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Micron Announces Acquisition of Remaining Interest in IM Flash Technologies Joint Venture, Intel Out of Partnership

The Intel-Micron partnership pertaining to memory technologies is drawing to a close, with Micron today announcing they'd be acquiring remaining interest in IM Flash Technologies. IM Flash Technologies is the literal embodiment of the Intel-Micron partnership, and Micron acquiring the entire stake of it means that Intel is left out of any investment/development of 3D XPoint memory.

Micron expects to pay approximately $1.5 billion in cash for the transaction, dissolving Intel's non-controlling interest in IM Flash, and the two companies will independently drive their own future technology roadmaps. Based on prior agreements, Micron will sell 3D XPoint memory wafers to Intel for up to a year after close.

Cadence, Micron Update on DDR5: Still On Track, 1.36x Performance Increase Over DDR4 at Same Data Rate

DDR5 will be the next step in DDR5 memory tech, again bringing increased transfer speeds over the previous JEDEC (the standards body responsible for the DDR specifications) specification. The new memory technology will also bring the customary reductions in operating voltage - the new version will push the 64-bit link down to 1.1V and burst lengths to 16 bits from 1.2V and 8 bits. In addition, DDR5 lets voltage regulators ride on the memory card rather than the motherboard. CPU vendors are also expected to expand the number of DDR channels on their processors from 12 to 16, which could drive main memory sizes to 128 GB from 64 GB today.

DDR5 is being developed with particular attention to the professional environment, where ever-increasingly gargantuan amounts of addressable memory are required. One of the guiding principles over DDR5's development is a density increase (to allow 16 Gbit chips) that would allow for larger volumes of memory (and thus data processing) in the environments that need that. Reduced power consumption also plays a role here, but all of this will have a cost: latency. For end-users, though, this increased latency will be offset by the usual suspects (DDR memory companies such as Crucial, Corsair, just to name some started with the letter C) in tighter timings and increased operating frequencies. JEDEC's specification for DDR5 is set at 4800 MT/s, but it's expected the memory tech will scale to 6400 MT/s, and you know overclocking and performance-focused companies will walk all over the standard.

Crucial Announces the P1 M.2 NVMe SSD with QLC NAND Flash

Crucial, a leading consumer brand of Micron Technology for memory and storage upgrades, today announced the availability of the Crucial P1 SSD, a PC storage device that leverages the NVMe PCIe interface and Micron's leading-edge QLC technology to deliver fast capacity for less. This is an expansion of Crucial's award-winning portfolio of dependable, high-performing, and affordable SSDs.

The Crucial P1 SSD delivers category-leading, real-world performance. PCMark 8 benchmarks show that the drive is capable of mixed-mode throughputs of up to 565 MB/s, with a composite score of 5,084, which outperforms similar SSDs within the price category. With sequential read/write speeds up to 2,000/1,700 MB/s, the P1 provides unwavering performance via hybrid-dynamic write acceleration, a unique SLC cache implementation. The drive offers an MTTF of 1.8 million hours and an endurance of up to 200 TB total bytes written, with power usage at an active average of 100mW.

Mushkin Intros Source M.2-SATA SSDs

Mushkin introduced M.2-SATA variants of its cost-effective Source SSDs. Built in the M.2-2280 form-factor, the drives feature SATA 6 Gb/s interface. The drives combine a Silicon Motion SM2258XT DRAM-less controller with Micron 3D TLC NAND flash, and comes in capacities of 120 GB, 240 GB, 480 GB, and 960 GB. On tap are sequential read speeds of up to 560 MB/s, with up to 520 MB/s sequential writes; up to 78,000 IOPS 4K random reads, and up to 81,000 IOPS 4K random writes. Among its unique features are LPDC ECC, Data Shaping, Global Wear-leveling, Static Data-refresh, and MEDS (Muskin Enhanced Data-protection Suite), an imaging and data-backup software. The drives are backed by 3-year warranties, and could be priced mostly under the $100-mark, except for the 960 GB variant.

Samsung To Reduce DRAM Output Growth in Favor of Maintaining Prices, Says Bloomberg

In a bid to head off investor worries of a potential downturn, Samsung is looking to tighten their belts in regards to the manufacturing of DRAM. In particular, this move is preempted by the expectation of DRAM bit growth to be less than 20% year-over-year, with bit growth being the key measurement for gauging market demand based on the amount of memory produced. Considering the semiconductor industry is known for its up and down cycles, Samsung's preemptive move could stabilize or even drive up the cost of memory coming out of not just them but Micron and SK Hynix as well. This would help keep their profits rolling in, just in case a downturn in demand does take place, but it also means PC enthusiasts will have to deal with memory prices remaining roughly the same or possibly climb higher going forward.

