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SK Hynix Unveils DDR5 Memory Details, Production to Start This Year

SK Hynix has today posted an update on their blog about the upcoming DDR5 memory, which they have developed in co-respondence with JEDEC's progression of the standard. They have noted a few key things, among which some of the most interesting are features like the maximum speed of 8400 Mbps. The DDR5 standard is very flexible, allowing manufacturers to release their chips with frequencies ranging anywhere from 3200-8400 Mbps. While the lowest speed is 3200 Mbps, manufacturers are starting with 4800 Mbps chips and building their way up from there. The minimum density of a single DDR5 die is 8 Gb, while the maximum is 64 Gb, quadrupling the maximum capacity of DDR4 dies.

Perhaps one of the biggest changes besides capacity and speed improvements is the addition of Error-Correcting Code (ECC) support for memory. This feature is now not exclusive to special dies, like with DDR4, but rather is built inside every die. The DDR5 memory chips use 32 banks, split into 8 bank groups, which is designed to provide as much bandwidth as possible. Burst Length is doubled to 16, compared to 8 of DDR4, so memory access availability is better. Operating Voltage is decreased to 1.1 V, from the previous 1.2 V of DDR4, resulting in an overall decrease of 20% of power consumption. The mass production of SK-Hynix's DDR5 chips will start this year, however, exact timing is unknown.
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DDR5 Arrives at 4800 MT/s Speeds, First SoCs this Year

Cadence, a fabless semiconductor company focusing on the development of IP solutions and IC design and verification tools, today posted an update regarding their development efforts for the 5th generation of DDR memory which is giving us some insights into the development of a new standard. The new DDR5 standard is supposed to bring better speeds and lower voltages while being more power-efficient. In the Cadence's blog called Breakfast Bytes, one of Cadence's memory experts talked about developments of the new standards and how they are developing the IP for the upcoming SoC solutions. Even though JEDEC, a company developing memory standards, hasn't officially published DDR5 standard specifications, Cadence is working closely with them to ensure that they stay on track and be the first on the market to deliver IP for the new standard.

Marc Greenberg, a Cadence expert for memory solutions was sharing his thoughts in the blog about the DDR5 and how it is progressing. Firstly, he notes that DDR5 is going to feature 4800 MT/s speeds at first. The initial speeds will improve throughout the 12 months when the data transfer rate will increase in the same fashion we have seen with previous generation DDR standards. Mr. Greenberg also shared that the goals of DDR5 are to have larger memory dies while managing latency challenges, same speed DRAM core as DDR4 with a higher speed I/O. He also noted that the goal of the new standard is not the bandwidth, but rather capacity - there should be 24Gb of memory per die initially, while later it should go up to 32Gb. That will allow for 256 GB DIMMs, where each byte can be accessed under 100 ns, making for a very responsive system. Mr. Greenberg also added that this is the year of DDR5, as Cadence is receiving a lot of orders for their 7 nm IP which should go in production systems this year.
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KIOXIA America Debuts UFS Ver. 3.1 Embedded Flash Memory Devices

Further cementing its position as a leading provider of storage for next-gen mobile devices, KIOXIA America, Inc. (formerly Toshiba Memory America, Inc.), the U.S.-based subsidiary of KIOXIA Corporation, today announced that it has started sampling Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices. Well suited for mobile applications requiring high-performance with low power consumption, the new lineup utilizes KIOXIA's cutting-edge BiCS FLASH 3D flash memory and is supported in four capacities: 128 gigabytes (GB), 256 GB, 512 GB, and 1 terabyte (TB).

The new devices integrate BiCS FLASH 3D flash memory and a controller in a JEDEC-standard 11.5 x 13 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation, and bad-block management for simplified system development. "KIOXIA was the first company to introduce UFS in 2013[4] and the first to offer UFS Ver. 3.0 last year and we continue to be at the forefront of UFS memory with this Ver. 3.1 announcement today," noted Scott Beekman, director of managed flash memory products for KIOXIA America, Inc. "Our newest offerings enable next-gen mobile devices to take full advantage of the connectivity benefits of 5G, leading to faster downloads and reduced lag time - and an improved user experience."

