Infineon Starts World's First 300-Millimeter Power Silicon Carbide (SiC) Wafer Production
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has successfully processed 300-millimeter silicon carbide wafers into functional power devices at its fab in Villach, Austria. Infineon is the first company to pioneer this innovation milestone in a full-scale semiconductor fab environment. It was realized by utilizing existing silicon (Si) manufacturing equipment. This early achievement of functional power devices reflects Infineon's strong focus on providing customers with a comprehensive portfolio of high-performance SiC power semiconductors and ensuring long-term supply. Chip production on 300 mm wafers is technologically more advanced and significantly more efficient than 200 mm wafers, since the larger wafer diameter offers 2.3 times more chips per wafer.






































