News Posts matching "Samsung"

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Samsung 16Gb GDDR6 Memory Powers Latest NVIDIA Quadro Professional Graphics Solution

Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, today announced that its 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) memory is being used in NVIDIA's new Turing architecture-based Quadro RTX GPUs.

Thanks to Samsung's industry-leading 16Gb GDDR6 memory, end users can expect improved performance and energy efficiency in the widest array of graphics-intensive applications, including computer-aided design (CAD), digital content creation (DCC) and scientific visualization applications. Samsung's 16Gb GDDR6 can also be used in rapidly growing fields such as 8K Ultra HD video processing, virtual reality (VR), augmented reality (AR) and artificial intelligence (AI).

Toshiba Looks to Take on Optane With XL-Flash Low-Latency 3D NAND Technology

Toshiba at the Flash Memory Summit announced that it's developing 3D XL-Flash technology - an approach towards the creation of low-latency, 3D NAND that can take on the surging Optane and 3D XPoint memory technologies. Toshiba says the new approach to low-latency NAND could bring latency values down to just 1/10 of current consumer, TLC NAND pricing.

The bet here is on economies of scale - a revised NAND architecture and deployment will still be able to take advantage of the huge fabrication capacity that Toshiba already enjoys (and Samsung, with its Z-NAND, similar in purpose to what Toshiba want to do with XL-Flash), thus avoiding the need for technology and production ramp-up that brought Optane's pricing up. Toshiba will be using its BiCS flash technology, but XL-Flash will be - at least at first - deployed in SLC implementations, so as to improve performance (7 microseconds program time against QLC's 30 microsecond). Of course, this will bring storage density down, but remember the target here is offering Optane-like performance and equal or better density at lower pricing.

Samsung starts Mass Production of QLC Consumer SSDs, 1 TB, 2 TB, 4 TB with over 520 MB/s Read/Write

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 4-bit (QLC, quad-level cell) 4-terabyte (TB) SATA solid-state drive (SSD) for consumers.

Based on 1-terabit (Tb) V-NAND with outstanding performance equivalent to the company's 3-bit design, Samsung's QLC SSD is expected to bring a new level of efficiency to consumer SSDs.

Samsung Begins Mass Producing 2nd-Gen 10nm-Class, 16Gb LPDDR4X Mobile DRAM

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 2nd-generation of 10-nanometer-class (1y-nm), LPDDR4X (Low Power, Double Data Rate, 4X) DRAM to improve the efficiency and lower the battery drain of today's premium smartphones and other mobile applications. Compared to the mobile DRAM memory chips most used in current flagship mobile devices (1x-nm 16Gb LPDDR4X), the 2nd- generation LPDDR4X DRAM features up to a 10 percent power reduction while maintaining the same data rate of 4,266 megabits per second (Mb/s).

"The advent of 10nm-class mobile DRAM will enable significantly enhanced solutions for next-generation, flagship mobile devices that should first hit the market late this year or the first part of 2019." said Sewon Chun, senior vice president of Memory Sales & Marketing at Samsung Electronics. "We will continue to grow our premium DRAM lineup to lead the 'high-performance, high capacity, and low power' memory segment to meet the market demand and strengthen our business competitiveness."

Samsung to Increase NAND Production Capacity in 2019, Upping Investment to $9 billion

Samsung is reportedly looking to increase its investment in the NAND space with a $2.6 billion increase to its annual NAND budget. The increase, which will bring the company's investment up to $9 billion, aims to increase production volume in what is building up to be the actual technology of choice for key players in the storage market.

Remember that for all the investment in increasing density and declining price per GB of competing mechanical solutions, we've just had notice of an HDD fabrication plant that's shutting down. Most of the funding will reportedly go into increasing production volume of 3D NAND memory. Should demand stay relatively stable, the (eventual) additional influx of memory chips to the market should help drive costs even lower - provided there's no funny business in price setting, of course.

