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GPU Memory Latency Tested on AMD's RDNA 2 and NVIDIA's Ampere Architecture

Graphics cards have been developed over the years so that they feature multi-level cache hierarchies. These levels of cache have been engineered to fill in the gap between memory and compute, a growing problem that cripples the performance of GPUs in many applications. Different GPU vendors, like AMD and NVIDIA, have different sizes of register files, L1, and L2 caches, depending on the architecture. For example, the amount of L2 cache on NVIDIA's A100 GPU is 40 MB, which is seven times larger compared to the previous generation V100. That just shows how much new applications require bigger cache sizes, which is ever-increasing to satisfy the needs.

Today, we have an interesting report coming from Chips and Cheese. The website has decided to measure GPU memory latency of the latest generation of cards - AMD's RDNA 2 and NVIDIA's Ampere. By using simple pointer chasing tests in OpenCL, we get interesting results. RDNA 2 cache is fast and massive. Compared to Ampere, cache latency is much lower, while the VRAM latency is about the same. NVIDIA uses a two-level cache system consisting out of L1 and L2, which seems to be a rather slow solution. Data coming from Ampere's SM, which holds L1 cache, to the outside L2 is taking over 100 ns of latency.

Netac Kickstarts Research and Development Process for 10 GHz DDR5 Memory

Netac, a Chinese company based in Shenzen claiming to be the inventor of USB flash drive, has reportedly started the research and development process of DDR5 memory modules that will outperform everything on the market. Netac is rumored to have started the development of DDR5 memory that will have a frequency of over 10,000 MHz. While the JEDEC specification notes that the DDR5 frequency range is between 4800-8400 MHz, manufacturers are always welcome to go over the official specifications. Being that Netac is a relatively new player in the PC memory space, we are wondering how the company plans to execute its plans.

A 10 GHz DDR5 memory would require a very high voltage to run, meaning high heat output. We know that DDR5 chips can run at 2.6 V, according to T-FORCE, who tested such a configuration earlier. The next potential problem would be a platform that could handle 10 GHz DDR5 memory, however, by the time we get this memory in our hands, platforms will mature enough to handle high-speed RAM. The first batch of new DDR5 memory that was sent to Netac was Micron's Z9ZSB modules, which are 2Gx8, CL40 memory modules. They are manufactured in the 1znm memory manufacturing node Micron uses. It is left to be seen what we end up with and if Netac delivers on its promise.

Engineers Upgrade Soldered Components on Apple M1 Mac Mini

The Apple M1 processor features integrated memory directly on the chip to reduce latency, power, and size. While this design may be good for the overall user experience it does not bode well for upgradability requiring users to pay up for a more expensive model. Some Chinese engineers have recently shown how it is possible to upgrade the soldered memory and storage components given you have the time, skills, and money. The DRAM and NAND chips are soldered to the M1 chip and motherboard but can be removed and replaced with higher capacity chips using a specialty soldering station. The engineers upgraded the base model M1 Mac Mini with 8 GB RAM and 256 GB storage to 16 GB RAM and 1 TB storage. The upgrade didn't require firmware modifications according to the source which is very impressive if true.

SK Hynix to Build $106 Billion Mega Factory in South Korea

Today, we are getting a report coming from the South Korean press, stating that the country of South Korea has just given SK Hynix the green light to start building the mega factory complex. Being in the planning phase for a long time, the new mega factory is going to be located in Yongin, a city set 50 km south of the capital Seoul. The company expects to break ground with construction in Q4 of this year, and finish everything and start volume production of DRAM in 2025. When it comes to the size of the new mega factory, the plant is going to have an area of ​​4.15 million square meters.

