Micron Technology, Inc. broke ground today on an advanced wafer fabrication facility located within the company's existing NAND manufacturing complex in Singapore. This new facility represents a planned investment of approximately US $24 billion (SG $31 billion) over 10 years and is designed to ultimately provide 700,000 square feet of cleanroom space. Wafer output is scheduled to begin in the second half of calendar 2028, helping Micron address growing market demand for NAND technology driven by the rapid expansion of AI and data-centric applications.

The groundbreaking ceremony for this facility, Singapore's first double-story wafer manufacturing fab, was marked by the attendance of Gan Kim Yong, deputy prime minister and minister for Trade and Industry of Singapore, Dr Beh Swan Gin, permanent secretary of the Ministry of Trade and Industry, Jermaine Loy, managing director of the Singapore Economic Development Board (EDB) and Jacqueline Poh, CEO of JTC Corporation.

Taiwanese media outlet Benchlife has reportedly obtained information about the pricing of AMD and NVIDIA GPU and memory bundles shipped to their respective add-in-board partners. According to their findings, both AMD and NVIDIA have increased the prices of GDDR6 and GDDR7 memory to reflect the current industry-wide DRAM shortage. However, the report highlights that NVIDIA's pricing for GDDR6 and GDDR7 memory is significantly lower than AMD's. As AMD and NVIDIA bundle their GPU dies with GDDR6/GDDR7 memory, they can set the pricing of these bundles based on several factors. These factors include the cost at which they acquire the DRAM and the desired profit margin for the GPU dies. Typically, the memory is paired with the GPU die, which also influences the final pricing strategy.

BenchlifeOn January 16th, NVIDIA officially notified its AIC partners that all bundled GDDR6 and GDDR7 memory packages are now increasing in price. We have been informed of the price increase through familiar AIC partners, but we won't specify the exact price here. What we can say is that NVIDIA's new prices are still lower than those announced by AMD to its AIB partners.

Micron has signed a letter of intent with Taiwanese Powerchip Semiconductor Manufacturing Corporation (PSMC) to buy its P5 fab in Tongluo in Central Taiwan. Micron and PSMC have agreed on a cash price of US$1.8 billion for the fab, which is PSMC's most recent 12-inch fab and should allow Micron to add additional 1x nm DRAM production capacity. The two companies are expecting the transaction to close by the second quarter of this year, but it doesn't mean that Micron will take over the facility from day one. Instead, Micron isn't expecting the fab to "contribute to meaningful DRAM wafer output" until the second half of 2027.

PSMC doesn't have its own 1x nm DRAM production today, as the company is still developing its own nodes, which could be part of the reason for the delayed "meaningful" output for Micron. That means that with the current equipment in place, Micron will end up with 2x nm DRAM to start with, suggesting it's DDR4 that's being produced at the fab today. According to TrendForce, the fab should be able to contribute as much as 10 percent of Micron's total DRAM output in 2027, which is not an insignificant amount. TrendForce also noted that PSMC is expecting to get a 1x nm (1Y or 1Z) DRAM license for its other fabs, to help it produce higher-density DRAM in the near future at its other fabs.

Micron Technology, Inc. (Nasdaq: MU) today announced that on Jan. 16, 2026, it will officially break ground on its megafab in Onondaga County, New York. Following rigorous environmental review and necessary permit approvals, Micron is now positioned to begin ground preparation and construction at the site.

Marking the largest private investment in New York state history, the project will be home to the most advanced memory manufacturing in the world and will help meet the growing demands of the AI systems that are central to the modern economy. With up to four fabs, this will be the largest semiconductor facility in the United States.

TrendForce's recent research indicates that as major international NAND Flash producers reduce or halt MLC NAND Flash output and redirect their capital and R&D investments toward advanced process tech, the worldwide MLC NAND Flash capacity is expected to decrease by 41.7% YOY in 2026, leading to increased supply-demand discrepancies.

The significant decline in MLC NAND Flash supply is mainly due to Samsung—formerly the largest supplier—announcing in March 2025 that its MLC NAND products would reach end of life, with final shipments in June 2026. Additionally, Kioxia, SK hynix, and Micron have limited their MLC production primarily to meet existing customer demand, with little motivation to increase capacity. As supply rapidly contracted and no large, quickly ramping replacement capacity appeared, the MLC NAND Flash market experienced strong pull-in demand and early volume commitments from late 1Q25, causing prices to rise sharply and maintain this upward trend.

