Crucial, a brand of Micron Technology, Inc., is deepening its commitment to gamers with the debut of Crucial DDR5 Pro Overclocking (OC) 6400 CL32 Gaming DRAM. Engineered for tech enthusiasts and offered in 32 GB kits or 16 GB single modules, this new memory delivers faster speeds, lower latency and a bold new design that looks as good as it performs. This launch cements Crucial's commitment to PC gamers with new 10-nanosecond/CL32-class latency and delivers on feedback related to aesthetics, now with a new elevated heat spreader design.

"Today's AAA games are more immersive, fast paced and demanding than ever. They push systems to their limits with real-time action, intense multitasking and ultra-high frame rates," said Dinesh Bahal, corporate vice president and general manager of Micron's Commercial Products Group. "Gamers need memory that can keep up. Crucial DDR5 Pro OC 6400 CL32 is designed for those who want to win on both performance and style. It helps players load games faster, react instantly and stay ahead of the competition. It's fast, reliable and looks incredible inside your rig."

[Editor's note: Our in-depth Crucial Pro OC DDR5-6400 32 GB CL32 Review is now live]

According to TrendForce, citing a Nikkei report, Microsoft is accelerating efforts to relocate laptop and server production out of China. The company has asked suppliers to prepare for the manufacture of Surface laptops and data center servers outside the country, with the goal of moving up to 80% of server components and final assembly elsewhere by 2026. The transition extends beyond final assembly to components and materials, including cables, connectors, and printed circuit boards marking the first time major U.S. firms have diversified supply chains down to this level.

Meanwhile, Micron reportedly plans to exit China's server chip business after failing to recover from a 2023 government ban that restricted its products from critical infrastructure. The U.S. memory maker was the first American semiconductor company targeted by Beijing in what was widely viewed as retaliation for Washington's tech export controls. The move has cost Micron access to China's fast-growing data center market in favor of rivals Samsung Electronics, SK hynix, and domestic players YMTC and CXMT. However, Micron will continue supplying customers such as Lenovo and other firms with operations outside China, as well as maintain business in the automotive and mobile sectors. Despite workforce reductions in its Chinese NAND division earlier this year, Micron continues to operate and expand its Xi'an packaging facility, one of its key manufacturing sites in Asia, Reuters reports.

Micron Technology is pushing the boundaries of laptop performance with higher speeds for Crucial LPCAMM2 memory, now reaching up to 8,533 megatransfers per second (MT/s). This latest enhancement brings even more performance to Crucial's standards-based compact memory module, purpose-built to allow easy upgrades, efficient energy use and AI-ready computing.

With the new speed and densities up to 64 GB, Crucial LPCAMM2 allows users to run complex simulations, real-time AI tasks and data-intensive workloads with ease. This launch marks a major step forward in mobile memory innovation, offering 1.5 times faster performance and lower power consumption than traditional DDR5 SODIMMs. The modules deliver all the benefits of Micron's leading LPDDR5X mobile memory in a form factor that is less than half the size of standard SODIMMs, enabling users to upgrade, repair and extend the life of their devices, reducing e-waste.

TrendForce's latest investigations have revealed that with consumer demand was concentrated in the first half of the year, leading to the traditional second-half peak season underperforming. The market had expected NAND Flash prices to stabilize in 4Q25. However, HDD shortages and longer lead times have prompted CSPs to quickly redirect storage demand toward QLC enterprise SSDs. This urgent surge in orders has resulted in significant market volatility.

Sandisk was the first to announce a 10% price increase, while Micron paused quotations due to pricing and capacity issues. These events shifted supply-side sentiment from cautious to aggressive. Consequently, NAND Flash contract prices across all categories are expected to generally rise, with an average increase of 5-10% in 4Q25.

Yesterday, Micron reported its fourth-quarter and full-year fiscal 2025 results, beating the consensus and providing interesting comments on its upcoming HBM technology. During the earnings call, Sanjay Mehrotra, CEO of Micron, confirmed that HBM4—the company's next-generation memory—will be available next year with several enhancements over the base HBM4 JEDEC specification. "Micron Technology's HBM4 12-high remains on track to support customer platform ramps, even as the performance requirements for HBM4 bandwidth and pin speeds have increased. We have recently shipped customer samples of our HBM4 with industry-leading bandwidth exceeding 2.8 TB/s and pin speeds over 11 Gbps." The JEDEC specification for HBM4 is 2 TB/s bandwidth and 8 Gb/s pin transfer across a 2048-bit interface. Micron is pushing this to 11 Gb/s, resulting in 40% higher bandwidth at 2.8 TB/s.

