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Alphacool Unveils Apex RAM X4 Water Cooler

RAM cooling at its best! With the Apex RAM X4 water cooler, Alphacool offers powerful and reliable cooling for RAM in two color variants. The Apex RAM X4 with nickel-plated copper cooler base has been specially developed for the latest RAM generation. Like other computer components, these modern, overclockable RAM modules are becoming increasingly powerful and generate enormous waste heat. In combination with the Alphacool Core D-RAM modules, the RAM cooler ensures a lower operating temperature and thus ensures system stability.

Another product in the Apex range now sees the light of day. The stylish design paired with first-class materials and innovative technologies guarantees a unique premium product. This ultimate perfection harmonizes wonderfully with other Apex products and creates an impressive overall look. The brilliant aRGB lighting completes the look of your ensemble.

Manufacturers Anticipate Completion of NVIDIA's HBM3e Verification by 1Q24; HBM4 Expected to Launch in 2026

TrendForce's latest research into the HBM market indicates that NVIDIA plans to diversify its HBM suppliers for more robust and efficient supply chain management. Samsung's HBM3 (24 GB) is anticipated to complete verification with NVIDIA by December this year. The progress of HBM3e, as outlined in the timeline below, shows that Micron provided its 8hi (24 GB) samples to NVIDIA by the end of July, SK hynix in mid-August, and Samsung in early October.

Given the intricacy of the HBM verification process—estimated to take two quarters—TrendForce expects that some manufacturers might learn preliminary HBM3e results by the end of 2023. However, it's generally anticipated that major manufacturers will have definite results by 1Q24. Notably, the outcomes will influence NVIDIA's procurement decisions for 2024, as final evaluations are still underway.

ASUS Breaks Overclocking Records: 9 World Records, 16 Global First Places

ASUS today announced that an international group of elite overclockers has set nine world records and achieved sixteen first-place finishes in a variety of performance benchmarks with ASUS Pro WS WRX90E-SAGE SE and ASUS Pro WS TRX50-SAGE WIFI workstation motherboards. The motherboards leveraged AMD Ryzen Threadripper PRO 7000 WX-Series and AMD Ryzen Threadripper 7000 series processors which featured up to 96 cores and 192 threads. The group of overclockers included Der8auer, Elmor, Massman, OGS, Safedisk, Seby and Shamino.

Ready for CPU and memory overclocking
For AMD Threadripper 7000 series workstations and high-end desktop (HEDT) models, AMD offers CPU and DRAM overclocking options. To fully leverage the performance of the AMD processors, ASUS has incorporated an innovative dual power supply design on Pro WS WRX90E-SAGE SE and Pro WS TRX50-SAGE WIFI motherboards. Along with robust power delivery and advanced cooling modules, these boards exhibit rock-solid stability during overclocking.

Semiconductor Market to Grow 20.2% in 2024 to $633 Billion, According to IDC

International Data Corporation (IDC) has upgraded its Semiconductor Market Outlook by calling a bottom and return to growth that accelerates next year. IDC raised its September 2023 revenue outlook from $518.8 billion to $526.5 billion in a new forecast. Revenue expectations for 2024 were also raised from $625.9 billion to $632.8 billion as IDC believes the U.S. market will remain resilient from a demand standpoint and China will begin recovering by the second half of 2024 (2H24).

IDC sees better semiconductor growth visibility as the long inventory correction subsides in two of the largest market segments: PCs and smartphones. Automotive and Industrials elevated inventory levels are expected to return to normal levels in 2H24 as electrification continues to drive semiconductor content over the next decade. Technology and large flagship product introductions will drive more semiconductor content and value across market segments in 2024 through 2026, including the introduction of AI PCs and AI Smartphones next year and a much-needed improvement in memory ASPs and DRAM bit volume.

