Samsung Electronics a global leader in advanced memory technology, today showcased its latest AI memory innovations at Future of Memory and Storage (FMS) 2026 in Santa Clara, California.

With broad expertise spanning DRAM, NAND, enterprise storage and relevant advanced semiconductor technologies, Samsung presented its latest AI memory portfolio and technology roadmap, including a preview of its zHBM and zNAND-O concept models, the industry-first introduction of its V10 BV-NAND with 400-plus layers and a comprehensive range of solutions designed to advance future AI infrastructure. Samsung is also featuring its AI cloud server-inspired booth at FMS 2026, where approximately 30 memory and storage technologies are on display.

Samsung Electronics Co., Ltd., a global leader in advanced memory technology, today announced mass production of PM1763, the company's PCIe 6.0-based enterprise solid state drive (SSD) optimized for next-generation AI and HPC server environments. As the volume of data required for AI training and inference continues to grow rapidly, enterprise SSDs (eSSDs) capable of delivering data quickly and reliably are becoming increasingly essential to AI infrastructure.

Featuring high-speed data transfer and an optimized controller architecture, PM1763 is expected to serve as a key storage solution for high-performance AI platforms. "Built on industry-leading performance, PM1763 has successfully completed validation for next-generation AI platforms and is well positioned to support evolving AI infrastructure requirements," said Jangseok Choi, Vice President and Head of Memory Product Planning at Samsung Electronics. "As AI models continue to grow in size and complexity, PM1763 will serve as a key solution that enables customers to efficiently scale memory capacity and optimize AI operations."

Samsung is steadily working towards its goal of creating 1000-layer NAND Flash storage modules. However, as manufacturing complexities increase, the company cannot achieve this with a single chip. Instead, it is turning to advanced packaging solutions to stack two 450-layer V-NAND modules into a single 900-layer V-NAND chip. According to ET News, which first reported this manufacturing achievement, Samsung is using Cell Multi-Bonding (CMB) technology, a variant of wafer stacking achieved through hybrid bonding. This process forms a permanent bond between two silicon chips using embedded metal bumps that are fused together to create a single chip. Multiple dies, or in Samsung's case, multiple whole silicon wafers, can be connected by stacking two chip back ends together. Samsung's proprietary process, called CMB, paves the way for 1000-layer V-NAND chips by 2030.

Early last year, Samsung unveiled its 10th-generation V-NAND technology, enabling over 400 layers on a single module. The company also introduced hybrid bonding for the first time, indicating that the technology has since been refined. Interestingly, wafer bonding on already thick 450-layer designs is challenging due to wafer warping. Thankfully, Samsung developed microscopic chucks to address this, along with new bonding techniques to correct overlay issues and misalignment errors when wafers are bonded together. Within the NAND itself, Samsung created new bitline and wordline structures to help manage power consumption and maintain reasonable individual chip sizes.

Samsung has developed a new SSD controller based on the open-source RISC-V instruction set, moving away from the Arm ISA in some of its SSD controllers. With the introduction of the BM9K1 PCIe 5.0 QLC NAND SSD, Samsung has officially created a proprietary RISC-V IP that will serve as a foundation for many SSDs the company plans to release. Announced at the China Flash Market Summit 2026, the BM9K1 SSD has been showcased with just one metric: sequential read speed. Achieving a maximum sequential read speed of 11.4 GB/s, Samsung has reached impressive speeds for QLC NAND Flash. While the sequential write speed is unknown, it is expected to be around 10 GB/s, varying slightly depending on Samsung's design. Typically, high-performance SSDs use TLC NAND, as seen in Samsung's own 9100 Pro SSD, which we reviewed. It features 3D TLC V-NAND V8 with 236 layers. While this SSD uses TLC NAND and has a proprietary Samsung Presto 5 nm controller running on Arm-based cores, Samsung might transition a significant portion of its SSD lineup to a RISC-V based design with the BM9K1, offering satisfactory performance with QLC NAND.