Samsung Announces First 8Gb LPDDR5 DRAM using 10 nm Technology

Samsung Electronics, the world leader in advanced memory technology, today announced that it has successfully developed the industry's first 10-nanometer (nm) class* 8-gigabit (Gb) LPDDR5 DRAM. Since bringing the first 8Gb LPDDR4 to mass production in 2014, Samsung has been setting the stage to transition to the LPDDR5 standard for use in upcoming 5G and Artificial Intelligence (AI)-powered mobile applications.

The newly-developed 8Gb LPDDR5 is the latest addition to Samsung's premium DRAM lineup, which includes 10nm-class 16Gb GDDR6 DRAM (in volume production since December 2017) and 16Gb DDR5 DRAM (developed in February).

Samsung Electronics Brings Next Wave of High-Performance Storage with Mass Production of Fifth-Generation V-NAND

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing its fifth-generation V-NAND memory chips with the fastest data transfers now available. In the industry's first use of the 'Toggle DDR 4.0' interface, the speed for transmitting data between storage and memory over Samsung's new 256-gigabit (Gb) V-NAND has reached 1.4-gigabits per second (Gbps), a 40-percent increase from its 64-layer predecessor.

The energy efficiency of Samsung's new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage has been reduced from 1.8 volts to 1.2 volts. The new V-NAND also has the fastest data write speed to date at 500-microseconds (μs), which represents about a 30-percent improvement over the write speed of the previous generation, while the response time to read-signals has been significantly reduced to 50μs.

Samsung Foundry and Arm Expand Collaboration to Drive High-Performance Computing Solutions

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that its strategic foundry collaboration with Arm will be expanded to 7/5-nanometer (nm) FinFET process technology to remain a step ahead in the era of high-performance computing. Based on Samsung Foundry's 7LPP (7nm Low Power Plus) and 5LPE (5nm Low Power Early) process technologies, the Arm Artisan physical IP platform will enable 3GHz+ computing performance for Arm's Cortex -A76 processor.

Samsung's 7LPP process technology will be ready for its initial production in the second half of 2018. The first extreme ultra violet (EUV) lithography process technology, and its key IPs, are in development and expected to be completed by the first half of 2019. Samsung's 5LPE technology will allow greater area scaling and ultra-low power benefits due to the latest innovations in 7LPP process technology.

Samsung Receives the Environmental Product Declaration Certificate for 512Gb V-NAND and 860 EVO 4TB SSD

Samsung Electronics, the world leader in advanced memory technology, today announced that it is being recognized for its environmental reliability by receiving the industry's first Environmental Product Declaration (EPD) certificate in Korea with its 512Gb 64-layer 3bit V-NAND and 860 EVO 4TB SSD.

The Environmental Product Declaration is a national certification system in Korea which recognizes a product's performance according to seven key environmental metrics including carbon footprint, resource footprint, ozone depletion, acidification, eutrophication, photochemical smog, and water footprint.

Samsung Doubles its HBM2 Output, May Still Fall Short of Demand

Samsung has reportedly doubled its manufacturing output of HBM2 (high-bandwidth memory 2) stacks. Despite this, the company may still fall short of the demand for HBM2, according to HPC expert Glenn K Lockwood, Tweeting from the ISC 2018, the annual HPC industry event held between 24th to 28th June in Frankfurt, where Samsung was talking about its 2nd generation "Aquabolt" HBM2 memory, which is up to 8 times faster than GDDR5, with up to 307 GB/s bandwidth from a single stack.

While HBM2 is uncommon on consumer graphics cards (barring AMD's flagship Radeon RX Vega series, and NVIDIA's TITAN V), the memory type is in high demand with HPC accelerators that are mostly GPU-based, such as AMD Radeon Instinct series, and NVIDIA Tesla. The HPC industry itself is riding the gold-rush of AI research based on deep-learning and neural-nets. FPGAs, chips that you can purpose-build for your applications, are the other class of devices soaking up HBM2 inventories. The result of high demand, coupled with high DRAM prices could mean HBM2 could still be too expensive for mainstream client applications.