SMART Modular Launches 32GB Low-profile DDR4-3200 Mini-DIMMs for Industrial Applications

SMART Modular Technologies, Inc., a subsidiary of SMART Global Holdings, Inc., and a leader in specialty memory, storage and hybrid solutions including memory modules, Flash memory cards and other solid state storage products,today announced its lineup of DDR4-3200 32 GB Low Profile industrial Mini-DIMMs. SMART has several new 32 GB Mini-DIMMs which include ULP (Ultra Low Profile) and VLP (Very Low Profile) with registered and unbuffered ECC options to meet a wide range of use cases. SMART has been providing Mini-DIMM support for many years, offering customers long-term support as well as a solid roadmap of new higher-density, higher-speed options.

SMART's DDR4-3200 32 GB industrial Mini-DIMMs undergo stringent in-house environmental temperature screening to operate between -40 °C to +85 °C which makes SMART's DDR4 Mini-DIMMs an ideal solution for telecom and networking equipment being deployed under harsh operating conditions. Customized ruggedizing features can be added, such as conformal coating and anti-sulfur resistors to protect against toxic operating conditions or underfill for excessive vibration, all to allow reliable, long-term system operation.

GIGABYTE Rolls Out Designare DDR4-3200 High-Capacity 64GB (2x 32GB) Memory for Creators

The Designare brand of motherboards by GIGABYTE target content creators, and the company is extending the brand to memory, with the new Designare Memory series. It debuts with a high-capacity 64 GB dual-channel memory kit using two 32 GB modules. The rationale behind these densities is that creators may need them to deal with large data-sets. These are not off-spec "double height" modules, but are common dual-rank modules that stick to JEDEC compatibility spec, and pack XMP profiles that can run them at DDR4-3200 with 16-18-18-38 timings at 1.35 V.

GIGABYTE has tested these modules to work on all of its AMD X570, AMD B450, AMD TRX40, Intel X299, and Intel Z390 motherboards. For X570 and B450, however, the company states that only 3rd generation "Matisse" processors can handle this memory density. In its compatibility testing, GIGABYTE used 18-19-19-39 timings. Physically, the Designare modules have regular 32 mm height, a black PCB, and aluminium heatspreaders. GIGABYTE is backing the modules with lifetime warranty. The company didn't reveal pricing.

JEDEC Publishes Update to Universal Flash Storage (UFS) Standard

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of Universal Flash Storage (UFS) version 3.1, JESD220E. In addition, an optional new companion standard, JESD220-3: UFS Host Performance Booster (HPB) Extension, has also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 3.1 introduces new features intended to help maximize device performance while minimizing power usage. Both JESD220E and JESD220-3 are available for download from the JEDEC website.

Micron Start Sampling DDR5 RDIMMs

Micron has today announced that it started sampling RDIMMs based on DDR5 technology to its industry partners. Designed for server operations, these DDR5 modules come in RDIMM form-factor and feature Error-Correcting Code (ECC) technology for removing any error that occurs inside electronic circuits. The new DDR5 standard offers a massive performance uplift compared to the previous generation of DDR4 memory. For starters, DDR5 will double the MT/s transfer rate to 6400 MT/s, double the speed of the original 3200 MT/s speed for DDR4 that was established by JEDEC. The bandwidth of the new DDR memory is supposed to be 32 GB/s, which is 25% faster than the original 25.6 GB/s bandwidth of DDR4.

With DDR5, the SDRAM prefetch buffer data size is being doubled to 16 data words per memory access, making for a 16n prefetching throughput. Another improvement is that the highest possible density for DDR5 chips is now being up to 64 Gb per chip. Additionally, DDR5 is supposed to bring the power needed for chip operation down to 1.1 volts, which is around 8% lower than what DDR4 achieved. There are also features like MIR (Mirror Pin) which provides better DIMM signaling, and more options for PRECHARGE and REFRESH commands that can now operate on a per bank basis, so specific banks can be refreshed in bank group. It is also worth pointing out that DDR5 chips are manufactured using 1znm memory manufacturing process.