The total cost of it will be about $106 billion worth of investment from SK Hynix, making all the recent fab construction plans look tiny compared to this massive investment. The mega factory complex would consist out of four fabs, where their total wafer per month output would be around 800,000. These foundries will be in charge of producing regular DRAM, and next-generation DRAM technologies like we have talked about just a few days ago. It remains to be seen what the company will come out with in the future, however, we are watching its moves closely.
SK Hynix Foundry

SK Hynix Envisions the Future: 600-Layer 3D NAND and EUV-made DRAM

On March 22nd, the CEO of SK Hynix, Seok-Hee Lee, gave a keynote speech to the IEEE International Reliability Physics Symposium (IRPS) and shared with experts a part of its plan for the future of SK Hynix products. The CEO took the stage and delivered some conceptual technologies that the company is working on right now. At the center of the show, two distinct products stood out - 3D NAND and DRAM. So far, the company has believed that its 3D NAND scaling was very limited and that it can push up to 500 layers sometime in the future before the limit is reached. However, according to the latest research, SK Hynix will be able to produce 600-layer 3D NAND technology in the distant future.

So far, the company has managed to manufacture and sample 512Gb 176-layer 3D NAND chips, so the 600-layer solutions are still far away. Nonetheless, it is a possibility that we are looking at. Before we reach that layer number, there are various problems needed to be solved so the technology can work. According to SK Hynix, "the company introduced the atomic layer deposition (ALD) technology to further improve the cell property of efficiently storing electric charges and exporting them when needed, while developing technology to maintain uniform electric charges over a certain amount through the innovation of dielectric materials. In addition to this, to solve film stress issues, the mechanical stress levels of films is controlled and the cell oxide-nitride (ON) material is being optimized. To deal with the interference phenomenon between cells and charge loss that occur when more cells are stacked at a limited height, SK Hynix developed the isolated-charge trap nitride (isolated-CTN) structure to enhance reliability."

TrendForce: Consumer DRAM Pricing to Increase 20% in 2Q2021 Due to Increased Demand

According to TrendForce, we technology enthusiasts will have other rising prices to contend with throughout 2021, adding to the already ballooning discrete GPU and latest-gen CPUs from the leading manufacturer. The increased demand due to the COVID pandemic stretched the usual stocks to their limits, and due to the tremendous, multiple-month lead times between semiconductor orders and their fulfillment from manufacturers, the entire supply infrastructure was spread too thin for the increased worldwide needs. This leads to increased component pricing, which in turn leads to higher ASP pricing for DRAM. Adding to that equation, of course, is the fact that companies are now more careful, and are placing bigger orders so as to be able to weather these sudden demand changes.

TrendForce says that DRAM pricing has already increased 3-8% in 1Q2021, and that market adjustments will lead to an additional increase somewhere between 13-18% for contract pricing. Server pricing is projected to increase by 20%; graphics DRAM is expected to increase 10-15% in the same time-span, thus giving us that strange stomach churn that comes from having to expect even further increases in graphics card end-user pricing; and overall DRAM pricing for customers is expected to increase by 20% due to the intensifying shortages. What a time to be a system builder.

Longsys Launches DDR5 Memory and Publishes Test Data

Longsys Electronics launches the Longsys DDR5 memory module (ES1). The company has done so in order to keep up with the development of storage technologies, to meet expectations from industry professionals and users regarding future product technology development, and to provide more possibilities for the future of storage industry applications. Moreover, Longsys' FORESEE, a technical storage brand, and Lexar, a storage brand for high-end consumer goods, will also provide strong support in their main areas of application.

The newly-launched DDR5 involves the prototypes of two new architecture products: the 1-Rank x8, and the 2-Rank x8 standard PC Unbuffered DIMM 288PIN On-die-ECC. Compared with DDR4, DDR5 boasts significantly improved function and performance.

AMD's Next-Generation Van Gogh APU Shows Up with Quad-Channel DDR5 Memory Support

AMD is slowly preparing to launch its next-generation client-oriented accelerated processing unit (APU), which is AMD's way of denoting a CPU+GPU combination. The future design is codenamed after Van Gogh, showing AMD's continuous use of historic names for their products. The APU is believed to be a design similar to the one found in the SoC of the latest PlayStation 5 and Xbox Series X/S consoles. That means that there are Zen 2 cores present along with the latest RDNA 2 graphics, side by side in the same processor. Today, one of AMD's engineers posted a boot log of the quad-core Van Gogh APU engineering sample, showing some very interesting information.