Realtek Intros RTS5762 NVMe SSD Controller Capable of 3500 MB/s Reads

Realtek, known more for its cheap Ethernet PHYs and audio CODECs, entered the SSD controller market in 2017, with mainstream SSD controllers. This year, the company plans to take on giants such as Silicon Motion, Phison, Intel, and Samsung, with its own high-performance controller, the RTS5762. The PCI-Express 3.0 x4 interface provides 4,000 MB/s of raw bandwidth per direction, and while it's technically impossible for any device to transfer its payload data at that speed (on account of various protocol overheads), very few PCI-Express 3.0 x4 SSDs get within 80th percentile of it (3200 MB/s per direction transfers). It's only recently that 3400 MB/s became the gold-standard of high-end M.2 NVMe SSDs, but Realtek plans to change that.

The RTS5762 is capable of up to 3,500 MB/s reads, or 87.5% saturation of the PCI-Experss 3.0 x4 bus. It supports up to 8 NAND flash channels, 3D TLC and 3D QLC NAND flash memory, and takes advantage of the newer NVMe 1.3 protocol. The only other controller right now that's capable of 3,500 MB/s reads is Samsung "Phoenix," found exclusively on the 970 Pro series (and no other brand's products). Sequential write performance is where this Realtek chip edges past Samsung, with the company showing CDM performance of up to 3,000 MB/s writes, whereas the 970 Pro is only specified to write up to 2,700 MB/s. Realtek also beefed up its mainstream NVMe controller portfolio with the new RTS5763DL. If drives based on this chip are priced right, it could carve out a new market segment between cheaper PCIe 3.0 x2 drives, and "upper mainstream" x4 drives such as the Samsung 970 EVO. Armed with just 4 NAND flash channels and no DRAM to cushion it, the RTS5763DL reads at up to 2150 MB/s, and writes at up to 1475 MB/s (as tested on CDM), making it faster than PCIe 3.0 x2 drives, at least in the sequential reads test.

Samsung, Micron, and Hynix Reportedly Slapped with Colossal Antitrust Fines

China's Anti-Monopoly Bureau of Ministry of Commerce visited Samsung Electronics, SK Hynix, and Micron Technology last year to express its concerns over the high prices of DRAM. Unfortunately, these meetings yielded no results as DRAM prices continued to skyrocket in the first quarter of this year. With their patience exhausted, Chinese antitrust regulators finally launched an investigation into Samsung, Micron, and Hynix, which collectively owns 90% of the global DRAM pie. The three DRAM vendors are allegedly cooperating with the Chinese authorities to shed some light into the whole DRAM price fixing matter. If found guilty, they could face fines between $800 million to $8 billion. The estimated fines were calculated based on the companies' DRAM sales in China between 2016 and 2017.

Whether you believe in coincidence or not, Samsung, Micron, and Hynix have a long history of being partners in crime. The trio, along with Infineon and Elpida Memory, conspired to fix prices on DRAM in the United States from April 1999 and June 2002. Infineon pleaded guilty in 2004 and was fined $160 million. Hynix cracked shortly afterwards and paid $185 million in fines. Elpida got off the hook easy with a $84 million fine, while Samsung took the biggest hit paying up to $300 million. Curiously, Infineon called it quits shortly after the incident, and Micron later acquired Elpida. In other news, China aims to become self-sufficient in the IC department by supporting local manufacturers like Yangtze Memory Technologies (YMTC).

Samsung Introduces 8 TB NVMe SSD For Data Centers

Samsung Electronics, the world leader in advanced memory technology, today announced that it has launched the industry's highest capacity NVMe solid state drive (SSD) based on the incredibly small Next-generation Small Form Factor (NGSFF) - an eight-terabyte (TB) NF1 SSD. The new 8TB NVMe NF1 SSD has been optimized for data-intensive analytics and virtualization applications in next-generation data centers and enterprise server systems.