KIOXIA America Introduces Industry's First 512GB Automotive UFS

The next generation of automotive systems are hungry for more. More advanced infotainment and ADAS1 systems. More storage for event data recording. Support for more 3D mapping. In a move that makes more a reality, KIOXIA America, Inc. (formerly Toshiba Memory America, Inc.), the U.S.-based subsidiary of KIOXIA Corporation, today announced that it has begun sampling the industry's first 512 gigabyte (GB) Automotive Universal Flash Storage (UFS) JEDEC Version 2.1 embedded memory solution. KIOXIA America's Automotive UFS supports a wide temperature range (-40°C to +105°C), meets AEC-Q100 Grade 2 requirements and offers the extended reliability required by various automotive applications. The 512 GB device joins the company's existing lineup of Automotive UFS, which includes capacities of 16 GB, 32 GB, 64 GB, 128 GB, and 256 GB.

Innovations such as autonomous vehicles, more advanced infotainment systems, digital clusters, telematics, and ADAS provide not only an elevated driver experience but also a greater demand for storage within vehicles.

Patriot Expands its Viper 4 Series with AMD 3rd Gen Ryzen-Optimized Models

PATRIOT and Viper Gaming, a global leader in performance memory, SSDs, gaming peripherals, and flash storage solutions, announced the release of a new addition to their Viper 4 series line today. The Viper 4 DDR4 Blackout series is designed to be a PC-Build-friendly with a potential for overclocking and more extensive compatibility across various Intel and AMD platforms. The whole new matte-black heat spreader design covers a high-quality black PCB and offers a stylishly understated memory kit designed for PC enthusiasts, modders, and system builders. The Viper 4 Blackout series is available in frequencies of 3000 MHz up to 4000 MHz and is fully compatible with the latest 3rd Gen AMD Ryzen Desktop Processors and AMD X570 motherboards.

The all-black color theme matches any high-end system component from motherboards and graphics cards down to gaming cases and system coolers. The Viper Gaming team was inspired to create this highly tweakable memory kit in a sleek and stylish matte black aluminum heat spreader, and 100% compatible with current JEDEC memory standards.

ADATA Shows Off a JEDEC-compliant 32GB Dual-rank DIMM That Isn't "Double Capacity"

Last year, with the introduction of the Intel Z390 chipset, there was a spate of so-called "double capacity DIMMs" or DC DIMMs, tall memory modules with two rows of DRAM chips, which added up to 32 GB per DIMM. You needed a Z390 platform and a 9th generation Core processor that supported up to 128 GB of memory, to use these things. With the introduction of 16 Gb DDR4 DRAM chips by both Micron and Samsung, JEDEC-compliant 32 GB unbuffered DIMMs of standard height are finally possible, and ADATA put together the first of these, shown off at Computex 2019.

The AD4U2666732GX16 is a 32-gigabyte dual-rank unbuffered DIMM made using 16 Gb chips supplied by Micron Technology. The modules tick at JEDEC-standard DDR4-2666 speeds, at a module voltage of 1.2 Volts. ADATA didn't disclose timings. The 16 Gb DRAM chips are made by Micron in an advanced (3rd generation) 10 nm-class silicon fabrication process to achieve the desired transistor-density. 32 GB DIMMs are expected to hit critical-mass in 2H-2019/2020, with the advent of AMD's 3rd generation Ryzen "Matisse," and Intel's "Ice Lake-S" desktop processors. Memory manufacturers are also expected to put out speedy and highly-compatible single-rank 16-gigabyte DIMMs using 16 Gb chips, which could finally make 32 GB dual-channel the mainstream memory configuration, moving up from half a decade of 2x 8 GB.

AMD Zen 2 CPUs to Support Official JEDEC 3200 MHz Memory Speeds

An AMD-based system's most important performance pairing lies in the CPU and system RAM, as a million articles written ever since the introduction of AMD's first generation Ryzen CPUs have shown (remember the races for Samsung B-die based memory?). There are even tools that allow you to eke out the most performance out of your AMD system via fine memory overclocking and timings adjustment, which just goes to show the importance the enthusiast community derives from such tiny details that maximize your AMD Zen-based CPU performance. Now, notorious leaker @momomo_us has seemingly confirmed that AMD has worked wonders on its memory controller, achieving a base JEDEC 3200 MHz specification - up from the previously officially supported DDR4-2666 speeds in the first-gen Ryzen (updated to DDR4-2933 speeds on the 12 nm update).