Micron Technology today announced the Micron 3610 NVMe SSD, the industry's first PCIe Gen 5 G9 QLC SSD for client computing - a breakthrough that redefines what's possible in performance, efficiency and capacity for mainstream PCs and ultra-thin laptops. Built on Micron's proven G9 NAND, the 3610 SSD achieves up to 11,000 MB/s sequential read speeds and 9,300 MB/s sequential write speeds. It offers the world's only 4 TB capacity in a compact single-sided M.2 2230 form factor, ideal for ultra-thin laptops and AI-capable devices. This innovation combines industry-leading Gen 5 speed with QLC economics, delivering next-level responsiveness without compromising battery life.

"The 3610 SSD combines cutting-edge PCIe Gen 5 technology, Micron's most-advanced G9 QLC NAND and a sleek, single-sided design to deliver premium performance, capacity and power efficiency," said Mark Montierth, senior vice president and general manager of Micron's Mobile and Client Business Unit. "The 3610 will enable ultra-thin devices that meet the growing demands of on-device AI, immersive streaming and performance-intensive workloads."

SK Hynix has showcased its most advanced high-bandwidth memory, packaged as a 16-high 48 GB HBM4, designed for high-capacity AI and HPC accelerators that require lots of memory. This is the first time SK Hynix has shown a memory module more advanced than the 12-high 36 GB HBM4, which used to run at 11.7 Gbps. For the new 16-high HBM4, we don't have official data or any speed references, but we can assume SK Hynix managed to extract a bit more bandwidth from the four additional DRAM layers. Interestingly, the announcement was somewhat vague, possibly because Micron and Samsung are also enhancing their HBM4 modules before they become available to companies like AMD and NVIDIA, allowing for potential increases in speed if needed.

The company also demonstrated the custom base die HBM called cHBM. This includes a customized base die sitting at the bottom of the DRAM stack that includes some logic usually associated with the GPU/ASIC logic die, and not memory. For example, this could include HBM PHY and memory controllers that are usually embedded on the GPU die and occupy space, which could be used for more compute logic on the die and maximize performance. In SK Hynix's demonstration and illustration, this is manifested as die-to-die PHYs, embedded memory controllers, HBM PHY, and much more. Customers can basically choose whatever they want and can even embed processing logic inside the die area.

Despite achieving a record $13.64 billion in revenue for the first quarter of fiscal 2026, which ended on November 27, 2025, Micron addressed the ongoing DRAM shortage in its recent earnings call, noting that it is not a short-term issue. The company stated, "Sustained and strong industry demand, along with supply constraints, are contributing to tight market conditions, and we expect these conditions to persist beyond calendar 2026." Consequently, major customers are securing supply through multi-year contracts, driving up spot prices in both consumer and enterprise memory segments.

A significant factor in this imbalance is the increased demand for HBM memory. Micron mentioned that it "has completed agreements on price and volume for our entire calendar 2026 HBM supply," indicating that HBM customers are securing capacity well in advance. HBM requires more wafer area than standard DDR5 products as its stacks up to 12 DRAM dies, so its usage shifts scarce resources towards data center and AI workloads, reducing availability for traditional PC volumes. This results in a reallocation of limited dies and wafers to buyers willing to pay premiums and commit to long-term agreements, which are still a thing despite limited supply.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its first quarter of fiscal 2026, which ended November 27, 2025.

Fiscal Q1 2026 highlights

• Revenue of $13.64 billion versus $11.32 billion for the prior quarter and $8.71 billion for the same period last year
• GAAP net income of $5.24 billion, or $4.60 per diluted share
• Non-GAAP net income of $5.48 billion, or $4.78 per diluted share
• Operating cash flow of $8.41 billion versus $5.73 billion for the prior quarter and $3.24 billion for the same period last year

The gaming hardware industry has been in a bit of a state of late as a result of increased demand for DRAM causing a supply shortage and massive price hikes. As a result of the aforementioned issues, Samsung has been rumored to be converting some of its HBM3E and NAND production capacity to DRAM in order to meet demand. The ensuing rumors claimed that Samsung was planning an exit from the NAND, and thus SATA SSD market, as a result of the shift in focus. Micron's recent exit from the consumer space, and the closure of its Crucial memory and SSD brand, lent credence to these rumors, however, these rumors have recently been addressed by a Samsung spokesperson directly in a response to Wccftech. The spokesperson simply said "The rumor regarding the phasing out of Samsung SATA or other SSDs is false," apparently declining to expand any further. However, this is just one indication that the DRAM crisis may not be as long-lived as some have claimed.