"By introducing the first NF1 NVMe SSD, Samsung is taking the investment efficiency in data centers to new heights," said Sewon Chun, senior vice president of Memory Marketing at Samsung Electronics. "We will continue to lead the trend toward enabling ultra-high density data centers and enterprise systems by delivering storage solutions with unparalleled performance and density levels."

Samsung & SK Hynix 18 Nanometer DRAM Yields Plagued By Technical Problems

Digitimes reports that Korean memory manufacturers Hynix and Samsung have both been hit by unstable yield rates for their 18 nm server DRAM production.

While the yields are claimed to be sufficient for notebook and desktop PC production, they are not good enough for server memory, which has higher quality requirements. Due to the shortage, Chinese enterprises like Alibaba, Huawei, Lenovo and Tencent are now switching to use 20 nanometer DRAM for their servers, which is in better supply. Other vendors have even requested that no more 18 nm chips are shipped by these Korean suppliers, in a bid to improve quality, which might take several months, but shouldn't have a significant impact on overall DRAM prices.

Samsung Facing Fine of $400 Million Over FinFET Patent Infringement

Bloomberg is reporting that Samsung was hit with a $400 million fine last Friday, (ahem) courtesy of a Texas federal jury. The source of the patent infringement relates to FinFET-specific technology that is being said was "illegally, and willfully taken" from the licensing arm of Korea Advanced Institute of Science and Technology (KAIST), the South Korean university. If you're wondering why was such a case between two South Korean institutions settled in Texas, well - KAIST IP US, the university's licensing arm is strangely (or not) based in the Dallas suburb of Frisco, Texas, - a venue considered "particularly friendly" to patent owners.

The $400 million is just the initial sum; since Samsung's mishandling of the intellectual property (usage without payment) was found to be "willful", the company could be faced with up to three times those charges. Bloomberg's report says that KAIST claimed in its initial complaint that Samsung was dismissive of the FinFet research at first, believing it would be a fad. Apparently, that all changed when rival Intel Corp. started licensing the invention and developing its own products, according to KAIST IP. Samsung, naturally, disagrees: the company that it helped the university develop the technology in the first place, and that it was "disappointed by the verdict", and "will consider options to obtain an outcome that is reasonable, including an appeal."

Samsung Wants to Design Their Own Graphics Processor

Job postings on LinkedIn reveal that Samsung is looking to hire a ton of graphics chip engineers to bring forward their own GPU design. In the past the company has licensed GPU IP from companies like ARM and Imagination Technologies, but these designs come with cost, low performance and low flexibility. With Samsung needing graphics IP for a large range of products like phones, tablets and exploring options in markets like automotive, machine learning and AI, it's not surprising that the company is now looking into rolling their own GPU - from scratch as indicated by a recruiter's posting:
"This is Samsung's proprietary IP. We will define the ISA, the architecture, the SW, the entire solution."

Samsung Launches the Chromebook Plus (V2)

Samsung Electronics America, Inc., announced the Samsung Chromebook Plus (V2), a 2-in-1 convertible designed to help people get the most out of Chrome OS wherever life and work take them. Available at Best Buy starting June 24, the Samsung Chromebook Plus (V2) is equipped with a built-in pen and offers a light, thin and stylish design that delivers versatility, portability and a premium experience at a competitive price point.

"Today's consumers want to be able to maximize their communication while also expressing their creativity wherever they are, and the new Samsung Chromebook Plus fulfills that need, " said Alanna Cotton, Senior Vice President and General Manager at Samsung Electronics America. "For those who choose Chrome OS, we wanted to give them a lot of reasons to choose the new Samsung Chromebook Plus, as it is designed especially for people who never stop moving, to match their pace and magnify their creativity."