There is a simple reason why this is the case. Customers like NVIDIA are asking HBM makers to create a more performant HBM memory to keep up with the exponential growth that their compute dies are experiencing. To satisfy these requirements, Micron is moving beyond JEDEC specifications. "We believe Micron Technology's HBM4 outperforms all competing HBM4 products, delivering industry-leading performance as well as best-in-class power efficiency. Our proven 1-gamma DRAM, innovative and power-efficient HBM4 design, in-house advanced CMOS base die, and advanced packaging innovations are key differentiators enabling this best-in-class product," said Sanjay.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its fourth quarter and full year of fiscal 2025, which ended August 28, 2025.

"Micron closed out a record-breaking fiscal year with exceptional Q4 performance, underscoring our leadership in technology, products, and operational execution," said Sanjay Mehrotra, Chairman, President and CEO of Micron Technology. "In fiscal 2025, we achieved all-time highs across our data center business and are entering fiscal 2026 with strong momentum and our most competitive portfolio to date. As the only U.S.-based memory manufacturer, Micron is uniquely positioned to capitalize on the AI opportunity ahead."

SK Hynix is installing a new pilot production line at its M15X facility in Cheongju, bringing online a new 1b DRAM manufacturing line designed to address surging HBM demand, The Bell reports. Equipment installation is scheduled to be completed by November with the pilot line targeting an initial monthly output of 10,000 wafers. The move highlights different approaches among memory leaders, while Samsung pursues 1c DRAM technology for HBM4 applications, both SK Hynix and Micron have committed to 1b DRAM architecture, according to Aju News. This difference reflects varying technical roadmaps as companies race to capture as much as they can from the expanding AI memory markets.

On the other hand it seems that memory price adjustments have become a widespread practice. TrendForce reports citing SeDaily and Business Korea notes that SK Hynix has entered price negotiations with customers, however, no formal announcement has been made yet. The company is tweaking its prices in line with current market trends. This hints at a unified industry shift towards pricier memory across all big-name suppliers. Micron kicked things off in September first letting its channel partners know about 20-30% price hikes for DRAM. Samsung followed by informing major customers that Q4 contract prices for DRAM products, including LPDDR4X and LPDDR5/5X variants, would rise 15-30%. NAND pricing isn't immune either—eMMC and UFS contract prices are expected to climb 5-10%. On the same note, TrendForce indicates suppliers are ramping QLC SSD production, with capacity utilization projected to continue its growth through 2026. Inference AI workloads are expected to sustain demand into 2027, potentially creating enterprise SSD supply constraints by 2026.

Industry insiders cited by TrendForce say wait times for HDDs now stretch to almost a year. This has pushed Western Digital to join other companies in raising storage prices across its whole HDD range. Western Digital becomes the third major storage maker to change its prices. SanDisk upped its NAND prices by 10%, while Micron froze its prices for a week. The company points to sky-high demand for all its HDD sizes as the reason for these gradual price hikes. It also cites ongoing work on cutting-edge technology. Western Digital plans to ship more products by sea, which will add 6-10 weeks to current shipping times. The company asks customers to keep these longer delivery times in mind when they place orders.

With cloud giants like Google and Oracle increasing efforts to enhance their infrastructure, the impact on the demand for high-capacity storage is adding tension to the storage market, causing a significant mismatch between supply and demand. To tackle the long wait times for HDDs, memory makers are working hard to come up with Nearline SSD options. They aim to shrink the price difference between SSDs and HDDs from 4 to 5 times to about 3 times making SSDs more tempting for customers who don't want to wait for HDDs. The storage industry is adjusting its prices because of the huge demand for infrastructure as AI services grow fast and suppliers are having a tough time ramping up production to keep up with the sky-high demand for all types of storage.

NVIDIA has reportedly discontinued its first-generation Small Outline Compression Attached Memory Modules, known as SOCAMM. According to ET News, NVIDIA is shifting focus to the second-generation SOCAMM2 standard, which is being revamped for higher memory speeds, resulting in significantly improved bandwidth and performance. The first-generation SOCAMM was developed independently by NVIDIA, outside of any official memory consortium like JEDEC. It featured a detachable module design, offering superior specifications compared to existing solutions, with 694 I/O ports (compared to LPCAMM's 644 and traditional DRAM's 260), direct LPDDR5X memory substrate integration, and a more compact form factor.