Interestingly, Samsung has designed this SSD with considerations for size, power, and AI. For instance, the BM9K1 PCIe 5.0 SSD replaces the previous BM9C1 PCIe 4.0 SSD controller. Although both use QLC NAND, the newer BM9K1 features a new RISC-V controller and a fresh PCIe 5.0 interface, doubling the performance in sequential reads on average. The power efficiency of the new RISC-V design is also improved. Samsung claims a 23% increase in power efficiency, thanks to the flexibility of RISC-V, which allows for greater customization and optimization of the controller firmware to match I/O patterns with the QLC NAND, resulting in nearly a quarter less power consumption. This improvement is expected to have a significant impact on small form factor PCs and client laptops. The main drawback of the design is the use of QLC NAND, but Samsung may introduce TLC NAND SSDs with RISC-V controllers in the future. For now, these remain on the 5 nm Presto Arm-powered controllers.

As AI processing capabilities continue to evolve toward on-device and desktop supercomputer applications, the need for ultra-fast yet space-efficient local storage becomes increasingly important. Samsung's recent innovation in AI-optimized storage devices drives this point home. Our PM9E1 SSD—the industry's first PCIe Gen 5 4 TB SSD in M.2 22x42 form factor—complements the NVIDIA GB10-powered NVIDIA DGX Spark desktop AI supercomputer.

While AI accelerators enable systems to harness the vast power of AI, only pairing them with performance-optimized, purpose-built storage technology like the Samsung PM9E1 can provide the massive capacity and blazing access speeds to unleash that power that may lead to the development of tomorrow's killer AI apps.

Although we're almost two months away from CES, companies are already starting to tease products that they will have on display at the show. Samsung has unveiled a pair of new SSDs, of which one might find an appeal with owners of portable gaming devices. The other, is not going to be something most consumers will ever have any direct contact with, but the Detachable AutoSSD is an interesting product from Samsung that might spill over in other markets in the future. It's intended for the automotive market and uses the E1.A form factor, but what makes it truly unique is the fact that the SSD controller and the NAND are separated from each other, something Samsung claims improves heat dissipation, but also that it can extend the product life and make upgrades and/or replacements easier.

A more useful addition to its lineup of SSDs is the PM9E1 M.2 22x42, which is an OEM drive in the M.2 2242 form factor. This is as far as we're aware, the first announcement of an M.2 2242 PCIe 5.0 drive, but it's also one of what has to be less than a handful of drives in this form factor that has DRAM onboard. Samsung claims read speeds of up to 14.8 GB/s and write speeds of up to 13.4 GB/s, courtesy of its Presto SSD controller and its V8 TLC V-NAND. The PM9E1 will come in sizes up to 4 TB, which means it's a double sided drive with components on both sides of the PCB, which could make it a tad tricky when it comes to the cooling. However, for those with a handheld gaming device like the Steam Deck, could prove to be one of the best performance options out there, while at the same time offering plenty of storage space for your game library.

Samsung Electronics today reported financial results for the second quarter ended June 30, 2025. The Company posted KRW 74.6 trillion in consolidated revenue, a decrease of 5.8% compared to the previous quarter. Operating profit decreased to KRW 4.7 trillion.

The Device Solutions (DS) Division reported an increase in revenue on the back of expanded sales of high density, high-performance memory products, but inventory value adjustments in memory and one-off costs related to the impacts of export restrictions related to China in non-memory had an adverse effect on profit. In the Device eXperience (DX) Division, operating profit declined quarter-on-quarter due to a sequential decline in sales volume following the launch of new smartphone models in the first quarter. Looking ahead to H2, the DS Division plans to proactively meet the growing demand for high-value-added and AI-driven products and continue to strengthen competitiveness in advanced semiconductors. The DX Division will seek to minimize the impact of uncertainties stemming from tariff policies that are likely to persist.

Samsung Electronics today reported financial results for the first quarter ended March 31, 2025. The Company posted KRW 79.14 trillion in consolidated revenue, an all-time quarterly high, on the back of strong sales of flagship Galaxy S25 smartphones and high-value-added products. Operating profit increased to KRW 6.7 trillion despite headwinds for the DS Division, which experienced a decrease in quarterly revenue.