Thermaltake Releases TOUGHRAM XG RGB D5 7600/8000 MT/s Memory for Intel 14th Gen

Thermaltake, the leading PC DIY premium brand for Case, Power, Cooling, Gaming Peripherals, and Enthusiast Memory solutions, is excited to launch the TOUGHRAM XG RGB D5 Memory DDR5 7600/8000 MT/s 32 GB (16 GB x2) available in black and white. The TOUGHRAM XG RGB D5 is a high-performance DDR5 RAM module that features a unique X-shaped light bar with 16 LEDs. To satisfy different speed demands, the TOUGHRAM XG RGB D5 series provides frequency options starting from 5600MT/s, and now has new higher frequency additions of up to 8000MT/s and can support the latest Intel 14th Gen.

The TOUGHRAM XG RGB D5 7600/8000 MT/s are made with superior components to achieve uncompromised speed. Built with tightly-screened ICs and a 10-layer PCB with 2oz copper inner layer, The TOUGHRAM XG RGB D5 can deliver outstanding response time performance and overclocking performance. The high-quality 10μ gold fingers on the ram provide high wear resistance to reinforce durability. Additionally, the TOUGHRAM XG RGB D5 Memory DDR5 is equipped with a doubled bank group architecture, increasing capacity without lag. To reach long-term stability, the DDR5 memory features a native Power Management IC (PMIC) to optimize power efficiency with merely 1.1 V low operating voltage. The TOUGHRAM XG RGB D5 7600/8000 MT/s include the on-die error correction code (ECC) can strengthen stability and reliability through its auto error correction.

ASML to Add 600 DUV Machines to China's Semiconductor Manufacturing Capacity by 2025

Thanks to the TMTPost interview with the Global Vice President and China President of ASML, Shen Bo, the Dutch semiconductor equipment manufacturer has revealed that around 1,400 of its deep ultraviolet (DUV) lithography and metrology machines are currently installed in China. The company is expected to achieve a global output of 600 DUV equipment units by the end of 2025. Shen Bo stated that the company aims to install 500-600 units of DUV machinery in China by late 2025 or early 2026. The growth in ASML's Chinese revenues was notably high, with China contributing 46% of the company's system sales in 3Q 2023, representing an 82% revenue increase from the previous quarter.

China plans to build 25 12-inch wafer fabs in the next five years, covering logic wafers, DRAM, and MEMS production. ASML currently has a substantial presence in China, with 16 offices, 12 warehouses, distribution centers, development centers, training centers, and maintenance centers. The company employs over 1,600 people for its China operations. Despite the export restrictions imposed by the US government, ASML anticipates that the new measures will have little impact on its financial outlook for 2023 as it strives to meet the growing demand for semiconductor manufacturing equipment in the global market.

Samsung Electronics Announces Third Quarter 2023 Results

Samsung Electronics today reported financial results for the third quarter ended September 30, 2023. Total consolidated revenue was KRW 67.40 trillion, a 12% increase from the previous quarter, mainly due to new smartphone releases and higher sales of premium display products. Operating profit rose sequentially to KRW 2.43 trillion based on strong sales of flagship models in mobile and strong demand for displays, as losses at the Device Solutions (DS) Division narrowed.

The Memory Business reduced losses sequentially as sales of high valued-added products and average selling prices somewhat increased. Earnings in system semiconductors were impacted by a delay in demand recovery for major applications, but the Foundry Business posted a new quarterly high for new backlog from design wins. The mobile panel business reported a significant increase in earnings on the back of new flagship model releases by major customers, while the large panel business narrowed losses in the quarter. The Device eXperience (DX) Division achieved solid results due to robust sales of premium smartphones and TVs. Revenue at the Networks Business declined in major overseas markets as mobile operators scaled back investments.

Montage Technology Leads in Trial Production of 3rd-Gen DDR5 RCDs

Montage Technology, a leading data processing and interconnect IC company, today announced it has taken the lead in trial production of the 3rd-generation DDR5 Registering Clock Driver (RCD03) designed for use in DDR5 RDIMMs. With its blazingly fast 6400 MT/s data rate, the RCD03 sets a new bar for DDR5 memory performance in upcoming server platforms. It unlocks dramatic capacity, bandwidth, and latency improvements to meet the growing demands of data center, cloud, and AI applications.