Anthea Lai, an analyst for Bloomberg Intelligence, in Hong Kong made note that "If Samsung does cut its DRAM bit growth, it shows the company is happy with the current oligopoly market structure." Elaborating further, he said that "It prefers keeping supply tight and prices high, rather than taking market share and risking lower prices, therefore chances for DRAM prices to stay strong is higher."

Micron Announces Its Initial Launch Partner Status for NVIDIA RTX 20-Series GDDR6 Implementation

Memory subsystems are an important part of graphics workloads, and both AMD and NVIDIA have always been looking to cross the cutting-edge of tech in both GPU production and memory fabrication technologies. AMD has been hitching itself to the HBM bandwagon with much more fervor than NVIDIA, albeit with somewhat lukewarm results - at least from a consumer, gaming GPU perspective. NVIDIA has been more cautious: lock HBM's higher costs and lower availability to higher-margin products that can leverage the additional bandwidth, and leave GDDR to muscle its way through consumer products - a strategy that has likely helped in keeping BOM costs for its graphics cards relatively low.

As it stands, Micron was the only company with both the roadmap and production volume to be NVIDIA's partner in launching the RTX 20-series, with products above (and including) the GTX 2070 all carrying the new high-performance memory subsystem. Micron has already announced GDDR6 memory as a product back in 2017, with sampling by the beginning of 2018 and mass volume production by June - just enough time to spool up a nice inventory for new, shiny graphics cards to come out in September. Of course, this ramp-up and initial Micron leadership doesn't mean they will be the only suppliers for NVIDIA - however, it's safe to say they'll be the most relevant one for at least a good while.

Intel-Micron QLC NAND Yields Less Than 50%, a Prelude to Global SSD Price Hikes?

IMFlash Technologies (IMFT), the Intel-Micron joint venture that manufactures NAND flash and 3D Xpoint memory for use in Intel and Micron end-user products, and Micron Technology-branded NAND flash supply to other SSD manufacturers, is facing a big hurdle with its QLC NAND flash manufacturing ramp-up, which if not checked, could influence SSD prices globally. The company is apparently seeing dangerously low yields of less than 50 percent for its 3D QLC NAND flash memory. This effectively makes its QLC NAND pricier (in terms of $/GB) than current-generation 3D TLC NAND.

The first victim of low yields of 3D QLC NAND flash is Intel's SSD 660p series, a mainstream NVMe SSD that brought 1 TB of storage under the $200-mark. Sources within IMFT tell Tweaktown that the company is seeing 48% yields in its 64-layer QLC NAND flash wafers (i.e. 52% of the wafer is unfit for further production). In contrast, 64-layer 3D TLC yields are above 90% (margin/incomplete dies are excluded from these figures). What's worse, the source predicts that the conditions may never get better with this generation.

Crucial DDR4-2933 Registered DIMMs Now Available

Crucial , a leading global brand of memory and storage upgrades, today announced the immediate availability of DDR4 2933 MT/s Registered DIMM server modules, a new offering in its server memory product portfolio. Designed to keep servers running at full speed and peak efficiency in support of Intel's next-generation Xeon processor product families, the new RDIMM modules enable IT users to get the most out of their server infrastructure deployments.

"Our new DDR4 2933 MT/s RDIMMs are designed to deliver the speed required to maximise the memory throughput in the next generation of servers," says Teresa Kelley, VP & GM, Micron Consumer Products Group. "Today's data centres are running memory intensive applications that require a higher degree of overall system performance, and our new RDIMM modules were designed to meet this next level of system performance."

ADATA SU800 Series SATA SSDs Gets a 2TB Variant

ADATA Ultimate SU800 launched mid-2016 to compete with performance-segment SATA SSDs of the time, such as the 850 EVO. It was one of the first drives in its segment to implement 3D TLC NAND flash, and came in capacities ranging between 128 GB to 1 TB. Two years later, ADATA augmented this series with a new 2 TB variant to go after the crowd that wants to take advantage of low NAND flash prices to grab a high capacity SATA SSD to use as a game library drive.