The Company has allocated its highest-ever annual R&D expenditure for 2024, and in the first quarter of this year, it has also increased its R&D expenditure by 16% compared to the same period last year, amounting to 9 trillion won. Despite the growing macroeconomic uncertainties due to recent global trade tensions and slowing global economic growth, making it difficult to predict future performance, the Company will continue to make various efforts to secure growth. Additionally, assuming that the uncertainties are diminished, it expects its performance to improve in the second half of the year.

Samsung has officially released its next-generation 9100 PRO series solid-state drives to the masses, with availability starting today. The drives leverage PCIe 5.0 technology to deliver sequential read/write speeds of up to 14,800/13,400 MB/s—twice as fast as previous generation offerings—while random read/write performance reaches 2,200K/2,600K IOPS. The series, available in standard and heatsink variants, marks Samsung's first consumer NVMe offerings to reach 8 TB capacity. The 9100 PRO line integrates Samsung's 5 nm controller architecture, yielding up to 49% improved power efficiency compared to prior models. This efficiency gain comes without compromising the form factor, with the drives maintaining a slim 0.35-inch profile. The heatsink variant provides additional thermal regulation capabilities for sustained performance under demanding workloads, making it particularly suitable for AI content generation, 8K video editing, and high-performance gaming applications.

Currently available configurations include 1 TB, 2 TB, and 4 TB capacities, with pricing starting at $199.99 for the standard 1 TB model and $219.99 for the heatsink-equipped equivalent. The 2 TB models are priced at $299.99 and $319.99, respectively, while 4 TB variants command $549.99 and $569.99. Samsung has announced that 8 TB models will enter the market in H2 2025. Compatible with desktop PCs, laptops, and PlayStation 5 consoles featuring appropriate PCIe 5.0 slots, the drives incorporate Samsung's V-NAND TLC (V8) technology and LPDDR4X cache memory—ranging from 1 GB in the 1 TB model to 8 GB in the 8 TB version. Samsung's Magician Software suite provides management capabilities, including performance optimization and firmware update notifications.

Samsung Electronics Co., Ltd. today announced that it held a tool-in ceremony for its new semiconductor research and development complex (NRD-K) at its Giheung campus, marking a significant leap into the future. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone. As a state-of-the-art facility, NRD-K broke ground in 2022 and is set to become a key research base for Samsung's memory, system LSI and foundry semiconductor R&D. With its advanced infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion by 2030 for the complex in an area covering about 109,000 square meters (m²) within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025.

"NRD-K will bolster our development speed, enabling the company to create a virtuous cycle to accelerate fundamental research on next generation technology and mass production. We will lay the foundation for a new leap forward in Giheung, where Samsung Electronics' 50-year history of semiconductors began, and create a new future for the next 100 years," said Young Hyun Jun, Vice Chairman and Head of the Device Solutions Division at Samsung Electronics.

Samsung is currently mass-producing its 9th generation V-NAND flash memory chips with 286 layers unveiled this April. According to the Korean Economic Daily, the company targets V-NAND memory chips with at least 400 stacked layers by 2026. In 2013, Samsung became the first company to introduce V-NAND chips with vertically stacked memory cells to maximize capacity. However, stacking beyond 300 levels proved to be a real challenge with the memory chips getting frequently damaged. To address this problem, Samsung is reportedly developing an improved 10th-generation V-NAND that is going to use the Bonding Vertical (BV) NAND technology. The idea is to manufacture the storage and peripheral circuits on separate layers before bonding them vertically. This is a major shift from the current Co-Packaged (CoP) technology. Samsung stated that the new method will increase the density of bits per unit area by 1.6 times (60%), thus leading to increased data speeds.