NVIDIA aims for SOCAMM2 to become a faster, more widely adopted standard, potentially with JEDEC's assistance to standardize the format. SOCAMM2 is expected to maintain the same 649 I/O ports exposed to the motherboard but will integrate faster LPDDR5X running at 9600 MT/s, compared to the first-generation SOCAMM's 8533 MT/s. The new SOCAMM2 might also use LPDDR6 and source it from multiple suppliers. NVIDIA currently ships SOCAMM in its "Blackwell Ultra" GB300 NVL72 system, providing 18 TB of LPDDR5X memory at 14.3 TB/s bandwidth. An upgrade to SOCAMM2 could increase that to 16 TB/s bandwidth as a simple drop-in replacement, stemming from 9600 MT/s LPDDR5X. Additionally, NVIDIA may be diversifying its supplier strategy. The first-gen SOCAMM was supplied by Micron, but now Samsung and SK Hynix might join, although no specific details or timeline are available.

TrendForce's latest investigations reveal that the ramp-up of NVIDIA's Blackwell platform shipments in 2Q25, combined with continued expansion of general server deployments by North American CSPs, significantly boosted demand for enterprise SSDs. Total revenue for the top five brands surpassed US$5.1 billion, representing 12.7% QoQ growth. However, shortages of DDR4 and extended lead times for controller IC substrates created board supply constraints, which in turn shaped market share dynamics and revenue performance among vendors.

TrendForce noted that future competition in the enterprise SSD sector will center around three key factors: rapid technology iterations driven by AI workloads, the rise of Chinese players challenging international suppliers, and the ongoing need for vendors to balance new and legacy production capacity. Supply-demand mismatches may become the norm, making precise capacity planning and supply chain management critical for profitability.

TrendForce's latest investigations demonstrate that global DRAM industry revenue reached US$31.63 billion in the second quarter of 2025, up 17.1% QoQ. This growth was fueled by rising contract prices for conventional DRAM, robust shipments growth, and expanding HBM volumes. Inventory digestion at DRAM suppliers accelerated with stronger procurement momentum from PC OEMs, smartphone makers, and CSPs, driving contract prices for most products back into positive territory.

SK hynix posted bit shipments above its targets in 2Q25. However, the higher share of lower-priced DDR4 shipments limited ASP growth. Even so, revenue surged 25.8% QoQ to $12.23 billion, boosting market share to 38.7% and securing the top spot once again.

TrendForce's latest investigations reveal that the NAND Flash industry posted solid growth in 2Q25 despite slight declines in ASP. Production cuts by suppliers helped ease the supply-demand imbalance, while supportive policies in both China and the U.S. fueled demand. Overall, bit shipments rose significantly, driving combined revenue among the top five suppliers up 22% QoQ to US$14.67 billion.

Looking ahead to 3Q25, demand is expected to stabilize as the effects of China's subsidies and U.S. tariff-driven stockpiling begin to fade. While ASPs may edge higher, weak consumer demand and front-loaded inventory stocking are likely to limit growth, with industry revenue projected to continue expanding but at a slower pace.

NVIDIA's and AMD's next-generation accelerators will definitely utilize a next-generation HBM4 memory, too. However, interesting news, confirmed by SemiAnalysis, is that these accelerators will utilize a customized HBM memory for the first time. In an HBM stack, consisting of stacked DRAM dies up to a 12-high, connected with TSVs, there is the possibility of embedding an optional base die with customized logic/accelerator circuitry tailored to a specific need. It appears that NVIDIA and AMD are not only exploring this option to gain more performance, but are also actively working on an implementation with a custom base that will push these accelerators ahead of any third-party ASIC solution by a third. Since everyone is trying to grab a bit of market share in the AI ASIC world, NVIDIA and AMD have to innovate their designs to stay ahead constantly.

"We expect NVIDIA and AMD to come out with their custom HBM implementations with HBM4, with other accelerator designers likely to only have a custom base die implementation by HBM4E in the 2027 timeframe," notes the SemiAnalysis post. This means that while ASIC designers, such as Broadcom and MediaTek, will have a working solution in 2027 chips, NVIDIA and AMD will have a working custom HBM4 in 2026 products. For NVIDIA, this is the "Rubin" architecture, supposed to outperform the current "Blackwell" implementation by a wide margin. For AMD, this is the Instinct MI400 series of accelerators, which is coming for the first time in a rack-scale flavor.