Ballistix DRAM Crushes World DDR4 Overclocking Record at 5726MT/s

Ballistix, Micron's gaming memory brand, is now the official overclocking world record holder. Overclockers used the Ballistix Elite 3600MT/s to set a new overclocking record for the fastest DDR4 memory frequency at a blistering 5726 MT/s. That's 79 percent faster than the max JEDEC DDR4 speed of 3200 MT/s and 115 percent faster than the 2666 MT/s considered mainstream today.

How's that for a speed run? Yes, this record is a big, big, (big, big) deal to us here at Ballistix. But we care just as much about how we earned the top mark. We're proud that we were able to use the same CAS latency - CL24 - used by most of the previous record holders. In addition, we set the record using the same production module of the Ballistix Elite 3600 available to gamers today.

Western Digital Announces Automotive-grade iNAND EM132 eMMC Storage

Western Digital Corp. is addressing the automotive industry's increasing need for storage by equipping vehicle manufacturers and system solution providers with the technology and capacity to support both current and future applications including e-cockpits, Artificial Intelligence (AI) databases, ADAS, advanced infotainment systems, and autonomous computers. As the first 256GB e.MMC using 64-Layer 3D NAND TLC flash technology in the automotive market, the new Western Digital iNAND AT EM132 EFD extends the life of e.MMC beyond 2D NAND to meet evolving application needs and growing capacity requirements.

According to Neil Shah, partner and research director, Counterpoint Research, "Storage is one of the fastest growing semiconductor applications in a connected autonomous car. The advanced in-vehicle infotainment (IVI), AI and sensor-driven autonomous driving systems generate large amounts of data that needs to be processed and stored locally at the edge. The average capacity of storage required per vehicle is expected to balloon beyond 2TB by 2022."

Toshiba Adds BiCS FLASH Enabled UFS to Lineup of Embedded Automotive Memory Products

Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has begun sampling new Automotive JEDEC UFS Version 2.1 embedded memory solutions utilizing 3D flash memory. The new products are embedded flash memory devices that integrate the company's BiCS FLASH 3D flash memory and a controller in a single package. The sequential read and write performance are improved by approximately 6 percent and 33 percent, respectively, over existing devices.

The company's Automotive UFS supports a wide temperature range (-40°C to +105°C), meets AEC-Q100 Grade 2 requirements and offers the enhanced reliability required by various automotive applications. The lineup consists of four capacities: 32GB, 64GB, 128GB, and 256GB.

Toshiba Unveils BiCS Flash Based e-MMC Ver. 5.1 Devices

Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, today announced that it will begin sampling new JEDEC e-MMC Ver. 5.1 compliant embedded flash memory products for consumer applications next month. The new products integrate the company's BiCS FLASH 3D flash memory and a controller in a single package. The company will continue to reinforce its market-leading position by delivering a broad, high-performance product lineup, including for applications that continue to need e-MMC as an embedded memory solution.

JEDEC Updates Standard for Low Power Memory Devices: LPDDR5

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-5, Low Power Double Data Rate 5 (LPDDR5). LPDDR5 will eventually operate at an I/O rate of 6400 MT/s, 50% higher than that of the first version of LPDDR4, which will significantly boost memory speed and efficiency for a variety of applications including mobile computing devices such as smartphones, tablets, and ultra-thin notebooks. In addition, LPDDR5 offers new features designed for mission critical applications such as automotive. Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, LPDDR5 is available for download from the JEDEC website.

With the doubling of memory throughput over the previous version of the standard (LPDDR5 is being published with a data rate of 6400 MT/s, compared to 3200 MT/s for LPDDR4 at its publication in 2014), LPDDR5 promises to have an enormous impact on the performance and capabilities of the next generation of portable electronic devices. To achieve this performance improvement, LPDDR5 architecture was redesigned; moving to 16Banks programmable architecture and multi-clocking architecture.