Samsung Begins Mass Producing Industry's First 16Gb, 64GB DDR4 RDIMM

Samsung Electronics, announced today that it is the first in the industry to begin volume production of modules containing a 16 gigabit (Gb) monolithic 64 gigabyte (GB) DDR4 memory solution. The new registered dual in-line memory module (RDIMM), which is designed primarily for use in enterprise and cloud server applications, will be shown at the HPE Discover Las Vegas conference and exhibition June 19-21 at the Venetian-Palazzo Resort Center in Booth #170.

"Large data centers are increasingly embracing Big Data, high-speed mobility, IoT, deep learning, AI and cloud-native technologies, with Samsung and other leaders like HPE and AMD delivering integrated solutions that are faster, denser, more scalable, and more power-conserving," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "At Samsung, we are taking the industry to new horizons with our 16Gb, 64GB RDIMMs and other leading-edge memory and storage solutions in helping to fully enable the real-time needs of leading enterprise OEMs (original equipment manufacturers) worldwide," he added.

AMD Introduces FreeSync Technology for New Samsung QLED TVs

AMD and Samsung today announced support for Radeon FreeSync technology in the new Samsung QLED 55" to 82" TV range, bringing the ultimate, ultrawide 4K gaming experience to an entirely new format - big screen TVs. Samsung is the first company to utilize industry-leading Radeon FreeSync adaptive refresh technology for stutter-free gaming inside a consumer television set. With High Dynamic Range (HDR) support up to 1000nits and stunning picture quality, Samsung's QLED displays allow gamers to experience strikingly high refresh rates and low latency on TVs at a variety of price points and screen sizes ranging from 55" to 82" creating a single display for all their home entertainment needs.

Over the past three years, Radeon FreeSync technology has driven widespread adoption and become the industry's most selected solution for smooth gaming. Earlier this year, AMD expanded the ecosystem by propelling tear-free gameplay beyond the PC with the launch of support for FreeSync technology in Microsoft's Xbox One S and Xbox One X consoles in early March. With more than 250 compatible displays offered by more than 20 partners, this is more than double the availability of competing technology.

Samsung Announces 10 nm-Class DDR4 SO-DIMMs for Gaming Notebooks

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has started mass producing the industry's first 32-gigabyte (GB) double data rate 4 (DDR4) memory for gaming laptops in the widely used format of small outline dual in-line memory modules (SoDIMMs). The new SoDIMMs are based on 10-nanometer (nm)-class process technology that will allow users to enjoy enriched PC-grade computer games on the go, with significantly more capacity, higher speeds and lower energy consumption.

Using the new memory solution, PC manufacturers can build faster top-of-the-line gaming-oriented laptops with longer battery life at capacities exceeding conventional mobile workstations, while maintaining existing PC configurations. "Samsung's 32GB DDR4 DRAM modules will deliver gaming experiences on laptops more powerful and immersive than ever before," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "We will continue to provide the most advanced DRAM portfolios with enhanced speed and capacity for all key market segments including premium laptops and desktops."

Samsung to Power Future High-Performance Computing and Connected Devices

Samsung Electronics, a world leader in advanced semiconductor technology solutions, today unveiled a series of new silicon innovations at the heart of future high-performance computing and connected devices. With comprehensive process technology roadmap updates down to 3-nanometer (nm) at the annual 'Samsung Foundry Forum (SFF) 2018 USA', Samsung Foundry is focused on providing customers with the tools necessary to design and manufacture powerful, yet energy-efficient system-on-chips (SoC) for a wide range of applications.

"The trend toward a smarter, connected world has the industry demanding more from silicon providers," said Charlie Bae, executive vice president and head of the Foundry Sales & Marketing Team at Samsung Electronics. "To meet that demand, Samsung Foundry is powering innovation at the silicon level that will ultimately give people access to data, analysis, and insight in new and previously unthought-of ways to make human lives better. It is imperative for us to accomplish the first-time silicon success for our customers' next-generation chip designs."

