Innodisk, a leading global AI solution provider, continues to push the boundaries of innovation with the launch of its cutting-edge Compute Express Link (CXL) Memory Module, which is designed to meet the rapid growth demands of AI servers and cloud data centers. As one of the few module manufacturers offering this technology, Innodisk is at the forefront of AI and high-performance computing.

The demand for AI servers is rising quickly, with these systems expected to account for approximately 65% of the server market by 2024, according to Trendforce (2024). This growth has created an urgent need for greater memory bandwidth and capacity, as AI servers now require at least 1.2 TB of memory to operate effectively. Traditional DDR memory solutions are increasingly struggling to meet these demands, especially as the number of CPU cores continues to multiply, leading to challenges such as underutilized CPU resources and increasing latency between different protocols.

TrendForce reports that memory module makers have been aggressively increasing their DRAM inventories since 3Q23, with inventory levels rising to 11-17 weeks by 2Q24. However, demand for consumer electronics has not rebounded as expected. For instance, smartphone inventories in China have reached excessive levels, and notebook purchases have been delayed as consumers await new AI-powered PCs, leading to continued market contraction.

This has led to a weakening in spot prices for memory products primarily used in consumer electronics, with Q2 prices dropping over 30% compared to Q1. Although spot prices remained disconnected from contract prices through August, this divergence may signal potential future trends for contract pricing.

A critical security flaw known as "Sinkclose" (CVE-2023-31315) has been identified in all AMD processors dating back to 2006, potentially affecting hundreds of millions of devices worldwide. This vulnerability allows malicious actors to exploit the chip architecture, leading to unauthorized access to sensitive data. Researchers Enrique Nissim and Krzysztof Okupski, researchers from the security firm IOActive, have revealed that the vulnerability can be exploited through various methods, enabling attackers to extract confidential information from affected systems, including passwords and personal data. The issue is especially concerning, given that it is present in all AMD CPUs made in the last 18 years and their widespread use in both consumer and enterprise environments. However, to exploit this vulnerability, an attacker must possess access to system's kernel. Downloading of malware-infused files can trigger it, so general safety measures are recommended.

The Sinkclose method exploits a little-known capability in AMD processors called TClose. This name is a blend of "TClose" and "Sinkhole," with the latter referring to a previous vulnerability found in Intel's System Management Mode in 2015. AMD chips employ a protective mechanism named TSeg, which blocks operating systems from accessing a specific memory area reserved for System Management Mode (SMM), known as System Management Random Access Memory (SMRAM). However, the TClose feature is designed to maintain backward compatibility with older hardware that might use the same memory addresses as SMRAM. It does this by remapping memory when activated. The security experts discovered that they could manipulate this TClose remapping function using only standard operating system permissions. By doing so, they could deceive the SMM into retrieving altered data, enabling them to redirect the processor and run their own instructions with the high-level privileges of SMM. This technique essentially allows attackers to bypass standard security measures and execute malicious code at one of the most privileged levels of the processor, potentially compromising the entire system.

Samsung Electronics is set to make a significant leap in semiconductor manufacturing technology with the introduction of its first High-NA 0.55 EUV lithography tool. The company plans to install the ASML Twinscan EXE:5000 system at its Hwaseong campus between Q4 2024 and Q1 2025, marking a crucial step in developing next-generation process technologies for logic and DRAM production. This move positions Samsung about a year behind Intel but ahead of rivals TSMC and SK Hynix in adopting High-NA EUV technology. The system is expected to be operational by mid-2025, primarily for research and development purposes. Samsung is not just focusing on the lithography equipment itself but is building a comprehensive ecosystem around High-NA EUV technology.

The company is collaborating with several key partners like Lasertec (developing inspection equipment for High-NA photomasks), JSR (working on advanced photoresists), Tokyo Electron (enhancing etching machines), and Synopsys (shifting to curvilinear patterns on photomasks for improved circuit precision). The High-NA EUV technology promises significant advancements in chip manufacturing. With an 8 nm resolution capability, it could make transistors about 1.7 times smaller and increase transistor density by nearly three times compared to current Low-NA EUV systems. However, the transition to High-NA EUV comes with challenges. The tools are more expensive, costing up to $380 million each, and have a smaller imaging field. Their larger size also requires chipmakers to reconsider fab layouts. Despite these hurdles, Samsung aims for commercial implementation of High-NA EUV by 2027.

Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents patterned structures obtained after exposure with the 0.55NA EUV scanner in the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands. Random logic structures down to 9,5 nm (19 nm pitch), random vias with 30 nm center-to-center distance, 2D features at 22 nm pitch, and a DRAM specific lay out at P32nm were printed after single exposure, using materials and baseline processes that were optimized for High NA EUV by imec and its partners in the framework of imec's Advanced Patterning Program. With these results, imec confirms the readiness of the ecosystem to enable single exposure high-resolution High NA EUV Lithography.

Following the recent opening of the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands, customers now have access to the (TWINSCAN EXE:5000) High NA EUV scanner to develop private High NA EUV use cases leveraging the customer's own design rules and lay outs.

Thermaltake, a leading PC DIY brand for premium hardware solutions, kicked off the "2024 Thermaltake RAM MOD Invitational" an annual competition that gathers modders from all corners of the world to mod the designated Thermaltake ram into their own masterpiece. This year we invited six modders from Austria, Italy, Japan, Thailand, and the United Kingdom to modify the TOUGHRAM XG RGB D5 Memory DDR5.

Participating modders are given a specific time frame to modify the RAM heatsinks, without changing the overall appearance and layout of the RAM itself. Contestants must only use our TOUGHRAM XG RGB D5 modules and cannot add the ram to a motherboard or a PC build. However, they can create a stand or platform for the modules but the overall modules must remain intact with the original design as the main focus.

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass production for the industry's thinnest 12 nanometer (nm)-class, 12-gigabyte (GB) and 16 GB LPDDR5X DRAM packages, solidifying its leadership in the low-power DRAM market. Leveraging its extensive expertise in chip packaging, Samsung is able to deliver ultra-slim LPDDR5X DRAM packages that can create additional space within mobile devices, facilitating better airflow. This supports easier thermal control, a factor that is becoming increasingly critical especially for high-performance applications with advanced features such as on-device AI.

"Samsung's LPDDR5X DRAM sets a new standard for high-performance on-device AI solutions, offering not only superior LPDDR performance but also advanced thermal management in an ultra-compact package," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "We are committed to continuous innovation through close collaboration with our customers, delivering solutions that meet the future needs of the low-power DRAM market."

GIGABYTE TECHNOLOGY Co. Ltd, a leading manufacturer of motherboards, graphics cards, and hardware solutions, released the GIGABYTE exclusive groundbreaking AI TOP Utility. With reinvented workflows, user-friendly interface, and real-time progress monitoring, AI TOP Utility provides a reinventing touch of local AI model training and fine-tuning. It features a variety of groundbreaking technologies that can be easily adapted by beginners or experts, for most common open-source LLMs, in anyplace even on your desk.

GIGABYTE AI TOP is the all-round solution for local AI Model Fine-tuning. Running local AI training and fine-tuning on sensitive data can relatively provide greater privacy and security with maximum flexibility and real-time adjustment. Collocating with GIGABYTE AI TOP hardware and AI TOP Utility, the common constraints of GPU VRAM insufficiency when trying to execute AI fine-tuning locally can be addressed. By GIGABYTE AI TOP series motherboard, PSU, and SSD, as well as GIGABYTE graphics cards lineup covering NVIDIA GeForce RTX 40 Series, AMD Radeon RX 7900 Series, Radeon Pro W7900 and W7800 series, the size of open-source LLM fine-tuning can now reach up to 236B and more.

An Innovate UK project worth £1.1M has been awarded to the Lancaster University spinout firm Quinas, the global semiconductor company IQE and Lancaster and Cardiff Universities. Quinas will coordinate the ambitious project which is the first step towards volume production of the universal computer memory ULTRARAM invented by Lancaster Physics Professor Manus Hayne.

