Capacity"

Last year, with the introduction of the Intel Z390 chipset, there was a spate of so-called "double capacity DIMMs" or DC DIMMs, tall memory modules with two rows of DRAM chips, which added up to 32 GB per DIMM. You needed a Z390 platform and a 9th generation Core processor that supported up to 128 GB of memory, to use these things. With the introduction of 16 Gb DDR4 DRAM chips by both Micron and Samsung, JEDEC-compliant 32 GB unbuffered DIMMs of standard height are finally possible, and ADATA put together the first of these, shown off at Computex 2019.

The AD4U2666732GX16 is a 32-gigabyte dual-rank unbuffered DIMM made using 16 Gb chips supplied by Micron Technology. The modules tick at JEDEC-standard DDR4-2666 speeds, at a module voltage of 1.2 Volts. ADATA didn't disclose timings. The 16 Gb DRAM chips are made by Micron in an advanced (3rd generation) 10 nm-class silicon fabrication process to achieve the desired transistor-density. 32 GB DIMMs are expected to hit critical-mass in 2H-2019/2020, with the advent of AMD's 3rd generation Ryzen "Matisse," and Intel's "Ice Lake-S" desktop processors. Memory manufacturers are also expected to put out speedy and highly-compatible single-rank 16-gigabyte DIMMs using 16 Gb chips, which could finally make 32 GB dual-channel the mainstream memory configuration, moving up from half a decade of 2x 8 GB.

AMD Zen 2 CPUs to Support Official JEDEC 3200 MHz Memory Speeds

An AMD-based system's most important performance pairing lies in the CPU and system RAM, as a million articles written ever since the introduction of AMD's first generation Ryzen CPUs have shown (remember the races for Samsung B-die based memory?). There are even tools that allow you to eke out the most performance out of your AMD system via fine memory overclocking and timings adjustment, which just goes to show the importance the enthusiast community derives from such tiny details that maximize your AMD Zen-based CPU performance. Now, notorious leaker @momomo_us has seemingly confirmed that AMD has worked wonders on its memory controller, achieving a base JEDEC 3200 MHz specification - up from the previously officially supported DDR4-2666 speeds in the first-gen Ryzen (updated to DDR4-2933 speeds on the 12 nm update).

Ballistix DRAM Crushes World DDR4 Overclocking Record at 5726MT/s

Ballistix, Micron's gaming memory brand, is now the official overclocking world record holder. Overclockers used the Ballistix Elite 3600MT/s to set a new overclocking record for the fastest DDR4 memory frequency at a blistering 5726 MT/s. That's 79 percent faster than the max JEDEC DDR4 speed of 3200 MT/s and 115 percent faster than the 2666 MT/s considered mainstream today.

How's that for a speed run? Yes, this record is a big, big, (big, big) deal to us here at Ballistix. But we care just as much about how we earned the top mark. We're proud that we were able to use the same CAS latency - CL24 - used by most of the previous record holders. In addition, we set the record using the same production module of the Ballistix Elite 3600 available to gamers today.

Western Digital Announces Automotive-grade iNAND EM132 eMMC Storage

Western Digital Corp. is addressing the automotive industry's increasing need for storage by equipping vehicle manufacturers and system solution providers with the technology and capacity to support both current and future applications including e-cockpits, Artificial Intelligence (AI) databases, ADAS, advanced infotainment systems, and autonomous computers. As the first 256GB e.MMC using 64-Layer 3D NAND TLC flash technology in the automotive market, the new Western Digital iNAND AT EM132 EFD extends the life of e.MMC beyond 2D NAND to meet evolving application needs and growing capacity requirements.

According to Neil Shah, partner and research director, Counterpoint Research, "Storage is one of the fastest growing semiconductor applications in a connected autonomous car. The advanced in-vehicle infotainment (IVI), AI and sensor-driven autonomous driving systems generate large amounts of data that needs to be processed and stored locally at the edge. The average capacity of storage required per vehicle is expected to balloon beyond 2TB by 2022."

Toshiba Adds BiCS FLASH Enabled UFS to Lineup of Embedded Automotive Memory Products

Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has begun sampling new Automotive JEDEC UFS Version 2.1 embedded memory solutions utilizing 3D flash memory. The new products are embedded flash memory devices that integrate the company's BiCS FLASH 3D flash memory and a controller in a single package. The sequential read and write performance are improved by approximately 6 percent and 33 percent, respectively, over existing devices.

The company's Automotive UFS supports a wide temperature range (-40°C to +105°C), meets AEC-Q100 Grade 2 requirements and offers the enhanced reliability required by various automotive applications. The lineup consists of four capacities: 32GB, 64GB, 128GB, and 256GB.

Toshiba Unveils BiCS Flash Based e-MMC Ver. 5.1 Devices

Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, today announced that it will begin sampling new JEDEC e-MMC Ver. 5.1 compliant embedded flash memory products for consumer applications next month. The new products integrate the company's BiCS FLASH 3D flash memory and a controller in a single package. The company will continue to reinforce its market-leading position by delivering a broad, high-performance product lineup, including for applications that continue to need e-MMC as an embedded memory solution.

JEDEC Updates Standard for Low Power Memory Devices: LPDDR5

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-5, Low Power Double Data Rate 5 (LPDDR5). LPDDR5 will eventually operate at an I/O rate of 6400 MT/s, 50% higher than that of the first version of LPDDR4, which will significantly boost memory speed and efficiency for a variety of applications including mobile computing devices such as smartphones, tablets, and ultra-thin notebooks. In addition, LPDDR5 offers new features designed for mission critical applications such as automotive. Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, LPDDR5 is available for download from the JEDEC website.

With the doubling of memory throughput over the previous version of the standard (LPDDR5 is being published with a data rate of 6400 MT/s, compared to 3200 MT/s for LPDDR4 at its publication in 2014), LPDDR5 promises to have an enormous impact on the performance and capabilities of the next generation of portable electronic devices. To achieve this performance improvement, LPDDR5 architecture was redesigned; moving to 16Banks programmable architecture and multi-clocking architecture.
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