Around the same time, in an interview with Hardware Unboxed, Edward Crisler, the PR manager for Sapphire, cautioned PC gamers and potential buyers against panic buying, saying that, "the good news is, I don't think the real pain, that we're suffering now and for the next six months or so, is going to last much longer than that," although he goes on to say that the actual issue at hand is uncertainty of the situation. The implication is that the market will eventually begin to stabilize within the next six to eight months. The implication isn't necessarily that DRAM prices will return to normal, but rather that DRAM supply will eventually catch up to supply. It could also be the case that the massive AI and datacenter boom currently causing the shortages will slow in the coming months, which would also help to stabilize things somewhat. Crisler is careful to note that DRAM prices may still remain somewhat elevated after the market stabilizes, but he seems to be convinced that the sky-high prices we're seeing for consumer memory will fall to some degree and that the gaming industry will adapt to whatever the end result is of the market shake-up.

Framework has published an official company blog post announcing that it is preparing a 50% price increase for its DDR5 memory upgrade configurations. In an effort to remain transparent with customers, the company has stated that it intends to raise the price of DDR5 memory available in Framework Laptop DIY Edition orders by 50%. This decision is a direct response to the significantly higher costs the company is facing from its DRAM suppliers and distributors. As a result, the company cannot absorb all of these cost increases on its own and needs to pass some of them on to the consumer.

The company will not increase the prices of its existing pre-configured systems that include DRAM, as these were acquired at earlier, standard prices. As the memory market becomes more volatile, this might be just the first wave of price hikes, since the company cannot absorb the added costs of new memory orders. Since Framework manufactures various components, from laptops to mini-PCs, the company uses a mix of DDR5, LPDDR5X, and GDDR. All of these are in tight supply due to the AI boom depleting any remaining DRAM inventory.

New research from Omdia shows that the semiconductor market delivered a record breaking performance in 3Q25 with industry revenue reaching $216.3bn, up 14.5% quarter-over-quarter (QoQ). This marks the first time the global semiconductor market has exceeded $200bn in a single quarter, following an already strong 2Q25, which saw 8% QoQ growth. At this pace, the industry is on track to exceed $800bn in total revenue for 2025.

3Q25 far exceeds seasonal expectations
Demand for AI and memory products remains strong, with both segments continuing to outpace the wider market. While AI has dominated recent industry narratives, Omdia notes that more segments contributed to growth in 3Q25 than in previous quarters.

Last week, Micron announced its intention to wind down its Crucial consumer business. After February 2026, the American computer memory giant's almost thirty-year-old sub-brand will cease to operate in the consumer channel across global retail outlets. Until then, Micron will be eager to clear the deck of anything considered below AI-grade standards. Production capacity is being freed up in order to meet ever-growing data center demands. Amusingly, tech-minded attendees of Comic Con India noticed the presence of an official Crucial cubicle at the Dehli-based event. One such observer, Madhav Banka, quickly documented their brief experience last Friday: "believe it or not, but Crucial India had set up a booth at Delhi Comic Con today! I forgot to click a picture, but it was hilarious."

Hours later, they uploaded a photo that confirmed an earlier claim. Micron and Crucial were not listed as official exhibitors—at least online—at the recently concluded convention, but representatives likely registered their appearance well in advance of early December's seismic revelation. Banka elaborated on the available wares, whilst injecting some humor: "I was not kidding...they're showcasing their RAMs and SSDs. The funny part? Their consumer business is closing down next year." The sub-brand's social media accounts issued a succinct farewell message mid-way through last week: "thank you for 29 amazing years of trust, collaboration, and shared success. Crucial wouldn't have been what it was without you." Micron's upcoming calendar includes some sort of presence at CES 2026; it will be interesting to find out whether its consumer line will turn up in Las Vegas, Nevada—a mere month before a planned exit from that market segment.