Micron Technology, Inc., develops innovative memory and storage solutions to address the data needs of the AI-driven data center with superior performance, capacity and energy efficiency. Today Micron extends its industry leadership in storage with the launch of three new data center SSDs all built with Micron G9 NAND. This expansion of Micron's storage portfolio includes the world's first PCIe Gen 6 NVMe SSD, industry-leading capacity for an E3.S SSD and the lowest latency mainstream Gen 5 SSD for AI data centers. These new products are highly performant, energy and space efficient, and validated with leading ecosystem partners to streamline qualification and ensure seamless integration, making them the ideal portfolio for the widely divergent needs of AI workloads.

"With the industry's first PCIe Gen 6 SSD, industry-leading capacities and the lowest latency mainstream SSD—all powered by our first-to-market G9 NAND—Micron is not just setting the pace; we are redefining the frontier of data center innovation," said Jeremy Werner, senior vice president and general manager of Micron's Core Data Center Business Unit. "This launch cements our leadership in data center SSDs and signals a new era of performance, density and efficiency for our customers."

NVIDIA has revealed last week its plan to roll out 600,000 to 800,000 SOCAMM memory modules in 2025. This move puts SOCAMM technology in a position to replace current high-bandwidth memory (HBM) options. NVIDIA aims to use these modules in its upcoming AI products such as the GB300 "Blackwell" platform and AI PC Digits system, which it showed off at GTC 2025. Industry reports indicate that NVIDIA has communicated projected order quantities to memory and substrate suppliers. NVIDIA engaged three major memory manufacturers: Samsung Electronics, SK Hynix, and Micron Technology for SOCAMM co-development. As Digitimes Asia reports citing ET News and Wccftech, Micron has secured approval for volume production ahead of its competitors.

The System on Chip Advanced Memory Module (SOCAMM) technology uses LPDDR DRAM to boost performance for low-power high-bandwidth AI computing tasks. Micron says SOCAMM gives 2.5 times more bandwidth while reducing size and power use by a third compared to standard server RDIMM modules. The planned SOCAMM rollout though smaller than NVIDIA's expected 9 million HBM unit buy for 2025, marks a key market shift. Industry experts see this as a possible game-changer for memory and substrate fields. SOCAMM's rollout covers business and consumer markets first aiming at AI servers and workstations before moving to personal computers. The technology links cost-effective growth with high-performance AI workload needs.

The semiconductor industry has officially accelerated its next-generation memory development, with DDR6 standard now coming soon. Although enthusiasts won't find these modules available until 2027, key players, Samsung, Micron, and SK Hynix, have already moved past prototype stages and embarked on rigorous validation cycles. In partnership with Intel, AMD, and NVIDIA, they're targeting an initial throughput of 8,800 MT/s, with plans to scale up to a staggering 17,600 MT/s, almost doubling the ceiling of today's DDR5. This increase is driven by DDR6's 4×24-bit sub-channel architecture, which requires entirely new approaches to signal integrity. Additionally, it also differs from DDR5's current 2x32-bit sub-channel structure. To overcome the physical limits that DIMM form factors faced at higher speeds, the industry is betting on CAMM2. Early indication is that server platforms will lead the change, with high-end notebooks following suit once manufacturing ramps up.

Behind the scenes, timelines are being mapped: platform validation is slated for 2026, server deployments in 2027, and broader consumer availability thereafter. This phased rollout mirrors the DDR5 journey; however, analysts predict that DDR6's architectural leap could accelerate adoption in AI and high-performance computing environments. Of course, cutting-edge technology comes with a premium: initial DDR6 modules are expected to carry price tags reminiscent of DDR5's 2021 debut, potentially limiting early adoption to hyperscale data centers and AI research labs. Yet with HPC and AI appetite for bandwidth, memory makers are targeting launch as soon as possible to satisfy the massive deployment of compute. By 2027, CAMM2-based modules running at DDR6 speeds may well define the new standard for high-performance systems.

Micron Technology, Inc., the only-U.S. based memory manufacturer, announced today that it is launching the industry's highest-density, radiation-tolerant single-layer cell (SLC) NAND product. With a die capacity of 256 gigabits (Gb), this product is the first in a portfolio that will include space-qualified NAND, NOR and DRAM solutions. The product is available now and represents the first in its class to be offered by any major memory manufacturer.

The space economy is skyrocketing, fueled by rapid growth in commercial and government missions. As computing and AI evolve, demand is rising for high-performance technology capable of processing data directly in orbit. AI-enabled edge computing is transforming space operations: allowing spacecraft to analyze sensor data, detect anomalies and make decisions autonomously, reducing reliance on Earth-based systems and preserving bandwidth.