The RCD03 marks a major advancement in Montage's continued role as an innovator driving rapid DDR5 developments. This chip achieves a 14.3% speed increase over the 2nd-gen DDR5 RCD and a 33.3% increase over the 1st--gen, making it one of the fastest DDR5 memory interface solutions available today.

Inflation Impacts Demand for Consumer Electronics, 2022 DRAM Module Makers' Revenues Fall 4.6%

TrendForce reports that consumer appetite for electronic products took a hit from high inflation, with global DRAM module sales in 2022 reaching US$17.3 billion—a 4.6% YoY decline. Revenue performance varied significantly among module makers due to the different domains they supply.

TrendForce's data indicated that the top five memory suppliers in 2022 accounted for 90% of total sales, with the top ten collectively capturing 96% of global market revenue. Kingston maintained its dominant market share of 78%. Even with a slight revenue dip, it held steadfast to its position as the global leader. Despite poor end-market demand, Kingston's robust brand scale, along with its comprehensive product supply chain, limited its revenue decline to a modest 5.3%, keeping it firmly at the top of market share rankings.

Samsung V-NAND with 300+ Layers is Coming in 2024, Notes Company Executive

Jung-Bae Lee, President and Head of Memory Business of Samsung Electronics, the world's largest NAND memory supplier, has noted in the blog post that Samsung plans to develop its 9th Generation V-NAND memory with over 300 layers, aiming for mass production in 2024. Samsung's V-NAND uses a double-stack structure and is expected to have more active layers than its competitors' 3D NAND memory, such as SK Hynix's forthcoming 321-layer memory. The increase in layers allows Samsung to enhance storage density and performance in its future 3D NAND devices, focusing on input/output (I/O) speed. While the specific performance details of Samsung's 9th Generation V-NAND remain undisclosed, the memory is expected to be used in next-generation PCIe SSDs with the PCIe 5.0 standard.

Jung-Bae Lee has noted: "New structural and material innovations will be critical in the upcoming era of sub-10-nanometer (nm) DRAM and 1,000-layer vertical V-NAND. As such, we are developing 3D stacked structures and new materials for DRAM while increasing layer count, decreasing height, and minimizing cell interference for V-NAND." The 9th installment of V-NAND, scheduled for 2024, is utilizing 11 nm-class DRAM. Additionally, the blog post reassures the commitment to CXL Memory Modules (CMM), which will enable the composable infrastructure of next-generation systems, especially with high-capacity SSDs powered by V-NAND.

Micron Commemorates 45 Years of Innovation with the Inauguration of its State-of-the-Art Assembly & Test Facility in Malaysia

Micron Technology, Inc., one of the world's largest semiconductor companies, today marked a historic day with the opening of its new cutting-edge assembly and test facility in Batu Kawan, Penang, alongside the celebration of Micron's 45th anniversary. A ceremony officiated by Chief Minister of Penang, Yang Amat Berhormat Tuan Chow Kon Yeow, underscored the regional significance of Micron's expansion, highlighting the company's four and a half decades of innovation and excellence.

Micron previously invested $1 billion and will add up to another billion including construction and full equipping of this new facility over the next few years in Penang to increase factory space to a total of 1.5 million square feet. This expansion enables Micron Malaysia to boost production output and further strengthen its assembly and test capabilities, allowing it to supply leading-edge NAND, PCDRAM and SSD modules to meet the growing demand for transformative technologies such as artificial intelligence and autonomous or electric vehicles.

Samsung Notes: HBM4 Memory is Coming in 2025 with New Assembly and Bonding Technology

According to the editorial blog post published on the Samsung blog by SangJoon Hwang, Executive Vice President and Head of the DRAM Product & Technology Team at Samsung Electronics, we have information that High-Bandwidth Memory 4 (HBM4) is coming in 2025. In the recent timeline of HBM development, we saw the first appearance of HBM memory in 2015 with the AMD Radeon R9 Fury X. The second-generation HBM2 appeared with NVIDIA Tesla P100 in 2016, and the third-generation HBM3 saw the light of the day with NVIDIA Hopper GH100 GPU in 2022. Currently, Samsung has developed 9.8 Gbps HBM3E memory, which will start sampling to customers soon.