Industry sources cited by TrendForce say Dell is preparing to implement a 15-20% price hike as early as mid-December. The reason? Obviously, the recent DRAM prices, especially DDR5 that jumped around 70% year-over-year, with certain parts spiking more than 170%. Dell COO Jeff Clarke recently warned that he has "never seen memory-chip costs rise this fast," as component prices surge across the board. The other giant OEM, Lenovo, has begun notifying customers that pricing will rise in early 2026, with all current quotes expiring on January 1 due to accelerating memory shortages and AI-driven demand. Lenovo is advising customers to place orders sooner rather than later, as the next wave of adjustments is only weeks away. Other OEMs, including HP, Samsung, and LG are now rethinking 2026 product plans, particularly around AI PCs and tablets. HP CEO Enrique Lores has also indicated that H2 2026 may require further price adjustments, noting that memory accounts for roughly 15-18% of total PC cost.

TrendForce latest outlook reflects the growing pressure: rising memory prices are increasing Bill of Materials (BOM) costs and forcing brands to raise retail pricing, weakening demand. The firm has cut its 2026 notebook forecast from +1.7% YoY growth to a -2.4% decline. From the consumer point of view, 2026 seems to be a year to forget as pretty much each product category will see prices increased, low availability, and/or new products released with sub-par specifications just to keep the price reasonable. Let us not forget that just two days ago, Micron also shut down its nearly 30-year-old Crucial consumer brand, shifting those resources toward higher-margin AI products.

Micron announced today that it will exit its Crucial consumer business, bringing an end to retail sales of Crucial-branded SSDs and memory modules at major stores and online retailers. The company says it will continue shipping Crucial products through fiscal Q2 2026 (ending February 2026), after which the brand will no longer operate in the consumer channel. Warranty coverage and support will remain in place. Micron says the shift is driven by surging AI-related demand in the data center, which requires reallocating manufacturing capacity toward higher-margin enterprise and hyperscale customers. The company noted that its strategic focus is now on segments with stronger long-term growth in memory and storage rather than the competitive consumer market.

Crucial, best known for SSDs like the MX and P-series and its long-running line of desktop and laptop DRAM modules has been part of Micron's portfolio for nearly three decades. While consumer products are being phased out, Micron will continue selling Micron-branded enterprise SSDs and memory through its commercial channels. The company also stated it intends to limit workforce disruption by redeploying affected employees into open internal roles wherever possible. Micron's move comes as demand for AI hardware continues to surge. The company secured major HBM3E contracts with NVIDIA and AMD and expects to sample HBM4 next year.

TrendForce's recent research indicates that the ongoing expansion of AI infrastructure by CSPs fueled strong demand for enterprise SSDs in 3Q25. As a result, the combined revenue of the top five NAND Flash vendors grew by 16.5% QoQ, approaching US$17.1 billion. The production cuts enacted earlier in the year are now impacting the market, helping to balance supply and demand in the latter half. Additionally, the rising proportion of enterprise SSD shipments contributed to increased ASPs among suppliers.

A forecast for 4Q25 indicates that demand driven by AI for high-performance TLC and QLC enterprise SSDs will keep growing. However, as suppliers' inventories normalize and node migrations cause typical yield-related losses, the growth in shipments will be more restrained. Ongoing shortages in HDD supply will continue to push NAND Flash prices upward. TrendForce predicts total NAND Flash prices will rise by 20-25%, further boosting quarterly revenue.

At last week's Open Innovation Platform Ecosystem Forum in Amsterdam, TSMC provided more details over its custom HBM for the HBM4 generation, according to reports from HardwareLUXX. The company's custom C-HBM4E logic die is expected to shift to the N3P node, alongside a voltage drop from 0.8 V to 0.75 V. According to TSMC's presentation, the move targets roughly 2× better power efficiency versus today's DRAM processes. Even standard HBM4 base dies will see upgrades. Instead of using a conventional DRAM process as in HBM3E, TSMC plans to manufacture HBM4 base dies on its N12 logic node, reducing operating voltage from 1.1 V to 0.8 V. The company expects this alone to provide around a 1.5× efficiency gain. For C-HBM4E specifically, the base die doesn't just move to the N3P node, it also integrates the memory controllers directly into the stack. Those blocks normally sit on the host SoC, so the PHY becomes a fully custom design as well.