Toshiba Unveils Industry's First UFS Ver. 3.0 Embedded Flash Memory Devices

Toshiba Memory Corporation, the world leader in memory solutions, has started sampling[1] the industry's first Universal Flash Storage (UFS) Ver. 3.0 embedded flash memory devices. The new line-up utilizes the company's cutting-edge, 96-layer BiCS FLASH 3D flash memory and is available in three capacities: 128GB, 256GB and 512GB. With high-speed read/write performance and low power consumption, the new devices are suitable for applications such as mobile devices, smartphones, tablets, and augmented/virtual reality systems.

The new devices integrate 96-layer BiCS FLASH 3D flash memory and a controller in a JEDEC-standard 11.5 x 13.0 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management for simplified system development.

JEDEC Updates Groundbreaking High Bandwidth Memory (HBM) Standard

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of an update to JESD235 High Bandwidth Memory (HBM) DRAM standard. HBM DRAM is used in Graphics, High Performance Computing, Server, Networking and Client applications where peak bandwidth, bandwidth per watt, and capacity per area are valued metrics to a solution's success in the market. The standard was developed and updated with support from leading GPU and CPU developers to extend the system bandwidth growth curve beyond levels supported by traditional discrete packaged memory. JESD235B is available for download from the JEDEC website.

JEDEC standard JESD235B for HBM leverages Wide I/O and TSV technologies to support densities up to 24 GB per device at speeds up to 307 GB/s. This bandwidth is delivered across a 1024-bit wide device interface that is divided into 8 independent channels on each DRAM stack. The standard can support 2-high, 4-high, 8-high, and 12-high TSV stacks of DRAM at full bandwidth to allow systems flexibility on capacity requirements from 1 GB - 24 GB per stack.

JEDEC to Enable Standard 3D Models of Electronic Components

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced that its JC-11 Mechanical Standardization Committee will be releasing 3D models of new standard modules, packages, and socket outlines in addition to the detailed 2D drawings developed today. The 3D CAD models will be three-dimensional representations of the two-dimensional mechanical drawings offered by the committee and will be provided in a standard universal format so as to be importable by most common 3D CAD software packages used in the industry.

In addition, the JC-11 committee has developed and published a new standard XML schema under JEP30, which aligns to the recently published JESD30H document to enable software to generate 3D models automatically based on user or database inputs. "The demand for 3D models in electronics design and manufacturing is set to grow exponentially with the expansion of the Internet of Things and the drive towards Digital Manufacturing through automation. JEDEC is helping to enable this growth through the development of 3D models for our standard designs to complement the 2D drawings offered today and by establishing a universal schema for presenting real part data to software. These resources will greatly reduce time to market, eliminate opportunities for human error, and reduce manufacturing costs across the industry," said John Norton, JEDEC JC-11 Chairman.

SK Hynix Announces 1Ynm 16Gb DDR5 DRAM

SK Hynix announced that it has developed 16 Gb DDR5 DRAM, the industry's first DDR5 to meet the JEDEC standards. The same 1Ynm process technology used for the recently-developed 1Ynm 8Gb DDR4 DRAM was applied to the new DRAM, giving an industry-leading competitive edge for the Company.

DDR5 is a next-generation DRAM standard that offers ultra-high speed and high density with reduced power consumption as compared to DDR4, for use in data-intensive applications such as big data, artificial intelligence, and machine learning.

Crucial Expands Server Memory Portfolio with First 32GB NVDIMM Offering

Crucial , a leading global consumer brand of Micron Technology for memory and storage upgrades, today announced a new 32GB Nonvolatile DIMM (NVDIMM) to help companies preserve critical data in the event of a system power loss and limit costly downtime. The first Crucial NVDIMM to operate at 2933 MT/s, the new module provides companies powerful and persistent memory performance while reducing the amount of NVDIMMs needed in a server.

In fast-paced business environments, sales and customer satisfaction are decided in milliseconds. Crucial NVDIMMs give organisations the advantage when data transactions hang in the balance by fusing memory with on-module NAND, providing near-instant access with data persistence. In the event of a system power loss, the NVDIMM would back up DRAM data to the NAND with help from an ultracapacitator, its backup power source. Crucial NVDIMMs are compatible with the latest 2.5 inch drive bay and HHHL PCIe AgigA Tech PowerGEM ultracapacitors, enabling continual power to up to four NVDIMMs during power loss until a backup is completed.