The new 2 TB variant (ASU800SS-2TT-C), continues to be based on the Silicon Motion SM2258G controller, cushioned by a DRAM cache, and uses Micron-made 3D TLC NAND flash. It uses up to 8 percent of its TLC NAND flash as SLC cache. The drive offers sequential transfer rates of up to 560 MB/s, with up to 520 MB/s sequential writes, and endurance of up to 1,600 TBW. LDPC (low density parity check code) and in-built DVESLP mode support make up its feature-set. Backed by a 3-year warranty, the drive is expected to be priced around $379.

Intel Intros 660p Series M.2 NVMe SSDs with QLC NAND Flash

Intel Tuesday introduced the new SSD 660p series M.2 NVMe solid state drives. At the heart of these drives is the new 64-layer 3D QLC (quadruple level cell, or 4 bits per cell) NAND flash memory by IMFlash Technology (an Intel and Micron joint-venture). This memory is mated with a SIlicon Motion SMI 2263 controller. This chip is a derivative of the popular SMI2262EN, built on a newer process, with support for QLC NAND flash, compacted to have a smaller PCB footprint, and is driven by a custom firmware by Intel. The drives use over 10% of the QLC NAND flash area as SLC cache. The 660p series comes in three variants based on size - 512 GB, 1 TB, and 2 TB. The prices are the biggest dividend of QLC: the 512 GB variant goes for USD $99.99, the 1 TB variant at $199.99, and the 2 TB variant for $399.99.

Built in the M.2-2280 form-factor, the SSD 660p series drives feature PCI-Express 3.0 x4 interface. Intel's pricing puts these drives close to competing drives with PCIe x2 interface, but offering higher transfer rates thanks to the wider bus. It's also interesting to note here that the controller is cushioned by a DRAM cache (something PCIe x2 drives tend to lack, to keep costs down). Performance numbers differ by variant, and the 512 GB drive is the slowest, sequentially reading at speeds of up to 1500 MB/s, with up to 1000 MB/s sequential writes; up to 90,000 4K random reads, and up to 220,000 IOPS 4K random writes. The 1 TB and 2 TB variants both sequentially read and write at up to 1800 MB/s. The 1 TB variant offers 150,000 IOPS 4K random reads, and up to 220,000 IOPS random writes; while the 2 TB variant has 4K random reads/writes numbers of 220,000 IOPS.

QLC NAND Flash Based Intel SSD 660p Could Lower Prices of PCIe x4 NVMe SSDs

Intel debuted its 3D QLC NAND flash memory on new SSD DC series 2.5-inch U.2 PCIe drives. Its technology partner Micron, too gave its 3D QLC an enterprise debut with the 5120 ION. The first client-segment debut from the IMFlash combine could be the Intel SSD 660p series of M.2 NVMe SSDs. Slotted between the 700p and the 600p, the new 660p implements homebrew 64-layer QLC NAND flash memory, and a new controller. It comes in sizes of 512 GB, 1 TB, and 2 TB.

The best part about the 660p is its performance numbers. The drive takes advantage of PCI-Express 3.0 x4, and offers (at least on paper), performance numbers identical to those of the pricier 700p. The drives read at speeds of up to 1800 MB/s, with up to 1100 MB/s writes. The 600p, in comparison, capped out at 560 MB/s sequential writes, while the 700p is only slightly higher, at 1200 MB/s. Random access speeds are up to 150,000 IOPS (both reads and writes). QLC pays off rich dividends to consumers by way of price/GB. The 660p 512 GB is expected to be priced at 113.90€ (0.22€/GB), the 1 TB variant at 197.75€ (0.20€/GB), and the 2 TB variant at 391.43€ (0.20€/GB). Not bad for launch prices, considering these are PCIe NVMe drives priced competitively with SATA SSDs.

Intel Starts Producing 3D QLC NAND Flash Based PCIe SSDs for Data-Centers

Intel announced that it started mass-production of PCI-Express SSDs for data-centers that implement the latest-generation 3D QLC NAND flash memory. The new QLC (4 bits per cell) NAND flash memory enables 33% increases in densities over TLC NAND flash, and with 3D (stacks), the density per chip is further multiplied. Built in the 15 mm-thick 2.5-inch form-factor with U.2 interface, the drive is built for the rigors of "warm storage" (data that isn't hot, but isn't cold/archival, either). Such drives can be slower than "hot data" drives based on faster MLC or even SLC NAND flash, but almost always up; and faster than HDDs. The first 3D QLC NAND-based SSD, which probably uses the same chips as this drive, is the Micron 5210 ION, which was launched in May.