Moreover, TSMC is expanding its advanced packaging lineup with updated InFO and SoW options, but CoWoS remains the company's main growth driver. After moving from 1.5× to 3.3× reticle sizes with support for eight HBM chips, CoWoS now heads toward CoWoS-L, enabling up to 12 HBM3E/HBM4 stacks for 2026 AI parts, followed by a larger A16 generation version planned for 2027. TSMC is also securing major customers for its custom HBM logic dies. Micron has selected the foundry to build the logic base die for its HBM4E parts, with volume production planned for 2027. SK Hynix is also reportedly preparing its first custom HBM4E products for the second half of next year. According to Korea Financial Times, SK Hynix will use TSMC's 12 nm process for mainstream server-grade HBM base dies, while NVIDIA's top-end GPUs and Google's TPUs will step up to a 3 nm node.

Insiders believe that Micron is planning a major expansion of operations at an existing Japanese facility. The North American computer memory manufacturer runs numerous production hubs around the world, but mid-October news reports indicated an upcoming exit from China. Late last week, a Nikkei Asia article alleged that a major $9.6 billion investment is linked to the creation of a speculative new plant at the company's Hiroshima site. Present day operations—located in West Japan—focus on the manufacturing of DRAM, but industry moles reckon that an additional factory will specialize in high-bandwidth memory (HBM).

Leaked information points to possible construction work starting around May 2026. Initial product shipments—perhaps HBM4 and HBM4E—are supposedly projected to begin in 2028. An expanded Japanese manufacturing hub could take the pressure off the firm's Taiwanese factories—currently tasked with pumping out various forms of HBM. Nikkei Asia's report alludes to incentives, leveraged by the Japanese government. The nation's Ministry of Economy, Trade and Industry (METI) could be preparing significant subsidies—secretive parties have whispered of a 500 billion yen total. Global demand for AI-oriented computer memory seems to be growing, with little respite. Suppliers are seemingly still pivoting to meet steep requests from important clients.

NVIDIA is rumored to be changing its approach by supplying only the raw silicon to its AIC partners, rather than bundling its usual GPU and memory kit. Typically, GPU manufacturers like NVIDIA, AMD, and Intel provide their GPU dies with GDDR memory to AIC partners as a kit. These partners then solder the components onto their custom PCBs, often modifying the layout and cooling systems. However, according to Golden Pig Upgrade, NVIDIA might halt this practice and supply only the bare silicon dies due to memory shortages affecting the company's ability to meet orders.

Recently, AMD informed its supply chain of an impending price increase across its entire GPU product line by about 10%. This decision is primarily driven by a significant memory shortage, which has led to soaring DRAM prices and reduced profit margins for GPU manufacturers. AMD's AIB partners have been advised of the planned 10% price hike, and it is expected that AIBs will follow suit in the coming weeks to maintain their margins. However, this now adds to the entire confusion of DRAM shortage, especially for GPUs.

TrendForce's latest research shows that significant increases in conventional DRAM contract prices, higher bit shipments, and growing HBM volumes drove the global DRAM industry revenue to US$41.4 billion in 3Q25, marking a strong 30.9% QoQ growth.

Looking ahead to Q4 2025, DRAM suppliers' inventories are almost depleted, and growth in bit shipments will decrease substantially. Regarding pricing, CSPs continue to be relatively flexible with procurement costs, which causes other applications to also increase their prices to secure supply. Consequently, contract prices for both advanced and legacy nodes, as well as across all major applications, are anticipated to increase rapidly. TrendForce predicts that conventional DRAM contract prices will rise by 45-50% QoQ, and total contract prices (including DRAM and HBM) will increase by 50-55%.

Samsung has reportedly raised prices for several DDR5 memory modules by up to 60% this month as supply tightens amid the global push to build AI data centers, according to two people familiar with the changes. The increases follow Samsung's unusual move to delay October contract pricing, which it normally sets each month. The jump in server-grade DDR5 costs is putting added pressure on hyperscalers and OEMs already short on parts. Fusion Worldwide president Tobey Gonnerman told Reuters that many major server builders "now accept that they won't get nearly enough product," with premiums reaching "extreme" levels. Recent contract pricing shows how fast costs have climbed. Samsung's 32 GB DDR5 module price rose from $149 in September to $239 in November. The company also raised prices for 16 GB and 128 GB DDR5 modules by about 50%, to $135 and $1,194. Prices for 64 GB and 96 GB modules increased by more than 30%, sources said.