Samsung Introduces 970 EVO, PRO SSDs at Lower Pricing Than Previously Announced

Samsung continues to outpace all competition in the SSD market - which it has basically cornered, at least in enthusisasts' minds, when it comes to performance and reliability. In a bid to strengthen their grip, Samsung have decided to introduce their 970 EVO and 970 PRO SSDs with lower pricing than previously announced. This reduced pricing across the entire capacity catalog is sure to bring the heat to other, competing solutions in the market, and make Samsung's options - which now count with a 5 year warranty - all the more appealing.

The new pricing will see Samsung's 970 EVO, for example, going for $109.99 in its 250 GB form; $199 for 500 GB; $399 for its 1 TB capacity; and $799 in its ultimate, 2 TB form. These prices place it in an extremely competitive light with Intel's 760p, for example ($116.25, $215.45, $399.99 and $1730.01, respectively) and WD's in-house WD Black ($119.99, $234.24 and $449.99 for the 1 TB version). The 970 PRO, the best-performing SSD, will apparently be available from $249.99 (500 GB) and $499.99 (1 TB). Samsung essentially lowered pricing against its previous generation 960 EVO and 960 PRO, while delivering (virtually) across-the-board improvements.

Samsung Announces PRO Endurance Series Memory Cards

Samsung Electronics Co., Ltd. introduced today the Samsung PRO Endurance microSDHC /microSDXC card, which offers industry-leading endurance and up to 43,8001 hours of continuous video recording. Designed for consumers and B2B channel customers who use intensive video monitoring applications such as surveillance and security cameras, body cameras and dash cams, the PRO Endurance makes continuous video monitoring fast and stable. It delivers read speeds of up to 100 MB/s and provides FHD recording and 4K support via write speeds of up to 30 MB/s.

"Consumers want to feel assured with their video surveillance solutions, and the need for longer-lasting, higher performing memory cards that can withstand extreme conditions and capture critical moments is at an all-time high," said Un-Soo Kim, senior vice president of Brand Product Marketing, Memory Business at Samsung Electronics. "Samsung is proud to again advance what is possible in memory card technology with the introduction of the PRO Endurance, which offers security-minded consumers the industry's highest levels of endurance and optimized read/write speeds for immediate access to critical surveillance content."

Samsung, Micron, and Hynix Accused of DRAM Price Fixing

Law firm Hagens Berman has filed a class action lawsuit against Samsung, Micron, and Hynix in the US District Court for the Northern District of California. According to the firm's investigation, the three DRAM manufacturers conspired to limit the supply of DRAM chips between 2016 and 2017 with the purpose of inflating their prices. The firm affirmed that DRAM saw a 47 percent increase in price during 2017, which made it the largest jump ever in the last 30 years. As noted by the filing, Samsung, Micron and Hynix collectively own 96 percent of the worldwide DRAM market as of 2017. The "conduct changed abruptly" when the Chinese government launched an investigation to look into the matter. This class action is opened to consumers in the U.S. who've purchased a device that uses DRAM between July 1, 2016 and February 1, 2018.

"What we've uncovered in the DRAM market is a classic antitrust, price-fixing scheme in which a small number of kingpin corporations hold the lion's share of the market," stated Hagens Berman managing partner Steve Berman. "Instead of playing by the rules, Samsung, Micron and Hynix chose to put consumers in a chokehold, wringing the market for more profit."

Samsung Begins Mass Production of 10 nm-class 16 Gb LPDDR4X DRAM for Automobiles

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing 10-nanometer (nm)-class 16-gigabit (Gb) LPDDR4X DRAM for automobiles. The latest LPDDR4X features high performance and energy efficiency while significantly raising the thermal endurance level for automotive applications that often need to operate in extreme environments. The 10nm-class DRAM will also enable the industry's fastest automotive DRAM-based LPDDR4X interface with the highest density.

"The 16Gb LPDDR4X DRAM is our most advanced automotive solution yet, offering global automakers outstanding reliability, endurance, speed, capacity and energy efficiency, ," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "Samsung will continue to closely collaborate with manufacturers developing diverse automotive systems, in delivering premium memory solutions anywhere."
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