SSDs are vital to enhancing user experience and system performance for PCs and client devices. Micron Technology, Inc. today announced the Micron 2600 NVMe SSD, a value client storage solution designed for OEMs. Built with the industry's first 9th-generation QLC NAND in an SSD, the 2600 SSD features Micron's innovative Adaptive Write Technology (AWT) to deliver exceptional PCIe Gen 4 performance with QLC economics. The Micron 2600 SSD achieves up to 63% faster sequential write and 49% faster random write speeds than competing value QLC and TLC SSDs, offering a best-in-class user experience for demanding client users.

"The Micron 2600 QLC SSD achieves superior performance compared to competitive value TLC drives," said Mark Montierth, corporate vice president and general manager of the Mobile and Client Business Unit at Micron Technology. "Micron's unparalleled combination of high-performance G9 NAND and innovative Adaptive Write Technology unlocks the performance previously only considered possible with TLC drives and is in qualification with Micron's OEM customers. This Micron innovation milestone allows for broader commercial adoption of QLC NAND."

Usually for newer technology rollout, prices are significantly higher compared to the last-gen. However, with DRAM, the story is the opposite. For the first time since the launch of DDR5, buyers are paying more for DDR4 memory modules than for the newer standard. A combination of tariff uncertainty and rapidly depleting DDR4 inventories is the main driver behind this. TrendForce data show that some high-demand DDR4 kits rose by as much as 40% in just one week, while DRAMeXchange reports that the average spot price for a 16 Gb (1Gx16) DDR4 module at 3,200 MT/s from Samsung and SK Hynix climbed to $12.50, with peak offers hitting $24. By contrast, dual-8 Gb DDR5 kits running between 4,800 MT/s and 5,600 MT/s remain near $6 on average, rarely exceeding $9. This unexpected surge follows Micron's announcement that it will wind down DDR4 production by year's end, accelerating the depletion of existing stocks over the next six to nine months.

Samsung also announced plans earlier this spring to retire its DDR4 lines and shift its focus to DDR5 and high-bandwidth memory, while China's CXMT confirmed it will scale back its DDR4 output despite recently reaching peak production levels. Taiwan's Nanya Technology is among the biggest beneficiaries of this topsy-turvy market. In the first quarter, the company held a DDR4 inventory valued at approximately NT$37.6 billion ($1.2 billion). Nanya even paused public price quoting to manage sales at these elevated levels. Many in the tech industry worry that renewed US-China trade tensions could spark another wave of panic buying. If additional tariffs target China's remaining DDR4 supply, module costs could climb to more than three times the price of DDR5, extending this rare pricing inversion well into the next quarter.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its third quarter of fiscal 2025, which ended May 29, 2025. "Micron delivered record revenue in fiscal Q3, driven by all-time-high DRAM revenue including nearly 50% sequential growth in HBM revenue. Data center revenue more than doubled year-over-year and reached a quarterly record, and consumer-oriented end markets had strong sequential growth," said Sanjay Mehrotra, Chairman, President and CEO of Micron Technology. "We are on track to deliver record revenue with solid profitability and free cash flow in fiscal 2025, while we make disciplined investments to build on our technology leadership and manufacturing excellence to satisfy growing AI-driven memory demand."

Primemas Inc., a fabless semiconductor company specializing in chiplet-based SoC solutions through its Hublet architecture, today announced the availability of customer samples of the world's first Compute Express Link (CXL) memory 3.0 controller. Primemas has been delivering engineering samples and development boards to select strategic customers and partners, who have played a key role in validating the performance and capabilities of Hublet compared to alternative CXL controllers. Building on this successful early engagement, Primemas is now pleased to announce that Hublet product samples are ready for shipment to memory vendors, customers, and ecosystem partners.

While conventional CXL memory expansion controllers are limited by fixed form factors and capped DRAM capacities, Primemas leverages cutting-edge chiplet technology to deliver unmatched scalability and modularity. At the core of this innovation is the Hublet—a versatile building block that enables a wide variety of configurations.

TrendForce's latest investigations reveal that several negative factors weighed on the enterprise SSD market in the first quarter of 2025. These include production challenges for next-gen AI systems and persistent inventory overhang in North America. As a result, major clients significantly scaled back orders, causing the ASP of enterprise SSDs to plunge nearly 20%. This led to QoQ revenue declines for the top five enterprise SSD vendors, reflecting a period of market adjustment.