The boot log contains information about the memory type used in the APU. In the logs, we see a part that says "[drm] RAM width 256bits DDR5", which means that the APU has an interface for the DDR5 memory and it is 256-bit wide, which represents a quad-channel memory configuration. Such a wide memory bus is typically used for applications that need lots of bandwidth. Given that Van Gogh uses RDNA 2 graphics, the company needs a sufficient memory bandwidth to keep the GPU from starving for data. While we don't have much more information about it, we can expect to hear greater details soon.

Samsung Demonstrates 256 Gb 3 nm MBCFET Chip at ISSCC 2021

During the IEEE International Solid-State Circuits Conference (ISSCC), Samsung Foundry has presented a new step towards smaller and more efficient nodes. The new chip that was presented is a 256 Gb memory chip, based on SRAM technology. However, all of that doesn't sound interesting, until we mention the technology that is behind it. Samsung has for the first time manufactured a chip using the company's gate-all-around field-effect transistor (GAAFET) technology on the 3 nm semiconductor node. Formally, there are two types of GAAFET technology: the regular GAAFET that uses nanowires as fins of the transistor, and MBCFET (multi-bridge channel FET) that uses thicker fins that come in a form of a nanosheet.

Samsung has demonstrated the first SRAM chip that uses MBCFET technology today. The chip in question is a 256 Gb chip with an area of 56 mm². The achievement Samsung is proud of is that the chip uses 230 mV less power for writes, compared to the standard approach, as the MBCFET transistors allow the company to have many different power-saving techniques. The new 3 nm MBCFET process is expected to get into high-volume production sometime in 2022, however, we are yet to see demos of logic chips besides SRAM like we see today. Nonetheless, even the demonstration of SRAM is big progress, and we are eager to see what the company manages to build with the new technology.

Thermaltake Outs ToughRAM XG RGB DDR4 Memory

Thermaltake today introduced the ToughRAM XG RGB line of DDR4 memory kits. The series debuts in 16 GB (2x 8 GB) dual-channel memory kits, with frequency-based variants of DDR4-3600, DDR4-4000, DDR4-4400, and DDR4-4600. The top DDR4-4600 kit (R016D408GX2-4600C19A) does its rated frequency with timings of 19-26-26-45, and 1.5 V DRAM voltage. The DDR4-4400 kit (R016D408GX2-4400C19A) runs at slightly tighter timings of 19-25-25-45, and 1.45 V. The DDR4-4000 kit (R016D408GX2-4000C19A) ticks at 19-23-23-42, with 1.35 V. At the same voltage, the DDR4-3600 kit (R016D408GX2-3600C18A) does 18-19-19-39.

Visually, the ToughRAM XG RGB module features a chunky aluminium heatspreader design with three distinct design tones, and three silicone addressable-RGB diffusers that hide 16 ARGB diodes. You can control the lighting using Thermaltake's NeonMaker app, or pretty much any ARGB control software, including Razer Chroma. Thermaltake guarantees advertised speeds on Intel X299, Z490, Z390, Z370, Z270, and Z170 chipset motherboards when paired with K-series processors; or AMD X570 and B550 motherboards with Ryzen 3000 "Matisse" or 5000 "Vermeer" processors. The modules are backed by lifetime warranties. The company didn't reveal pricing.

DRAM Revenue for 4Q20 Undergoes Modest 1.1% Increase QoQ in Light of Continued Rising Shipment and Falling Prices, Says TrendForce

Global DRAM revenue reached US$17.65 billion, a 1.1% increase YoY, in 4Q20, according to TrendForce's latest investigations. For the most part, this growth took place because Chinese smartphone brands, including Oppo, Vivo, and Xiaomi, expanded their procurement activities for components in order to seize the market shares made available after Huawei was added to the Entity List by the U.S. Department of Commerce. These procurement activities in turn provided upward momentum for DRAM suppliers' bit shipment. However, clients in the server segment were still in the middle of inventory adjustments during this period, thereby placing downward pressure on DRAM prices. As a result, revenues of most DRAM suppliers, except for Micron, remained somewhat unchanged in 4Q20 compared to 3Q20. Micron underwent a noticeable QoQ decline in 4Q20 (which Micron counts as its fiscal 1Q21), since Micron had fewer work weeks during this period compared to the previous quarter.