ULTRARAM has extraordinary properties, combining the non-volatility of a data storage memory, like flash, with the speed, energy-efficiency, and endurance of a working memory, like DRAM. Most of the funding for the one-year project will be spent at IQE which will scale up the manufacture of compound semiconductor layers from Lancaster University to an industrial process at the Cardiff based firm. This will involve IQE developing advanced capability for growth of the compound semiconductors gallium antimonide and aluminium antimonide for the first time. The project follows significant investment to boost the UK semiconductor industry and the establishment of the world's first compound semiconductor cluster in South Wales.

South Korean giant SK Group has unveiled plans for substantial investments in AI and semiconductor technologies worth almost $75 billion. SK Group subsidiary, SK Hynix, will lead this initiative with a staggering 103 trillion won ($74.6 billion) investment over the next three years, with plans to realize the investment by 2028. This commitment is in addition to the ongoing construction of a $90 billion mega fab complex in Gyeonggi Province for cutting-edge memory production. SK Group has further pledged an additional $58 billion, bringing the total investment to a whopping $133 billion. This capital infusion aims to enhance the group's competitiveness in the AI value chain while funding operations across its 175 subsidiaries, including SK Hynix.

While specific details remain undisclosed, SK Group is reportedly exploring various options, including potential mergers and divestments. SK Group has signaled that business practices need change amid shifting geopolitical situations and the massive boost that AI is bringing to the overall economy. We may see more interesting products from SK Group in the coming years as it potentially enters new markets centered around AI. This strategic pivot comes after SK Hynix reported its first loss in a decade in 2022. However, the company has since shown signs of recovery, fueled by the surging demand for memory solutions for AI chips. The company currently has a 35% share of the global DRAM market and plans to have an even stronger presence in the coming years. The massive investment aligns with the South Korean government's recently announced $19 billion support package for the domestic semiconductor industry, which will be distributed across companies like SK Hynix and Samsung.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its third quarter of fiscal 2024, which ended May 30, 2024.

Fiscal Q3 2024 highlights

• Revenue of $6.81 billion versus $5.82 billion for the prior quarter and $3.75 billion for the same period last year
• GAAP net income of $332 million, or $0.30 per diluted share
• Non-GAAP net income of $702 million, or $0.62 per diluted share
• Operating cash flow of $2.48 billion versus $1.22 billion for the prior quarter and $24 million for the same period last year

"Robust AI demand and strong execution enabled Micron to drive 17% sequential revenue growth, exceeding our guidance range in fiscal Q3," said Sanjay Mehrotra, President and CEO of Micron Technology. "We are gaining share in high-margin products like High Bandwidth Memory (HBM), and our data center SSD revenue hit a record high, demonstrating the strength of our AI product portfolio across DRAM and NAND. We are excited about the expanding AI-driven opportunities ahead, and are well positioned to deliver a substantial revenue record in fiscal 2025."

TrendForce reports that a recovery in demand for general servers—coupled with an increased production share of HBM by DRAM suppliers—has led suppliers to maintain their stance on hiking prices. As a result, the ASP of DRAM in the third quarter is expected to continue rising, with an anticipated increase of 8-13%. The price of conventional DRAM is expected to rise by 5-10%, showing a slight contraction compared to the increase in the second quarter.

TrendForce notes that buyers were more conservative about restocking in the second, and inventory levels on both the supplier and buyer sides did not show significant changes. Looking ahead to the third quarter, there is still room for inventory replenishment for smartphones and CSPs, and the peak season for production is soon to commence. Consequently, it is expected that smartphones and servers will drive an increase in memory shipments in the third quarter.

Kingston today formally launched the FURY Renegade RGB Limited Edition DDR5 memory kits. These were shown at the company's Computex 2024 booth earlier this month. The module's design involves a two-tone die-cast metal shroud over the aluminium heat-spreaders, which are crowned by silicone diffusers for the RGB LEDs. The modules have a 19-preset lighting controller. You control the lighting using the first-party FURY CTRL software. Kingston says that the design of these modules are inspired by race cars.

The Kingston FURY Renegade RGB Limited Edition is available in only one density—48 GB (2x 24 GB kit), and in only one speed variant, DDR5-8000, with timings of CL36-48-48, and DRAM voltage of 1.45 V. The module also includes profiles for DDR5-7200 and DDR5-6400, with tighter timings. The modules pack an Intel XMP 3.0 SPD profile that enables the advertised speeds on Intel platforms. Kingston has extensively tested the modules on the latest Intel platforms, such as the 14th Gen Core "Raptor Lake Refresh" for compatibility with the advertised XMP speeds. The company didn't reveal pricing.