Micron and Intel go Separate Ways for 3D XPoint Program After 2019

Micron and Intel today announced an update to their 3D XPoint joint development partnership, which has resulted in the development of an entirely new class of non-volatile memory with dramatically lower latency and exponentially greater endurance than NAND memory.

The companies have agreed to complete joint development for the second generation of 3D XPoint technology, which is expected to occur in the first half of 2019. Technology development beyond the second generation of 3D XPoint technology will be pursued independently by the two companies in order to optimize the technology for their respective product and business needs.

The two companies will continue to manufacture memory based on 3D XPoint technology at the Intel-Micron Flash Technologies (IMFT) facility in Lehi, Utah.

Micron Provides Statement on Fujian Province Patent Litigation

(Editor's Note: We'll see if this statement from Micron is enough to staunch the bleeding on its shares - which it should, since the company says no recognizable impact will exist on its bottom line. If things are as they seem (and yet, they seldom are), this is a checkmate move from Chinese manufacturing companies - eventually supported by the Chinese government - and an interesting way to lock China's voracious DRAM and NAND market to fully domestic manufacturers.)

Micron Technology, Inc., announced that the Fuzhou Intermediate People's Court, Fujian Province, China today notified two Chinese subsidiaries of Micron that it has granted a preliminary injunction against those entities in patent infringement cases filed by United Microelectronics Corporation (UMC) and Fujian Jinhua Integrated Circuit Co. (Jinhua). The patent infringement claims of UMC and Jinhua were filed against Micron in retaliation for criminal indictments filed by Taiwan authorities against UMC and three of its employees and a civil lawsuit filed by Micron against UMC and Jinhua in the United States District Court for the Northern District of California for the misappropriation of Micron trade secrets.

Chinese DRAM Companies Stealing DRAM IP From Samsung and SK Hynix

It's not just Micron, but also Korean DRAM giants Samsung and SK Hynix, that are the latest victims of large-scale industrial espionage by Chinese DRAM makers to steal vital DRAM intellectual property (IP), according to Korea Times. Today's DRAM makers build their products on IP acquired over decades, and that is time Chinese companies do not have, and aren't willing to license from established DRAM makers, either.

"Samsung Electronics and SK Hynix have become the target of industrial espionage by Chinese memory chip manufacturers. In semiconductors, patents are critical to the cost structure. The companies have to protect what they have spent decades building. The result is Chinese companies are attempting to infringe on Samsung and SK patents," said a Korean official involved in the investigation of IP theft.

Micron Technology Faces Ban in China After Losing IP Spat to UMC

Stocks of Micron Technology tanked on Tuesday as reports emerged of the company being banned in China, the world's largest semiconductor market. A Chinese court ruled in favor of Taiwanese semiconductor foundry UMC in its patent infringement lawsuit against Micron. The Fuzhou Intermediate People's Court issued a preliminary injunction stopping the sale of 26 Micron products, spanning across both its DRAM and NAND flash product lines, UMC said in a statement.

Micron, meanwhile, maintains that it hasn't read the injunction order yet, and that it won't comment until it does. Micron's position is doing precious little in stopping its hemorrhage at the markets, as its stock prices fell 8 percent at the time of this writing. The Micron-UMC spat is fascinating in a broader geopolitical context. Micron accuses UMC of serving as a conduit for funneling away its IP to midwife Chinese DRAM companies such as Fujian Jinhua Integrated Circuit Co. It is the counter-suit to this by UMC, which was won today. China accounted to more than 50 percent of Micron's revenues in FY 2017, with most of the chips being mopped up by the consumer electronics and PC manufacturing industries.

NVIDIA GV102 Prototype Board With GDDR6 Spotted, Up to 525 W Power Delivery. GTX 1180 Ti?

Reddit user 'dustinbrooks' has posted a photo of a prototype graphics card design that is clearly made by NVIDIA and "tested by a buddy of his that works for a company that tests NVIDIA boards". Dustin asked the community what he was looking at, which of course got tech enthusiasts interested.

The card is clearly made by NVIDIA as indicated by the markings near the PCI-Express x16 slot connector. What's also visible is three PCI-Express 8-pin power inputs and a huge VRM setup with four fans. Unfortunately the GPU in the center of the board is missing, but it should be GV102, the successor to GP102, since GDDR6 support is needed. The twelve GDDR6 memory chips located around the GPU's solder balls are marked as D9WCW, which decodes to MT61K256M32JE-14:A. These chips are Micron-made 8 Gbit GDDR6, specified for 14 Gb/s data rate, operating at 1.35 V. With twelve chips, this board has a 384-bit memory bus and 12 GB VRAM. The memory bandwidth at 14 Gbps data rate is a staggering 672 GB/s, which conclusively beats the 484 GB/s that Vega 64 and GTX 1080 Ti offer.