However, conditions are expected to improve in the second quarter. As shipments of NVIDIA's new chips ramp up, demand for AI infrastructure in North America is rising. Meanwhile, Chinese CSPs are steadily expanding storage capacity in their data centers. Together, these trends are set to reinvigorate the enterprise SSD market, with overall revenue projected to return to positive growth.

Micron has informed its customers that its DDR4 memory products will reach the end of life in the coming quarters, with shipments expected to taper off over the next six to nine months. This announcement aligns Micron with the earlier plans of Samsung and SK Hynix to discontinue DDR4 production and focus on next-generation memory solutions, such as DDR5, LPDDR5, and high-bandwidth memory. In a recent interview, Micron's Executive Vice President and Chief Business Officer, Sumit Sadana, acknowledged that the phase-out comes at a time when demand for DDR4 remains unexpectedly strong. He noted that shortages of both DDR4 and LPDDR4 modules have driven spot-market prices to levels that, in some cases, exceed those of newer DDR5 products.

To address this imbalance, Micron will prioritize supply for long-term partners in the automotive, industrial, and networking sectors, where product reliability and contract stability are critical. The retirement of DDR4 has been partly driven by competitive pressure from Chinese memory manufacturers, which have flooded the market with lower-cost modules. Yet, these newcomers may face challenges in matching the quality, long-term support, and volume capabilities that established players provide. Micron is urging its customer base to transition to DDR5 and LPDDR5 products, which have reached competitive price points and offer superior bandwidth and energy efficiency.

Micron Technology, Inc. today announced the integration of its HBM3E 36 GB 12-high offering into the upcoming AMD Instinct MI350 Series solutions. This collaboration highlights the critical role of power efficiency and performance in training large AI models, delivering high-throughput inference and handling complex HPC workloads such as data processing and computational modeling. Furthermore, it represents another significant milestone in HBM industry leadership for Micron, showcasing its robust execution and the value of its strong customer relationships.

Micron HBM3E 36 GB 12-high solution brings industry-leading memory technology to AMD Instinct MI350 Series GPU platforms, providing outstanding bandwidth and lower power consumption. The AMD Instinct MI350 Series GPU platforms, built on AMD advanced CDNA 4 architecture, integrate 288 GB of high-bandwidth HBM3E memory capacity, delivering up to 8 TB/s bandwidth for exceptional throughput. This immense memory capacity allows Instinct MI350 series GPUs to efficiently support AI models with up to 520 billion parameters—on a single GPU. In a full platform configuration, Instinct MI350 Series GPUs offers up to 2.3 TB of HBM3E memory and achieves peak theoretical performance of up to 161 PFLOPS at FP4 precision, with leadership energy efficiency and scalability for high-density AI workloads. This tightly integrated architecture, combined with Micron's power-efficient HBM3E, enables exceptional throughput for large language model training, inference and scientific simulation tasks—empowering data centers to scale seamlessly while maximizing compute performance per watt. This joint effort between Micron and AMD has enabled faster time to market for AI solutions.

Micron Technology, Inc. (Nasdaq: MU) and the Trump Administration today announced Micron's plans to expand its U.S. investments to approximately $150 billion in domestic memory manufacturing and $50 billion in R&D, creating an estimated 90,000 direct and indirect jobs. As part of today's announcement, Micron plans to invest an additional $30 billion beyond prior plans which includes building a second leading-edge memory fab in Boise, Idaho; expanding and modernizing its existing manufacturing facility in Manassas, Virginia; and bringing advanced packaging capabilities to the U.S. to enable long-term growth in High Bandwidth Memory (HBM), which is essential to the AI market. Additionally, Micron is announcing a planned $50 billion domestic R&D investment, reaffirming its long-term position as the global memory technology leader. As previously announced, Micron's investment includes its ongoing plans for a megafab in New York.

Micron's approximately $200 billion broader U.S. expansion vision includes two leading-edge high-volume fabs in Idaho, up to four leading-edge high-volume fabs in New York, the expansion and modernization of its existing manufacturing fab in Virginia, advanced HBM packaging capabilities and R&D to drive American innovation and technology leadership. These investments are designed to allow Micron to meet expected market demand, maintain share and support Micron's goal of producing 40% of its DRAM in the U.S. The co-location of these two Idaho fabs with Micron's Idaho R&D operations will drive economies of scale and faster time to market for leading-edge products, including HBM.