Samsung is Preparing Exynos SoC with Radeon GPU for Next-Generation PCs

In 2019, AMD and Samsung have announced that they will be joining forces to develop a new class of mobile SoCs, carrying the Exynos name and having a Radeon GPU inside. These Exynos SoCs could be used for almost everything that needs a low-power processor. While the original plan was to have these processors run inside Samsung's mobile phone offerings, it seems like there is another application for them. If the rumors coming from ZDNet Korea are correct, we are in for a surprise. According to the source, Samsung is preparing to use the Exynos SoC with Radeon graphics in the company's next-generation laptops lineup.

While there is little to no information regarding the specifications of the said system, we can expect it to be a fully Samsung-made laptop. That means that Samsung will provide display, RAM, storage, battery, and other components manufactured by the company or its divisions. This laptop is expected to replace Samsung's Galaxy Book S, which currently uses Qualcomm Snapdragon 8cx SoC. The new PC is going to be Windows 10 based system. For more details, we have to wait for the announcement.

Explosive Growth in Automotive DRAM Demand Projected to Surpass 30% CAGR in Next Three Years, Says TrendForce

Driven by such factors as the continued development of autonomous driving technologies and the build-out of 5G infrastructure, the demand for automotive memories will undergo a rapid growth going forward, according to TrendForce's latest investigations. Take Tesla, which is the automotive industry leader in the application of autonomous vehicle technologies, as an example. Tesla has adopted GDDR5 DRAM products from the Model S and X onward because it has also adopted Nvidia's solutions for CPU and GPU. The GDDR5 series had the highest bandwidth at the time to complement these processors. The DRAM content has therefore reached at least 8 GB for vehicles across all model series under Tesla. The Model 3 is further equipped with 14 GB of DRAM, and the next-generation of Tesla vehicles will have 20 GB. If content per box is used as a reference for comparison, then Tesla far surpasses manufacturers of PCs and smartphones in DRAM consumption. TrendForce forecasts that the average DRAM content of cars will continue to grow in the next three years, with a CAGR of more than 30% for the period.

Apple Patents Multi-Level Hybrid Memory Subsystem

Apple has today patented a new approach to how it uses memory in the System-on-Chip (SoC) subsystem. With the announcement of the M1 processor, Apple has switched away from the traditional Intel-supplied chips and transitioned into a fully custom SoC design called Apple Silicon. The new designs have to integrate every component like the Arm CPU and a custom GPU. Both of these processors need good memory access, and Apple has figured out a solution to the problem of having both the CPU and the GPU accessing the same pool of memory. The so-called UMA (unified memory access) represents a bottleneck because both processors share the bandwidth and the total memory capacity, which would leave one processor starving in some scenarios.

Apple has patented a design that aims to solve this problem by combining high-bandwidth cache DRAM as well as high-capacity main DRAM. "With two types of DRAM forming the memory system, one of which may be optimized for bandwidth and the other of which may be optimized for capacity, the goals of bandwidth increase and capacity increase may both be realized, in some embodiments," says the patent, " to implement energy efficiency improvements, which may provide a highly energy-efficient memory solution that is also high performance and high bandwidth." The patent got filed way back in 2016 and it means that we could start seeing this technology in the future Apple Silicon designs, following the M1 chip.

Update 21:14 UTC: We have been reached out by Mr. Kerry Creeron, an attorney with the firm of Banner & Witcoff, who provided us with additional insights about the patent. Mr. Creeron has provided us with his personal commentary about it, and you can find Mr. Creeron's quote below.

