TSMC on Monday announced the N12e silicon fabrication node. An enhancement of its 12 nm FinFET node, N12e is designed for value 5G application processors, MODEMs, and IoT edge devices, such as true-wireless earbuds, smartwatch processors, wearables, VR HMDs, entry-level and mainstream SoCs, etc. The node has been derived from the company's 12FFC+_ULL node, and fits into the 12-16 nm class of nodes. It's intended to succeed the company's 22ULL node (in terms of pricing), offering a 76% increase in logic density, 49% increase in clock speed at a given power, 55% improvement in power draw at a given speed, 50% reduction in SRAM leakage current, and low Vdd, with support for logic voltages as low as 0.4 V. That last bit in particular should make the node suitable for tiny, battery-powered devices such as wearables.