SK hynix has returned to Las Vegas to showcase its leading AI memory solutions at HPE Discover 2024, Hewlett Packard Enterprise's (HPE) annual technology conference. Held from June 17-20, HPE Discover 2024 features a packed schedule with more than 150 live demonstrations, as well as technical sessions, exhibitions, and more. This year, attendees can also benefit from three new curated programs on edge computing and networking, hybrid cloud technology, and AI. Under the slogan "Memory, The Power of AI," SK hynix is displaying its latest memory solutions at the event including those supplied to HPE. The company is also taking advantage of the numerous networking opportunities to strengthen its relationship with the host company and its other partners.

The World's Leading Memory Solutions Driving AI
SK hynix's booth at HPE Discover 2024 consists of three product sections and a demonstration zone which showcase the unprecedented capabilities of its AI memory solutions. The first section features the company's groundbreaking memory solutions for AI, including HBM solutions. In particular, the industry-leading HBM3E has emerged as a core product to meet the growing demands of AI systems due to its exceptional processing speed, capacity, and heat dissipation. A key solution from the company's CXL lineup, CXL Memory Module-DDR5 (CMM-DDR5), is also on display in this section. In the AI era where high performance and capacity are vital, CMM-DDR5 has gained attention for its ability to expand system bandwidth by up to 50% and capacity by up to 100% compared to systems only equipped with DDR5 DRAM.

TrendForce reveals that the DRAM industry experienced a 5.1% revenue increase in 1Q24 compared to the previous quarter. This growth—reaching US$18.35 billion—was driven by rising contract prices for mainstream products, with the price increase being more significant than in 4Q23. As a result, most companies in the industry continued to see revenue growth.

The top three suppliers experienced a decline in shipments in the first quarter, demonstrating the industry's off-season effect. Additionally, downstream companies had higher inventory levels, which led to a significant reduction in procurement volume. As for ASP, the top three suppliers continued to benefit from contract price increases seen in 4Q23. With inventory levels still healthy, there was a strong intention to raise prices.

SK hynix presented its leading AI memory solutions at COMPUTEX Taipei 2024 from June 4-7. As one of Asia's premier IT shows, COMPUTEX Taipei 2024 welcomed around 1,500 global participants including tech companies, venture capitalists, and accelerators under the theme "Connecting AI". Making its debut at the event, SK hynix underlined its position as a first mover and leading AI memory provider through its lineup of next-generation products.

"Connecting AI" With the Industry's Finest AI Memory Solutions
Themed "Memory, The Power of AI," SK hynix's booth featured its advanced AI server solutions, groundbreaking technologies for on-device AI PCs, and outstanding consumer SSD products. HBM3E, the fifth generation of HBM1, was among the AI server solutions on display. Offering industry-leading data processing speeds of 1.18 terabytes (TB) per second, vast capacity, and advanced heat dissipation capability, HBM3E is optimized to meet the requirements of AI servers and other applications. Another technology which has become crucial for AI servers is CXL as it can increase system bandwidth and processing capacity. SK hynix highlighted the strength of its CXL portfolio by presenting its CXL Memory Module-DDR5 (CMM-DDR5), which significantly expands system bandwidth and capacity compared to systems only equipped with DDR5. Other AI server solutions on display included the server DRAM products DDR5 RDIMM and MCR DIMM. In particular, SK hynix showcased its tall 128-gigabyte (GB) MCR DIMM for the first time at an exhibition.