ADATA Gearing up to Launch Next-Gen DDR5 Memory Modules

ADATA Technology, a manufacturer of high-performance DRAM modules, NAND Flash products, mobile accessories, gaming products, electric power trains, and industrial solutions, is gearing up to bring next-generation DDR5 memory modules to market to offers users a significant upgrade in speed, capacity, as well as increased bandwidth per CPU cores. ADATA has been working closely with two leading motherboard makers, MSI and Gigabyte, to ensure an optimized experience through ensuring synergies between ADATA's DDR5 modules and their latest Intel platforms.

In parallel to developing the new memory modules, ADATA has also been working closely with two leading motherboard makers MSI and Gigabyte, its long-term strategic partners, to ensure their new platforms can take full advantage of DDR5. Among other initiatives, ADATA, MSI, and Gigabyte have been conducting joint testing and research to guarantee optimum DDR5 overclocking on the latest Intel platforms to meet gamers' discerning standards. ADATA and the motherboard above makers will be launching DDR5 modules and DDR5-compliant motherboards simultaneously to offer high performance to a wide range of users, including enterprises, gamers, and creators, to name a few.

Linus Torvalds Calls Out Intel for ECC Memory Market Stagnation

Linus Torvalds, the inventor of the Linux kernel and version-control system called git, has posted another one of his famous rants, addressing his views about the lack of ECC memory in consumer devices. Mr. Torvalds has posted his views on the Linux kernel mailing list, where he usually comments about the development of the kernel. The ECC or Error Correcting Code memory is a special kind of DRAM that fixes the problems that occur inside the memory itself, where a bit can get corrupted and change the data stored, thus offering false results. ECC aims to fix those mistakes by implementing a system that fixes these small errors and avoids bigger problems. According to Mr. Torvalds, it is a technology that we need to be implemented everywhere, not just server space like Intel imagines.
Linus Torvalds
Intel has been instrumental in killing the whole ECC industry with it's horribly bad market segmentation... Intel has been detrimental to the whole industry and to users because of their bad and misguided policies wrt ECC. Seriously...The arguments against ECC were always complete and utter garbage... Now even the memory manufacturers are starting do do ECC internally because they finally owned up to the fact that they absolutely have to. And the memory manufacturers claim it's because of economics and lower power. And they are lying bastards - let me once again point to row-hammer about how those problems have existed for several generations already, but these f***** happily sold broken hardware to consumers and claimed it was an "attack", when it always was "we're cutting corners".

QNAP Launches the QGD-3014-16PT Desktop Smart Edge PoE Switch

QNAP Systems, Inc., a leading computing, networking and storage solution innovator, today announced the desktop smart edge PoE Switch - QGD-3014-16PT. With sixteen 30-watt Gigabit PoE ports, two 2.5GbE host management ports, Intel Celeron J4125 quad-core 2.0 GHz processor, and four 3.5-inch SATA drive bays, the QGD-3014-16PT supports QVR Pro, HBS 3 and QuWAN SD-WAN to integrate surveillance deployment, video storage computing, and multi-site remote management to offer SMBs innovative intelligent IP surveillance infrastructure and remote backup solutions.
"Expanding multi-site surveillance networks can be costly and involve large amounts of equipment with low transmission efficiency between multiple remote devices - not to mention the complexities involved in deployment and management. " said Daniel Hsieh, QNAP Product Manager, adding, "the QGD-3014-16PT desktop Smart Edge PoE Switch integrates PoE, surveillance capabilities, and data backup management to simplify these requirements and increase the transmission and backup efficiency of surveillance videos."

DRAM ASP to Recover from Decline in 1Q21, with Potential for Slight Growth, Says TrendForce

The DRAM market exhibits a healthier and more balanced supply/demand relationship compared with the NAND Flash market because of its oligopolistic structure, according to TrendForce's latest investigations. The percentage distribution of DRAM supply bits by application currently shows that PC DRAM accounts for 13%, server DRAM 34%, mobile DRAM 40%, graphics DRAM 5%, and consumer DRAM (or specialty DRAM) 8%. Looking ahead to 1Q21, the DRAM market by then will have gone through an inventory adjustment period of slightly more than two quarters. Memory buyers will also be more willing to stock up because they want to reduce the risk of future price hikes. Therefore, DRAM prices on the whole will be constrained from falling further. The overall ASP of DRAM products is now forecasted to stay generally flat or slightly up for 1Q21.

