GlobalFoundries Returns to Advanced-Node Race With 7 nm-Class FDX Fusion
Back in the now distant 2018, the semiconductor industry had three major players in contract leading-edge node manufacturing: TSMC, Samsung, and GlobalFoundries. At that time, Intel did not accept external clients. However, as node design became increasingly expensive—requiring multi-billion dollar investments—and more complex, with many players encountering yield and manufacturing difficulties, GlobalFoundries announced that it was stopping its 7 nm node development indefinitely. This left only two companies in the leading-edge race, but GlobalFoundries continued to develop unique semiconductor solutions that did not focus on smaller transistor sizes.
Today, the company is back at a similar stopping point but with a unique solution called FDX Fusion, based on fully-depleted silicon-on-insulator (FD-SOI) technology. Unlike traditional CMOS, GlobalFoundries takes substrate isolation a step further by creating a fully insulating layer beneath the channel. This enables highly specialized capabilities, such as ultra-low-power in-memory computing, seamless integration of embedded non-volatile memory (like eMRAM), and highly efficient dense logic designs. With FDX Fusion, GlobalFoundries claims 7 nm-class node characteristics in terms of size and twice the transistor density of the first-generation 22FDX node, which was designated as a 22 nm-class design.
Today, the company is back at a similar stopping point but with a unique solution called FDX Fusion, based on fully-depleted silicon-on-insulator (FD-SOI) technology. Unlike traditional CMOS, GlobalFoundries takes substrate isolation a step further by creating a fully insulating layer beneath the channel. This enables highly specialized capabilities, such as ultra-low-power in-memory computing, seamless integration of embedded non-volatile memory (like eMRAM), and highly efficient dense logic designs. With FDX Fusion, GlobalFoundries claims 7 nm-class node characteristics in terms of size and twice the transistor density of the first-generation 22FDX node, which was designated as a 22 nm-class design.





