Samsung's roadmap is truly ambitious, with plans to launch the 11th generation of NAND in 2027 with an estimated 50% improvement in I/O rates, followed by 1,000-layer NAND chips by 2030. Its competitor, SK hynix, is also working on 400-layer NAND aiming to have the technology ready for mass production by the end of 2025, as we previously mentioned in August. Samsung, the current HBM market leader with a 36.9% market share have also plans for its DRAM sector intending to introduce the sixth-generation 10 nm DRAM, or 1c DRAM by the first half of 2025. Then we can expect to see Samsung's seventh-generation 1d nm (still on 10 nm) in 2026, and by 2027 the company hopes to release its first generation sub-10 nm DRAM, or 0a DRAM memory that will use a Vertical Channel Transistor (VCT) 3D structure similar to what NAND flash utilizes.

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass-producing PM9E1, a PCIe 5.0 SSD with the industry's highest performance and largest capacity. Built on its in-house 5-nanometer (nm)-based controller and eighth-generation V-NAND (V8) technology, the PM9E1 will provide powerful performance and enhanced power efficiency, making it an optimal solution for on-device AI PCs. Key attributes in SSDs, including performance, storage capacity, power efficiency and security, have all been improved compared to its predecessor (PM9A1a).

"Our PM9E1 integrated with a 5 nm controller delivers industry-leading power efficiency and utmost performance validated by our key partners," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "In the rapidly growing on-device AI era, Samsung's PM9E1 will offer a robust foundation for global customers to effectively plan their AI portfolios."

Samsung Electronics, the world leader in advanced memory technology, today announced the release of the 990 EVO Plus, adding to its lineup of leading SSD products. With PCIe 4.0 support and latest NAND technology, the 990 EVO Plus is an ideal solution for consumers seeking enhanced performance and power efficiency on their PCs. Optimized for gaming, business and creative endeavors.

"Our daily lives are increasingly demanding more data with the images we share on social media and high-quality video streaming," said Hangu Sohn, Vice President of Memory Brand Product Biz Team at Samsung Electronics. "The 990 EVO Plus is built for laptop and desktop PC users seeking faster processing speeds and expanded storage capacity."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced it has successfully developed the industry's first PCIe 4.0 automotive SSD based on eighth-generation vertical NAND (V-NAND). With industry-leading speeds and enhanced reliability, the new auto SSD, AM9C1 is an optimal solution for on-device AI capabilities in automotive applications. With about 50% improved power efficiency compared to its predecessor, the AM991, the new 256 GB auto SSD will deliver sequential read and write speeds of up to 4400 MB/s and 400 MB/s, respectively.

"We are collaborating with global autonomous vehicle makers and providing high-performance, high-capacity automotive products," said Hyunduk Cho, Vice President and Head of Automotive Group at Samsung Electronics' Memory Business. "Samsung will continue to lead the Physical AI1 memory market that encompasses applications from autonomous driving to robotics technologies."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced it has begun mass producing PM9E1, a PCle 5.0 SSD with the industry's highest performance and largest capacity. Built on its in-house 5-nanometer (nm)-based controller and eighth-generation V-NAND (V8) technology, the PM9E1 will provide powerful performance and enhanced power efficiency, making it an optimal solution for on-device AI PCs. Key attributes in SSDs, including performance, storage capacity, power efficiency and security, have all been improved compared to its predecessor (PM9A1a).

"Our PM9E1 integrated with a 5 nm controller delivers industry-leading power efficiency and utmost performance validated by our key partners," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "In the rapidly growing on-device AI era, Samsung's PM9E1 will offer a robust foundation for global customers to effectively plan their AI portfolios."

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass production of its one-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND).

With the industry's first mass production of QLC 9th-generation V-NAND, following the industry's first triple-level cell (TLC) 9th-generation V-NAND production in April this year, Samsung is solidifying its leadership in the high-capacity, high-performance NAND flash market.

SK hynix is reportedly developing 400-layer NAND flash memory, with plans to begin mass production by late 2025. The company is collaborating with supply chain partners to develop the necessary process technologies and equipment for 400-layer and higher NAND chips. This information comes from a recent article by Korean media outlet etnews citing industry sources.