At Computex 2024, Colorful has introduced a new PC series of premium componentry for games, called iGame Ultra Series. Carrying a premium white aesthetics, the Ultra Series serves as clean and elegant component for PC builds. At the heart of the Ultra Series is the GeForce RTX 4080 SUPER graphics card. The card has a triple-fan cooling solution with vapor chamber technology that keeps temperatures under control. Powering this GPU is the iGame Z790D5 Ultra motherboard. Supporting the latest Intel 14th Gen CPUs and up to 192 GB of DDR5-7800 RAM. An array of ultra-fast PCIe 5.0 and 4.0 M.2 slots allow multiple high-speed SSDs for ridiculous storage performance. Keeping all of these elite components running is the 850 W iGame P850G Ultra W 80 Plus Gold power supply. Its modular design with dedicated PCIe 5.0 connectors ensures clean cable management and stable power delivery. For cooling the CPU, there is the iGame LQ360 Ultra W all-in-one liquid cooler, which sports a massive 360 mm radiator and a trio of high-static pressure fans. All of these premium components are housed in the iGame C23A Ultra W full-tower chassis. With a spacious dual-compartment layout, front USB-C port, and preinstalled vertical GPU bracket, it offers both incredible expandability and sleek aesthetics.

Project XPG NeonStorm PCIe Gen 5 SSD, which won an award at Computex, has a dual active cooling system with an aluminium air duct, liquid cooling, and dual fans. This increases the Gen 5 SSD's cooling efficiency by 10%. The Legend 970 Pro PCIe Gen 5 SSD has read/write speeds up to 14,000/12,000 MB/s, using an aluminium heatsink and a micro fan for better heat dissipation.

The XPG Lancer Neon RGB DDR5 memory module uses a heat dissipating coating on the PCB, a heatsink made of 50% recycled materials, and an eco-friendly manufacturing process. It's the first eco-friendly RGB memory module, performing up to 8,000 MT/s with 16 GB and 24 GB capacities.

The Samsung Electronics Union is reportedly planning to strike on June 7, TrendForce reports that this strike will not impact DRAM and NAND Flash production, nor will it cause any shipment shortages. Additionally, the spot prices for DRAM and NAND Flash had been declining prior to the strike announcement, and there has been no change in this downtrend since the announcement.

Samsung's global share of DRAM and NAND Flash output in 2023 was 46.8% and 32.4%, respectively. Even though the South Korean plants account for all 46.8% of global DRAM production and about 17.8% of global NAND Flash production, TrendForce identifies four reasons why this strike will not impact production. Firstly, the strike involves employees at Samsung's headquarters in Seocho, Seoul, where union participation in higher, but these employees do not directly engage in production. Secondly, this strike is planned for only one day, which falls within the flexible scheduling range for production.

Last year, Micron unveiled plans to construct a cutting-edge DRAM factory in Hiroshima, Japan. However, the project has faced a significant two-year delay, pushing back the initial timeline for mass production of the company's most advanced memory products. Originally slated to begin mass production by the end of 2025, Micron now aims to have the new facility operational by 2027. The complexity of integrating extreme ultraviolet lithography (EUV) equipment, which enables the production of highly advanced chips, has contributed to the delay. The Hiroshima plant will produce next-generation 1-gamma DRAM and high-bandwidth memory (HBM) designed for generative AI applications. Micron expects the HBM market, currently dominated by rivals SK Hynix and Samsung, to experience rapid growth, with the company targeting a 25% market share by 2025.

The project is expected to cost between 600 and 800 billion Japanese yen ($3.8 to $5.1 billion), with Japan's government covering one-third of the cost. Micron has received a subsidy of up to 192 billion yen ($1.2 billion) for construction and equipment, as well as a subsidy to cover half of the necessary funding to produce HBM at the plant, amounting to 25 billion yen ($159 million). Despite the delay, the increased investment in the factory reflects Micron's commitment to advancing its memory technology and capitalizing on the growing demand for HBM. An indication of that is the fact that customers have pre-ordered 100% of the HBM capacity for 2024, not leaving a single HBM die unused.

EK, a leader in premium liquid cooling solutions, proudly unveils the EK-Quantum Momentum² Quad RAM Module Set D-RGB, an advanced cooling solution meticulously designed for effective thermal management of DDR4 and DDR5 memory modules. This comprehensive set includes a water block capable of covering four RAM sticks with aluminium heatsinks, integrating high-quality cooling efficiency with dynamic RGB lighting to enhance both the performance and visual appeal of any high-end computing setup. The system is specifically engineered to support configurations with four RAM sticks, optimizing cooling for modern high-performance memory arrays.