Micron Begins Volume Production of GDDR6 High Performance Memory

Micron Technology, Inc. today announced volume production on its 8 GB GDDR6 memory. Built on experience and execution for several generations of GDDR memory, GDDR6 - Micron's fastest and most powerful graphics memory designed in Micron's Munich Development Center - is optimized for a variety of applications that require high performance memory, including artificial intelligence (AI), networking, automotive and graphics processing units (GPUs). Additionally, Micron has worked with core ecosystem partners to ramp GDDR6 documentation and interoperability, enabling faster time to market for designs.

"Micron is a pioneer in developing advanced high bandwidth memory solutions and continues that leadership with GDDR6. Micron demonstrated this leadership by recently achieving throughput up to 20 GB/s on our GDDR6 solutions," said Andreas Schlapka, director, Compute Networking Business Unit, Micron. "In addition to performance increases, Micron has developed a deep partner ecosystem to enable rapid creation of GDDR6 designs, enabling faster time to market for customers looking to leverage this powerful new memory technology."

Samsung, Micron, and Hynix Reportedly Slapped with Colossal Antitrust Fines

China's Anti-Monopoly Bureau of Ministry of Commerce visited Samsung Electronics, SK Hynix, and Micron Technology last year to express its concerns over the high prices of DRAM. Unfortunately, these meetings yielded no results as DRAM prices continued to skyrocket in the first quarter of this year. With their patience exhausted, Chinese antitrust regulators finally launched an investigation into Samsung, Micron, and Hynix, which collectively owns 90% of the global DRAM pie. The three DRAM vendors are allegedly cooperating with the Chinese authorities to shed some light into the whole DRAM price fixing matter. If found guilty, they could face fines between $800 million to $8 billion. The estimated fines were calculated based on the companies' DRAM sales in China between 2016 and 2017.

Whether you believe in coincidence or not, Samsung, Micron, and Hynix have a long history of being partners in crime. The trio, along with Infineon and Elpida Memory, conspired to fix prices on DRAM in the United States from April 1999 and June 2002. Infineon pleaded guilty in 2004 and was fined $160 million. Hynix cracked shortly afterwards and paid $185 million in fines. Elpida got off the hook easy with a $84 million fine, while Samsung took the biggest hit paying up to $300 million. Curiously, Infineon called it quits shortly after the incident, and Micron later acquired Elpida. In other news, China aims to become self-sufficient in the IC department by supporting local manufacturers like Yangtze Memory Technologies (YMTC).

Micron Ready With 96-Layer Flash & 1Y nm DRAM in 2H 2018

In their recent earnings call, Micron commented that they have 96-layer 3D NAND technology on track for volume shipments in the second half of 2018. Most of today's SSDs typically use 32-layer technology, with 64-layer flash chips used in some recent releases like the Crucial MX500. 96-layer is the third generation of 3D NAND and increases storage capacity per chip even further which allows smaller and more energy efficient mobile devices to be built. Of course it will be cheaper too, compared to current-generation 64 layer NAND, which should bring SSD pricing down even more, and of course generally help pricing of consumer products which use flash memory.

The second important note from the presentation is that Micron expects 1X nm (18 nm) DRAM production to exceed that of previous generations before the end of this year. Their next-generation 1Y nm (15/16 nm) DRAM is on track to begin production shipments in the second half of 2018, too. As they noted in a previous event, their product and process roadmap for DRAM 1z looks solid and 1-alpha development programs already under way.

Micron Ships Industry's First Quad-Level Cell NAND SSD

Micron Technology, Inc. has commenced shipments of the industry's first SSD built on revolutionary quad-level cell (QLC) NAND technology. Unveiled at Micron's 2018 Analyst and Investor Event, the Micron 5210 ION SSD provides 33 percent more bit density than triple-level cell (TLC) NAND, addressing segments previously serviced with hard disk drives (HDDs). The introduction of new QLC-based SSDs positions Micron as a leader in providing higher capacity at lower costs to address the read-intensive yet performance-sensitive cloud storage needs of AI, big data, business intelligence, content delivery and database systems.