However, Samsung is more ambitious with development timelines this time, and the company expects to announce HBM4 in 2025, possibly with commercial products in the same calendar year. Interestingly, the HBM4 memory will have some technology optimized for high thermal properties, such as non-conductive film (NCF) assembly and hybrid copper bonding (HCB). The NCF is a polymer layer that enhances the stability of micro bumps and TSVs in the chip, so memory solder bump dies are protected from shock. Hybrid copper bonding is an advanced semiconductor packaging method that creates direct copper-to-copper connections between semiconductor components, enabling high-density, 3D-like packaging. It offers high I/O density, enhanced bandwidth, and improved power efficiency. It uses a copper layer as a conductor and oxide insulator instead of regular micro bumps to increase the connection density needed for HBM-like structures.

Q4 DRAM Contract Prices Set to Rise, with Estimated Quarterly Increase of 3-8%

TrendForce reports indicate a universal price increase for both DRAM and NAND Flash starting in the fourth quarter. DRAM prices, for instance, are projected to see a quarterly surge of about 3-8%. Whether this upward momentum can be sustained will hinge on the suppliers' steadfastness in maintaining production cuts and the degree of resurgence in actual demand, with the general-purpose server market being a critical determinant.

PC DRAM: DDR5 prices, having already surged in the third quarter, are expected to maintain their upward trajectory, fueled by the stocking of new CPU models. This forthcoming price hike cycle for both DDR4 and DDR5 is incentivizing PC OEMs to proceed with purchases. Although manufacturers still have substantial inventory and there's no imminent shortage, Samsung has been nudged to further slash its production. However, facing negative gross margins on DRAM products, most manufacturers are resistant to further price reductions, instead pushing for aggressive increases. This stance sets the stage for an anticipated rise in DDR4 prices by 0-5% and DDR5 prices by around 3-8% in the fourth quarter. Overall, as DDR5 adoption accelerates, an approximate 3-8% quarterly increase is projected for PC DRAM contract prices during this period.

Micron Delivers High-Speed 7,200 MT/s DDR5 Memory Using 1β Technology

Micron Technology, Inc., today announced it has extended its industry-leading 1β (1-beta) process node technology with the introduction of 16Gb DDR5 memory. With demonstrated in-system functionality at speeds up to 7,200 MT/s, Micron's 1β DDR5 DRAM is now shipping to all data center and PC customers. Micron's 1β-based DDR5 memory with advanced high-k CMOS device technology, 4-phase clocking and clock-sync provides up to a 50% performance uplift and 33% improvement in performance per watt over the previous generation.

As CPU core counts increase to meet the demands of data center workloads, the need for higher memory bandwidth and capacities grows significantly to overcome the 'memory wall' challenge while optimizing the total cost of ownership for customers. Micron's 1β DDR5 DRAM allows computational capabilities to scale with higher performance enabling applications like artificial intelligence (AI) training and inference, generative AI, data analytics, and in-memory databases (IMDB) across data center and client platforms. The new 1β DDR5 DRAM product line offers current module densities in speeds ranging from 4,800 MT/s up to 7,200 MT/s for use in data center and client applications.

Kingston FURY DDR4 UDIMMs Get a New Look

Kingston FURY, the high-performance division of Kingston Technology Company, Inc., a world leader in memory products and technology solutions, announced today the updated new look of Kingston FURY Renegade DDR4 memory.