Enhanced Cooling and Sophisticated Design
The EK-Quantum Momentum² Quad RAM Module Set D-RGB accommodates both single and double-sided DDR4 and DDR5 memory modules, ensuring versatility across different RAM configurations. It features four sleek, black, anodized aluminium heatsinks with an elox finish for enhanced durability and corrosion resistance. This treatment not only improves the heatsinks' appearance but also boosts their thermal conductivity and cooling effectiveness.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell Mechanism for 3D X-DRAM. Andy Hsu, Founder & CEO presented groundbreaking Technology CAD (TCAD) simulation results for NEO's 3D X-DRAM during the 16th IEEE International Memory Workshop (IMW) 2024 in Seoul, Republic of Korea.

Neo Semiconductor reveals a unique performance boosting mechanism called Back-gate Channel-depth Modulation (BCM) for Floating Body Cell that can increase data retention by 40,000X and sensing window by 20X.

The battle is over. Microsoft is finally changing the measuring methodology in its Task Manager from Mega Hertz (MHz) to Mega Transfers per second (MT/s). This comes amid the industry push for more technical correctness in RAM measuring, where the MHz nomenclature does not technically represent the speed at which the memory is actually running. While DRAM manufacturers list both MHz and MT/s, the advertised MHz number is much higher than the effective speed at which the DRAM is running, resulting in confusion and arguments in the industry about choosing the correct labeling of DRAM. A little history lesson teaches us that when single data rate (SDR) RAM was introduced, 100 MHz memory would perform 100 MT/s. However, when double data rate (DDR) memory appeared, it would allow for two memory transfers per clock cycle.

This would introduce some confusion where the MHz speed is often mixed up with MT/s. Hence, Microsoft is trying to repair the damage and list memory speeds in MT/s. Modern DDR5 memory makers are advertising DDR5 kits with "DDR5-4800" or "DDR5-6000," without any suffix like MHz or MT/s. This is because, for example, a DDR5-6000 kit runs at 6,000 MT/s, the effective speed is only 3,000 MHz. The actual clock of the memory is only half of what is advertised. The MT/s terminology would be more accurate and describe memory better. This Task Manager update is in the Windows 11 Insider Preview Build 22635.3570 in the Beta Channel, which will trickle down to stable Windows 11 updates for everyone soon.

TrendForce's latest forecasts reveal contract prices for DRAM in the second quarter are expected to increase by 13-18%, while NAND Flash contract prices have been adjusted to a 15-20% Only eMMC/UFS will be seeing a smaller price increase of about 10%.

Before the 4/03 earthquake, TrendForce had initially predicted that DRAM contract prices would see a seasonal rise of 3-8% and NAND Flash 13-18%, significantly tapering from Q1 as seen from spot price indicators which showed weakening price momentum and reduced transaction volumes. This was primarily due to subdued demand outside of AI applications, particularly with no signs of recovery in demand for notebooks and smartphones. Inventory levels were gradually increasing, especially among PC OEMs. Additionally, with DRAM and NAND Flash prices having risen for 2-3 consecutive quarters, the willingness of buyers to accept further substantial price increases had diminished.

Thanks to recent developments in the AI field, and following in the wake of the world's recovery from COVID-19, the transition of factories to partial or full automation proceeds with unstoppable momentum. And the best place to learn about the latest technologies that aim to make this transition as painless as possible is at Automate 2024. This is North America's largest robotics and automation event, and it will be held in Chicago, Illinois from May 6 to 9.

Automate attracts professionals from around the world, and Apacer is no exception. Apacer team will be on hand to discuss the latest technological developments created by our experienced R&D team. Many of these developments were specifically created to reduce the pain points commonly experienced by fully automated facilities. Take CoreSnapshot, for example. This backup and recovery technology can restore a crashed system to full operation in just a few seconds, reducing downtime and associated maintenance costs. Apacer recently updated CoreSnapshot, creating CoreRescue ASR and CoreRescue USR. The name of CoreRescue ASR refers to Auto Self Recovery. This technology will harness AI to learn the system booting process and analyze how long a boot should take. If this average boot time is significantly longer than usual, the system will trigger the self-recovery process and revert to an earlier, uncorrupted version of the drive's content. CoreRescue USR offers similar functionality, except the self-recovery process is triggered by connecting a small USB stick drive.