As workloads evolve to meet the ever-increasing demands for real-time data insights and analytics, data centers increasingly need the capacity, speed, reliability and steady state performance that enterprise flash storage provides. Micron QLC NAND - reaching densities of 1 terabit with its next-generation 64-layer 3D NAND structure - is optimized to meet these demands and make SATA SSD performance and capacity more approachable than ever before.

Micron and Intel Extend Their Leadership in 3D NAND Flash Memory

Micron Technology Inc. and Intel Corporation today announced production and shipment of the industry's first 4bits/cell 3D NAND technology. Leveraging a proven 64-layer structure, the new 4bits/cell NAND technology achieves 1 terabit (Tb) density per die, the world's highest-density flash memory. The companies also announced development progress on the third-generation 96-tier 3D NAND structure, providing a 50 percent increase in layers. These advancements in the cell structure continue the companies' leadership in producing the world's highest Gb/mm2 areal density.

Both NAND technology advancements-the 64-layer QLC and 96-layer TLC technologies -utilize CMOS under the array (CuA) technology to reduce die sizes and deliver improved performance when compared to competitive approaches. By leveraging four planes vs the competitors' two planes, the new Intel and Micron NAND flash memory can write and read more cells in parallel, which delivers faster throughput and higher bandwidth at the system level. The new 64-layer 4bits/cell NAND technology enables denser storage in a smaller space, bringing significant cost savings for read-intensive cloud workloads. It is also well-suited for consumer and client computing applications, providing cost-optimized storage solutions.

Cadence and Micron Demo DDR5-4400 Memory Module

Cadence and Micron have joined forces to build the world's first working DDR5-4400 memory module. Cadence provided their DDR5 memory controller and PHY for the prototype while Micron produced the 8 Gb chips, which were manufactured under TSMC's 7 nm process. They were able to achieve 4400 megatransfers per second, which is roughly 37.5% faster than the fastest DDR4 memory that is currently on the market. Nevertheless, Marc Greenberg from Cadence emphasized that DDR5 aims to provide increased capacity solutions, more than actual performance.

The DDR5 standard should facilitate the production of 16 Gb dies and make vertical stacking easier. Restricted by laws of physics, dies eventually get slower as they increased in size. Once you start putting 16Gb die in 1X memory technology, the distances between them starts to get longer. As a result, core timing parameters become worse. Cadence's prototype had a CAS latency of 42 (No, not a typo). Although, the test module does run at 1.1 volts, which makes it quite impressive when compared to DDR4.

Samsung, Micron, and Hynix Accused of DRAM Price Fixing

Law firm Hagens Berman has filed a class action lawsuit against Samsung, Micron, and Hynix in the US District Court for the Northern District of California. According to the firm's investigation, the three DRAM manufacturers conspired to limit the supply of DRAM chips between 2016 and 2017 with the purpose of inflating their prices. The firm affirmed that DRAM saw a 47 percent increase in price during 2017, which made it the largest jump ever in the last 30 years. As noted by the filing, Samsung, Micron and Hynix collectively own 96 percent of the worldwide DRAM market as of 2017. The "conduct changed abruptly" when the Chinese government launched an investigation to look into the matter. This class action is opened to consumers in the U.S. who've purchased a device that uses DRAM between July 1, 2016 and February 1, 2018.

"What we've uncovered in the DRAM market is a classic antitrust, price-fixing scheme in which a small number of kingpin corporations hold the lion's share of the market," stated Hagens Berman managing partner Steve Berman. "Instead of playing by the rules, Samsung, Micron and Hynix chose to put consumers in a chokehold, wringing the market for more profit."

Micron Announces New Edge Storage MicroSDXC Cards

Micron today announced general availability of the 128GB and 256GB density of edge storage microSD card solutions and collaboration with several leading video surveillance solution providers to promote surveillance-grade edge storage. Built on Micron's industry-leading 64-layer 3D TLC NAND technology, the newly released solutions enable greater capacity in a smaller space, delivering up to 30 days of surveillance video storage in the camera itself.

Over 98 percent of all microSD cards sold globally in 2017 were used in consumer applications, according to IHS Markit. These consumer-grade memory cards are not designed and validated for commercial use in video surveillance applications. Micron's industrial microSD cards are designed specifically for professional video surveillance use cases and include a three-year warranty for 24x7 continuous video recording usage. The Micron microSD card design and firmware is optimized to ensure a reliable, robust and low-maintenance system design that delivers 24x7 continuous recording capability with minimum video frame drops.
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