Kingston FURY Renegade DDR4 delivers amazing speeds up to 5333 MT/s, making it the ultimate choice for power users. The bold two-tone black heat spreaders are on double duty as they not only enhance the look of your build but also manages heat while you're deep at work or play to ensure optimal performance. For those seeking an extra dose of excitement, Kingston FURY Renegade DDR4 RGB boasts a stylish two-tone black heat spreader illuminated by 10 LEDs to create dynamic RGB lighting effects kept in lock-step by Kingston FURY's patented Infrared Sync Technology. Beyond its appearance it doesn't compromise on functionality, offering speeds up to 4600MT/s allowing users to boost frame rates, improve workflow, and edit game play in a flash.

TSMC Announces Breakthrough Set to Redefine the Future of 3D IC

TSMC today announced the new 3Dblox 2.0 open standard and major achievements of its Open Innovation Platform (OIP) 3DFabric Alliance at the TSMC 2023 OIP Ecosystem Forum. The 3Dblox 2.0 features early 3D IC design capability that aims to significantly boost design efficiency, while the 3DFabric Alliance continues to drive memory, substrate, testing, manufacturing, and packaging integration. TSMC continues to push the envelope of 3D IC innovation, making its comprehensive 3D silicon stacking and advanced packaging technologies more accessible to every customer.

"As the industry shifted toward embracing 3D IC and system-level innovation, the need for industry-wide collaboration has become even more essential than it was when we launched OIP 15 years ago," said Dr. L.C. Lu, TSMC fellow and vice president of Design and Technology Platform. "As our sustained collaboration with OIP ecosystem partners continues to flourish, we're enabling customers to harness TSMC's leading process and 3DFabric technologies to reach an entirely new level of performance and power efficiency for the next-generation artificial intelligence (AI), high-performance computing (HPC), and mobile applications."

Corsair Launches the Dominator Titanium DDR5 Memory

CORSAIR, a world leader in enthusiast components for gamers, creators, and PC builders, today launched the much anticipated latest addition to its award-winning memory line-up, DOMINATOR TITANIUM DDR5 memory. Built using some of the fastest DDR5 ICs alongside patented CORSAIR DHX cooling technology for improved overclocking potential, DOMINATOR TITANIUM continues the DOMINATOR legacy with a stunning design and blazing performance.

Sporting an elegant, fresh new aesthetic and built using premium materials and components, DOMINATOR TITANIUM DDR5 memory will be available for both Intel and AMD platforms, supporting Intel XMP 3.0 when paired with 12th and 13th-Gen Core processors or AMD EXPO for Ryzen 7000 CPUs. These technologies enable easy overclocking in just a couple of clicks on compatible platforms.

Micron Breaks Ground on US$2.7 Billion Semiconductor Assembly Plant in India

This past weekend, Micron broke ground on what will be a new semiconductor assembly plant in Gujarat, India. The new facility is said to cover almost 0.4 square kilometres of land or 93 acres, on which phase one will include a 46.5 thousand square metre clean room. The first phase of the project is said to be built by Tata Projects and it's expected to start operating as early as the end of 2024, which seems somewhat optimistic considering how long it can take to build clean rooms of this size in other countries that have much more experience in building such facilities.

Micron is said to be investing a total of US$2.7 billion at the facility, although phase one has a budget of US$825 million as a first step. The full project is said to take five years to complete and is expected to bring some 5,000 direct jobs at the Micron plant. The plant will be a first-of-its-kind in India and Micron will be using it to assemble DRAM and NAND flash. Some of the investment is coming from the Indian government, but the reports don't mention how big of a share the government has contributed.

Crucial Launches DDR5 6000 MHz Pro DIMMs

When Crucial cancelled its Ballistix gaming brand, it was unclear if the company would launch higher-end products in the future, although the company never said it wouldn't. Back in May of this year, Crucial launched its Pro series of memory, which was not exactly pro, at least not for the readership here which is used to an entirely different level of RAM. This was largely due to Crucial sticking to JEDEC spec, even though the company did launch some DDR5 5600 MHz modules.