The shortage has triggered panic buying for some customers and is disrupting demand for other semiconductor parts. Semiconductor Manufacturing International Corporation (SMIC) said the tight DDR5 market has caused buyers to hold back orders for additional chip types, while Xiaomi warned that rising memory prices are pushing up smartphone production costs. The shortage is turning into an advantage for Samsung. While the company still trails rivals in advanced AI processors, its memory division now has stronger pricing leverage than SK Hynix and Micron. TrendForce expects Samsung's contract prices to rise 40-50% in Q4, higher than the roughly 30% increase forecast for the broader market, supported by strong demand and long-term supply deals running into 2026 and 2027.

Micron Technology, Inc., today announced shipping of qualification samples of its automotive universal flash storage (UFS) 4.1 solution to customers worldwide, enabling rapid data access, robust reliability and enhanced safety and security for next-generation vehicles. Delivering bandwidth of 4.2 gigabytes per second (GB/s) - double that of its predecessor - Micron's automotive UFS 4.1 accelerates data access for AI models, enriching the in-cabin experience by powering features such as voice assistants, personalized infotainment and advanced safety alerts. This bandwidth in advanced driver assistance systems (ADAS) and autonomous vehicles also enables rich data capture from cameras, lidar and radar sensors to upload and feed AI model retraining and enhancement in the data center.

Micron's automotive UFS 4.1 is built with the company's sophisticated 9th-generation (G9) 3D NAND flash memory technology, delivering high performance and capacity and supplying the market with the latest process technology to accelerate AI. With this rollout, Micron G9 NAND is the most advanced NAND in the industry to be qualified for rigorous automotive standards such as the AEC-Q104 - enabling Micron's UFS 4.1 to meet the high bar required for automotive quality, safety and reliability.

TrendForce's latest investigations reveal that despite higher ASPs boosting profitability across the memory industry, capital spending on DRAM and NAND Flash is only anticipated to increase modestly in 2026. This limited investment growth is unlikely to significantly affect bit output. Instead, the emphasis is shifting from capacity expansion to advancements such as process technology upgrades, higher-layer stacking, hybrid bonding, and high-value products such as HBM.

In the DRAM sector, total capital expenditure is expected to reach US$53.7 billion in 2025 and rise to $61.3 billion in 2026, representing about 14% YoY growth. For NAND Flash, spending is projected to rise from $21.1 billion in 2025 to $22.2 billion in 2026, a roughly 5% increase.

Micron has announced a significant revision to the schedule for its semiconductor campus near Clay, New York, with initial production now set to begin at the end of 2030. According to company filings and permit documents, the construction timeline for the first manufacturing facility has been extended from three years to four, and regulators have approved this adjusted schedule. Additionally, Micron has amended its $6.1 billion CHIPS Act agreement to reallocate approximately $1.2 billion from the Clay project to expedite expansion in Boise, Idaho, allowing the Idaho site to become operational well before the New York facility. This is part of Micron's strategy to maintain at least 40% of its DRAM manufacturing operations in the U.S.

The revised schedule significantly delays the following phases of the Clay campus and changes the project's long-term outlook. According to the new plan, the second fab is now set to begin in mid-2030 and is expected to be completed around 2034. Similar delays have affected the third and fourth fabs. As a result, the completion of the entire four-fab campus has been pushed from the original target of 2040 to closer to 2045. This delay also affects the introduction of community support initiatives, such as childcare, housing, and transit improvements, which are intended to benefit the campus workforce. Local officials attribute the slowdown primarily to labor shortages and extended construction cycles.

In an era of unprecedented AI innovation and growth, the entire data center ecosystem is transforming toward more energy-efficient infrastructure to support sustainable growth. With memory playing an increasingly critical role in AI systems, low-power memory solutions have become central to this transformation. Micron Technology, Inc. today announced customer sampling of 192 GB SOCAMM2 (small outline compression attached memory modules) to enable broader adoption of low-power memory within AI data centers. SOCAMM2 extends the capabilities of Micron's first-to-market LPDRAM SOCAMM, delivering 50% more capacity in the same compact footprint. The added capacity can significantly reduce time to first token (TTFT) by more than 80% in real-time inference workloads.

The 192 GB SOCAMM2 uses Micron's most advanced 1-gamma DRAM process technology to deliver greater than 20% improvement in power efficiency, further enabling power design optimization of large data center clusters. These savings become quite significant in full-rack AI installations, which can include more than 40 terabytes of CPU-attached low-power DRAM main memory. The modular design of SOCAMM2 improves serviceability and lays the groundwork for future capacity expansion.