ASUS Brings Resizable BAR Support to Intel Z490/H470/B460 Platforms

When AMD introduced its Smart Access Memory technology, everyone was wondering will other GPU and CPU providers, namely Intel and NVIDIA, develop a similar solution to complement their offerings. The SAM technology is just AMD's way of naming PCIe resizable Base Address Register (BAR) technology, which has been present in PCI specifications for years as an optional feature. Why it's emerging now you might wonder. Well, the currently used PCIe revision has reached enough bandwidth on the bus to complement the complex data movement that GPU requires and now supports the use of the wider VRAM frame buffer.

It appears that not only AMD has this technology in its portfolio. ASUS has updated its BIOS firmware for its ROG Maximus XII Apex motherboard based on the Intel Z490 chipset, with some pretty interesting features. According to Tom's Hardware, we have information that the next release of BIOS firmware update 1003 for the ROG Maximus XII Apex motherboard will bring support for resizable BAR, making it a first on an Intel platform. For now, the beta 1002 BIOS supports it, however, a stable version will roll out in BIOS 1003. With the motherboard using PCIe 3.0 standard, a lower-bandwidth revision compared to AMD's platform, it will be interesting to see how resizable BAR is performing once the first tests come.

Update 09:45 am UTC: Chris Wefers, ASUS PR Germany, has announced that resizable BAR will be coming to all ASUS motherboards with Intel Z490/H470/B460 chipset, with alleged 13.37% performance increase in Forza Horizon 4, per ASUSes testing. You can see the test configuration in the image below.

Team Group Launches Two ZEUS Series Gaming Memory Modules

TEAMGROUP announced the T-FORCE ZEUS DDR4 U-DIMM Gaming Memory and SO-DIMM DDR4 Gaming Laptop Memory. Both possess a visually-striking design and are constructed with carefully selected, high-quality ICs. Each stick has up to 32 GB of memory and multiple frequency options, allowing you to maintain blazing speeds for your conquering foes.

The T-FORCE ZEUS DDR4 U-DIMM Gaming Memory features T-FORCE's iconic logo and a fierce thunderbolt design, symbolizing the awesome power of Zeus backing up the player. Built with a high-end integrated circuit, this memory module comes with up to 32 GB of RAM and frequency options ranging from DDR4 2666 to DDR4 3200. Say goodbye to complicated BIOS configuration as it supports overclock profiles, allowing you to switch speeds at a press of a button. You can also upgrade easily regardless of whether you use Intel or AMD processors.

Colorful is Preparing DDR4-4000 C14 Memory for Ryzen 5000 Series CPUs

Colorful, a Chinese manufacturer of PC components known for its graphics cards, is apparently preparing a special RAM version for AMD's Ryzen 5000 series CPUs. The new arrival is part of the iGame series that Colorful offers. Thanks to SMZDM forums, we have specifications of the upcoming iGame RAM tuned specifically for Ryzen 5000 series processors. Coming in with all white PCB without a heat spreader, the new Colorful iGame memory features Samsung's B-dies designed for maximum speed and performance. The dies are running at 4000 MT/s with some very strict timings. The memory features C14 (14-14-14-35) timings that are supposed to bring the system latency down and improve performance even further. It is estimated that such a configuration will require 1.5 Volts to power it. While the exact name, launch date, and pricing is unknown, we can only wait and see how Colorful plays it out.

RISC-V Comes to PC: SiFive Introduces HiFive Unmatched Development Board

RISC-V architecture is a relatively new Instruction Set Architecture (ISA) developed at the University of California Berkeley. Starting as a "short, three-month project" the RISC-V ISA is a fifth generation of the Reduced Instruction Set Computing (RISC) ideology. A company working on this technology and helping to grow the ecosystem is SiFive. Today, they announced a big step forward for the ecosystem that will enable developers to make and optimize even more software for this architecture and platform. Called the HiFive Unmatched, the development board represents the first entry of RISC-V ISA to the world of personal computing, with its Mini-ITX form factor and PC-like connectors of power supply and I/O.