SK hynix intends to use hybrid bonding technology to achieve this, which is expected to bring new packaging materials and components suppliers into the supply chain. The development process involves exploring new bonding materials and various technologies for connecting different wafers, including polishing, etching, deposition, and wiring. SK hynix aims to have the technology and infrastructure ready by the end of next year.

Samsung Electronics, the world leader in advanced memory technology, today announced the release of its 1-terabyte (TB) high-capacity microSD cards PRO Plus and EVO Plus. By adopting Samsung's eighth-generation V-NAND (V8) technology, the PRO Plus and EVO Plus boast enhanced performance and high capacity, ideal for content creators and tech enthusiasts needing quick file transfers and storage for everyday use across their devices in everyday use.

"Creators and tech enthusiasts are increasingly using portable devices such as smartphones and handheld gaming devices to store data that demand high-performance and high-capacity," said Hangu Sohn, Vice President of Memory Brand Product Biz Team at Samsung Electronics. "The new high-capacity microSD cards, PRO Plus and EVO Plus, are response to the demand for storing large amounts of high-quality data in a reliable and secure way."

Samsung has introduced its latest BM1743 SSD, boasting an impressive 61.44 TB of storage capacity. The BM1743 utilizes Samsung's seventh-generation 3D NAND (V-NAND) technology, featuring 176 layers of memory cells. This represents a significant leap from its predecessor, the BM1733, which debuted in 2020 with 96-layer technology and a maximum capacity of 32 TB. Performance-wise, the BM1743 doesn't disappoint. It delivers up to 1.6 million random read IOPS and 110,000 random write IOPS, with sequential read and write speeds of 7.2 GB/s and 2.0 GB/s, respectively. These figures position the drive as a highly capable solution for read-intensive workloads. Samsung claims that the new SSD offers double the sequential read and write speeds of its fifth-generation technology, with random reads quadrupling in performance. This advancement suggests that quad-level cell (QLC) SSDs are now approaching the performance levels of their triple-level cell (TLC) counterparts while offering superior storage density.

The BM1743 is available in the traditional U.2 form factor, with an E3.S variant supporting PCIe Gen 5 also in the lineup, thanks to the custom Samsung controller. Samsung has enhanced the durability and data retention capabilities of the BM1743. The new drive boasts an improved endurance rating of 0.26 drive writes per day (DWPD) throughout its warranty period, a notable increase from the BM1733's 0.18 DWPD. Additionally, the BM1743 extends its power-off data retention to three months, tripling the one-month period of its predecessor. In a hint of things to come, Samsung has suggested that a 122.88 TB model may be on the horizon, potentially doubling the capacity of the BM1743. This new offering puts Samsung in direct competition with Solidigm's D5-P5336, which has dominated the high-capacity SSD market for the past year. High-density storage solutions are becoming more important as AI and HPC tasks require and produce massive amounts of data.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), solidifying its leadership in the NAND flash market.

"We are excited to deliver the industry's first 9th-gen V-NAND, which will bring future applications leaps forward. In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product," said SungHoi Hur, Head of Flash Product & Technology at Samsung Electronics. "Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid state drive (SSD) market that meets the needs for the coming AI generation."

Samsung is preparing to launch its 9th Generation V-NAND (3D NAND flash) memory next month, Korean publication Hankyung reports. The 9th Gen 3D NAND flash memory by Samsung is expected to offer 290 layers, a step-up from the 236-layer 8th Gen V-NAND that the company debuted in 2022. Samsung reportedly achieved the 290-layer vertical stacking density through improvements in its flash layer stacking techniques that relies on increasing the layer counts through more memory holes in the flash layer. The cost here is data density per wafer, but a net gain from the increase in layer counts.