Now—some six months later—it appears that Crucial is getting ready to deliver some higher performance modules with its new DDR5 6000 MHz modules, although at launch, they will only be available in a kit of two 24 GB modules. Although Crucial claims JEDEC spec, the 48-48-48 timings appear to either be slightly tighter than the original JEDEC spec, or JEDEC has updated the specs since they were announced. Although nothing about these modules screams high-end or pro, there's one thing that makes these stand out against the competition, they operate at 6000 MHz using only 1.1 Volt, whereas most 6000 MHz DIMMs on the market today, operate at 1.35 Volt higher. In addition to that, as these are JEDEC spec DIMMs, there's no need to enable XMP/EXPO settings to make them work at 6000 MHz, which could be a benefit to some. There might be some potential for tweaking these modules as well, something we'll have to wait for reviews to find out about. Crucial is asking for US$166.99 for the 48 GB kit, which puts them at a price disadvantage compared to its competitors, as you can get a similar kit for as little as $115 or possibly even less.

Gigabyte AORUS Laptops Empower Creativity with AI Artistry

GIGABYTE, the world's leading computer hardware brand, featured its AORUS 17X laptop in two influential AI-content-focused Youtubers by Hugh Hou and MDMZ. Both Youtubers took the new AORUS 17X laptop to the AI image and AI video generation test and found the great potential of how the laptops benefit their workflow. The AORUS 17X laptop is powered by NVIDIA GeForce RTX 40 series GPUs to unlock new horizons for creativity and become the go-to choice for art and tech enthusiasts.

Hugh Hou: Unleashing the Power of AI Arts with the AORUS 17X Laptop
Hugh Hou's journey into AI arts, powered by Stable Diffusion XL, garnered viral success. The AORUS 17X laptop emerged as a game-changer with up to 16G of VRAM, enabling local AI photo and video generation without bearing hefty cloud-rendering costs. It empowers creators and outperforms competitors in AI-assisted tasks and enhances AI artistry.

Intel's Meteor Lake CPU Breaks Ground with On-Package LPDDR5X Memory Integration

During a recent demonstration, Intel showcased its cutting-edge packaging technologies, EMIB (embedded multi-die interconnect bridge) and Foveros, unveiling the highly-anticipated Meteor Lake processor with integrated LPDDR5X memory. This move appears to align with Apple's successful integration of LPDDR memory into its M1 and M2 chip packages. At the heart of Intel's presentation was the quad-tile Meteor Lake CPU, leveraging Foveros packaging for its chiplets and boasting 16 GB of Samsung's LPDDR5X-7500 memory. Although the specific CPU configuration remains undisclosed, the 16 GB of integrated memory delivers a remarkable peak bandwidth of 120 GB/s, outperforming traditional memory subsystems using DDR5-5200 or LPDDR5-6400.

Nevertheless, this approach comes with trade-offs, such as the potential for system-wide failure if a memory chip malfunctions, limited upgradeability in soldered-down configurations, and the need for more advanced cooling solutions to manage CPU and memory heat. While Apple pioneered on-package LPDDR memory integration in client CPUs, Intel has a history of using package-on-package DRAM with its Atom-branded CPUs for tablets and ultrathin laptops. While this approach simplifies manufacturing, enabling slimmer notebook designs, it curtails configuration flexibility. We are yet to see if big laptop makers such as Dell, HP, and Asus, take on this design in the coming months.

Samsung Electronics Unveils Industry's Highest-Capacity 12nm-Class 32Gb DDR5 DRAM

collaboration with diverse industries and support various applications
Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed the industry's first and highest-capacity 32-gigabit (Gb) DDR5 DRAM using 12 nanometer (nm)-class process technology. This achievement comes after Samsung began mass production of its 12 nm-class 16Gb DDR5 DRAM in May 2023. It solidifies Samsung's leadership in next-generation DRAM technology and signals the next chapter of high-capacity memory.

"With our 12 nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data," said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics. "We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology."