The board is home to SiFive's FU740 SoC, a five-core heterogeneous, coherent processor with four SiFive U74 cores, and one SiFive S7 core. This SoC is capable of smooth Linux OS operation, giving the developers a good platform to do their optimizations for. There is 8 GB of onboard DDR4 RAM (unknown frequencies and timing), a MicroSD card slot, and one PCIe 3.0 x4 M.2 slot for system storage. To connect the board to the outside world, you get one Gigabit Ethernet port. For user I/O there are four USB 3.2 Gen 1 Type-A ports (1 Charging port) and one MicroUSB Console port. To power the board, you need a proper power supply with a 24-pin power connector. If you plan to build a PC based on the Unmatched board, you would need a standard ITX case, as it comes in the standard Mini-ITX (170x170 mm) form factor. For more information, please check out SiFive's website.

PNY Announces XLR8 Gaming EPIC-X RGB DDR4 3600MHz Desktop Memory

PNY Announced today the addition of the new XLR8 Gaming EPIC-X RGB DDR4 3600 MHz Desktop Memory to the Company's assortment that will deliver the overclocked performance demanded today combined with the brilliance of RGB lighting and unmatched style. Life today demands speed and performance in everything that we do. Whether for work, content creation, learning, or gaming - and we do game - the demand for speed and performance has never been greater and as such, to count on components that deliver this speed and performance is not a luxury but a must. Consider it delivered.

Winning in extreme game titles demands higher framerates allowing for faster on-screen loading letting gamers perform at their best. Faster memory means less bottlenecking for modern CPUs and GPUs that thrive off high speed RAM. The PNY XLR8 Gaming EPIC-X RGB DDR4 3600 MHz Desktop Memory delivers the required Overclocked Performance and supports XMP 2.0 technology to provide a superior gaming experience.
PNY XLR8 Epic-X DDR4-3600

Dialog Semiconductor Licenses its Non-Volatile ReRAM Technology to GLOBALFOUNDRIES for 22FDX Platform

DIALOG SEMICONDUCTOR, a leading provider of battery and power management, Wi-Fi and Bluetooth low energy (BLE) and Industrial edge computing solutions and GLOBALFOUNDRIES (GF ), the world's leading specialty foundry, today announced that they have entered into an agreement in which Dialog licenses its Conductive Bridging RAM (CBRAM) technology to GLOBALFOUNDRIES. The resistive ram (ReRAM)-based technology was pioneered by Adesto Technologies which was recently acquired by Dialog Semiconductor in 2020. GLOBALFOUNDRIES will first offer Dialog's CBRAM as an embedded, non-volatile memory (NVM) option on its 22FDX platform, with the plan to extend to other platforms.

Dialog's proprietary and production proven CBRAM technology is a low power NVM solution designed to enable a range of applications from IoT and 5G connectivity to artificial intelligence (AI). Low power consumption, high read/write speeds, reduced manufacturing costs and tolerance for harsh environments make CBRAM particularly suitable for consumer, medical, and select industrial and automotive applications. Furthermore, CBRAM technology enables cost-effective embedded NVM for advanced technology nodes required for products in these markets.

Arm Spins-out Cerfe Labs to Advance Development of CeRAM Memory Technology

Today Arm announced the spin-out of Cerfe Labs to develop and license new types of non-volatile memories based on correlated electron materials (CeRAM) and ferroelectric transistors (FeFETs). Arm CeRAM researchers will join Cerfe Labs and assume ownership of the Arm joint development project with Symetrix Corporation.

As part of the spin-out, Arm will transfer its full CeRAM IP portfolio of more than 150 patent families to Cerfe Labs that will be the foundation for a roadmap of related CeRAM technologies. Cerfe Labs initial focus will be on producing meaningful prototypes which will be licensed to partners with a goal of accelerating timing of enabling these novel non-volatile materials for systems.
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