Cadence, Micron Update on DDR5: Still On Track, 1.36x Performance Increase Over DDR4 at Same Data Rate

DDR5 will be the next step in DDR5 memory tech, again bringing increased transfer speeds over the previous JEDEC (the standards body responsible for the DDR specifications) specification. The new memory technology will also bring the customary reductions in operating voltage - the new version will push the 64-bit link down to 1.1V and burst lengths to 16 bits from 1.2V and 8 bits. In addition, DDR5 lets voltage regulators ride on the memory card rather than the motherboard. CPU vendors are also expected to expand the number of DDR channels on their processors from 12 to 16, which could drive main memory sizes to 128 GB from 64 GB today.

DDR5 is being developed with particular attention to the professional environment, where ever-increasingly gargantuan amounts of addressable memory are required. One of the guiding principles over DDR5's development is a density increase (to allow 16 Gbit chips) that would allow for larger volumes of memory (and thus data processing) in the environments that need that. Reduced power consumption also plays a role here, but all of this will have a cost: latency. For end-users, though, this increased latency will be offset by the usual suspects (DDR memory companies such as Crucial, Corsair, just to name some started with the letter C) in tighter timings and increased operating frequencies. JEDEC's specification for DDR5 is set at 4800 MT/s, but it's expected the memory tech will scale to 6400 MT/s, and you know overclocking and performance-focused companies will walk all over the standard.

Intel 9th Gen LGA1151 Processors Support Up to 128GB of Memory

Intel's 6-core "Coffee Lake" die was essentially a "Kaby Lake" die with two extra cores, and no physical changes to other components, such as iGPU or uncore. With its new 8-core "Coffee Lake" Refresh silicon, Intel has turned its attention to not just increasing the core-count, but also improving the processor's integrated memory controller, in addition to hardware fixes to certain security vulnerabilities. The 128-bit wide (dual-channel) integrated memory controller now supports up to 128 GB of memory. Intel's current DDR4-capable mainstream desktop processors only support up to 64 GB, as do rival AMD's Ryzen socket AM4 processors.

Support for up to 128 GB explains the emergence of off-spec memory standards such as ASUS' Double Capacity (DC) DIMMs. Samsung is ready with a JEDEC-compliant 32 GB dual-rank UDIMM memory module for client platforms. Introduction of 32 GB UDIMMs also comes amidst reports of DRAM pricing cool-off through 2019, which could make 32 GB dual-channel memory kits consisting of two 16 GB UDIMMs more affordable. The increase in maximum memory amount could also indicate Intel's seriousness to introduce 3D Xpoint-based Optane Persistent Memory modules as alternatives to DRAM-based main memory, with higher capacities compensating for worse latencies and data-rates compared to DRAM.

GIGABYTE Intros DDR4 Memory Modules with Chunkier Heatspreaders

GIGABYTE expanded its teething DDR4 memory lineup with a new 16 GB (2x 8 GB) dual-channel DDR4 memory kit, called simply "GIGABYTE Memory 2666MHz." These modules lack the Aorus branding featured on the company's very first DDR4 modules. You instead get 32 mm tall, 7 mm-thick modules with a restrained design, and plain GIGABYTE branding.

One area where the company refined its design is the heatspreaders, which are thicker, and have more mass to them, even if they lack finnage. GIGABYTE's module does what it says on the tin - DDR4-2666 with 16-16-16-35 timings, at 1.2 Volts. Out of the box, it packs both JEDEC and XMP SPD profiles. Memory controllers that support DDR4-2666 (such as Intel "Coffee Lake" and later), should run it at the advertised speeds without any user intervention. For older platforms, an XMP 2.0 profile helps achieve the advertised settings. The modules are backed by lifetime warranty.

ATP Announces eMMC 5.1 Chips

Fueled by continuous big data generation, the ongoing industrial revolution requires storage solutions that offer not only high performance, but also uncompromising reliability and maximum endurance. ATP Electronics, a leading manufacturer of industrial memory and storage solutions, tackles these tough storage demands with its new industrial e.MMC product family.

The ATP industrial e.MMC, which adheres to JEDEC e.MMC v5.1 Standard (JESD84-B51), is poised to make its mark at the Flash Memory Summit 2018 in Santa Clara, USA from August 7 to 9, 2018.
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