The same source behind the 9th Gen V-NAND story also reports that the company is targeting a rather early 2025 launch for its successor—the 10th Gen V-NAND. This is expected to be a mammoth 430-layer 3D NAND flash, a jump of 140 layers over the 9th Gen (which itself jumped by 54 layers over its predecessor). This would put Samsung back on track along with its competitors, Kioxia, SK Hynix, Micron Technology, and YMTC, as they gun for the ambitious goal of 1000-layer 3D NAND flash by 2030.Many Thanks to TumbleGeorge for the tip.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has started sampling its 256-gigabyte (GB) SD Express microSD card with sequential read speed of up to 800 megabytes per second (MB/s) and has commenced mass production of its 1-terabyte (TB) UHS-1 microSD card. With the introduction of its next-generation microSD card line-up, Samsung aims to provide differentiated memory solutions required for tomorrow's mobile computing and on-device AI applications.

"With our two new microSD cards, Samsung has provided effective solutions to address the growing demands of mobile computing and on-device AI," said Hangu Sohn, Vice President of the Memory Brand Product Biz Team at Samsung Electronics. "Despite their tiny size, these memory cards deliver powerful SSD-like performance and capacity to help users get more out of demanding modern and future applications."

Samsung Electronics Co., Ltd., a world leader in advanced memory technology, today held its annual Memory Tech Day, showcasing industry-first innovations and new memory products to accelerate technological advancements across future applications—including the cloud, edge devices and automotive vehicles.

Attended by about 600 customers, partners and industry experts, the event served as a platform for Samsung executives to expand on the company's vision for "Memory Reimagined," covering long-term plans to continue its memory technology leadership, outlook on market trends and sustainability goals. The company also presented new product innovations such as the HBM3E Shinebolt, LPDDR5X CAMM2 and Detachable AutoSSD.

Jung-Bae Lee, President and Head of Memory Business of Samsung Electronics, the world's largest NAND memory supplier, has noted in the blog post that Samsung plans to develop its 9th Generation V-NAND memory with over 300 layers, aiming for mass production in 2024. Samsung's V-NAND uses a double-stack structure and is expected to have more active layers than its competitors' 3D NAND memory, such as SK Hynix's forthcoming 321-layer memory. The increase in layers allows Samsung to enhance storage density and performance in its future 3D NAND devices, focusing on input/output (I/O) speed. While the specific performance details of Samsung's 9th Generation V-NAND remain undisclosed, the memory is expected to be used in next-generation PCIe SSDs with the PCIe 5.0 standard.

Jung-Bae Lee has noted: "New structural and material innovations will be critical in the upcoming era of sub-10-nanometer (nm) DRAM and 1,000-layer vertical V-NAND. As such, we are developing 3D stacked structures and new materials for DRAM while increasing layer count, decreasing height, and minimizing cell interference for V-NAND." The 9th installment of V-NAND, scheduled for 2024, is utilizing 11 nm-class DRAM. Additionally, the blog post reassures the commitment to CXL Memory Modules (CMM), which will enable the composable infrastructure of next-generation systems, especially with high-capacity SSDs powered by V-NAND.

Samsung Electronics Co., Ltd., a world leader in advanced memory technology, today announced the release of a new 4-terabyte (TB) offering in its SSD 990 PRO series. The 990 PRO series is a lineup of high-performance PCIe 4.0 SSDs powered by Samsung's eighth-generation V-NAND (V8) technology and enhanced proprietary controller. Offering blazing-fast speeds and ultimate power efficiency, the 990 PRO series is optimized for massive data volumes, such as 3D/4K graphics work, data analytics and high-quality games, making it the ideal SSD for today's PCs, laptops, game consoles and computing systems. With improved total bytes written (TBW) ratings of up to 2,400 TB, the 990 PRO series ensures increased SSD reliability and longevity, ideal for those with highly demanding workloads and large storage capacity needs.

"Today's gamers and creative professionals require high-capacity, high-performance SSDs and Samsung's new 4 TB SSD 990 PRO is the perfect storage solution to meet their needs," said Hangu Sohn, Corporate Vice President of the Memory Brand Product Biz Team at Samsung Electronics. "As the demand for high-resolution content and ultra-fast data-processing speeds continues to grow, high-performance NVMe storage has become a core requirement."