After a Low Base Year in 2023, DRAM and NAND Flash Bit Demand Expected to Increase by 13% and 16% Respectively in 2024

TrendForce expects that memory suppliers will continue their strategy of scaling back production of both DRAM and NAND Flash in 2024, with the cutback being particularly pronounced in the financially struggling NAND Flash sector. Market demand visibility for consumer electronic is projected to remain uncertain in 1H24. Additionally, capital expenditure for general-purpose servers is expected to be weakened due to competition from AI servers. Considering the low baseline set in 2023 and the current low pricing for some memory products, TrendForce anticipates YoY bit demand growth rates for DRAM and NAND Flash to be 13% and 16%, respectively. Nonetheless, achieving effective inventory reduction and restoring supply-demand balance next year will largely hinge on suppliers' ability to exercise restraint in their production capacities. If managed effectively, this could open up an opportunity for a rebound in average memory prices.

PC: The annual growth rate for average DRAM capacity is projected at approximately 12.4%, driven mainly by Intel's new Meteor Lake CPUs coming into mass production in 2024. This platform's DDR5 and LPDDR5 exclusivity will likely make DDR5 the new mainstream, surpassing DDR4 in the latter half of 2024. The growth rate in PC client SSDs will not be as robust as that of PC DRAM, with just an estimated growth of 8-10%. As consumer behavior increasingly shifts toward cloud-based solutions, the demand for laptops with large storage capacities is decreasing. Even though 1 TB models are becoming more available, 512 GB remains the predominant storage option. Furthermore, memory suppliers are maintaining price stability by significantly reducing production. Should prices hit rock bottom and subsequently rebound, PC OEMs are expected to face elevated SSD costs. This, when combined with Windows increasing its licensing fees for storage capacities at and above 1 TB, is likely to put a damper on further growth in average storage capacities.

Q2 DRAM Industry Revenue Rebounds with a 20.4% Quarterly Increase, Q3 Operating Profit Margin Expected to Turn from Loss to Gains

TrendForce reports that rising demand for AI servers has driven growth in HBM shipments. Combined with the wave of inventory buildup for DDR5 on the client side, the second quarter saw all three major DRAM suppliers experience shipment growth. Q2 revenue for the DRAM industry reached approximately US$11.43 billion, marking a 20.4% QoQ increase and halting a decline that persisted for three consecutive quarters. Among suppliers, SK hynix saw a significant quarterly growth of over 35% in shipments. The company's shipments of DDR5 and HBM, both of which have higher ASP, increased significantly. As a result, SK hynix's ASP grew counter-cyclically by 7-9%, driving its Q2 revenue to increase by nearly 50%. With revenue reaching US$3.44 billion, SK hynix claimed the second spot in the industry, leading growth in the sector.

Samsung, with its DDR5 process still at 1Ynm and limited shipments in the second quarter, experienced a drop in its ASP by around 7-9%. However, benefitting from inventory buildup by module houses and increased demand for AI server setups, Samsung saw a slight increase in shipments. This led to an 8.6% QoQ increase in Q2 revenue, reaching US$4.53 billion, securing them the top position. Micron, ranking third, was a bit late in HBM development. However, DDR5 shipments held a significant proportion, keeping their ASP relatively stable. Boosted by shipments, its revenue was around US$2.95 billion, a quarterly increase of 15.7%. Both companies saw a reduction in their market share.

SK hynix Starts Mass Production of Industry's First 24GB LPDDR5X DRAM

SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has begun supplying the industry's first 24-gigabyte (GB) Low Power Double Data Rate 5X (LPDDR5X) mobile DRAM package to its customers, following the mass production of LPDDR5X in November 2022. SK hynix, in January, developed LPDDR5T, which is an upgraded product of LPDDR5X prior to the development of the 8th generation LPDDR6, and is currently processing customer validation.

"The company integrated the High-K Metal Gate (HKMG) process in the 24 GB LPDDR5X package, enabling the product to deliver outstanding power efficiency and performance," said SK hynix. "The addition of the 24 GB package to our mobile DRAM product portfolio has given us a more flexibility in accommodating customers' needs."
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